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Infineon Technologies |
MOSFET N-CH 650V 6.6A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 700 mOhm @ 4.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock5,616 |
|
MOSFET (Metal Oxide) | 650V | 6.6A (Tc) | 10V | 5V @ 300µA | 47nC @ 10V | 790pF @ 25V | ±20V | - | 83W (Tc) | 700 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 10A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2820pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,488 |
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MOSFET (Metal Oxide) | 40V | 10A (Ta) | 4.5V, 10V | 3V @ 250µA | 32nC @ 4.5V | 2820pF @ 20V | ±20V | - | 2.5W (Ta) | 13 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 200V 9.4A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 86W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,832 |
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MOSFET (Metal Oxide) | 200V | 9.4A (Tc) | 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | ±30V | - | 86W (Tc) | 380 mOhm @ 5.6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 25V 9.2A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 12V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
- Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6,304 |
|
MOSFET (Metal Oxide) | 25V | 9.2A (Ta), 49A (Tc) | - | 2.5V @ 250µA | 13.5nC @ 4.5V | 990pF @ 12V | - | - | 1.27W (Ta), 36.6W (Tc) | 9.3 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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Fairchild/ON Semiconductor |
MOSFET P-CH 20V 1.3A SSOT-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock570,216 |
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MOSFET (Metal Oxide) | 20V | 1.3A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 5nC @ 4.5V | 330pF @ 10V | ±8V | - | 500mW (Ta) | 200 mOhm @ 1.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 11A TO-252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 107 mOhm @ 8A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock630,132 |
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MOSFET (Metal Oxide) | 60V | 11A (Tc) | 5V | 3V @ 250µA | 11.3nC @ 10V | 350pF @ 25V | ±16V | - | 38W (Tc) | 107 mOhm @ 8A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 800V 24A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 650W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
|
Package: TO-264-3, TO-264AA |
Stock82,800 |
|
MOSFET (Metal Oxide) | 800V | 24A (Tc) | 10V | 5V @ 4mA | 105nC @ 10V | 7200pF @ 25V | ±30V | - | 650W (Tc) | 400 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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|
IXYS |
MOSFET N-CH 75V 340A TO268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 935W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
|
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock4,032 |
|
MOSFET (Metal Oxide) | 75V | 340A (Tc) | 10V | 4V @ 3mA | 300nC @ 10V | 19000pF @ 25V | - | - | 935W (Tc) | 3.2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 90A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 267W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock10,884 |
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MOSFET (Metal Oxide) | 100V | 13A (Ta), 90A (Tc) | 10V | 3.9V @ 250µA | 53nC @ 10V | 3430pF @ 50V | ±20V | - | 2.1W (Ta), 267W (Tc) | 7 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 20A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 169W (Tc)
- Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock4,288 |
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MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 4V @ 250µA | 34nC @ 10V | 1360pF @ 100V | ±25V | - | 169W (Tc) | 165 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 60V 20A 8WDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 22W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock5,680 |
|
MOSFET (Metal Oxide) | 60V | 7.6A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 16nC @ 10V | 850pF @ 25V | ±20V | - | 3.2W (Ta), 22W (Tc) | 24 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET P-CH 200V 3.5A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock19,200 |
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MOSFET (Metal Oxide) | 200V | 3.5A (Tc) | 10V | 4V @ 250µA | 22nC @ 10V | 350pF @ 25V | ±20V | - | 3W (Ta), 40W (Tc) | 1.5 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 2.6A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta)
- Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock6,912 |
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MOSFET (Metal Oxide) | 150V | 2.6A (Ta) | 10V | 5V @ 250µA | 19nC @ 10V | 420pF @ 25V | ±30V | - | 2.8W (Ta) | 185 mOhm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 600V 13A D-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 147W (Tc)
- Rds On (Max) @ Id, Vgs: 309 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252AA)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock24,354 |
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MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 4V @ 250µA | 64nC @ 10V | 1205pF @ 100V | ±30V | - | 147W (Tc) | 309 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 120A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock13,560 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 150µA | 170nC @ 10V | 6540pF @ 50V | ±20V | - | 300W (Tc) | 3 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 14A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock197,868 |
|
MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 4V @ 250µA | 68nC @ 10V | 1300pF @ 25V | ±20V | - | 3.1W (Ta), 125W (Tc) | 280 mOhm @ 8.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
Vishay Siliconix |
MOSFET N-CH 900V 1.7A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 54W (Tc)
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock15,870 |
|
MOSFET (Metal Oxide) | 900V | 1.7A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 490pF @ 25V | ±20V | - | 54W (Tc) | 8 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Renesas Electronics Corporation |
POWER TRS2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 75W (Tc)
- Rds On (Max) @ Id, Vgs: 5.7mOhm @ 38A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3ZP)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock22,416 |
|
MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 41 nC @ 10 V | 2450 pF @ 25 V | ±20V | - | 1.2W (Ta), 75W (Tc) | 5.7mOhm @ 38A, 10V | 175°C | Surface Mount | TO-252 (MP-3ZP) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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|
Infineon Technologies |
MOSFET N-CH 800V 7A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 7.2W (Tc)
- Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223
- Package / Case: TO-261-4, TO-261AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 3.5V @ 140µA | 17 nC @ 10 V | 460 pF @ 500 V | ±20V | - | 7.2W (Tc) | 750mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
N-CHANNEL 20-V (D-S) MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 850mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock26,442 |
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MOSFET (Metal Oxide) | 20 V | 3.9A (Ta) | 1.8V, 4.5V | 850mV @ 250µA | 12 nC @ 4.5 V | - | ±8V | - | 750mW (Ta) | 31mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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onsemi |
MOSFET N-CH 60V 8A/25A 5DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.4W (Ta), 28W (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 8A (Ta), 25A (Tc) | 10V | 4V @ 20µA | 5.7 nC @ 10 V | 333 pF @ 30 V | ±20V | - | 3.4W (Ta), 28W (Tc) | 22mOhm @ 3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Diotec Semiconductor |
IC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-QFN (3x3)
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 59 nC @ 10 V | 3300 pF @ 25 V | ±20V | - | 30W (Tc) | 6.5mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-QFN (3x3) | 8-PowerVDFN |
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Harris Corporation |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 80 V | 28A (Tc) | 10V | 4V @ 250µA | 59 nC @ 10 V | 1450 pF @ 25 V | ±20V | - | 150W (Tc) | 77mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -3A, -30V,
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock17,220 |
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MOSFET (Metal Oxide) | 30 V | 3A (Ta) | 4.5V, 10V | 1V @ 250µA | 10 nC @ 10 V | 600 pF @ 15 V | ±20V | - | 1.25W (Ta) | 80mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Micro Commercial Co |
Interface
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 300mW
- Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 7A | 1.8V, 10V | 1V @ 250µA | 15 nC @ 10 V | 890 pF @ 10 V | ±12V | - | 300mW | 20mOhm @ 7A, 10V | -55°C ~ 150°C | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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onsemi |
MOSFET N-CH 80V 6A 6WDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta)
- Rds On (Max) @ Id, Vgs: 36.5mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: - |
Stock44,064 |
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MOSFET (Metal Oxide) | 80 V | 6A (Tc) | 4.5V, 10V | 2.5V @ 20µA | 9 nC @ 10 V | 595 pF @ 40 V | ±20V | - | 2.4W (Ta) | 36.5mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 560V 4.5A DPAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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