|
|
Infineon Technologies |
MOSFET N-CH 30V 174A 2WDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 174A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 30A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MG-WDSON-2, CanPAK M?
- Package / Case: 3-WDSON
|
Package: 3-WDSON |
Stock3,472 |
|
MOSFET (Metal Oxide) | 30V | 32A (Ta), 174A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 92nC @ 10V | 8400pF @ 15V | ±20V | - | 2.8W (Ta), 89W (Tc) | 1.9 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M? | 3-WDSON |
|
|
Nexperia USA Inc. |
MOSFET N-CH 60V 12.9A 6DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 612pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
- Rds On (Max) @ Id, Vgs: 43 mOhm @ 4.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-DFN2020MD (2x2)
- Package / Case: 6-UDFN Exposed Pad
|
Package: 6-UDFN Exposed Pad |
Stock5,808 |
|
MOSFET (Metal Oxide) | 60V | 12.9A (Tc) | 4.5V, 10V | 3V @ 250µA | 24nC @ 10V | 612pF @ 30V | ±20V | - | 1.7W (Ta), 12.5W (Tc) | 43 mOhm @ 4.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN2020MD (2x2) | 6-UDFN Exposed Pad |
|
|
Fairchild/ON Semiconductor |
MOSFET P-CH 400V 1.56A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 1.56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 780mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,368 |
|
MOSFET (Metal Oxide) | 400V | 1.56A (Tc) | 10V | 5V @ 250µA | 13nC @ 10V | 350pF @ 25V | ±30V | - | 2.5W (Ta), 38W (Tc) | 6.5 Ohm @ 780mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 33A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 16.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock7,328 |
|
MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 4V @ 250µA | 52nC @ 10V | 1600pF @ 25V | ±25V | - | 227W (Tc) | 90 mOhm @ 16.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
|
|
IXYS |
MOSFET N-CH 55V 90A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock24,000 |
|
MOSFET (Metal Oxide) | 55V | 90A (Tc) | 10V | 4V @ 50µA | 61nC @ 10V | 2500pF @ 25V | ±20V | - | 176W (Tc) | 8.8 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Diodes Incorporated |
MOSFET N-CH 60V 1.1A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 850mW (Ta)
- Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
|
Package: E-Line-3 |
Stock2,032 |
|
MOSFET (Metal Oxide) | 60V | 1.1A (Ta) | 5V, 10V | 3V @ 1mA | - | 350pF @ 25V | ±20V | - | 850mW (Ta) | 330 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
|
|
Vishay Siliconix |
MOSFET N-CH 400V 3.3A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock392,388 |
|
MOSFET (Metal Oxide) | 400V | 3.3A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 410pF @ 25V | ±20V | - | 50W (Tc) | 1.8 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Infineon Technologies |
MOSFET N-CH 650V TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 400V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 101W (Tc)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 8.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock5,664 |
|
MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | ±20V | - | 101W (Tc) | 125 mOhm @ 8.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 20A TO262F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1038pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 28W (Tc)
- Rds On (Max) @ Id, Vgs: 199 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: -
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3,072 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 4.1V @ 250µA | 19.8nC @ 10V | 1038pF @ 100V | ±30V | - | 28W (Tc) | 199 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Long Leads, I2Pak, TO-262AA |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N CH 100V 6.5A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 53.5W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock213,600 |
|
MOSFET (Metal Oxide) | 100V | 6.5A (Ta), 31A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 25nC @ 10V | 1190pF @ 15V | ±20V | - | 2.5W (Ta), 53.5W (Tc) | 24 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
STMicroelectronics |
MOSFET N-CH 1050V 4A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1050V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock3,488 |
|
MOSFET (Metal Oxide) | 1050V | 4A (Tc) | 10V | 5V @ 100µA | 17nC @ 10V | 380pF @ 100V | ±30V | - | 110W (Tc) | 2 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
Diodes Incorporated |
MOSFET N-CH 80V 9.5A PWDI3333-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1949pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
|
Package: 8-PowerWDFN |
Stock4,432 |
|
MOSFET (Metal Oxide) | 80V | 9.5A (Ta), 35A (Tc) | 6V, 10V | 3V @ 250µA | 34nC @ 10V | 1949pF @ 40V | ±20V | - | 2.2W (Ta), 30W (Tc) | 16 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
|
|
Diodes Incorporated |
MOSFET N-CH 20V 2A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock26,406 |
|
MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.8V, 4.5V | 1V @ 250µA | - | 188pF @ 10V | ±12V | - | 600mW (Ta) | 110 mOhm @ 2.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
|
|
MOSLEADER |
P-Channel -20V -1.3A SOT-23-3
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Diodes Incorporated |
MOSFET BVDSS: 25V~30V POWERDI333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 19.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 5.7A (Ta), 19.9A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 13.6 nC @ 10 V | 782 pF @ 15 V | ±20V | - | 900mW (Ta) | 42mOhm @ 4.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
|
|
Infineon Technologies |
MOSFET N-CH 20V 10A PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 6-PQFN (2x2)
- Package / Case: 6-PowerVDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 10A (Ta), 12A (Tc) | - | 1.1V @ 10µA | 14 nC @ 4.5 V | 1110 pF @ 10 V | - | - | - | 11.7mOhm @ 8.5A, 4.5V | - | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
|
|
Panjit International Inc. |
650V N-CHANNEL MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 4A (Ta) | 10V | 4V @ 250µA | 11.4 nC @ 10 V | 463 pF @ 25 V | ±30V | - | - | 2.7Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
|
Diodes Incorporated |
2N7002 FAMILY SOT523 T&R 10K
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 260mW (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 350mA (Ta) | 1.8V, 5V | 1V @ 250µA | 0.4 nC @ 4.5 V | 28.5 pF @ 30 V | ±20V | - | 260mW (Ta) | 2Ohm @ 50mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
|
|
Comchip Technology |
MOSFET N-CH 65V 27A/93A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 65 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 73W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: P-PAK (5x6)
- Package / Case: 8-PowerTDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 65 V | 27A (Ta), 93A (Tc) | 4.5V, 10V | 3V @ 250µA | 26 nC @ 4.5 V | 1790 pF @ 30 V | ±20V | - | 73W (Tc) | 4.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | P-PAK (5x6) | 8-PowerTDFN |
|
|
STMicroelectronics |
H2PAK-7
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Vgs(th) (Max) @ Id: 4.2V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 3880 pF @ 600 V
- Vgs (Max): +18V, -5V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Rds On (Max) @ Id, Vgs: 15.8mOhm @ 60A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-7
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
|
Package: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 900 V | 110A (Tc) | 15V, 18V | 4.2V @ 10mA | 138 nC @ 18 V | 3880 pF @ 600 V | +18V, -5V | - | 625W (Tc) | 15.8mOhm @ 60A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
|
|
onsemi |
MOSFET N-CH 40V 17A/52A 4LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
- Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
|
Package: - |
Stock8,259 |
|
MOSFET (Metal Oxide) | 40 V | 17A (Ta), 52A (Tc) | 4.5V, 10V | 2V @ 30µA | 16 nC @ 10 V | 860 pF @ 25 V | ±20V | - | 3.8W (Ta), 38W (Tc) | 7.3mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
|
|
Central Semiconductor Corp |
MOSFET N-CH 60V 280MA SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
- Vgs (Max): 40V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: - |
Stock314,190 |
|
MOSFET (Metal Oxide) | 60 V | 280mA (Ta) | 5V, 10V | 2.5V @ 250µA | - | 50 pF @ 25 V | 40V | - | 350mW (Ta) | 2Ohm @ 500mA, 10V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
Panjit International Inc. |
30V P-CHANNEL ENHANCEMENT MODE M
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
- Rds On (Max) @ Id, Vgs: 15.4mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333-8
- Package / Case: 8-PowerVDFN
|
Package: - |
Stock14,940 |
|
MOSFET (Metal Oxide) | 30 V | 10A (Ta), 41A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 32 nC @ 10 V | 1270 pF @ 25 V | ±25V | - | 2.5W (Ta), 41W (Tc) | 15.4mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN3333-8 | 8-PowerVDFN |
|
|
Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 306W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: - |
Stock141 |
|
MOSFET (Metal Oxide) | 100 V | 100A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 161 nC @ 10 V | 9500 pF @ 50 V | ±20V | - | 306W (Tc) | 2.9mOhm @ 50A, 10V | 175°C | Through Hole | TO-220 | TO-220-3 |
|
|
Diodes Incorporated |
MOSFET N-CH 20V 900MA 3DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN1212-3 (Type C)
- Package / Case: 3-PowerUDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 1.1A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 0.7 nC @ 4.5 V | 52 pF @ 16 V | ±12V | - | 500mW (Ta) | 200mOhm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN1212-3 (Type C) | 3-PowerUDFN |
|
|
Infineon Technologies |
MOSFET N-CH 100V 40A TDSON-8-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-6
- Package / Case: 8-PowerTDFN
|
Package: - |
Stock25,755 |
|
MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 4.5V, 10V | 2.3V @ 36µA | 14.6 nC @ 4.5 V | 2100 pF @ 50 V | ±20V | - | 3W (Ta), 83W (Tc) | 9.6mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
|
|
MOSLEADER |
Single N 30V 3.5A SOT23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Renesas Electronics Corporation |
MOSFET N-CH 50V 100MA SC70-3 SSP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 3 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold
- Package / Case: SC-70, SOT-323
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 50 V | 100mA (Ta) | - | 1.5V @ 1µA | - | 6000 pF @ 3 V | - | - | - | 20Ohm @ 10mA, 4V | - | Surface Mount | SC-70-3, SSP, Miniature Mini Mold | SC-70, SOT-323 |