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Infineon Technologies |
MOSFET N-CH TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 40A, 4.5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock4,144 |
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MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 2.2V @ 60µA | 110nC @ 10V | 8180pF @ 25V | ±16V | - | 107W (Tc) | 8.5 mOhm @ 40A, 4.5V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 20A TO-220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 31W (Tc)
- Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,704 |
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MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 10nC @ 10V | 1000pF @ 15V | ±20V | - | 31W (Tc) | 14.7 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 150V 13A TO-262
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
- Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock9,744 |
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MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | ±20V | - | 3.8W (Ta), 110W (Tc) | 290 mOhm @ 6.6A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH SSOT6
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock7,648 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 20V 0.89A SOT723
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-723
- Package / Case: SOT-723
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Package: SOT-723 |
Stock491,040 |
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- | - | - | 1.5V, 4.5V | - | - | - | ±6V | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | SOT-723 | SOT-723 |
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ON Semiconductor |
MOSFET P-CH 8V 3.7A 6-WDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 720mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 4V
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: 6-WDFN Exposed Pad |
Stock5,664 |
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MOSFET (Metal Oxide) | 8V | 3.7A (Ta) | 1.2V, 4.5V | 720mV @ 250µA | 25nC @ 4.5V | 1585pF @ 4V | ±6V | - | 700mW (Ta) | 36 mOhm @ 6.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 18A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3845pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock323,388 |
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MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 3V @ 250µA | 48nC @ 5V | 3845pF @ 15V | ±20V | - | 2.5W (Ta) | 4 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 60V 12A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
- Rds On (Max) @ Id, Vgs: 94 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock15,336 |
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MOSFET (Metal Oxide) | 60V | 12A (Ta) | 10V | 4V @ 250µA | 20nC @ 10V | 450pF @ 25V | ±20V | - | 1.5W (Ta), 48W (Tj) | 94 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 350V 0.09A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350V
- Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 35 Ohm @ 100mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
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Package: E-Line-3 |
Stock6,304 |
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MOSFET (Metal Oxide) | 350V | 90mA (Ta) | 10V | 3V @ 1mA | - | 70pF @ 25V | ±20V | - | 700mW (Ta) | 35 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 200V 4.9A D-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 234pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Ta)
- Rds On (Max) @ Id, Vgs: 720 mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,936 |
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MOSFET (Metal Oxide) | 200V | 4.9A (Ta) | 10V | 4.5V @ 250µA | 11nC @ 10V | 234pF @ 100V | ±20V | - | 42W (Ta) | 720 mOhm @ 1.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 240V 260MA SOT89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240V
- Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 97pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT89-4-2
- Package / Case: TO-243AA
|
Package: TO-243AA |
Stock6,192 |
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MOSFET (Metal Oxide) | 240V | 260mA (Ta) | 4.5V, 10V | 1.8V @ 108µA | 5.5nC @ 10V | 97pF @ 25V | ±20V | - | 1W (Ta) | 6 Ohm @ 260mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT89-4-2 | TO-243AA |
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Texas Instruments |
N-CHANNEL NEXFET POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5070pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (5x6)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock6,672 |
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MOSFET (Metal Oxide) | 40V | 100A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 33nC @ 4.5V | 5070pF @ 20V | ±20V | - | 3.2W (Ta), 156W (Tc) | 2.3 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 22.4A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4190pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 5.9W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock14,856 |
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MOSFET (Metal Oxide) | 30V | 22.4A (Tc) | 4.5V, 10V | 2.7V @ 1mA | 100nC @ 10V | 4190pF @ 15V | ±20V | - | 3W (Ta), 5.9W (Tc) | 6.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 40V 55A POWERFLAT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
- Vgs (Max): 40V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 13A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat? (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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Package: 8-PowerSMD, Flat Leads |
Stock4,528 |
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MOSFET (Metal Oxide) | 40V | 55A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 3700pF @ 25V | 40V | - | 96W (Tc) | 3.6 mOhm @ 13A, 10V | 175°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerSMD, Flat Leads |
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IXYS |
MOSFET N-CH 200V 106A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 106A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock6,684 |
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MOSFET (Metal Oxide) | 200V | 106A | 10V | 4V @ 8mA | 380nC @ 10V | 9000pF @ 25V | ±20V | - | 520W (Tc) | 20 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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ON Semiconductor |
T6 40V MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock7,424 |
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MOSFET (Metal Oxide) | 40V | 35A (Ta), 185A (Tc) | 10V | 3.5V @ 250µA | 10nC @ 10V | 3300pF @ 25V | ±20V | - | 3.8W (Ta), 106W (Tc) | 1.7 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 24V 195A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7590pF @ 24V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 195A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock17,316 |
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MOSFET (Metal Oxide) | 24V | 195A (Tc) | 10V | 4V @ 250µA | 240nC @ 10V | 7590pF @ 24V | ±20V | - | 300W (Tc) | 1.5 mOhm @ 195A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET P-CH 30V 530MA SOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 76pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 450mW (Ta)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 400mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock25,620 |
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MOSFET (Metal Oxide) | 30V | 530mA (Ta) | 1.8V, 4.5V | 1.1V @ 250µA | 0.9nC @ 4.5V | 76pF @ 15V | ±8V | - | 450mW (Ta) | 1 Ohm @ 400mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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IXYS |
MOSFET N-CH 650V 18A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 290W (Tc)
- Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Isolated Tab
- Package / Case: TO-220-3 Full Pack, Isolated Tab
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 18A (Tc) | 10V | 5V @ 1.5mA | 29 nC @ 10 V | 1520 pF @ 25 V | ±30V | - | 290W (Tc) | 200mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
MOSFET N-CH 1200V 6A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Stock2,898 |
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MOSFET (Metal Oxide) | 1200 V | 6A (Tc) | 10V | 5V @ 100µA | 13.7 nC @ 10 V | 505 pF @ 100 V | ±30V | - | 130W (Tc) | 2Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 4V @ 250µA | 50 nC @ 10 V | 1800 pF @ 25 V | ±30V | - | 3.13W (Ta), 147W (Tc) | 1.2Ohm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 30V 150A PWRDI5060-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: - |
Stock37,425 |
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MOSFET (Metal Oxide) | 30 V | 150A (Tc) | 4.5V, 10V | 3V @ 1mA | 68 nC @ 10 V | 3944 pF @ 25 V | ±20V | - | 100W (Tc) | 2mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 60 V (D-S)
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 29.4W (Tc)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
Stock25,890 |
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MOSFET (Metal Oxide) | 60 V | 24A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 20 nC @ 10 V | 987 pF @ 25 V | ±20V | - | 29.4W (Tc) | 36mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 6TSOP
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Central Semiconductor Corp |
MOSFET N-CH 20V 100MA SOT883
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.57 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V
- Vgs (Max): 10V
- FET Feature: -
- Power Dissipation (Max): 100mW (Ta)
- Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-883
- Package / Case: SC-101, SOT-883
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Package: - |
Stock25,089 |
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MOSFET (Metal Oxide) | 20 V | 100mA (Ta) | 1.5V, 4V | 900mV @ 250µA | 0.57 nC @ 4.5 V | 9 pF @ 3 V | 10V | - | 100mW (Ta) | 3Ohm @ 10mA, 4V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883 | SC-101, SOT-883 |
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Nexperia USA Inc. |
NEXTPOWER 80/100V MOSFETS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6009 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 238W (Ta)
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: - |
Stock4,500 |
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MOSFET (Metal Oxide) | 80 V | 100A (Ta) | 7V, 10V | 4V @ 1mA | 90 nC @ 10 V | 6009 pF @ 40 V | ±20V | - | 238W (Ta) | 4.5mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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onsemi |
MOSFET N-CH 150V 19A/187A 8HPSOF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 187A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 584µA
- Gate Charge (Qg) (Max) @ Vgs: 90.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7490 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.4W (Ta), 316W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HPSOF
- Package / Case: 8-PowerSFN
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Package: - |
Stock5,382 |
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MOSFET (Metal Oxide) | 150 V | 19A (Ta), 187A (Tc) | 8V, 10V | 4.5V @ 584µA | 90.4 nC @ 10 V | 7490 pF @ 75 V | ±20V | - | 3.4W (Ta), 316W (Tc) | 4.4mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 11A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 131W (Tc)
- Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Stock3,015 |
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MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 3.8V @ 250µA | 20 nC @ 10 V | 955 pF @ 100 V | ±20V | - | 131W (Tc) | 380mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |