Page 504 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

NTR2101PT1
ON Semiconductor

MOSFET P-CH 8V 3.7A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock4,976
NDT455N
Fairchild/ON Semiconductor

MOSFET N-CH 30V 11.5A SOT-223

Package: TO-261-4, TO-261AA

Stock139,140
STD5N20T4
STMicroelectronics

MOSFET N-CH 200V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock194,400
IXFX14N100
IXYS

MOSFET N-CH 1000V 14A PLUS247

Package: TO-247-3

Stock103,464
SIE818DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 75V 60A POLARPAK

Package: 10-PolarPAK? (L)

Stock7,360
FQPF10N50CF
Fairchild/ON Semiconductor

MOSFET N-CH 500V 10A TO-220F

Package: TO-220-3 Full Pack

Stock18,576
IXTY2N80P
IXYS

MOSFET N-CH 800V 2A TO-252AA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,504
DMT3020LFDF-13
Diodes Incorporated

MOSFET NCH 30V 8.4A UDFN2020

Package: 6-UDFN Exposed Pad

Stock7,984
DMG1013TQ-7
Diodes Incorporated

MOSFET BVDSS: 8V 24V SOT523

Package: SOT-523

Stock3,504
IRFS7540TRLPBF
Infineon Technologies

MOSFET N CH 60V 110A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,608
R5011ANX
Rohm Semiconductor

MOSFET N-CH 500V 11A TO220

Package: TO-220-2 Full Pack

Stock10,056
IRF3709PBF
Infineon Technologies

MOSFET N-CH 30V 90A TO-220AB

Package: TO-220-3

Stock6,352
IPD50R3K0CEAUMA1
Infineon Technologies

MOSFET N-CH 500V 1.7A PG-TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,872
IPB160N04S4H1ATMA1
Infineon Technologies

MOSFET N-CH 40V 160A TO263-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock18,240
PMV48XPAR
Nexperia USA Inc.

MOSFET P-CH 20V 3.5A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock85,182
FDA38N30
Fairchild/ON Semiconductor

MOSFET N-CH 300V TO-3

Package: TO-3P-3, SC-65-3

Stock35,826
AO3416
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 20V 6.5A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock11,487,468
G2305
Goford Semiconductor

P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7

Package: -

Stock26,790
UPA2701GR-E1-AT
Renesas Electronics Corporation

MOSFET N-CH 30V 14A 8PSOP

Package: -

Request a Quote
PJD45N06A-AU_L2_000A1
Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTR2101PT1	ON Semiconductor	MOSFET P-CH 8V 3.7A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1173pF @ 4V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 960mW (Ta) Rds On (Max) @ Id, Vgs: 52 mOhm @ 3.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,976	MOSFET (Metal Oxide)	8V	-	1.8V, 4.5V	1V @ 250µA	15nC @ 4.5V	1173pF @ 4V	±8V	-	960mW (Ta)	52 mOhm @ 3.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NDT455N	Fairchild/ON Semiconductor	MOSFET N-CH 30V 11.5A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 11.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock139,140	MOSFET (Metal Oxide)	30V	11.5A (Ta)	4.5V, 10V	3V @ 250µA	61nC @ 10V	1220pF @ 15V	20V	-	3W (Ta)	15 mOhm @ 11.5A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
STD5N20T4	STMicroelectronics	MOSFET N-CH 200V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock194,400	MOSFET (Metal Oxide)	200V	5A (Tc)	10V	4V @ 250µA	27nC @ 10V	350pF @ 25V	±20V	-	45W (Tc)	800 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFX14N100	IXYS	MOSFET N-CH 1000V 14A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	1000V	14A (Tc)	10V	4.5V @ 4mA	220nC @ 10V	4500pF @ 25V	±20V	-	360W (Tc)	750 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
SIE818DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 75V 60A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 38V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (L) Package / Case: 10-PolarPAK? (L)	Package: 10-PolarPAK? (L)	Stock7,360	MOSFET (Metal Oxide)	75V	60A (Tc)	4.5V, 10V	3V @ 250µA	95nC @ 10V	3200pF @ 38V	±20V	-	5.2W (Ta), 125W (Tc)	9.5 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (L)	10-PolarPAK? (L)
FQPF10N50CF	Fairchild/ON Semiconductor	MOSFET N-CH 500V 10A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2096pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 610 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock18,576	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	4V @ 250µA	56nC @ 10V	2096pF @ 25V	±30V	-	48W (Tc)	610 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IXTY2N80P	IXYS	MOSFET N-CH 800V 2A TO-252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,504	MOSFET (Metal Oxide)	800V	2A (Tc)	10V	5.5V @ 50µA	10.6nC @ 10V	440pF @ 25V	±30V	-	70W (Tc)	6 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
DMT3020LFDF-13	Diodes Incorporated	MOSFET NCH 30V 8.4A UDFN2020 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 1.8W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock7,984	MOSFET (Metal Oxide)	30V	8.4A (Ta)	4.5V, 10V	2.5V @ 250µA	70nC @ 10V	393pF @ 15V	±20V	-	700mW (Ta), 1.8W (Tc)	17 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
DMG1013TQ-7	Diodes Incorporated	MOSFET BVDSS: 8V 24V SOT523 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 270mW (Ta) Rds On (Max) @ Id, Vgs: 700 mOhm @ 350mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: SOT-523	Stock3,504	MOSFET (Metal Oxide)	20V	460mA (Ta)	1.8V, 4.5V	1V @ 250µA	0.58nC @ 4.5V	59.76pF @ 16V	±6V	-	270mW (Ta)	700 mOhm @ 350mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
IRFS7540TRLPBF	Infineon Technologies	MOSFET N CH 60V 110A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4555pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 65A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,608	MOSFET (Metal Oxide)	60V	110A (Tc)	6V, 10V	3.7V @ 100µA	130nC @ 10V	4555pF @ 25V	±20V	-	160W (Tc)	5.1 mOhm @ 65A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
R5011ANX	Rohm Semiconductor	MOSFET N-CH 500V 11A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock10,056	MOSFET (Metal Oxide)	500V	11A (Ta)	10V	4.5V @ 1mA	30nC @ 10V	1000pF @ 25V	±30V	-	50W (Tc)	500 mOhm @ 5.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
IRF3709PBF	Infineon Technologies	MOSFET N-CH 30V 90A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,352	MOSFET (Metal Oxide)	30V	90A (Tc)	4.5V, 10V	3V @ 250µA	41nC @ 5V	2672pF @ 16V	±20V	-	3.1W (Ta), 120W (Tc)	9 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPD50R3K0CEAUMA1	Infineon Technologies	MOSFET N-CH 500V 1.7A PG-TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 84pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 400mA, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,872	MOSFET (Metal Oxide)	500V	1.7A (Tc)	13V	3.5V @ 30µA	4.3nC @ 10V	84pF @ 100V	±20V	-	26W (Tc)	3 Ohm @ 400mA, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPB160N04S4H1ATMA1	Infineon Technologies	MOSFET N-CH 40V 160A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10920pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock18,240	MOSFET (Metal Oxide)	40V	160A (Tc)	10V	4V @ 110µA	137nC @ 10V	10920pF @ 25V	±20V	-	167W (Tc)	1.6 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
PMV48XPAR	Nexperia USA Inc.	MOSFET P-CH 20V 3.5A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 510mW (Ta), 4.15W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock85,182	MOSFET (Metal Oxide)	20V	3.5A (Ta)	2.5V, 4.5V	1.25V @ 250µA	11nC @ 4.5V	1000pF @ 10V	±12V	-	510mW (Ta), 4.15W (Tc)	55 mOhm @ 2.4A, 4.5V	150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
FDA38N30	Fairchild/ON Semiconductor	MOSFET N-CH 300V TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock35,826	MOSFET (Metal Oxide)	300V	38A (Tc)	10V	5V @ 250µA	60nC @ 10V	2600pF @ 25V	±30V	-	312W (Tc)	85 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
AO3416	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 20V 6.5A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3L Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock11,487,468	MOSFET (Metal Oxide)	20V	6.5A (Ta)	1.8V, 4.5V	1V @ 250µA	16nC @ 4.5V	1160pF @ 10V	±8V	-	1.4W (Ta)	22 mOhm @ 6.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3L	TO-236-3, SC-59, SOT-23-3
G2305	Goford Semiconductor	P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.7W (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock26,790	MOSFET (Metal Oxide)	20 V	4.8A (Tc)	2.5V, 4.5V	900mV @ 250µA	7.8 nC @ 4.5 V	-	±10V	-	1.7W (Tc)	46mOhm @ 4.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
UPA2701GR-E1-AT	Renesas Electronics Corporation	MOSFET N-CH 30V 14A 8PSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 7.5mOhm @ 7A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PSOP Package / Case: 8-SOIC (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	14A (Ta)	-	2.5V @ 1mA	12 nC @ 5 V	1200 pF @ 10 V	-	-	-	7.5mOhm @ 7A, 10V	-	Surface Mount	8-PSOP	8-SOIC (0.173", 4.40mm Width)
PJD45N06A-AU_L2_000A1	Panjit International Inc.	60V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	45A (Tc)	4.5V, 10V	2.5V @ 250µA	39 nC @ 10 V	2256 pF @ 25 V	±20V	-	75W (Tc)	12mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMN4035L-7	Diodes Incorporated	MOSFET N-CH 40V 4.6A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 720mW Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock21,549	MOSFET (Metal Oxide)	40 V	4.6A (Ta)	4.5V, 10V	3V @ 250µA	12.5 nC @ 10 V	574 pF @ 20 V	±20V	-	720mW	42mOhm @ 4.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
STFH12N105K5	STMicroelectronics	DISCRETE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 559 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	1050 V	8A (Tc)	10V	5V @ 100µA	18.4 nC @ 10 V	559 pF @ 100 V	±30V	-	29W (Tc)	1Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
SQS180ENW-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 80 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3092 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 8.67mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerPAK® 1212-8SLW Package / Case: PowerPAK® 1212-8SLW	Package: -	Stock8,901	MOSFET (Metal Oxide)	80 V	72A (Tc)	10V	3.5V @ 250µA	56 nC @ 10 V	3092 pF @ 25 V	±20V	-	119W (Tc)	8.67mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerPAK® 1212-8SLW	PowerPAK® 1212-8SLW
RJK0394DPA-02-J53	Renesas Electronics Corporation	POWER TRANSISTOR, MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
G18P03D3	Goford Semiconductor	P30V,RD(MAX)<10M@-10V,RD(MAX)<15 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3.15x3.05) Package / Case: 8-PowerVDFN	Package: -	Stock17,955	MOSFET (Metal Oxide)	30 V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	30 nC @ 10 V	2060 pF @ 15 V	±20V	-	60W (Tc)	10mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3.15x3.05)	8-PowerVDFN
BSC0703LSATMA1	Infineon Technologies	MOSFET N-CH 60V 15A/64A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	Package: -	Stock5,220	MOSFET (Metal Oxide)	60 V	15A (Ta), 64A (Tc)	4.5V, 10V	2.3V @ 20µA	13 nC @ 4.5 V	1800 pF @ 30 V	±20V	-	2.5W (Ta), 46W (Tc)	6.5mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
RJK0358DPA-WS-J0	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRLMS2002TR	Infineon Technologies	MOSFET N-CH 20V 6.5A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Micro6™(SOT23-6) Package / Case: SOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	6.5A (Ta)	-	1.2V @ 250µA	22 nC @ 5 V	1310 pF @ 15 V	-	-	-	30mOhm @ 6.5A, 4.5V	-	Surface Mount	Micro6™(SOT23-6)	SOT-23-6