Page 508 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7807ATR
Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock22,536
JAN2N6901
Microsemi Corporation

MOSFET N-CH 100V 1.69A TO-205AF

Package: TO-205AF Metal Can

Stock38,844
IXFJ40N30
IXYS

MOSFET N-CH 300V 40A TO-220

Package: TO-220-3, Short Tab

Stock7,312
FDZ209N
Fairchild/ON Semiconductor

MOSFET N-CH 60V 4A 12-BGA

Package: 12-WFBGA

Stock7,472
RK7002T116
Rohm Semiconductor

MOSFET N-CH 60V 115MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock3,758,580
IRF510
Vishay Siliconix

MOSFET N-CH 100V 5.6A TO-220AB

Package: TO-220-3

Stock390,672
STF10NM65N
STMicroelectronics

MOSFET N-CH 650V 9A TO-220FP

Package: TO-220-3 Full Pack

Stock32,232
APT70SM70J
Microsemi Corporation

POWER MOSFET - SIC

Package: SOT-227-4, miniBLOC

Stock2,032
IXTP36N30T
IXYS

MOSFET N-CH 300V 36A TO-220

Package: TO-220-3

Stock2,624
DMP2066LDMQ-7
Diodes Incorporated

MOSFET P-CH 20V 4.6A SOT-26

Package: SOT-23-6

Stock3,840
DMN3025LFDF-13
Diodes Incorporated

MOSFET BVDSS: 25V 30V U-DFN2020-

Package: 6-UDFN Exposed Pad

Stock7,152
SUM90220E-GE3
Vishay Siliconix

MOSFET N-CH 200V 64A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,280
STP130N6F7
STMicroelectronics

MOSFET N-CH 60V 80A F7 TO220AB

Package: TO-220-3

Stock22,128
NTB35N15T4G
ON Semiconductor

MOSFET N-CH 150V 37A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock435,936
IRFR2405TRPBF
Infineon Technologies

MOSFET N-CH 55V 56A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock397,752
STB30NF20
STMicroelectronics

MOSFET N-CH 200V 30A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock743,688
ZVP2106GTA
Diodes Incorporated

MOSFET P-CH 60V 450MA SOT223

Package: TO-261-4, TO-261AA

Stock353,004
AON7423
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 28A 8DFN

Package: 8-PowerWDFN

Stock699,336
TSM22P10CI-C0G
Taiwan Semiconductor Corporation

MOSFET P-CH 100V 22A ITO220

Package: -

Request a Quote
NVMJS1D3N04CTWG
onsemi

MOSFET N-CH 40V 41A/235A 8LFPAK

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7807ATR	Infineon Technologies	MOSFET N-CH 30V 8.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock22,536	MOSFET (Metal Oxide)	30V	8.3A (Ta)	4.5V	1V @ 250µA	17nC @ 5V	-	±12V	-	2.5W (Ta)	25 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
JAN2N6901	Microsemi Corporation	MOSFET N-CH 100V 1.69A TO-205AF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 8.33W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.07A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	Package: TO-205AF Metal Can	Stock38,844	MOSFET (Metal Oxide)	100V	1.69A (Tc)	5V	2V @ 1mA	5nC @ 5V	-	±10V	-	8.33W (Tc)	1.4 Ohm @ 1.07A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-205AF (TO-39)	TO-205AF Metal Can
IXFJ40N30	IXYS	MOSFET N-CH 300V 40A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-268 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock7,312	MOSFET (Metal Oxide)	300V	40A (Tc)	10V	4V @ 4mA	200nC @ 10V	4800pF @ 25V	±20V	-	300W (Tc)	80 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-268	TO-220-3, Short Tab
FDZ209N	Fairchild/ON Semiconductor	MOSFET N-CH 60V 4A 12-BGA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 657pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 80 mOhm @ 4A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 12-BGA (2x2.5) Package / Case: 12-WFBGA	Package: 12-WFBGA	Stock7,472	MOSFET (Metal Oxide)	60V	4A (Ta)	5V	3V @ 250µA	9nC @ 5V	657pF @ 30V	±20V	-	2W (Ta)	80 mOhm @ 4A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	12-BGA (2x2.5)	12-WFBGA
RK7002T116	Rohm Semiconductor	MOSFET N-CH 60V 115MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SST3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,758,580	MOSFET (Metal Oxide)	60V	115mA (Ta)	5V, 10V	2.5V @ 1mA	-	50pF @ 25V	±20V	-	225mW (Ta)	7.5 Ohm @ 500mA, 10V	150°C (TJ)	Surface Mount	SST3	TO-236-3, SC-59, SOT-23-3
IRF510	Vishay Siliconix	MOSFET N-CH 100V 5.6A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,672	MOSFET (Metal Oxide)	100V	5.6A (Tc)	10V	4V @ 250µA	8.3nC @ 10V	180pF @ 25V	±20V	-	43W (Tc)	540 mOhm @ 3.4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STF10NM65N	STMicroelectronics	MOSFET N-CH 650V 9A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock32,232	MOSFET (Metal Oxide)	650V	9A (Tc)	10V	4V @ 250µA	25nC @ 10V	850pF @ 50V	±25V	-	25W (Tc)	480 mOhm @ 4.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
APT70SM70J	Microsemi Corporation	POWER MOSFET - SIC FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 32.5A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock2,032	SiCFET (Silicon Carbide)	700V	49A (Tc)	20V	2.5V @ 1mA	125nC @ 20V	-	+25V, -10V	-	165W (Tc)	70 mOhm @ 32.5A, 20V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
IXTP36N30T	IXYS	MOSFET N-CH 300V 36A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,624	MOSFET (Metal Oxide)	300V	36A (Tc)	-	-	70nC @ 10V	2250pF @ 25V	-	-	-	110 mOhm @ 500mA, 10V	-	Through Hole	TO-220AB	TO-220-3
DMP2066LDMQ-7	Diodes Incorporated	MOSFET P-CH 20V 4.6A SOT-26 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	Package: SOT-23-6	Stock3,840	MOSFET (Metal Oxide)	20V	4.6A (Ta)	2.5V, 4.5V	1.2V @ 250µA	10.1nC @ 4.5V	820pF @ 15V	±12V	-	1.25W (Ta)	40 mOhm @ 4.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-26	SOT-23-6
DMN3025LFDF-13	Diodes Incorporated	MOSFET BVDSS: 25V 30V U-DFN2020- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock7,152	MOSFET (Metal Oxide)	30V	9.9A (Ta)	4.5V, 10V	2V @ 250µA	13.2nC @ 10V	641pF @ 15V	±20V	-	2.1W (Ta)	20.5 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
SUM90220E-GE3	Vishay Siliconix	MOSFET N-CH 200V 64A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,280	MOSFET (Metal Oxide)	200V	64A (Tc)	7.5V, 10V	4V @ 250µA	48nC @ 10V	1950pF @ 100V	±20V	-	230W (Tc)	-	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STP130N6F7	STMicroelectronics	MOSFET N-CH 60V 80A F7 TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock22,128	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 250µA	42nC @ 10V	2600pF @ 25V	±20V	-	160W (Tc)	5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTB35N15T4G	ON Semiconductor	MOSFET N-CH 150V 37A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 37A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 178W (Tj) Rds On (Max) @ Id, Vgs: 50 mOhm @ 18.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock435,936	MOSFET (Metal Oxide)	150V	37A (Ta)	10V	4V @ 250µA	100nC @ 10V	3200pF @ 25V	±20V	-	2W (Ta), 178W (Tj)	50 mOhm @ 18.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR2405TRPBF	Infineon Technologies	MOSFET N-CH 55V 56A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2430pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock397,752	MOSFET (Metal Oxide)	55V	56A (Tc)	10V	4V @ 250µA	110nC @ 10V	2430pF @ 25V	±20V	-	110W (Tc)	16 mOhm @ 34A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STB30NF20	STMicroelectronics	MOSFET N-CH 200V 30A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1597pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock743,688	MOSFET (Metal Oxide)	200V	30A (Tc)	10V	4V @ 250µA	38nC @ 10V	1597pF @ 25V	±20V	-	125W (Tc)	75 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
ZVP2106GTA	Diodes Incorporated	MOSFET P-CH 60V 450MA SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 18V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock353,004	MOSFET (Metal Oxide)	60V	450mA (Ta)	10V	3.5V @ 1mA	-	100pF @ 18V	±20V	-	2W (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
AON7423	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V 28A 8DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5626pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock699,336	MOSFET (Metal Oxide)	20V	28A (Ta), 50A (Tc)	1.5V, 4.5V	900mV @ 250µA	100nC @ 4.5V	5626pF @ 10V	±8V	-	6.2W (Ta), 83W (Tc)	5 mOhm @ 20A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3.3x3.3)	8-PowerWDFN
TSM22P10CI-C0G	Taiwan Semiconductor Corporation	MOSFET P-CH 100V 22A ITO220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 30 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	22A (Tc)	4.5V, 10V	3V @ 250µA	42 nC @ 10 V	2250 pF @ 30 V	±25V	-	48W (Tc)	140mOhm @ 20A, 10V	150°C (TJ)	Through Hole	ITO-220	TO-220-3 Full Pack, Isolated Tab
NVMJS1D3N04CTWG	onsemi	MOSFET N-CH 40V 41A/235A 8LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 170µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: SOT-1205, 8-LFPAK56	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	41A (Ta), 235A (Tc)	10V	3.5V @ 170µA	65 nC @ 10 V	4300 pF @ 25 V	±20V	-	3.8W (Ta), 128W (Tc)	1.3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-LFPAK	SOT-1205, 8-LFPAK56
MGSF1N02ELT1G	onsemi	MOSFET POWER 750MA 20V SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA60R360CFD7XKSA1	Infineon Technologies	MOSFET N-CH 650V 5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 23W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: -	Stock1,410	MOSFET (Metal Oxide)	650 V	5A (Tc)	10V	4.5V @ 140µA	14 nC @ 10 V	679 pF @ 400 V	±20V	-	23W (Tc)	360mOhm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
TSM060NB06LCZ-C0G	Taiwan Semiconductor Corporation	60V, 111A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 111A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6273 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock11,985	MOSFET (Metal Oxide)	60 V	13A (Ta), 111A (Tc)	4.5V, 10V	2.5V @ 250µA	107 nC @ 10 V	6273 pF @ 30 V	±20V	-	2W (Ta), 156W (Tc)	6mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
2SK680A-T2-AZ	Renesas Electronics Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIRS4400DP-T1-RE3	Vishay Siliconix	N-CHANNEL 40 V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 77A (Ta), 440A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.4W (Ta), 240W (Tc) Rds On (Max) @ Id, Vgs: 0.69mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	77A (Ta), 440A (Tc)	4.5V, 10V	2.3V @ 250µA	295 nC @ 10 V	13730 pF @ 20 V	±20V	-	7.4W (Ta), 240W (Tc)	0.69mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
STFU23N80K5	STMicroelectronics	MOSFET N-CH 800V 16A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: -	Stock2,097	MOSFET (Metal Oxide)	800 V	16A (Tc)	10V	5V @ 100µA	33 nC @ 10 V	1000 pF @ 100 V	±30V	-	35W (Tc)	280mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
SI3400A-TP	Micro Commercial Co	MOSFET N-CH 30V 5.8A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 400mW Rds On (Max) @ Id, Vgs: 32mOhm @ 5.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock19,803	MOSFET (Metal Oxide)	30 V	5.8A (Tj)	2.5V, 10V	1.4V @ 250µA	-	1155 pF @ 15 V	±12V	-	400mW	32mOhm @ 5.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
NTR3A052PZT1G	onsemi	MOSFET P-CH 20V 3.6A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 4 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock6,435	MOSFET (Metal Oxide)	20 V	3.6A (Ta)	1.5V, 4.5V	1V @ 250µA	11.9 nC @ 4.5 V	1243 pF @ 4 V	±8V	-	860mW (Ta)	47mOhm @ 3.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3