Page 544 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFU3711PBF
Infineon Technologies

MOSFET N-CH 20V 100A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,912
IRLI2505
Infineon Technologies

MOSFET N-CH 55V 58A TO220FP

Package: TO-220-3 Full Pack

Stock87,912
AOB20C60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,624
SI7664DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

Package: PowerPAK? SO-8

Stock3,280
NDF06N62ZG
ON Semiconductor

MOSFET N-CH 620V 6A TO220FP

Package: TO-220-3 Full Pack

Stock7,168
PH3430AL,115
NXP

MOSFET N-CH 30V 100A LFPAK

Package: SC-100, SOT-669

Stock4,976
BUK754R3-40B,127
NXP

MOSFET N-CH 40V 75A TO220AB

Package: TO-220-3

Stock3,104
FQD3N30TF
Fairchild/ON Semiconductor

MOSFET N-CH 300V 2.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,440
ZVN0124ASTOA
Diodes Incorporated

MOSFET N-CH 240V 0.16A TO92-3

Package: E-Line-3

Stock22,404
NTD15N06T4
ON Semiconductor

MOSFET N-CH 60V 15A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,168
SPB16N50C3
Infineon Technologies

MOSFET N-CH 560V 16A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock390,000
IRF9410TRPBF
Infineon Technologies

MOSFET N-CH 30V 7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock975,432
IXFH18N60P
IXYS

MOSFET N-CH 600V 18A TO-247

Package: TO-247-3

Stock103,464
TPC8132,LQ(S
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 7A 8SOP

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,240
SIA477EDJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 12A SC-70-6L

Package: PowerPAK? SC-70-6

Stock5,184
FF1700XTR17IE5DBPSA1
Infineon Technologies

PP IHM I

Package: -

Stock6
AON6224A
Alpha & Omega Semiconductor Inc.

N

Package: -

Request a Quote
IPN80R3K3P7ATMA1
Infineon Technologies

MOSFET N-CH 800V 1.9A SOT223

Package: -

Stock40,086
NDS0610-PG
onsemi

MOSFET P-CH 60V SOT-23

Package: -

Request a Quote
IRFB4115PBFXKMA1
Infineon Technologies

TRENCH >=100V

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFU3711PBF	Infineon Technologies	MOSFET N-CH 20V 100A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,912	MOSFET (Metal Oxide)	20V	100A (Tc)	4.5V, 10V	3V @ 250µA	44nC @ 4.5V	2980pF @ 10V	±20V	-	2.5W (Ta), 120W (Tc)	6.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRLI2505	Infineon Technologies	MOSFET N-CH 55V 58A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock87,912	MOSFET (Metal Oxide)	55V	58A (Tc)	4V, 10V	2V @ 250µA	130nC @ 5V	5000pF @ 25V	±16V	-	63W (Tc)	8 mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
AOB20C60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 463W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,624	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	74nC @ 10V	3440pF @ 100V	±30V	-	463W (Tc)	250 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI7664DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 40A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock3,280	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	1.8V @ 250µA	125nC @ 10V	7770pF @ 15V	±12V	-	5.4W (Ta), 83W (Tc)	3.1 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
NDF06N62ZG	ON Semiconductor	MOSFET N-CH 620V 6A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 923pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,168	MOSFET (Metal Oxide)	620V	6A (Tc)	10V	4.5V @ 100µA	32nC @ 10V	923pF @ 25V	±30V	-	31W (Tc)	1.2 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
PH3430AL,115	NXP	MOSFET N-CH 30V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 12V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 15A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock4,976	MOSFET (Metal Oxide)	30V	100A (Tc)	-	2.15V @ 1mA	41nC @ 10V	2458pF @ 12V	-	-	-	3.5 mOhm @ 15A, 10V	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BUK754R3-40B,127	NXP	MOSFET N-CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4824pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 254W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,104	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	69nC @ 10V	4824pF @ 25V	±20V	-	254W (Tc)	4.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQD3N30TF	Fairchild/ON Semiconductor	MOSFET N-CH 300V 2.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,440	MOSFET (Metal Oxide)	300V	2.4A (Tc)	10V	5V @ 250µA	7nC @ 10V	230pF @ 25V	±30V	-	2.5W (Ta), 30W (Tc)	2.2 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
ZVN0124ASTOA	Diodes Incorporated	MOSFET N-CH 240V 0.16A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 16 Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock22,404	MOSFET (Metal Oxide)	240V	160mA (Ta)	10V	3V @ 1mA	-	85pF @ 25V	±20V	-	700mW (Ta)	16 Ohm @ 250mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
NTD15N06T4	ON Semiconductor	MOSFET N-CH 60V 15A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,168	MOSFET (Metal Oxide)	60V	15A (Ta)	10V	4V @ 250µA	20nC @ 10V	450pF @ 25V	±20V	-	1.5W (Ta), 48W (Tj)	90 mOhm @ 7.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPB16N50C3	Infineon Technologies	MOSFET N-CH 560V 16A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 675µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,000	MOSFET (Metal Oxide)	560V	16A (Tc)	10V	3.9V @ 675µA	66nC @ 10V	1600pF @ 25V	±20V	-	160W (Tc)	280 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9410TRPBF	Infineon Technologies	MOSFET N-CH 30V 7A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock975,432	MOSFET (Metal Oxide)	30V	7A (Ta)	4.5V, 10V	1V @ 250µA	27nC @ 10V	550pF @ 25V	±20V	-	2.5W (Ta)	30 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IXFH18N60P	IXYS	MOSFET N-CH 600V 18A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	5.5V @ 2.5mA	50nC @ 10V	2500pF @ 25V	±30V	-	360W (Tc)	400 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
TPC8132,LQ(S	Toshiba Semiconductor and Storage	MOSFET P-CH 40V 7A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 10V Vgs (Max): +20V, -25V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,240	MOSFET (Metal Oxide)	40V	7A (Ta)	4.5V, 10V	2V @ 200µA	34nC @ 10V	1580pF @ 10V	+20V, -25V	-	1W (Ta)	25 mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
SIA477EDJ-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V 12A SC-70-6L FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 6V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 14 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	Package: PowerPAK? SC-70-6	Stock5,184	MOSFET (Metal Oxide)	12V	12A (Tc)	-	1V @ 250µA	87nC @ 8V	2970pF @ 6V	-	-	-	14 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Single	PowerPAK? SC-70-6
FF1700XTR17IE5DBPSA1	Infineon Technologies	PP IHM I FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AON6224A	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2305 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 16W (Ta), 56.5W (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	16A (Ta), 34A (Tc)	4.5V, 10V	2.5V @ 250µA	50 nC @ 10 V	2305 pF @ 50 V	±20V	-	16W (Ta), 56.5W (Tc)	11.6mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
IPN80R3K3P7ATMA1	Infineon Technologies	MOSFET N-CH 800V 1.9A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.1W (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock40,086	MOSFET (Metal Oxide)	800 V	1.9A (Tc)	10V	3.5V @ 30µA	5.8 nC @ 10 V	120 pF @ 500 V	±20V	-	6.1W (Tc)	3.3Ohm @ 590mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223	TO-261-4, TO-261AA
NDS0610-PG	onsemi	MOSFET P-CH 60V SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	120mA (Ta)	4.5V, 10V	3.5V @ 1mA	2.5 nC @ 10 V	79 pF @ 25 V	±20V	-	360mW (Ta)	10Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IRFB4115PBFXKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 62A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	104A (Tc)	10V	5V @ 250µA	120 nC @ 10 V	5270 pF @ 50 V	±20V	-	380W (Tc)	11mOhm @ 62A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTA3N100P-TRL	IXYS	MOSFET N-CH 1000V 3A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	3A (Tc)	10V	4.5V @ 250µA	36 nC @ 10 V	1100 pF @ 25 V	±20V	-	125W (Tc)	4.8Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NVTFWS008N04CTAG	onsemi	MOSFET N-CH 40V 14A/48A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Stock4,500	MOSFET (Metal Oxide)	40 V	14A (Ta), 48A (Tc)	10V	3.5V @ 30µA	10 nC @ 10 V	625 pF @ 25 V	±20V	-	3.1W (Ta), 38W (Tc)	8.5mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-WDFN (3.3x3.3)	8-PowerWDFN
IXFH46N65X3	IXYS	MOSFET 46A 650V X3 TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.2V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 73mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFH) Package / Case: TO-247-3	Package: -	Stock1,056	MOSFET (Metal Oxide)	650 V	46A (Tc)	10V	5.2V @ 2.5mA	40 nC @ 10 V	2730 pF @ 25 V	±20V	-	520W (Tc)	73mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFH)	TO-247-3
NDP4050	Fairchild Semiconductor	NDP4050 - 15A, 50V, 0.1OHM, N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	15A (Tc)	-	4V @ 250µA	17 nC @ 10 V	450 pF @ 25 V	-	-	-	100mOhm @ 7.5A, 10V	-	Through Hole	TO-220-3	TO-220-3
UPA2806T1L-E1-AY	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
G050P03T	Goford Semiconductor	MOSFET P-CH 30V 85A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	-	85A (Tc)	4.5V, 10V	2.5V @ 250µA	-	-	±20V	-	100W (Tc)	5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IXFP14N55X2M	IXYS	IXFP14N55X2M FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK190E65Z-S1X	Toshiba Semiconductor and Storage	650V DTMOS VI TO-220 190MOHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 610µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock363	MOSFET (Metal Oxide)	650 V	15A (Ta)	10V	4V @ 610µA	25 nC @ 10 V	1370 pF @ 300 V	±30V	-	130W (Tc)	190mOhm @ 7.5A, 10V	150°C	Through Hole	TO-220	TO-220-3