Page 549 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

GP2M004A060HG
Global Power Technologies Group

MOSFET N-CH 600V 4A TO220

Package: TO-220-3

Stock5,888
AUIRF5210STRL
Infineon Technologies

MOSFET P-CH 100V 38A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,320
IRF7470PBF
Infineon Technologies

MOSFET N-CH 40V 10A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,904
IRFR4105ZPBF
Infineon Technologies

MOSFET N-CH 55V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,552
BSC084P03NS3EGATMA1
Infineon Technologies

MOSFET P-CH 30V 14.9A TDSON-8

Package: 8-PowerTDFN

Stock2,336
IXFH170N10P
IXYS

MOSFET N-CH 100V 170A TO-247

Package: TO-247-3

Stock432,324
GA05JT12-247
GeneSiC Semiconductor

TRANS SJT 1200V 5A

Package: TO-247-3

Stock4,432
FCMT099N65S3
Fairchild/ON Semiconductor

PQFN88 PKG, 99MOHM, 650V, SUPERF

Package: -

Stock7,280
AOTF10T60PL
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 10A TO-220

Package: TO-220-3 Full Pack

Stock3,104
AON6758
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 32A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock1,052,868
IXFP20N50P3
IXYS

MOSFET N-CH 500V 8A TO220

Package: TO-220-3

Stock6,096
TK8A60W5,S5VX
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 8A TO-220SIS

Package: TO-220-3 Full Pack, Isolated Tab

Stock6,084
IPT60R102G7XTMA1
Infineon Technologies

MOSFET N-CH 650V 23A HSOF-8

Package: 8-PowerSFN

Stock7,584
IRFP340PBF
Vishay Siliconix

MOSFET N-CH 400V 11A TO-247AC

Package: TO-247-3

Stock18,036
BSS84PWH6327XTSA1
Infineon Technologies

MOSFET P-CH 60V 150MA SOT-323

Package: SC-70, SOT-323

Stock216,012
IRF8301MTRPBF
Infineon Technologies

MOSFET N-CH 30V 27A DIRECTFET MT

Package: DirectFET? Isometric MT

Stock33,324
FDPF8N50NZU
Fairchild/ON Semiconductor

MOSFET N-CH 500V 6.5A TO-220F

Package: TO-220-3 Full Pack

Stock12,600
IXFK140N30P
IXYS

MOSFET N-CH 300V 140A TO-264

Package: TO-264-3, TO-264AA

Stock4,912
DMP2305U-7
Diodes Incorporated

MOSFET P-CH 20V 4.2A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock4,333,176
R6077VNZC17
Rohm Semiconductor

600V 29A TO-3PF, PRESTOMOS WITH

Package: -

Stock1,260

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
GP2M004A060HG	Global Power Technologies Group	MOSFET N-CH 600V 4A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 86.2W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,888	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	5V @ 250µA	12nC @ 10V	545pF @ 25V	±30V	-	86.2W (Tc)	2.5 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
AUIRF5210STRL	Infineon Technologies	MOSFET P-CH 100V 38A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,320	MOSFET (Metal Oxide)	100V	38A (Tc)	10V	4V @ 250µA	230nC @ 10V	2780pF @ 25V	±20V	-	3.1W (Ta), 170W (Tc)	60 mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF7470PBF	Infineon Technologies	MOSFET N-CH 40V 10A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 20V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,904	MOSFET (Metal Oxide)	40V	10A (Ta)	2.8V, 10V	2V @ 250µA	44nC @ 4.5V	3430pF @ 20V	±12V	-	2.5W (Ta)	13 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFR4105ZPBF	Infineon Technologies	MOSFET N-CH 55V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,552	MOSFET (Metal Oxide)	55V	30A (Tc)	10V	4V @ 250µA	27nC @ 10V	740pF @ 25V	±20V	-	48W (Tc)	24.5 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSC084P03NS3EGATMA1	Infineon Technologies	MOSFET P-CH 30V 14.9A TDSON-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 57.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4240pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,336	MOSFET (Metal Oxide)	30V	14.9A (Ta), 78.6A (Tc)	6V, 10V	3V @ 110µA	57.7nC @ 10V	4240pF @ 15V	±25V	-	2.5W (Ta), 69W (Tc)	8.4 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IXFH170N10P	IXYS	MOSFET N-CH 100V 170A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 715W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock432,324	MOSFET (Metal Oxide)	100V	170A (Tc)	10V	5V @ 4mA	198nC @ 10V	6000pF @ 25V	±20V	-	715W (Tc)	9 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
GA05JT12-247	GeneSiC Semiconductor	TRANS SJT 1200V 5A FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 5A Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	Package: TO-247-3	Stock4,432	SiC (Silicon Carbide Junction Transistor)	1200V	5A (Tc)	-	-	-	-	-	-	106W (Tc)	280 mOhm @ 5A	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
FCMT099N65S3	Fairchild/ON Semiconductor	PQFN88 PKG, 99MOHM, 650V, SUPERF FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,280	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOTF10T60PL	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,104	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	5V @ 250µA	40nC @ 10V	1595pF @ 100V	±30V	-	33W (Tc)	700 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
AON6758	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 32A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 4.1W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock1,052,868	MOSFET (Metal Oxide)	30V	27A (Ta), 32A (Tc)	4.5V, 10V	2.4V @ 250µA	40nC @ 10V	1975pF @ 15V	±20V	Schottky Diode (Body)	4.1W (Ta), 41W (Tc)	3.6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
IXFP20N50P3	IXYS	MOSFET N-CH 500V 8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,096	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	5V @ 1.5mA	36nC @ 10V	1800pF @ 25V	±30V	-	380W (Tc)	300 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
TK8A60W5,S5VX	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 8A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,084	MOSFET (Metal Oxide)	600V	8A (Ta)	10V	4.5V @ 400µA	22nC @ 10V	590pF @ 300V	±30V	-	30W (Tc)	540 mOhm @ 4A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack, Isolated Tab
IPT60R102G7XTMA1	Infineon Technologies	MOSFET N-CH 650V 23A HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 141W (Tc) Rds On (Max) @ Id, Vgs: 102 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock7,584	MOSFET (Metal Oxide)	650V	23A (Tc)	10V	4V @ 390µA	34nC @ 10V	1320pF @ 400V	±20V	-	141W (Tc)	102 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8	8-PowerSFN
IRFP340PBF	Vishay Siliconix	MOSFET N-CH 400V 11A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock18,036	MOSFET (Metal Oxide)	400V	11A (Tc)	10V	4V @ 250µA	62nC @ 10V	1400pF @ 25V	±20V	-	150W (Tc)	550 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
BSS84PWH6327XTSA1	Infineon Technologies	MOSFET P-CH 60V 150MA SOT-323 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19.1pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock216,012	MOSFET (Metal Oxide)	60V	150mA (Ta)	4.5V, 10V	2V @ 20µA	1.5nC @ 10V	19.1pF @ 25V	±20V	-	300mW (Ta)	8 Ohm @ 150mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT323-3	SC-70, SOT-323
IRF8301MTRPBF	Infineon Technologies	MOSFET N-CH 30V 27A DIRECTFET MT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 192A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6140pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 32A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MT Package / Case: DirectFET? Isometric MT	Package: DirectFET? Isometric MT	Stock33,324	MOSFET (Metal Oxide)	30V	34A (Ta), 192A (Tc)	4.5V, 10V	2.35V @ 150µA	77nC @ 4.5V	6140pF @ 15V	±20V	-	2.8W (Ta), 89W (Tc)	1.5 mOhm @ 32A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MT	DirectFET? Isometric MT
FDPF8N50NZU	Fairchild/ON Semiconductor	MOSFET N-CH 500V 6.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock12,600	MOSFET (Metal Oxide)	500V	6.5A (Tc)	10V	5V @ 250µA	18nC @ 10V	735pF @ 25V	±25V	-	40W (Tc)	1.2 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IXFK140N30P	IXYS	MOSFET N-CH 300V 140A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,912	MOSFET (Metal Oxide)	300V	140A (Tc)	10V	5V @ 8mA	185nC @ 10V	14800pF @ 25V	±20V	-	1040W (Tc)	24 mOhm @ 70A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
DMP2305U-7	Diodes Incorporated	MOSFET P-CH 20V 4.2A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 727pF @ 20V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,333,176	MOSFET (Metal Oxide)	20V	4.2A (Ta)	1.8V, 4.5V	900mV @ 250µA	7.6nC @ 4.5V	727pF @ 20V	±8V	-	1.4W (Ta)	60 mOhm @ 4.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
R6077VNZC17	Rohm Semiconductor	600V 29A TO-3PF, PRESTOMOS WITH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 6.5V @ 1.9mA Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 113W (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Stock1,260	MOSFET (Metal Oxide)	600 V	29A (Tc)	10V, 15V	6.5V @ 1.9mA	108 nC @ 10 V	5200 pF @ 100 V	±30V	-	113W (Tc)	51mOhm @ 23A, 15V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
3LN04SS-TL-H	onsemi	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIR798DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 15 V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	130 nC @ 10 V	5050 pF @ 15 V	±20V	Schottky Diode (Body)	83W (Tc)	2.05mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
UF4C120070K3S	Qorvo	1200V/70MOHM, SIC, FAST CASCODE, FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 217W (Tc) Rds On (Max) @ Id, Vgs: 91mOhm @ 20A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock1,725	SiCFET (Cascode SiCJFET)	1200 V	27.5A (Tc)	-	6V @ 10mA	37.8 nC @ 15 V	1370 pF @ 800 V	±20V	-	217W (Tc)	91mOhm @ 20A, 12V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
R6524ENZ4C13	Rohm Semiconductor	650V 24A TO-247, LOW-NOISE POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247G Package / Case: TO-247-3	Package: -	Stock1,425	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	4V @ 750µA	70 nC @ 10 V	1650 pF @ 25 V	±20V	-	245W (Tc)	185mOhm @ 11.3A, 10V	150°C (TJ)	Through Hole	TO-247G	TO-247-3
NDCTR08120A	onsemi	MOSFET N-CH 1200V 8A SMD FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
C3M0060065D	Wolfspeed, Inc.	SICFET N-CH 650V 37A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.6V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V Vgs (Max): +15V, -4V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock2,121	SiCFET (Silicon Carbide)	650 V	37A (Tc)	15V	3.6V @ 5mA	46 nC @ 15 V	1020 pF @ 600 V	+15V, -4V	-	150W (Tc)	79mOhm @ 13.2A, 15V	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
2SJ329-05-S5-AZ	Renesas Electronics Corporation	P-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVMFS5C673NLAFT3G	onsemi	MOSFET N-CHANNEL 60V 50A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	50A (Tc)	4.5V, 10V	2V @ 35µA	9.5 nC @ 10 V	880 pF @ 25 V	±20V	-	46W (Tc)	9.2mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads