Page 587 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSS816NW L6327
Infineon Technologies

MOSFET N-CH 20V 1.4A SOT323

Package: SC-70, SOT-323

Stock3,648
IRF7842TR
Infineon Technologies

MOSFET N-CH 40V 18A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock72,000
IRLI540N
Infineon Technologies

MOSFET N-CH 100V 23A TO220FP

Package: TO-220-3 Full Pack

Stock6,624
BUK9875-100A,115
NXP

MOSFET N-CH 100V 7A SOT-223

Package: TO-261-4, TO-261AA

Stock6,768
NTMFS4921NT3G
ON Semiconductor

MOSFET N-CH 30V 8.8A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock12,864
NTD18N06-1G
ON Semiconductor

MOSFET N-CH 60V 18A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,576
IRCZ34PBF
Vishay Siliconix

MOSFET N-CH 60V 30A TO-220-5

Package: TO-220-5

Stock11,472
MTP3055V
ON Semiconductor

MOSFET N-CH 60V 12A TO-220AB

Package: TO-220-3

Stock3,440
IXTP56N15T
IXYS

MOSFET N-CH 150V 56A TO-220

Package: TO-220-3

Stock60,492
ZVN4210ASTZ
Diodes Incorporated

MOSFET N-CH 100V 450MA TO92-3

Package: E-Line-3

Stock24,000
IXTA08N50D2
IXYS

MOSFET N-CH 500V 800MA D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock17,376
PSMN013-30MLC,115
Nexperia USA Inc.

MOSFET N-CH 30V 39A LFPAK33

Package: SOT-1210, 8-LFPAK33 (5-Lead)

Stock2,144
STW26NM60ND
STMicroelectronics

MOSFET N-CH 600V 21A TO247

Package: TO-247-3

Stock6,936
IPP60R190P6
Infineon Technologies

MOSFET N-CH 600V 20.2A TO220

Package: TO-220-3

Stock4,224
IRFR13N20DTRPBF
Infineon Technologies

MOSFET N-CH 200V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock103,044
FS70KMJ-2-B00
Renesas Electronics Corporation

70A, 100V, N-CHANNEL MOSFET

Package: -

Request a Quote
MCAC100N04-TP
Micro Commercial Co

MOSFET

Package: -

Request a Quote
BSS123IXTMA1
Infineon Technologies

100V N-CH SMALL SIGNAL MOSFET IN

Package: -

Request a Quote
DMN10H170SFGQ-13
Diodes Incorporated

MOSFET N-CH 100V PWRDI3333

Package: -

Request a Quote
IRF644PBF-BE3
Vishay Siliconix

MOSFET N-CH 250V 14A TO220AB

Package: -

Stock2,904

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSS816NW L6327	Infineon Technologies	MOSFET N-CH 20V 1.4A SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Vgs(th) (Max) @ Id: 750mV @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 2.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock3,648	MOSFET (Metal Oxide)	20V	1.4A (Ta)	1.8V, 2.5V	750mV @ 3.7µA	0.6nC @ 2.5V	180pF @ 10V	±8V	-	500mW (Ta)	160 mOhm @ 1.4A, 2.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT323-3	SC-70, SOT-323
IRF7842TR	Infineon Technologies	MOSFET N-CH 40V 18A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock72,000	MOSFET (Metal Oxide)	40V	18A (Ta)	4.5V, 10V	2.25V @ 250µA	50nC @ 4.5V	4500pF @ 20V	±20V	-	2.5W (Ta)	5 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRLI540N	Infineon Technologies	MOSFET N-CH 100V 23A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 44 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,624	MOSFET (Metal Oxide)	100V	23A (Tc)	4V, 10V	2V @ 250µA	74nC @ 5V	1800pF @ 25V	±16V	-	54W (Tc)	44 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
BUK9875-100A,115	NXP	MOSFET N-CH 100V 7A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 8W (Tc) Rds On (Max) @ Id, Vgs: 72 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock6,768	MOSFET (Metal Oxide)	100V	7A (Tc)	4.5V, 10V	2V @ 1mA	-	1690pF @ 25V	±10V	-	8W (Tc)	72 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
NTMFS4921NT3G	ON Semiconductor	MOSFET N-CH 30V 8.8A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 58.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 870mW (Ta), 38.5W (Tc) Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock12,864	MOSFET (Metal Oxide)	30V	8.8A (Ta), 58.5A (Tc)	4.5V, 11.5V	2.5V @ 250µA	25nC @ 11.5V	1400pF @ 12V	±20V	-	870mW (Ta), 38.5W (Tc)	6.95 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTD18N06-1G	ON Semiconductor	MOSFET N-CH 60V 18A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 55W (Tj) Rds On (Max) @ Id, Vgs: 60 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,576	MOSFET (Metal Oxide)	60V	18A (Ta)	10V	4V @ 250µA	30nC @ 10V	710pF @ 25V	±20V	-	2.1W (Ta), 55W (Tj)	60 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRCZ34PBF	Vishay Siliconix	MOSFET N-CH 60V 30A TO-220-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: Current Sensing Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	Package: TO-220-5	Stock11,472	MOSFET (Metal Oxide)	60V	30A (Tc)	10V	4V @ 250µA	46nC @ 10V	1300pF @ 25V	±20V	Current Sensing	88W (Tc)	50 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-5	TO-220-5
MTP3055V	ON Semiconductor	MOSFET N-CH 60V 12A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,440	MOSFET (Metal Oxide)	60V	12A (Tc)	10V	4V @ 250µA	17nC @ 10V	500pF @ 25V	±20V	-	48W (Tc)	150 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP56N15T	IXYS	MOSFET N-CH 150V 56A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock60,492	MOSFET (Metal Oxide)	150V	56A (Tc)	10V	4.5V @ 250µA	34nC @ 10V	2250pF @ 25V	±30V	-	300W (Tc)	36 mOhm @ 28A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
ZVN4210ASTZ	Diodes Incorporated	MOSFET N-CH 100V 450MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock24,000	MOSFET (Metal Oxide)	100V	450mA (Ta)	5V, 10V	2.4V @ 1mA	-	100pF @ 25V	±20V	-	700mW (Ta)	1.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
IXTA08N50D2	IXYS	MOSFET N-CH 500V 800MA D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 312pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 4.6 Ohm @ 400mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock17,376	MOSFET (Metal Oxide)	500V	800mA (Tc)	-	-	12.7nC @ 5V	312pF @ 25V	±20V	Depletion Mode	60W (Tc)	4.6 Ohm @ 400mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN013-30MLC,115	Nexperia USA Inc.	MOSFET N-CH 30V 39A LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 519pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: SOT-1210, 8-LFPAK33 (5-Lead)	Stock2,144	MOSFET (Metal Oxide)	30V	39A (Tc)	4.5V, 10V	1.95V @ 1mA	8nC @ 10V	519pF @ 15V	±20V	-	38W (Tc)	13.6 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
STW26NM60ND	STMicroelectronics	MOSFET N-CH 600V 21A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1817pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 10.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,936	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	5V @ 250µA	54.6nC @ 10V	1817pF @ 100V	±25V	-	190W (Tc)	175 mOhm @ 10.5A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
IPP60R190P6	Infineon Technologies	MOSFET N-CH 600V 20.2A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 630µ Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,224	MOSFET (Metal Oxide)	600V	20.2A (Tc)	10V	4.5V @ 630µ	11nC @ 10V	1750pF @ 100V	±20V	-	151W (Tc)	190 mOhm @ 7.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IRFR13N20DTRPBF	Infineon Technologies	MOSFET N-CH 200V 13A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock103,044	MOSFET (Metal Oxide)	200V	13A (Tc)	10V	5.5V @ 250µA	38nC @ 10V	830pF @ 25V	±30V	-	110W (Tc)	235 mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FS70KMJ-2-B00	Renesas Electronics Corporation	70A, 100V, N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCAC100N04-TP	Micro Commercial Co	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	100A (Tc)	6V, 10V	2.5V @ 250µA	93 nC @ 10 V	4165 pF @ 25 V	±20V	-	75W (Tj)	3.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
BSS123IXTMA1	Infineon Technologies	100V N-CH SMALL SIGNAL MOSFET IN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3-5 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	190mA (Ta)	4.5V, 10V	1.8V @ 13µA	0.63 nC @ 10 V	15 pF @ 50 V	±20V	-	500mW (Ta)	6Ohm @ 190mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3-5	TO-236-3, SC-59, SOT-23-3
DMN10H170SFGQ-13	Diodes Incorporated	MOSFET N-CH 100V PWRDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 940mW (Ta) Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	2.9A (Ta), 8.5A (Tc)	4.5V, 10V	3V @ 250µA	14.9 nC @ 10 V	870.7 pF @ 25 V	±20V	-	940mW (Ta)	122mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
IRF644PBF-BE3	Vishay Siliconix	MOSFET N-CH 250V 14A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock2,904	MOSFET (Metal Oxide)	250 V	14A (Tc)	-	4V @ 250µA	68 nC @ 10 V	1300 pF @ 25 V	±20V	-	125W (Tc)	280mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
FSS248-TL-E-SY	Sanyo	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
XPJR6604PB-LXHQ	Toshiba Semiconductor and Storage	40V; UMOS9; 0.66MOHM; S-TOGL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: S-TOGL™ Package / Case: 5-PowerSFN	Package: -	Stock8,571	MOSFET (Metal Oxide)	40 V	200A (Ta)	6V, 10V	3V @ 1mA	128 nC @ 10 V	11380 pF @ 10 V	±20V	-	375W (Tc)	0.66mOhm @ 100A, 10V	175°C	Surface Mount	S-TOGL™	5-PowerSFN
SIHB15N80AE-GE3	Vishay Siliconix	MOSFET N-CH 800V 13A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1093 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock1,170	MOSFET (Metal Oxide)	800 V	13A (Tc)	10V	4V @ 250µA	53 nC @ 10 V	1093 pF @ 100 V	±30V	-	156W (Tc)	350mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHH186N60EF-T1GE3	Vishay Siliconix	MOSFET N-CH 600V 16A PPAK 8 X 8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	Package: -	Stock18,045	MOSFET (Metal Oxide)	600 V	16A (Tc)	10V	5V @ 250µA	32 nC @ 10 V	1081 pF @ 100 V	±30V	-	114W (Tc)	193mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 8 x 8	8-PowerTDFN
MTB10N40ET4	onsemi	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	400 V	10A (Tc)	10V	4V @ 250µA	63 nC @ 10 V	2200 pF @ 25 V	±20V	-	2.5W (Ta), 125W (Tc)	550mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STS2305A-ML	MOSLEADER	Single-P -20V -3.3A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DI005P04PW-AQ	Diotec Semiconductor	IC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 20 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-QFN (2x2) Package / Case: 6-PowerUDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	5.4A (Ta)	4.5V, 10V	2.5V @ 250µA	19 nC @ 10 V	1078 pF @ 20 V	±12V	-	2W (Ta)	40mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-QFN (2x2)	6-PowerUDFN
FCB20N60F-F085	onsemi	MOSFET N-CH 600V 20A TO263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 405W (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	5V @ 250µA	102 nC @ 10 V	2035 pF @ 25 V	±30V	-	405W (Tc)	195mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB