Page 608 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IXFN48N50U2
IXYS

MOSFET N-CH 500V 48A SOT-227B

Package: SOT-227-4, miniBLOC

Stock3,488
BS170RLRPG
ON Semiconductor

MOSFET N-CH 60V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock6,672
HUFA76619D3S
Fairchild/ON Semiconductor

MOSFET N-CH 100V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock60,612
FQP19N10L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 19A TO-220

Package: TO-220-3

Stock16,440
IRL7833SPBF
Infineon Technologies

MOSFET N-CH 30V 150A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,008
IXFR27N80Q
IXYS

MOSFET N-CH 800V 27A ISOPLUS247

Package: ISOPLUS247?

Stock3,696
IXTK140N30P
IXYS

MOSFET N-CH 300V 140A TO-264

Package: TO-264-3, TO-264AA

Stock5,184
SI7868ADP-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 40A PPAK SO-8

Package: PowerPAK? SO-8

Stock16,476
IXTU08N100P
IXYS

MOSFET N-CH 1000V 8A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,264
CSD19535KTT
Texas Instruments

MOSFET N-CH 100V 200A TO263

Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Stock3,408
FKI07174
Sanken

MOSFET N-CH 75V 31A TO-220F

Package: TO-220-3 Full Pack

Stock6,160
AOT264L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 19A TO220

Package: TO-220-3

Stock9,192
NVMFS5C404NT1G
ON Semiconductor

MOSFET N-CH 40V 49A SO8FL

Package: 8-PowerTDFN

Stock4,032
STB60NF10-1
STMicroelectronics

MOSFET N-CH 100V 80A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock168,684
ZDX080N50
Rohm Semiconductor

MOSFET N-CH 500V 8A TO220FM

Package: TO-220-2 Full Pack

Stock8,748
FQD10N20LTM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 7.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock30,000
IRFI540NPBF
Infineon Technologies

MOSFET N-CH 100V 20A TO220FP

Package: TO-220-3 Full Pack

Stock16,632
IRFR1018ETRPBF
Infineon Technologies

MOSFET N-CH 60V 56A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock189,192
STW77N65M5
STMicroelectronics

MOSFET N-CH 650V 69A TO-247

Package: TO-247-3

Stock428,376
IXTT11P50-TRL
IXYS

MOSFET P-CH 500V 11A TO268

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFN48N50U2	IXYS	MOSFET N-CH 500V 48A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 48A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,488	MOSFET (Metal Oxide)	500V	48A	10V	4V @ 8mA	270nC @ 10V	8400pF @ 25V	±20V	-	520W (Tc)	100 mOhm @ 500mA, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
BS170RLRPG	ON Semiconductor	MOSFET N-CH 60V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock6,672	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	60pF @ 10V	±20V	-	350mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
HUFA76619D3S	Fairchild/ON Semiconductor	MOSFET N-CH 100V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock60,612	MOSFET (Metal Oxide)	100V	18A (Tc)	4.5V, 10V	3V @ 250µA	29nC @ 10V	767pF @ 25V	±16V	-	75W (Tc)	85 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FQP19N10L	Fairchild/ON Semiconductor	MOSFET N-CH 100V 19A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock16,440	MOSFET (Metal Oxide)	100V	19A (Tc)	5V, 10V	2V @ 250µA	18nC @ 5V	870pF @ 25V	±20V	-	75W (Tc)	100 mOhm @ 9.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IRL7833SPBF	Infineon Technologies	MOSFET N-CH 30V 150A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4170pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,008	MOSFET (Metal Oxide)	30V	150A (Tc)	4.5V, 10V	2.3V @ 250µA	47nC @ 4.5V	4170pF @ 15V	±20V	-	140W (Tc)	3.8 mOhm @ 38A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFR27N80Q	IXYS	MOSFET N-CH 800V 27A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock3,696	MOSFET (Metal Oxide)	800V	27A (Tc)	10V	4.5V @ 4mA	170nC @ 10V	7600pF @ 25V	±20V	-	500W (Tc)	300 mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXTK140N30P	IXYS	MOSFET N-CH 300V 140A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 24 mOhm @ 70A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock5,184	MOSFET (Metal Oxide)	300V	140A (Tc)	10V	5V @ 500µA	185nC @ 10V	14800pF @ 25V	±20V	-	-	24 mOhm @ 70A, 10V	-	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
SI7868ADP-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 40A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6110pF @ 10V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.25 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock16,476	MOSFET (Metal Oxide)	20V	40A (Tc)	4.5V, 10V	1.6V @ 250µA	150nC @ 10V	6110pF @ 10V	±16V	-	5.4W (Ta), 83W (Tc)	2.25 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IXTU08N100P	IXYS	MOSFET N-CH 1000V 8A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,264	MOSFET (Metal Oxide)	1000V	8A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
CSD19535KTT	Texas Instruments	MOSFET N-CH 100V 200A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7930pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DDPAK/TO-263-3 Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Stock3,408	MOSFET (Metal Oxide)	100V	200A (Ta)	6V, 10V	3.4V @ 250µA	98nC @ 10V	7930pF @ 50V	±20V	-	300W (Tc)	3.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DDPAK/TO-263-3	TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
FKI07174	Sanken	MOSFET N-CH 75V 31A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 650µA Gate Charge (Qg) (Max) @ Vgs: 36.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 22.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,160	MOSFET (Metal Oxide)	75V	31A (Tc)	4.5V, 10V	2.5V @ 650µA	36.2nC @ 10V	2520pF @ 25V	±20V	-	38W (Tc)	13.6 mOhm @ 22.8A, 10V	150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
AOT264L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 19A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock9,192	MOSFET (Metal Oxide)	60V	19A (Ta), 140A (Tc)	6V, 10V	3.2V @ 250µA	94nC @ 10V	8400pF @ 30V	±20V	-	2.1W (Ta), 333W (Tc)	3.2 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
NVMFS5C404NT1G	ON Semiconductor	MOSFET N-CH 40V 49A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,032	MOSFET (Metal Oxide)	40V	-	10V	4V @ 250µA	128nC @ 10V	8400pF @ 25V	±20V	-	3.9W (Ta), 200W (Tc)	0.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
STB60NF10-1	STMicroelectronics	MOSFET N-CH 100V 80A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock168,684	MOSFET (Metal Oxide)	100V	80A (Tc)	10V	4V @ 250µA	104nC @ 10V	4270pF @ 25V	±20V	-	300W (Tc)	23 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
ZDX080N50	Rohm Semiconductor	MOSFET N-CH 500V 8A TO220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock8,748	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	4V @ 1mA	23nC @ 10V	1120pF @ 25V	±30V	-	40W (Tc)	850 mOhm @ 4A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
FQD10N20LTM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 7.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 51W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock30,000	MOSFET (Metal Oxide)	200V	7.6A (Tc)	5V, 10V	2V @ 250µA	17nC @ 5V	830pF @ 25V	±20V	-	2.5W (Ta), 51W (Tc)	360 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFI540NPBF	Infineon Technologies	MOSFET N-CH 100V 20A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock16,632	MOSFET (Metal Oxide)	100V	20A (Tc)	10V	4V @ 250µA	94nC @ 10V	1400pF @ 25V	±20V	-	54W (Tc)	52 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRFR1018ETRPBF	Infineon Technologies	MOSFET N-CH 60V 56A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock189,192	MOSFET (Metal Oxide)	60V	56A (Tc)	10V	4V @ 100µA	69nC @ 10V	2290pF @ 50V	±20V	-	110W (Tc)	8.4 mOhm @ 47A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STW77N65M5	STMicroelectronics	MOSFET N-CH 650V 69A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 100V Vgs (Max): 25V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 38 mOhm @ 34.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock428,376	MOSFET (Metal Oxide)	650V	69A (Tc)	10V	5V @ 250µA	200nC @ 10V	9800pF @ 100V	25V	-	400W (Tc)	38 mOhm @ 34.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXTT11P50-TRL	IXYS	MOSFET P-CH 500V 11A TO268 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	11A (Tc)	10V	5V @ 250µA	130 nC @ 10 V	4700 pF @ 25 V	±20V	-	300W (Tc)	750mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
FMD15-06KC5-PT	IXYS	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC™ Package / Case: ISOPLUSi5-PAK™	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	15A (Tc)	10V	3.5V @ 790µA	52 nC @ 10 V	2000 pF @ 100 V	±20V	-	-	165mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS i4-PAC™	ISOPLUSi5-PAK™
IPB65R225C7ATMA2	Infineon Technologies	MOSFET N-CH 650V 11A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	4V @ 240µA	20 nC @ 10 V	996 pF @ 400 V	±20V	-	63W (Tc)	225mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TSM60NC620CP-ROG	Taiwan Semiconductor Corporation	600V, 7A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 300 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock15,000	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	5V @ 1mA	15 nC @ 10 V	498 pF @ 300 V	±20V	-	78W (Tc)	620mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMN24H11DSQ-7	Diodes Incorporated	MOSFET N-CH 240V 270MA SOT23 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240 V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 76.8 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 11Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock13,890	MOSFET (Metal Oxide)	240 V	270mA (Ta)	4.5V, 10V	3V @ 250µA	3.7 nC @ 10 V	76.8 pF @ 25 V	±20V	-	750mW (Ta)	11Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
NTBL082N65S3HF	onsemi	NTBL082N65S3HF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HPSOF Package / Case: 8-PowerSFN	Package: -	Stock5,976	MOSFET (Metal Oxide)	650 V	40A (Tc)	10V	5V @ 1mA	79 nC @ 10 V	3330 pF @ 400 V	±30V	-	313W (Tc)	82mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-HPSOF	8-PowerSFN
UPA2730TP-E2-AZ	Renesas	UPA2730 - POWER FIELD-EFFECT TRA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 7.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerSOIC (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	20A (Ta), 42A (Tc)	4V, 10V	2.5V @ 1mA	97 nC @ 10 V	4670 pF @ 10 V	±20V	-	3W (Ta), 40W (Tc)	7mOhm @ 7.5A, 10V	150°C	Surface Mount	8-HSOP	8-PowerSOIC (0.173", 4.40mm Width)
SQD25N15-52-T4_GE3	Vishay Siliconix	MOSFET N-CH 150V 25A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	25A (Tc)	10V	4V @ 250µA	51 nC @ 10 V	2200 pF @ 25 V	±20V	-	107W (Tc)	52mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IMBG120R220M1HXTMA1	Infineon Technologies	SICFET N-CH 1.2KV 13A TO263 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5.7V @ 1.6mA Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V Vgs (Max): +18V, -15V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	13A (Tc)	-	5.7V @ 1.6mA	9.4 nC @ 18 V	312 pF @ 800 V	+18V, -15V	-	83W (Tc)	294mOhm @ 4A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA