Page 613 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPP100P03P3L-04
Infineon Technologies

MOSFET P-CH 30V 100A TO220-3

Package: TO-220-3

Stock3,456
IRL2505STRRPBF
Infineon Technologies

MOSFET N-CH 55V 104A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock32,400
SPP80N04S2-H4
Infineon Technologies

MOSFET N-CH 40V 80A TO-220

Package: TO-220-3

Stock14,868
AO4419_003
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 9.7A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,440
SUP70N03-09BP-E3
Vishay Siliconix

MOSFET N-CH 30V 70A TO220AB

Package: TO-220-3

Stock7,872
AOT1100L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 8A TO220

Package: TO-220-3

Stock9,456
SI3457BDV-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 3.7A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock438,480
NTB5405NG
ON Semiconductor

MOSFET N-CH 40V 116A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock12,552
SIPC19N80C3X1SA1
Infineon Technologies

TRANSISTOR N-CH

Package: -

Stock5,728
IXTK160N20
IXYS

MOSFET N-CH 200V 160A TO-264

Package: TO-264-3, TO-264AA

Stock5,136
STP17NK40Z
STMicroelectronics

MOSFET N-CH 400V 15A TO-220

Package: TO-220-3

Stock4,624
STPLED524
STMicroelectronics

MOSFET N-CH 525V 4A TO-220

Package: TO-220-3

Stock4,240
STP5NK52ZD
STMicroelectronics

MOSFET N-CH 520V 4.4A TO-220

Package: TO-220-3

Stock6,800
IRFP4668PBF
Infineon Technologies

MOSFET N-CH 200V 130A TO-247AC

Package: TO-247-3

Stock142,968
IRLZ24PBF
Vishay Siliconix

MOSFET N-CH 60V 17A TO-220AB

Package: TO-220-3

Stock109,200
GSFD1028
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 28A, 100V,

Package: -

Stock7,500
IPD60R170CFD7ATMA1
Infineon Technologies

MOSFET N-CH 600V 14A TO252-3

Package: -

Request a Quote
2SK1460LS
Sanyo

N-CHANNEL SILICON MOSFET

Package: -

Request a Quote
TK2R4A08QM-S4X
Toshiba Semiconductor and Storage

UMOS10 TO-220SIS 80V 2.4MOHM

Package: -

Stock240
NTMFS5C426NLT1G
onsemi

SINGLE N-CHANNEL POWER MOSFET 40

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPP100P03P3L-04	Infineon Technologies	MOSFET P-CH 30V 100A TO220-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 475µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9300pF @ 25V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock3,456	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	2.1V @ 475µA	200nC @ 10V	9300pF @ 25V	+5V, -16V	-	200W (Tc)	4.3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRL2505STRRPBF	Infineon Technologies	MOSFET N-CH 55V 104A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 54A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock32,400	MOSFET (Metal Oxide)	55V	104A (Tc)	4V, 10V	2V @ 250µA	130nC @ 5V	5000pF @ 25V	±16V	-	3.8W (Ta), 200W (Tc)	8 mOhm @ 54A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPP80N04S2-H4	Infineon Technologies	MOSFET N-CH 40V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock14,868	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	148nC @ 10V	5890pF @ 25V	±20V	-	300W (Tc)	4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
AO4419_003	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 9.7A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,440	MOSFET (Metal Oxide)	30V	9.7A (Ta)	4.5V, 10V	2.7V @ 250µA	32nC @ 10V	1900pF @ 15V	±20V	-	3.1W (Ta)	20 mOhm @ 9.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SUP70N03-09BP-E3	Vishay Siliconix	MOSFET N-CH 30V 70A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,872	MOSFET (Metal Oxide)	30V	70A (Tc)	4.5V, 10V	2V @ 250µA	19nC @ 5V	1500pF @ 25V	±20V	-	93W (Tc)	9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AOT1100L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4833pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 500W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock9,456	MOSFET (Metal Oxide)	100V	8A (Ta), 130A (Tc)	10V	3.8V @ 250µA	100nC @ 10V	4833pF @ 25V	±20V	-	2.1W (Ta), 500W (Tc)	12 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
SI3457BDV-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 3.7A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock438,480	MOSFET (Metal Oxide)	30V	3.7A (Ta)	4.5V, 10V	3V @ 250µA	19nC @ 10V	-	±20V	-	1.14W (Ta)	54 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
NTB5405NG	ON Semiconductor	MOSFET N-CH 40V 116A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 32V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,552	MOSFET (Metal Oxide)	40V	116A (Tc)	5V, 10V	3.5V @ 250µA	88nC @ 10V	4000pF @ 32V	±20V	-	3W (Ta), 150W (Tc)	5.8 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIPC19N80C3X1SA1	Infineon Technologies	TRANSISTOR N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,728	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTK160N20	IXYS	MOSFET N-CH 200V 160A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 415nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 730W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock5,136	MOSFET (Metal Oxide)	200V	160A (Tc)	10V	4V @ 250µA	415nC @ 10V	12900pF @ 25V	±20V	-	730W (Tc)	13 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
STP17NK40Z	STMicroelectronics	MOSFET N-CH 400V 15A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,624	MOSFET (Metal Oxide)	400V	15A (Tc)	10V	4.5V @ 100µA	65nC @ 10V	1900pF @ 25V	±30V	-	150W (Tc)	250 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STPLED524	STMicroelectronics	MOSFET N-CH 525V 4A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock4,240	MOSFET (Metal Oxide)	525V	4A (Tc)	10V	4.5V @ 50µA	12nC @ 10V	340pF @ 100V	±30V	-	45W (Tc)	2.6 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STP5NK52ZD	STMicroelectronics	MOSFET N-CH 520V 4.4A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 520V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 16.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,800	MOSFET (Metal Oxide)	520V	4.4A (Tc)	10V	4.5V @ 50µA	16.9nC @ 10V	529pF @ 25V	±30V	-	25W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFP4668PBF	Infineon Technologies	MOSFET N-CH 200V 130A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 241nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10720pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 81A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock142,968	MOSFET (Metal Oxide)	200V	130A (Tc)	10V	5V @ 250µA	241nC @ 10V	10720pF @ 50V	±30V	-	520W (Tc)	9.7 mOhm @ 81A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRLZ24PBF	Vishay Siliconix	MOSFET N-CH 60V 17A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock109,200	MOSFET (Metal Oxide)	60V	17A (Tc)	4V, 5V	2V @ 250µA	18nC @ 5V	870pF @ 25V	±10V	-	60W (Tc)	100 mOhm @ 10A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
GSFD1028	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 28A, 100V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,500	MOSFET (Metal Oxide)	100 V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	20 nC @ 10 V	1030 pF @ 50 V	±20V	-	53W (Tc)	21mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD60R170CFD7ATMA1	Infineon Technologies	MOSFET N-CH 600V 14A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 76W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	14A (Tc)	10V	4.5V @ 300µA	28 nC @ 10 V	1199 pF @ 400 V	±20V	-	76W (Tc)	170mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
2SK1460LS	Sanyo	N-CHANNEL SILICON MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK2R4A08QM-S4X	Toshiba Semiconductor and Storage	UMOS10 TO-220SIS 80V 2.4MOHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 2.2mA Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: -	Stock240	MOSFET (Metal Oxide)	80 V	100A (Tc)	6V, 10V	3.5V @ 2.2mA	179 nC @ 10 V	13000 pF @ 40 V	±20V	-	47W (Tc)	2.44mOhm @ 50A, 10V	175°C	Through Hole	TO-220SIS	TO-220-3 Full Pack
NTMFS5C426NLT1G	onsemi	SINGLE N-CHANNEL POWER MOSFET 40 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	41A (Ta), 237A (Tc)	4.5V, 10V	2V @ 250µA	93 nC @ 10 V	5600 pF @ 25 V	±20V	-	3.8W (Ta), 128W (Tc)	1.2mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
GSFA95R500	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 10.00A, 95 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950 V Current - Continuous Drain (Id) @ 25°C: 10A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1568 pF @ 50 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 151W (Tj) Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock2,970	MOSFET (Metal Oxide)	950 V	10A (Tj)	10V	3.9V @ 250µA	24 nC @ 10 V	1568 pF @ 50 V	±30V	-	151W (Tj)	500mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
BUK9M15-40HX	Nexperia USA Inc.	MOSFET N-CH 40V 30A LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 44W (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: -	Stock8,187	MOSFET (Metal Oxide)	40 V	30A (Ta)	4.5V, 10V	2.2V @ 1mA	16.2 nC @ 10 V	1026 pF @ 25 V	±16V	-	44W (Ta)	15mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
IPQC60T010S7AXTMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVTYS040N10MCLTWG	onsemi	PTNG 100V LL, SINGLE NCH, LFPAK3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 27µA Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: SOT-1205, 8-LFPAK56	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	6A (Ta), 20A (Tc)	4.5V, 10V	3V @ 27µA	8.6 nC @ 10 V	564 pF @ 50 V	±20V	-	3.1W (Ta), 37W (Tc)	40.9mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-LFPAK	SOT-1205, 8-LFPAK56
MCQ4407B-TP	Micro Commercial Co	MOSFET P-CH 30V 12A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.2W (Tj) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock54,474	MOSFET (Metal Oxide)	30 V	12A (Ta)	4.5V, 20V	2.8V @ 250µA	29.8 nC @ 10 V	2050 pF @ 15 V	±25V	-	3.2W (Tj)	10.5mOhm @ 12A, 20V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
PJL9407_R2_00001	Panjit International Inc.	30V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock5,784	MOSFET (Metal Oxide)	30 V	5A (Ta)	4.5V, 10V	2.5V @ 250µA	4.8 nC @ 4.5 V	516 pF @ 15 V	±20V	-	2.1W (Ta)	50mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
FDB9403L-F085	Fairchild Semiconductor	MOSFET N-CH 40V 110A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 333W (Tj) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	110A (Tc)	10V	3V @ 250µA	245 nC @ 10 V	13500 pF @ 20 V	±20V	-	333W (Tj)	1.2mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PXP015-30QLJ	Nexperia USA Inc.	P-CHANNEL TRENCH MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 16W (Tc) Rds On (Max) @ Id, Vgs: 15.8mOhm @ 8.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MLPAK33 Package / Case: 8-PowerVDFN	Package: -	Stock22,008	MOSFET (Metal Oxide)	30 V	8A (Ta), 24.7A (Tc)	4.5V, 10V	2V @ 250µA	36.9 nC @ 10 V	1200 pF @ 15 V	±25V	-	1.7W (Ta), 16W (Tc)	15.8mOhm @ 8.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	MLPAK33	8-PowerVDFN