Page 624 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF9392PBF
Infineon Technologies

MOSFET P-CH 30V 9.8A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,072
IRF6674TR1PBF
Infineon Technologies

MOSFET N-CH 60V 13.4A DIRECTFET

Package: DirectFET? Isometric MZ

Stock4,432
IRF7207TR
Infineon Technologies

MOSFET P-CH 20V 5.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,489,764
HUFA75823D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 150V 14A TO-252AA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,100
FDG326P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 1.5A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock171,792
AUIRF7416QTR
Infineon Technologies

MOSFET P-CH 30V 10A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock23,928
IPI80N03S4L03AKSA1
Infineon Technologies

MOSFET N-CH 30V 80A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,912
NVMFS5C442NLWFAFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock4,656
IRL520LPBF
Vishay Siliconix

MOSFET N-CH 100V 9.2A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock40,692
STD3N40K3
STMicroelectronics

MOSFET N CH 400V 2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock91,260
BUK9880-55A/CUX
Nexperia USA Inc.

MOSFET N-CH 55V 7A SOT223

Package: TO-261-4, TO-261AA

Stock6,528
BUK7Y10-30B,115
Nexperia USA Inc.

MOSFET N-CH 30V 67A LFPAK

Package: SC-100, SOT-669

Stock5,584
BUK7C10-75AITE,118
Nexperia USA Inc.

MOSFET N-CH 75V 75A D2PAK

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock34,788
TPH7R506NH,L1Q
Toshiba Semiconductor and Storage

MOSFET N CH 60V 22A 8-SOP ADV

Package: 8-PowerVDFN

Stock48,078
BSC035N04LSGATMA1
Infineon Technologies

MOSFET N-CH 40V 100A TDSON-8

Package: 8-PowerTDFN

Stock147,432
IPP030N06NF2SAKMA1
Infineon Technologies

TRENCH 40<-<100V PG-TO220-3

Package: -

Stock2,748
PMV32UP-MIR
Nexperia USA Inc.

MOSFET P-CH 20V 4A TO236AB

Package: -

Request a Quote
NTTFS022N15MC
onsemi

POWER MOSFET, N CHANNEL, 150V, 3

Package: -

Request a Quote
DMT64M2LPSW-13
Diodes Incorporated

MOSFET N-CH 60V 20.7A/100A PWRDI

Package: -

Stock7,404
IRFD322
Harris Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF9392PBF	Infineon Technologies	MOSFET P-CH 30V 9.8A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 12.1 mOhm @ 7.8A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,072	MOSFET (Metal Oxide)	30V	9.8A (Ta)	10V, 20V	2.4V @ 25µA	14nC @ 4.5V	1270pF @ 25V	±25V	-	2.5W (Ta)	12.1 mOhm @ 7.8A, 20V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF6674TR1PBF	Infineon Technologies	MOSFET N-CH 60V 13.4A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 13.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MZ Package / Case: DirectFET? Isometric MZ	Package: DirectFET? Isometric MZ	Stock4,432	MOSFET (Metal Oxide)	60V	13.4A (Ta), 67A (Tc)	10V	4.9V @ 100µA	36nC @ 10V	1350pF @ 25V	±20V	-	3.6W (Ta), 89W (Tc)	11 mOhm @ 13.4A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MZ	DirectFET? Isometric MZ
IRF7207TR	Infineon Technologies	MOSFET P-CH 20V 5.4A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,489,764	MOSFET (Metal Oxide)	20V	5.4A (Tc)	2.7V, 4.5V	700mV @ 250µA	22nC @ 4.5V	780pF @ 15V	±12V	-	2.5W (Tc)	60 mOhm @ 5.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
HUFA75823D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 150V 14A TO-252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,100	MOSFET (Metal Oxide)	150V	14A (Tc)	10V	4V @ 250µA	54nC @ 20V	800pF @ 25V	±20V	-	85W (Tc)	150 mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDG326P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 1.5A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock171,792	MOSFET (Metal Oxide)	20V	1.5A (Ta)	1.8V, 4.5V	1.5V @ 250µA	7nC @ 4.5V	467pF @ 10V	±8V	-	750mW (Ta)	140 mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
AUIRF7416QTR	Infineon Technologies	MOSFET P-CH 30V 10A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.04V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock23,928	MOSFET (Metal Oxide)	30V	10A (Ta)	4.5V, 10V	2.04V @ 250µA	92nC @ 10V	1700pF @ 25V	±20V	-	2.5W (Ta)	20 mOhm @ 5.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IPI80N03S4L03AKSA1	Infineon Technologies	MOSFET N-CH 30V 80A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,912	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2.2V @ 90µA	140nC @ 10V	9750pF @ 25V	±16V	-	136W (Tc)	2.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
NVMFS5C442NLWFAFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock4,656	MOSFET (Metal Oxide)	40V	29A (Ta), 130A (Tc)	4.5V, 10V	2V @ 250µA	50nC @ 10V	3100pF @ 25V	±20V	-	3.7W (Ta), 83W (Tc)	2.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
IRL520LPBF	Vishay Siliconix	MOSFET N-CH 100V 9.2A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock40,692	MOSFET (Metal Oxide)	100V	9.2A (Tc)	4V, 5V	2V @ 250µA	12nC @ 5V	490pF @ 25V	±10V	-	60W (Tc)	270 mOhm @ 5.5A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
STD3N40K3	STMicroelectronics	MOSFET N CH 400V 2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock91,260	MOSFET (Metal Oxide)	400V	2A (Tc)	10V	4.5V @ 50µA	11nC @ 10V	165pF @ 50V	±30V	-	30W (Tc)	3.4 Ohm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9880-55A/CUX	Nexperia USA Inc.	MOSFET N-CH 55V 7A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 8W (Tc) Rds On (Max) @ Id, Vgs: 73 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock6,528	MOSFET (Metal Oxide)	55V	7A (Tc)	4.5V, 10V	2V @ 1mA	11nC @ 5V	584pF @ 25V	±15V	-	8W (Tc)	73 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
BUK7Y10-30B,115	Nexperia USA Inc.	MOSFET N-CH 30V 67A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1183pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock5,584	MOSFET (Metal Oxide)	30V	67A (Tc)	10V	4V @ 1mA	18.8nC @ 10V	1183pF @ 25V	±20V	-	85W (Tc)	10 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BUK7C10-75AITE,118	Nexperia USA Inc.	MOSFET N-CH 75V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V Vgs (Max): ±20V FET Feature: Current Sensing Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock34,788	MOSFET (Metal Oxide)	75V	75A (Tc)	10V	4V @ 1mA	121nC @ 10V	4700pF @ 25V	±20V	Current Sensing	272W (Tc)	10 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
TPH7R506NH,L1Q	Toshiba Semiconductor and Storage	MOSFET N CH 60V 22A 8-SOP ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock48,078	MOSFET (Metal Oxide)	60V	22A (Ta)	10V	4V @ 300µA	31nC @ 10V	2320pF @ 30V	±20V	-	1.6W (Ta), 45W (Tc)	7.5 mOhm @ 11A, 10V	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
BSC035N04LSGATMA1	Infineon Technologies	MOSFET N-CH 40V 100A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock147,432	MOSFET (Metal Oxide)	40V	21A (Ta), 100A (Tc)	4.5V, 10V	2V @ 36µA	64nC @ 10V	5100pF @ 20V	±20V	-	2.5W (Ta), 69W (Tc)	3.5 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPP030N06NF2SAKMA1	Infineon Technologies	TRENCH 40<-<100V PG-TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 119A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 3.05mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-U05 Package / Case: TO-220-3	Package: -	Stock2,748	MOSFET (Metal Oxide)	60 V	26A (Ta), 119A (Tc)	6V, 10V	3.3V @ 80µA	102 nC @ 10 V	4600 pF @ 30 V	±20V	-	3.8W (Ta), 150W (Tc)	3.05mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-U05	TO-220-3
PMV32UP-MIR	Nexperia USA Inc.	MOSFET P-CH 20V 4A TO236AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 510mW (Ta), 4.15W (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 2.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	4A (Ta)	1.8V, 4.5V	950mV @ 250µA	15.5 nC @ 4.5 V	1890 pF @ 10 V	±8V	-	510mW (Ta), 4.15W (Tc)	36mOhm @ 2.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
NTTFS022N15MC	onsemi	POWER MOSFET, N CHANNEL, 150V, 3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	7.4A (Ta), 37.2A (Tc)	8V, 10V	4.5V @ 100µA	17 nC @ 10 V	1315 pF @ 75 V	±20V	-	1.2W (Ta), 71.4W (Tc)	22mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PQFN (3.3x3.3)	8-PowerWDFN
DMT64M2LPSW-13	Diodes Incorporated	MOSFET N-CH 60V 20.7A/100A PWRDI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2799 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 83.3W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 (Type Q) Package / Case: 8-PowerTDFN	Package: -	Stock7,404	MOSFET (Metal Oxide)	60 V	20.7A (Ta), 100A (Tc)	4.5V, 10V	2.5V @ 250µA	46.7 nC @ 10 V	2799 pF @ 30 V	±20V	-	2.8W (Ta), 83.3W (Tc)	4.4mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI5060-8 (Type Q)	8-PowerTDFN
IRFD322	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip Package / Case: 4-DIP (0.300", 7.62mm)	Package: -	Request a Quote	MOSFET (Metal Oxide)	400 V	400mA (Tc)	10V	4V @ 250µA	15 nC @ 10 V	455 pF @ 25 V	±20V	-	1W (Tc)	2.5Ohm @ 250mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip	4-DIP (0.300", 7.62mm)
BS170-D26Z	onsemi	MOSFET N-CH 60V 500MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Package: -	Stock86,871	MOSFET (Metal Oxide)	60 V	500mA (Ta)	10V	3V @ 1mA	-	40 pF @ 10 V	±20V	-	830mW (Ta)	5Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
GSFAT0600	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 0.30A, 60V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Stock47,355	MOSFET (Metal Oxide)	60 V	300mA (Ta)	4.5V, 10V	2.5V @ 250µA	0.44 nC @ 4.5 V	50 pF @ 25 V	±20V	-	150mW (Ta)	3Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
R6535KNZ4C13	Rohm Semiconductor	650V 35A TO-247, HIGH-SPEED SWIT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.21mA Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 379W (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247G Package / Case: TO-247-3	Package: -	Stock1,068	MOSFET (Metal Oxide)	650 V	35A (Tc)	10V	5V @ 1.21mA	72 nC @ 10 V	3000 pF @ 25 V	±20V	-	379W (Tc)	115mOhm @ 18.1A, 10V	150°C (TJ)	Through Hole	TO-247G	TO-247-3
NTMTS0D4N04CTXG	onsemi	MOSFET N-CH 40V 79.8A/558A 8DFNW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 558A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16500 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 244W (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	Package: -	Stock8,997	MOSFET (Metal Oxide)	40 V	79.8A (Ta), 558A (Tc)	10V	4V @ 250µA	251 nC @ 10 V	16500 pF @ 20 V	±20V	-	5W (Ta), 244W (Tc)	0.45mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-DFNW (8.3x8.4)	8-PowerTDFN
SI3483CDV-T1-BE3	Vishay Siliconix	P-CHANNEL 30-V (D-S) MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock11,082	MOSFET (Metal Oxide)	30 V	6.1A (Ta), 8A (Tc)	4.5V, 10V	3V @ 250µA	33 nC @ 10 V	1000 pF @ 15 V	±20V	-	2W (Ta), 4.2W (Tc)	34mOhm @ 6.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
IRFR024TRPBF-BE3	Vishay Siliconix	MOSFET N-CH 60V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock9,966	MOSFET (Metal Oxide)	60 V	14A (Tc)	-	4V @ 250µA	25 nC @ 10 V	640 pF @ 25 V	±20V	-	2.5W (Ta), 42W (Tc)	100mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB03N03LAG	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 7027 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	25 V	80A (Tc)	4.5V, 10V	2V @ 100µA	57 nC @ 5 V	7027 pF @ 15 V	±20V	-	150W (Tc)	2.7mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TSM150NB04CR-RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 40V 10A/41A 8PDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1092 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5.2x5.75) Package / Case: 8-PowerLDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	40 V	10A (Ta), 41A (Tc)	10V	4V @ 250µA	19 nC @ 10 V	1092 pF @ 20 V	±20V	-	3.1W (Ta), 56W (Tc)	15mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PDFN (5.2x5.75)	8-PowerLDFN