|
|
Infineon Technologies |
MOSFET N-CH 30V 90A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Stub Leads, IPak
|
Package: TO-251-3 Stub Leads, IPak |
Stock4,992 |
|
MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2V @ 40µA | 25nC @ 5V | 3200pF @ 15V | ±20V | - | 94W (Tc) | 5 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
|
|
Infineon Technologies |
MOSFET P-CH 30V 3A SOT-23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 98 mOhm @ 3A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Micro3?/SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,318,656 |
|
MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 14nC @ 10V | 510pF @ 25V | ±20V | - | 1.25W (Ta) | 98 mOhm @ 3A, 10V | - | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
Infineon Technologies |
MOSFET N-CH 100V 4.5A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 2.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,592 |
|
MOSFET (Metal Oxide) | 100V | 4.5A (Ta) | 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | ±30V | - | 2.5W (Ta) | 60 mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
Vishay Siliconix |
MOSFET N-CH 30V 16A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 4.45W (Tc)
- Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,009,348 |
|
MOSFET (Metal Oxide) | 30V | 16A (Tc) | 4.5V, 10V | 1.5V @ 250µA | 45nC @ 10V | 2080pF @ 15V | ±12V | - | 2.5W (Ta), 4.45W (Tc) | 9.4 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 13.4A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1452pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta)
- Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 13.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock225,960 |
|
MOSFET (Metal Oxide) | 30V | 13.4A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 28nC @ 10V | 1452pF @ 15V | ±12V | - | 3.7W (Ta) | 11.5 mOhm @ 13.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
|
|
Vishay Siliconix |
MOSFET N-CH 30V 18A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 5.4W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock392,580 |
|
MOSFET (Metal Oxide) | 30V | 18A (Tc) | 4.5V, 10V | 3V @ 250µA | 38nC @ 10V | 1640pF @ 15V | ±20V | - | 3.1W (Ta), 5.4W (Tc) | 8.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
NXP |
MOSFET N-CH 30V 68A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock2,560 |
|
MOSFET (Metal Oxide) | 30V | 68A (Tc) | 4.5V, 10V | 2V @ 1mA | 12nC @ 5V | 1362pF @ 10V | ±20V | - | 62.5W (Tc) | 7.9 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
|
Infineon Technologies |
MOSFET N-CH 900V 15A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock5,200 |
|
MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 3.5V @ 1mA | 94nC @ 10V | 2400pF @ 100V | ±20V | - | 208W (Tc) | 340 mOhm @ 9.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
|
|
Infineon Technologies |
MOSFET N-CH 600V 3.1A TO-251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 49W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO251
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock7,280 |
|
MOSFET (Metal Oxide) | 600V | 3.1A (Tc) | 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | ±20V | - | 49W (Tc) | 1.5 Ohm @ 1.1A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO251 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
Rohm Semiconductor |
MOSFET P-CH 30V 2A TSMT5
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 135 mOhm @ 2A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT5
- Package / Case: SOT-23-5 Thin, TSOT-23-5
|
Package: SOT-23-5 Thin, TSOT-23-5 |
Stock3,392 |
|
MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 2.5V @ 1mA | 3.4nC @ 5V | 310pF @ 10V | ±20V | Schottky Diode (Isolated) | 1.25W (Ta) | 135 mOhm @ 2A, 10V | 150°C (TJ) | Surface Mount | TSMT5 | SOT-23-5 Thin, TSOT-23-5 |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 13A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 24W (Tc)
- Rds On (Max) @ Id, Vgs: 13.2 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerVDFN
|
Package: 8-PowerVDFN |
Stock3,488 |
|
MOSFET (Metal Oxide) | 60V | 13A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 10nC @ 4.5V | 755pF @ 30V | ±20V | - | 24W (Tc) | 13.2 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerVDFN |
|
|
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3479pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 29A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock7,552 |
|
MOSFET (Metal Oxide) | 30V | 185A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 56nC @ 10V | 3479pF @ 15V | ±20V | - | 104W (Tc) | 1.8 mOhm @ 29A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
|
|
IXYS |
MOSFET N-CH 300V 50A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3165pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 690W (Tc)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
|
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock7,536 |
|
MOSFET (Metal Oxide) | 300V | 50A (Tc) | 10V | 6.5V @ 4mA | 65nC @ 10V | 3165pF @ 25V | ±20V | - | 690W (Tc) | 80 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
|
|
Infineon Technologies |
MOSFET N-CH 650V 8A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 290µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 400V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-FP
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock6,984 |
|
MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 4V @ 290µA | 23nC @ 10V | 1150pF @ 400V | ±20V | - | 30W (Tc) | 190 mOhm @ 5.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-FP | TO-220-3 Full Pack |
|
|
STMicroelectronics |
MOSFET N-CH 800V 4.5A TO-220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V
- Vgs (Max): 30V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock13,908 |
|
MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 5V @ 100µA | 13nC @ 10V | 270pF @ 100V | 30V | - | 25W (Tc) | 1.6 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
|
Infineon Technologies |
MOSFET NCH 700V 5.4A TO251
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): 53W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO251
- Package / Case: TO-251-3 Stub Leads, IPak
|
Package: TO-251-3 Stub Leads, IPak |
Stock16,878 |
|
MOSFET (Metal Oxide) | 700V | 5.4A (Tc) | 10V | 3.5V @ 100µA | 10.5nC @ 10V | 225pF @ 100V | ±20V | Super Junction | 53W (Tc) | 1.4 Ohm @ 1A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO251 | TO-251-3 Stub Leads, IPak |
|
|
Vishay Siliconix |
MOSFET N-CH 60V 14A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 37W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock135,576 |
|
MOSFET (Metal Oxide) | 60V | 14A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | ±20V | - | 37W (Tc) | 100 mOhm @ 8.4A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock30,384 |
|
MOSFET (Metal Oxide) | 100V | 12A (Ta), 80A (Tc) | 6V, 10V | 4V @ 250µA | 110nC @ 10V | 6000pF @ 25V | ±20V | - | 310W (Tc) | 9 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
IXYS |
MOSFET N-CH 500V 14A TO247
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Renesas Electronics Corporation |
P-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Diodes Incorporated |
MOSFET BVDSS: 25V~30V U-DFN2020-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 8 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 11A (Ta) | 1.8V, 4.5V | 1.2V @ 250µA | 14.6 nC @ 10 V | 655 pF @ 8 V | ±12V | - | 1.2W (Ta) | 13.5mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
|
|
NEC Corporation |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 55A
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 10 V
- Vgs (Max): 20V
- FET Feature: -
- Power Dissipation (Max): 1.5W
- Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263, TO-220SMD
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 55A | 4V, 10V | 2V @ 1mA | 45 nC @ 10 V | 2100 pF @ 10 V | 20V | - | 1.5W | 17mOhm @ 28A, 10V | -55°C ~ 150°C | Surface Mount | TO-263, TO-220SMD | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
|
|
onsemi |
MOSFET N-CH 40V 24A/123A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4W (Ta), 107W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 24A (Ta), 123A (Tc) | 10V | 3.5V @ 250µA | 100 nC @ 10 V | 4760 pF @ 25 V | ±20V | - | 4W (Ta), 107W (Tc) | 3.7mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
|
Taiwan Semiconductor Corporation |
-30, -64, SINGLE P-CHANNEL
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3234 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (3.1x3.1)
- Package / Case: 8-PowerWDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 14A (Ta), 64A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 55 nC @ 10 V | 3234 pF @ 15 V | ±20V | - | 2.4W (Ta), 50W (Tc) | 8.5mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3.1x3.1) | 8-PowerWDFN |
|
|
Renesas |
UPA2706GR-E1-A - MOS FIELD EFFEC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 15W (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 5.5A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 11A (Ta), 20A (Tc) | 4V, 10V | 2.5V @ 1mA | 7.1 nC @ 5 V | 660 pF @ 10 V | ±20V | - | 3W (Ta), 15W (Tc) | 15mOhm @ 5.5A, 10V | 150°C | Surface Mount | 8-SOP | 8-SOIC (0.173", 4.40mm Width) |
|
|
onsemi |
MOSFET N-CH 60V 7A/27A 8WDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
- Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
|
Package: - |
Stock3,960 |
|
MOSFET (Metal Oxide) | 60 V | 7A (Ta), 27A (Tc) | 10V | 4V @ 20µA | 5.8 nC @ 10 V | 355 pF @ 30 V | ±20V | - | 2.5W (Ta), 31W (Tc) | 20.3mOhm @ 4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
|
Diodes Incorporated |
MOSFET BVDSS: 8V~24V X2-DFN1006-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 380mW (Ta)
- Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN1006-3
- Package / Case: 3-XFDFN
|
Package: - |
Stock28,605 |
|
MOSFET (Metal Oxide) | 20 V | 830mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.41 nC @ 4.5 V | 15.6 pF @ 16 V | ±8V | - | 380mW (Ta) | 990mOhm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN |
|
|
onsemi |
MOSFET P-CH 30V 11.5A/20A 8MLP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 15 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
- Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 11.5A (Ta), 20A (Tc) | 4.5V, 10V | 3V @ 250µA | 91 nC @ 10 V | 3970 pF @ 15 V | ±25V | - | 2.3W (Ta), 41W (Tc) | 10mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |