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Infineon Technologies |
MOSFET N-CH 60V 200MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,648 |
|
MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 2.3V @ 26µA | 1.5nC @ 10V | 56pF @ 25V | ±20V | - | 360mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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|
Infineon Technologies |
MOSFET N-CH 75V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6130pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 66A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,608 |
|
MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 6130pF @ 25V | ±20V | - | 300W (Tc) | 7.1 mOhm @ 66A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 11A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2333pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock5,120 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 250µA | 50nC @ 10V | 2333pF @ 100V | ±30V | - | 50W (Tc) | 400 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 75V 8DFN
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-VDFN Exposed Pad
|
Package: 8-VDFN Exposed Pad |
Stock2,112 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-DFN (5x6) | 8-VDFN Exposed Pad |
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|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 75A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 4.2W (Ta), 34W (Tc)
- Rds On (Max) @ Id, Vgs: 1.85 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN-EP (3.3x3.3)
- Package / Case: 8-PowerWDFN
|
Package: 8-PowerWDFN |
Stock5,456 |
|
MOSFET (Metal Oxide) | 30V | 36A (Ta), 75A (Tc) | 4.5V, 10V | 2V @ 250µA | 100nC @ 10V | 5200pF @ 15V | ±12V | - | 4.2W (Ta), 34W (Tc) | 1.85 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 31A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 15.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock103,464 |
|
MOSFET (Metal Oxide) | 200V | 31A (Tc) | 5V, 10V | 2V @ 250µA | 72nC @ 5V | 3900pF @ 25V | ±20V | - | 180W (Tc) | 75 mOhm @ 15.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 900V 2.5A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 47W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 1.25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock1,976,604 |
|
MOSFET (Metal Oxide) | 900V | 2.5A (Tc) | 10V | 5V @ 250µA | 30nC @ 10V | 1100pF @ 25V | ±30V | - | 47W (Tc) | 3.3 Ohm @ 1.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
Fairchild/ON Semiconductor |
MOSFET P-CH 20V 7.8A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock378,480 |
|
MOSFET (Metal Oxide) | 20V | 7.8A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 55nC @ 4.5V | 1730pF @ 10V | ±8V | - | 2.5W (Ta) | 24 mOhm @ 7.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
ON Semiconductor |
MOSFET N-CH 25V 9.7A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock60,624 |
|
MOSFET (Metal Oxide) | 25V | 9.7A (Ta), 75A (Tc) | 4.5V, 10V | 2V @ 250µA | 13.2nC @ 10V | 1333pF @ 20V | ±20V | - | 1.25W (Ta), 74.4W (Tc) | 8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
STMicroelectronics |
MOSFET N-CH 900V 5.8A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 135W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock55,620 |
|
MOSFET (Metal Oxide) | 900V | 5.8A (Tc) | 10V | 5V @ 250µA | 55nC @ 10V | 1400pF @ 25V | ±30V | - | 135W (Tc) | 2 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Infineon Technologies |
MOSFET IFX OPTIMOS TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 203nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9915pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 313W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 58A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock2,608 |
|
MOSFET (Metal Oxide) | 250V | 96A (Tc) | 10V | 4V @ 270µA | 203nC @ 10V | 9915pF @ 50V | ±20V | - | 313W (Tc) | 12 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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|
Vishay Siliconix |
MOSFET N-CH 60V 60A POLARPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 10-PolarPAK? (L)
- Package / Case: 10-PolarPAK? (L)
|
Package: 10-PolarPAK? (L) |
Stock5,728 |
|
MOSFET (Metal Oxide) | 60V | 60A (Tc) | 10V | 4.4V @ 250µA | 77nC @ 10V | 3100pF @ 30V | ±20V | - | 5.2W (Ta), 125W (Tc) | 6.1 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK? (L) | 10-PolarPAK? (L) |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V TO-220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1665pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 31W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock6,024 |
|
MOSFET (Metal Oxide) | 600V | 10.2A (Tc) | 10V | 3.5V @ 250µA | 40nC @ 10V | 1665pF @ 25V | ±20V | - | 31W (Tc) | 380 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 24V 100A DPAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,152 |
|
- | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 12V 3A SCH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 6V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 84 mOhm @ 1.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-563/SCH6
- Package / Case: SOT-563, SOT-666
|
Package: SOT-563, SOT-666 |
Stock2,432 |
|
MOSFET (Metal Oxide) | 12V | 3A (Ta) | 1.5V, 4.5V | 1.3V @ 1mA | 5.6nC @ 4.5V | 405pF @ 6V | ±10V | - | 1W (Ta) | 84 mOhm @ 1.5A, 4.5V | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 |
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STMicroelectronics |
MOSFET N-CH 40V H2PAK-2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 365W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2Pak-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,688 |
|
MOSFET (Metal Oxide) | 40V | 200A (Tc) | 10V | 4.5V @ 250µA | 141nC @ 10V | 11500pF @ 25V | ±20V | - | 365W (Tc) | 1.1 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
Nexperia USA Inc. |
PSMN6R0-25YLD/LFPAK/REEL 7 Q1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 61A
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 12V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 43W (Tc)
- Rds On (Max) @ Id, Vgs: 6.75 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock4,432 |
|
MOSFET (Metal Oxide) | 25V | 61A | 4.5V, 10V | 2.2V @ 1mA | 10.5nC @ 10V | 705pF @ 12V | ±20V | Schottky Diode (Body) | 43W (Tc) | 6.75 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
|
STMicroelectronics |
MOSFET N-CH 40V 80A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock713,868 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 250µA | 54nC @ 10V | 2200pF @ 25V | ±20V | - | 110W (Tc) | 6.5 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
ON Semiconductor |
MOSFET N-CH 30V 0.15A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: 1.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70 / MCPH3
- Package / Case: SC-70, SOT-323
|
Package: SC-70, SOT-323 |
Stock1,803,576 |
|
MOSFET (Metal Oxide) | 30V | 150mA (Ta) | 1.5V, 4V | 1.3V @ 100µA | 1.58nC @ 10V | 7pF @ 10V | ±10V | - | 150mW (Ta) | 3.7 Ohm @ 80mA, 4V | 150°C (TJ) | Surface Mount | SC-70 / MCPH3 | SC-70, SOT-323 |
|
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STMicroelectronics |
MOSFET N-CH 650V 10A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 430 mOhm @ 5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock20,076 |
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MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 590pF @ 100V | ±25V | - | 110W (Tc) | 430 mOhm @ 5A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 17A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 140W (Tc)
- Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252AA)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock195,480 |
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MOSFET (Metal Oxide) | 200V | 17A (Tc) | 10V | 5.5V @ 250µA | 41nC @ 10V | 910pF @ 25V | ±30V | - | 3W (Ta), 140W (Tc) | 165 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 1200V 1A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 1200 V | 1A (Tc) | 10V | 4.5V @ 50µA | 17.6 nC @ 10 V | 550 pF @ 25 V | ±20V | - | 63W (Tc) | 20Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1200V 1A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 1200 V | 1A (Tc) | 10V | 4.5V @ 50µA | 17.6 nC @ 10 V | 445 pF @ 25 V | ±30V | - | 63W (Tc) | 20Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 50V 5.2A 8SO T&R 2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 50 V | 5.2A (Ta) | 4.5V, 10V | 3V @ 250µA | 14.5 nC @ 10 V | 836 pF @ 30 V | ±20V | - | 1.3W (Ta) | 40mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Goford Semiconductor |
MOSFET N-CH 100V 3.5A SOT-23-3L
- FET Type: -
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3L
- Package / Case: -
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Package: - |
Stock9,000 |
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MOSFET (Metal Oxide) | - | 3.5A (Tc) | 4.5V, 10V | 3V @ 250µA | 5 nC @ 10 V | 209 pF @ 50 V | ±20V | - | - | 80mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | - |
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Sanyo |
N-CHANNEL SILICON MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IAUC100N04S6L020ATMA1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 32µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 25 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 2.04mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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Package: - |
Stock47,766 |
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MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2V @ 32µA | 46 nC @ 10 V | 2744 pF @ 25 V | ±16V | - | 75W (Tc) | 2.04mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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onsemi |
MOSFET N-CH 650V 24A D2PAK-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 540µA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 192W (Tc)
- Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 5V @ 540µA | 43 nC @ 10 V | 1985 pF @ 400 V | ±30V | - | 192W (Tc) | 150mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |