Page 708 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPD07N20
Infineon Technologies

MOSFET N-CH 200V 7A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock420,000
IRFM460
Infineon Technologies

MOSFET N-CH 500V 19A TO-254AA

Package: TO-254-3, TO-254AA (Straight Leads)

Stock5,328
FDP16N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 16A TO-220

Package: TO-220-3

Stock8,208
IPI051N15N5AKSA1
Infineon Technologies

MV POWER MOS

Package: -

Stock3,024
IXFT26N50
IXYS

MOSFET N-CH 500V 26A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock2,656
NTTFS5CS73NLTAG
ON Semiconductor

T6 60V NCH LL IN U8FL

Package: -

Stock7,968
AOI9N50
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 9A TO251A

Package: TO-251-3 Stub Leads, IPak

Stock5,712
2N7002BKMB,315
Nexperia USA Inc.

MOSFET N-CH 60V 450MA 3DFN

Package: 3-XFDFN

Stock6,064
STD7NM80
STMicroelectronics

MOSFET N-CH 800V 6.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock70,800
IPA70R360P7SXKSA1
Infineon Technologies

MOSFET N-CH 700V 34A TO-220

Package: TO-220-3 Full Pack

Stock22,260
STL23NM50N
STMicroelectronics

MOSFET N-CH 500V 2.8A PWRFLT 8X8

Package: 4-PowerFlat? HV

Stock7,872
AUIRF2804S-7P
Infineon Technologies

MOSFET N-CH 40V 240A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock38,220
FDD16AN08A0
Fairchild/ON Semiconductor

MOSFET N-CH 75V 50A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock151,488
SI7790DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 50A PPAK SO-8

Package: PowerPAK? SO-8

Stock65,400
CSD16327Q3
Texas Instruments

MOSFET N-CH 25V 60A 8SON

Package: 8-PowerTDFN

Stock94,830
FQB7P20TM-F085P
onsemi

MOSFET P-CH 200V 7.3A D2PAK

Package: -

Request a Quote
APT12080JVFR
Microchip Technology

MOSFET N-CH 1200V 15A ISOTOP

Package: -

Request a Quote
TK22A65X5-S5X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

Package: -

Stock384
DMTH32M5LPSQ-13
Diodes Incorporated

MOSFET N-CH 30V 170A PWRDI5060-8

Package: -

Stock7,113
SIHP186N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 18A TO220AB

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPD07N20	Infineon Technologies	MOSFET N-CH 200V 7A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 31.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock420,000	MOSFET (Metal Oxide)	200V	7A (Tc)	10V	4V @ 1mA	31.5nC @ 10V	530pF @ 25V	±20V	-	40W (Tc)	400 mOhm @ 4.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFM460	Infineon Technologies	MOSFET N-CH 500V 19A TO-254AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	Package: TO-254-3, TO-254AA (Straight Leads)	Stock5,328	MOSFET (Metal Oxide)	500V	19A (Tc)	10V	4V @ 250µA	190nC @ 10V	4300pF @ 25V	±20V	-	250W (Tc)	270 mOhm @ 12A, 10V	-	Through Hole	TO-254AA	TO-254-3, TO-254AA (Straight Leads)
FDP16N50	Fairchild/ON Semiconductor	MOSFET N-CH 500V 16A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock8,208	MOSFET (Metal Oxide)	500V	16A (Tc)	10V	5V @ 250µA	45nC @ 10V	1945pF @ 25V	±30V	-	200W (Tc)	380 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IPI051N15N5AKSA1	Infineon Technologies	MV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,024	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFT26N50	IXYS	MOSFET N-CH 500V 26A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock2,656	MOSFET (Metal Oxide)	500V	26A (Tc)	10V	4V @ 4mA	160nC @ 10V	4200pF @ 25V	±20V	-	300W (Tc)	200 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
NTTFS5CS73NLTAG	ON Semiconductor	T6 60V NCH LL IN U8FL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,968	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOI9N50	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 500V 9A TO251A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 178W (Tc) Rds On (Max) @ Id, Vgs: 860 mOhm @ 4.5A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock5,712	MOSFET (Metal Oxide)	500V	9A (Tc)	10V	4.5V @ 250µA	24nC @ 10V	1160pF @ 25V	±30V	-	178W (Tc)	860 mOhm @ 4.5A, 10V	-50°C ~ 150°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPak
2N7002BKMB,315	Nexperia USA Inc.	MOSFET N-CH 60V 450MA 3DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 450mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN1006B (0.6x1) Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock6,064	MOSFET (Metal Oxide)	60V	450mA (Ta)	10V	2.1V @ 250µA	0.6nC @ 4.5V	50pF @ 10V	±20V	-	360mW (Ta)	1.6 Ohm @ 450mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	3-DFN1006B (0.6x1)	3-XFDFN
STD7NM80	STMicroelectronics	MOSFET N-CH 800V 6.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 3.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock70,800	MOSFET (Metal Oxide)	800V	6.5A (Tc)	10V	5V @ 250µA	18nC @ 10V	620pF @ 25V	±30V	-	90W (Tc)	1.05 Ohm @ 3.25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPA70R360P7SXKSA1	Infineon Technologies	MOSFET N-CH 700V 34A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 517pF @ 400V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 26.4W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 3A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock22,260	MOSFET (Metal Oxide)	700V	12.5A (Tc)	10V	3.5V @ 150µA	16.4nC @ 10V	517pF @ 400V	±16V	-	26.4W (Tc)	360 mOhm @ 3A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
STL23NM50N	STMicroelectronics	MOSFET N-CH 500V 2.8A PWRFLT 8X8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock7,872	MOSFET (Metal Oxide)	500V	2.8A (Ta), 14A (Tc)	10V	4V @ 250µA	45nC @ 10V	1330pF @ 50V	±25V	-	3W (Ta), 125W (Tc)	210 mOhm @ 7A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
AUIRF2804S-7P	Infineon Technologies	MOSFET N-CH 40V 240A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6930pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 160A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock38,220	MOSFET (Metal Oxide)	40V	240A (Tc)	10V	4V @ 250µA	260nC @ 10V	6930pF @ 25V	±20V	-	330W (Tc)	1.6 mOhm @ 160A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
FDD16AN08A0	Fairchild/ON Semiconductor	MOSFET N-CH 75V 50A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1874pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock151,488	MOSFET (Metal Oxide)	75V	9A (Ta), 50A (Tc)	6V, 10V	4V @ 250µA	47nC @ 10V	1874pF @ 25V	±20V	-	135W (Tc)	16 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
SI7790DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 50A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock65,400	MOSFET (Metal Oxide)	40V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	95nC @ 10V	4200pF @ 20V	±25V	-	5.2W (Ta), 69W (Tc)	4.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
CSD16327Q3	Texas Instruments	MOSFET N-CH 25V 60A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 12.5V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 4 mOhm @ 24A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (3.3x3.3) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock94,830	MOSFET (Metal Oxide)	25V	60A (Tc)	3V, 8V	1.4V @ 250µA	8.4nC @ 4.5V	1300pF @ 12.5V	+10V, -8V	-	3W (Ta)	4 mOhm @ 24A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (3.3x3.3)	8-PowerTDFN
FQB7P20TM-F085P	onsemi	MOSFET P-CH 200V 7.3A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 690mOhm @ 3.65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	7.3A (Tc)	10V	5V @ 250µA	25 nC @ 10 V	770 pF @ 25 V	±30V	-	3.13W (Ta), 90W (Tc)	690mOhm @ 3.65A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
APT12080JVFR	Microchip Technology	MOSFET N-CH 1200V 15A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 485 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 800mOhm @ 7.5A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	15A (Tc)	-	4V @ 2.5mA	485 nC @ 10 V	7800 pF @ 25 V	-	-	-	800mOhm @ 7.5A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
TK22A65X5-S5X	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: -	Stock384	MOSFET (Metal Oxide)	650 V	22A (Ta)	10V	4.5V @ 1.1mA	50 nC @ 10 V	2400 pF @ 300 V	±30V	-	45W (Tc)	160mOhm @ 11A, 10V	150°C	Through Hole	TO-220SIS	TO-220-3 Full Pack
DMTH32M5LPSQ-13	Diodes Incorporated	MOSFET N-CH 30V 170A PWRDI5060-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: -	Stock7,113	MOSFET (Metal Oxide)	30 V	170A (Tc)	4.5V, 10V	3V @ 1mA	68 nC @ 10 V	3944 pF @ 25 V	±16V	-	3.2W (Ta), 100W (Tc)	2.2mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
SIHP186N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 18A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	5V @ 250µA	32 nC @ 10 V	1081 pF @ 100 V	±30V	-	156W (Tc)	193mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
APT5010JVR	Microchip Technology	MOSFET N-CH 500V 44A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	44A (Tc)	-	4V @ 2.5mA	470 nC @ 10 V	8900 pF @ 25 V	-	-	-	100mOhm @ 500mA, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
SISS94DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 200V 5.4A/19.5A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 19.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	5.4A (Ta), 19.5A (Tc)	7.5V, 10V	4V @ 250µA	21 nC @ 10 V	350 pF @ 100 V	±20V	-	5.1W (Ta), 65.8W (Tc)	75mOhm @ 5.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
PJF4NA90_T0_00001	Panjit International Inc.	900V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB-F Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	900 V	4A (Ta)	10V	4V @ 250µA	17 nC @ 10 V	710 pF @ 25 V	±30V	-	44W (Tc)	3.4Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220AB-F	TO-220-3 Full Pack, Isolated Tab
ISC151N20NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 4.5V @ 105µA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 50A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	200 V	9.1A (Ta), 74A (Tc)	10V, 15V	4.5V @ 105µA	47 nC @ 10 V	3100 pF @ 100 V	±20V	-	3W (Ta), 200W (Tc)	14mOhm @ 50A, 15V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IRFR421	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	450 V	2.5A (Tc)	10V	4V @ 250µA	19 nC @ 10 V	350 pF @ 25 V	±20V	-	50W (Tc)	3Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
AONS66407	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 69A (Ta), 310A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9030 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.3W (Ta), 215W (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: -	Stock9,000	MOSFET (Metal Oxide)	40 V	69A (Ta), 310A (Tc)	4.5V, 10V	2.3V @ 250µA	162 nC @ 10 V	9030 pF @ 20 V	±20V	-	7.3W (Ta), 215W (Tc)	0.85mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
PJQ4448P_R2_00001	Panjit International Inc.	40V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333-8 Package / Case: 8-PowerVDFN	Package: -	Stock9,315	MOSFET (Metal Oxide)	40 V	10A (Ta), 42A (Tc)	4.5V, 10V	2.5V @ 250µA	10 nC @ 4.5 V	1040 pF @ 20 V	±20V	-	2W (Ta), 35W (Tc)	11mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN3333-8	8-PowerVDFN
SI2305CDS-T1-GE3-ML	MOSLEADER	P -8V 5.8A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-