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ON Semiconductor |
MOSFET N-CH 30V 75A ATPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2750pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 38A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ATPAK
- Package / Case: ATPAK (2 leads+tab)
|
Package: ATPAK (2 leads+tab) |
Stock7,776 |
|
MOSFET (Metal Oxide) | 30V | 75A (Ta) | 4.5V, 10V | - | 44nC @ 10V | 2750pF @ 10V | ±20V | - | 50W (Tc) | 8.2 mOhm @ 38A, 10V | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
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ON Semiconductor |
MOSFET P-CH 20V 0.76A SOT-416
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 5V
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 301mW (Tj)
- Rds On (Max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-75, SOT-416
- Package / Case: SC-75, SOT-416
|
Package: SC-75, SOT-416 |
Stock104,760 |
|
MOSFET (Metal Oxide) | 20V | 760mA (Tj) | 1.8V, 4.5V | 450mV @ 250µA | 2.1nC @ 4.5V | 156pF @ 5V | ±6V | - | 301mW (Tj) | 360 mOhm @ 350mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SC-75, SOT-416 |
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Diodes Incorporated |
MOSFET N-CH 20V 2.5A SOT23-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 303pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6
- Package / Case: SOT-23-6
|
Package: SOT-23-6 |
Stock6,896 |
|
MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 2.5V, 4.5V | 700mV @ 250µA | 3nC @ 4.5V | 303pF @ 15V | ±12V | - | 1.1W (Ta) | 120 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
MOSFET N-CH 60V 1.1A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 850mW (Ta)
- Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
|
Package: E-Line-3 |
Stock6,624 |
|
MOSFET (Metal Oxide) | 60V | 1.1A (Ta) | 5V, 10V | 3V @ 1mA | - | 350pF @ 25V | ±20V | - | 850mW (Ta) | 330 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Infineon Technologies |
MOSFET N-CH 60V 195A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10034pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 294W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7,936 |
|
MOSFET (Metal Oxide) | 60V | 195A (Tc) | 6V, 10V | 3.7V @ 250µA | 279nC @ 10V | 10034pF @ 25V | ±20V | - | 294W (Tc) | 2.4 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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|
IXYS |
MOSFET N-CH 300V 54A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock3,568 |
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MOSFET (Metal Oxide) | 300V | 54A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 40V 200A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock5,056 |
|
MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 2V @ 250µA | 70nC @ 10V | 4300pF @ 20V | ±20V | - | 3.8W (Ta), 110W (Tc) | 1.5 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 25V 30V V-DFN3333-
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta)
- Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 11.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: V-DFN3333-8
- Package / Case: 8-PowerVDFN
|
Package: 8-PowerVDFN |
Stock5,312 |
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MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 64.2nC @ 10V | 2826pF @ 15V | ±25V | - | 2.4W (Ta) | 6.8 mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | V-DFN3333-8 | 8-PowerVDFN |
|
|
ON Semiconductor |
MOSFET N-CH 600V 0.25A SOT223-4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Rds On (Max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223 (TO-261)
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock3,536 |
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MOSFET (Metal Oxide) | 600V | 250mA (Tc) | 10V | 4.5V @ 50µA | 4.9nC @ 10V | 92pF @ 25V | ±30V | - | 2W (Tc) | 15 Ohm @ 400mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 (TO-261) | TO-261-4, TO-261AA |
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|
ON Semiconductor |
MOSFET N-CH 40V 51A 8WDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
|
Package: 8-PowerWDFN |
Stock3,392 |
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MOSFET (Metal Oxide) | 40V | 51A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 7nC @ 4.5V | 880pF @ 25V | ±20V | - | 38W (Tc) | 7.3 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Nexperia USA Inc. |
MOSFET N-CH 55V 78A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 128W (Tc)
- Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,992 |
|
MOSFET (Metal Oxide) | 55V | 78A (Tc) | 10V | 2.8V @ 1mA | 63nC @ 10V | 4000pF @ 25V | ±16V | - | 128W (Tc) | 9.6 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 35A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock103,464 |
|
MOSFET (Metal Oxide) | 150V | 5A (Ta), 35A (Tc) | 6V, 10V | 4V @ 250µA | 39nC @ 10V | 2150pF @ 25V | ±20V | - | 150W (Tc) | 42 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 20V 6A 6PWRFLAT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 16V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Tc)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat? (2x2)
- Package / Case: 6-PowerWDFN
|
Package: 6-PowerWDFN |
Stock3,856 |
|
MOSFET (Metal Oxide) | 20V | - | 2.5V, 4.5V | 700mV @ 250µA | 6nC @ 4.5V | 550pF @ 16V | ±8V | - | 2.4W (Tc) | 30 mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (2x2) | 6-PowerWDFN |
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IXYS |
MOSFET N-CH 500V 8A D2-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock103,464 |
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MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 5.5V @ 100µA | 20nC @ 10V | 1050pF @ 25V | ±30V | - | 150W (Tc) | 800 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
Texas Instruments |
MOSFET N-CH 30V 100A 8SON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5240pF @ 15V
- Vgs (Max): +10V, -8V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta)
- Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 35A, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (5x6)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock30,180 |
|
MOSFET (Metal Oxide) | 30V | 38A (Ta), 100A (Tc) | 3V, 8V | 1.5V @ 250µA | 36nC @ 4.5V | 5240pF @ 15V | +10V, -8V | - | 3.2W (Ta) | 1.5 mOhm @ 35A, 8V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 28A 8-DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 32W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3x3)
- Package / Case: 8-PowerSMD, Flat Leads
|
Package: 8-PowerSMD, Flat Leads |
Stock46,986 |
|
MOSFET (Metal Oxide) | 30V | 25A (Ta), 28A (Tc) | 2.5V, 10V | 1.2V @ 250µA | 50nC @ 10V | 2250pF @ 15V | ±12V | - | 3.1W (Ta), 32W (Tc) | 3.3 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerSMD, Flat Leads |
|
|
Diodes Incorporated |
MOSFET P-CH 30V 3.5A SOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 77 mOhm @ 4.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock46,068 |
|
MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 2.5V, 10V | 1.3V @ 250µA | 24nC @ 10V | 864pF @ 15V | ±12V | - | 700mW (Ta) | 77 mOhm @ 4.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
IXYS |
MOSFET N-CH 40V 600A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 600A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 590nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 940W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
|
Package: SOT-227-4, miniBLOC |
Stock7,152 |
|
MOSFET (Metal Oxide) | 40V | 600A | 10V | 3.5V @ 250µA | 590nC @ 10V | 40000pF @ 25V | ±20V | - | 940W (Tc) | 1.05 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
|
|
Infineon Technologies |
TRENCH 40<-<100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 186µA
- Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
Package: - |
Stock2,073 |
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MOSFET (Metal Oxide) | 60 V | 37A (Ta), 195A (Tc) | 6V, 10V | 3.3V @ 186µA | 233 nC @ 10 V | 10500 pF @ 30 V | ±20V | - | 3.8W (Ta), 250W (Tc) | 1.5mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Vishay Siliconix |
N-CHANNEL 20-V (D-S) MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Stock19,764 |
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MOSFET (Metal Oxide) | 20 V | 7.5A (Ta), 8A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 18 nC @ 5 V | 1065 pF @ 10 V | ±8V | - | 2W (Ta), 3.6W (Tc) | 24mOhm @ 7.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Panjit International Inc. |
SOT-23, MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock122,409 |
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MOSFET (Metal Oxide) | 30 V | 4.4A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 5.8 nC @ 10 V | 235 pF @ 15 V | ±20V | - | 1.25W (Ta) | 48mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI50
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 14A (Ta), 86A (Tc) | 10V | 4V @ 250µA | 30 nC @ 10 V | 2085 pF @ 50 V | ±20V | - | 1.6W (Ta), 100W (Tc) | 8.9mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Panjit International Inc. |
600V N-CHANNEL MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 4A (Ta) | 10V | 4V @ 250µA | 11.1 nC @ 10 V | 450 pF @ 25 V | ±30V | - | - | 2.4Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 25 V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 80µA | 41 nC @ 5 V | 5090 pF @ 15 V | ±20V | - | 2.8W (Ta), 78W (Tc) | 2.9mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 75A D2PAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Diotec Semiconductor |
MOSFET SOT23 P -60V -0.18A 10OHM
- FET Type: P-Channel
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 180mA
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 250mW
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: -
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Package: - |
Request a Quote |
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- | - | 180mA | - | - | - | - | - | - | 250mW | - | - | Surface Mount | SOT-23 | - |
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onsemi |
PCH 2.5V DRIVE SERIES
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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