Page 749 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AOL1712
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 16A 8ULTRASO

Package: 3-PowerSMD, Flat Leads

Stock761,472
SI1305EDL-T1-GE3
Vishay Siliconix

MOSFET P-CH 8V 0.86A SOT323-3

Package: SC-70, SOT-323

Stock758,568
RSS110N03TB
Rohm Semiconductor

MOSFET N-CH 30V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,584
IRFR9220TR
Vishay Siliconix

MOSFET P-CH 200V 3.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock276,852
IXFH15N100P
IXYS

MOSFET N-CH 1000V 15A TO-247

Package: TO-247-3

Stock2,736
IXKH20N60C5
IXYS

MOSFET N-CH 600V 20A TO-247AD

Package: TO-3P-3 Full Pack

Stock6,368
SIHG460B-GE3
Vishay Siliconix

MOSFET N-CH 500V 20A TO-247AC

Package: TO-247-3

Stock5,680
AOT282L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 80V 18.5A TO220

Package: TO-220-3

Stock4,480
CSD18510KTT
Texas Instruments

GEN1.4 40V-20V

Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Stock5,616
AO3460
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 0.65A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock51,600
BUK9Y21-40E,115
Nexperia USA Inc.

MOSFET N-CH 40V LFPAK

Package: SC-100, SOT-669

Stock3,296
FCA36N60NF
Fairchild/ON Semiconductor

MOSFET N-CH 600V 34.9A TO3PN

Package: TO-3P-3, SC-65-3

Stock103,464
DMNH4011SK3Q-13
Diodes Incorporated

MOSFET N-CH 40V 50A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,328
DMP6185SK3-13
Diodes Incorporated

MOSFET P-CH 60V 9.4A T0252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,128
IPB049NE7N3 G
Infineon Technologies

MOSFET N-CH 75V 80A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock23,112
ZVN3306A
Diodes Incorporated

MOSFET N-CH 60V 270MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock58,824
ZXMP2120FFTA
Diodes Incorporated

MOSFET P-CH 200V SOT23F-3

Package: SOT-23-3 Flat Leads

Stock18,048
SI7820DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 200V 1.7A 1212-8

Package: PowerPAK? 1212-8

Stock317,820
NTD4404NT4G
onsemi

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
NTHL060N090SC1
onsemi

SICFET N-CH 900V 46A TO247-3

Package: -

Stock192

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AOL1712	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 16A 8ULTRASO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.1W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UltraSO-8? Package / Case: 3-PowerSMD, Flat Leads	Package: 3-PowerSMD, Flat Leads	Stock761,472	MOSFET (Metal Oxide)	30V	16A (Ta), 65A (Tc)	4.5V, 10V	2.5V @ 250µA	95nC @ 10V	5120pF @ 15V	±12V	Schottky Diode (Body)	2.1W (Ta), 100W (Tc)	4.2 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	UltraSO-8?	3-PowerSMD, Flat Leads
SI1305EDL-T1-GE3	Vishay Siliconix	MOSFET P-CH 8V 0.86A SOT323-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 290mW (Ta) Rds On (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock758,568	MOSFET (Metal Oxide)	8V	860mA (Ta)	1.8V, 4.5V	450mV @ 250µA (Min)	4nC @ 4.5V	-	±8V	-	290mW (Ta)	280 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3	SC-70, SOT-323
RSS110N03TB	Rohm Semiconductor	MOSFET N-CH 30V 11A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,584	MOSFET (Metal Oxide)	30V	11A (Ta)	4V, 10V	2.5V @ 1mA	17nC @ 5V	1300pF @ 10V	20V	-	2W (Ta)	10.7 mOhm @ 11A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
IRFR9220TR	Vishay Siliconix	MOSFET P-CH 200V 3.6A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock276,852	MOSFET (Metal Oxide)	200V	3.6A (Tc)	10V	4V @ 250µA	20nC @ 10V	340pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFH15N100P	IXYS	MOSFET N-CH 1000V 15A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5140pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 760 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock2,736	MOSFET (Metal Oxide)	1000V	15A (Tc)	10V	6.5V @ 1mA	97nC @ 10V	5140pF @ 25V	±30V	-	543W (Tc)	760 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXKH20N60C5	IXYS	MOSFET N-CH 600V 20A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 200 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXKH) Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock6,368	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	3.5V @ 1.1mA	45nC @ 10V	1520pF @ 100V	±20V	-	-	200 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXKH)	TO-3P-3 Full Pack
SIHG460B-GE3	Vishay Siliconix	MOSFET N-CH 500V 20A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3094pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock5,680	MOSFET (Metal Oxide)	500V	20A (Tc)	10V	4V @ 250µA	170nC @ 10V	3094pF @ 100V	±20V	-	278W (Tc)	250 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
AOT282L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 80V 18.5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7765pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 272.5W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock4,480	MOSFET (Metal Oxide)	80V	18.5A (Ta), 105A (Tc)	6V, 10V	3.5V @ 250µA	178nC @ 10V	7765pF @ 40V	±20V	-	2.1W (Ta), 272.5W (Tc)	3.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
CSD18510KTT	Texas Instruments	GEN1.4 40V-20V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: DDPAK/TO-263-3 Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Stock5,616	-	-	-	4.5V, 10V	-	-	-	±20V	-	-	-	-	Surface Mount	DDPAK/TO-263-3	TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
AO3460	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 0.65A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 650mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3L Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock51,600	MOSFET (Metal Oxide)	60V	650mA (Ta)	4.5V, 10V	2.5V @ 250µA	-	27pF @ 30V	±20V	-	1.4W (Ta)	1.7 Ohm @ 650mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3L	TO-236-3, SC-59, SOT-23-3
BUK9Y21-40E,115	Nexperia USA Inc.	MOSFET N-CH 40V LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 824pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock3,296	MOSFET (Metal Oxide)	40V	33A (Tc)	5V	2.1V @ 1mA	7nC @ 5V	824pF @ 25V	±10V	-	45W (Tc)	17 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
FCA36N60NF	Fairchild/ON Semiconductor	MOSFET N-CH 600V 34.9A TO3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4245pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock103,464	MOSFET (Metal Oxide)	600V	34.9A (Tc)	10V	5V @ 250µA	112nC @ 10V	4245pF @ 100V	±30V	-	312W (Tc)	95 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
DMNH4011SK3Q-13	Diodes Incorporated	MOSFET N-CH 40V 50A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1405pF @ 20V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2.6W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,328	MOSFET (Metal Oxide)	40V	50A (Tc)	4.5V, 10V	4V @ 250µA	25.5nC @ 10V	1405pF @ 20V	20V	-	2.6W (Ta)	10 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
DMP6185SK3-13	Diodes Incorporated	MOSFET P-CH 60V 9.4A T0252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 708pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,128	MOSFET (Metal Oxide)	60V	3.6A (Tc)	4.5V, 10V	3V @ 250µA	14nC @ 10V	708pF @ 30V	±20V	-	1.6W (Ta)	150 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IPB049NE7N3 G	Infineon Technologies	MOSFET N-CH 75V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 91µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 37.5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock23,112	MOSFET (Metal Oxide)	75V	80A (Tc)	10V	3.8V @ 91µA	68nC @ 10V	4750pF @ 37.5V	±20V	-	150W (Tc)	4.9 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
ZVN3306A	Diodes Incorporated	MOSFET N-CH 60V 270MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 18V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock58,824	MOSFET (Metal Oxide)	60V	270mA (Ta)	10V	2.4V @ 1mA	-	35pF @ 18V	±20V	-	625mW (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
ZXMP2120FFTA	Diodes Incorporated	MOSFET P-CH 200V SOT23F-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 137mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 28 Ohm @ 150mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	Package: SOT-23-3 Flat Leads	Stock18,048	MOSFET (Metal Oxide)	200V	137mA (Ta)	10V	3.5V @ 250µA	-	100pF @ 25V	±20V	-	1W (Ta)	28 Ohm @ 150mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SI7820DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 200V 1.7A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 240 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock317,820	MOSFET (Metal Oxide)	200V	1.7A (Ta)	6V, 10V	4V @ 250µA	18nC @ 10V	-	±20V	-	1.5W (Ta)	240 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
NTD4404NT4G	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTHL060N090SC1	onsemi	SICFET N-CH 900V 46A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 4.3V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V Vgs (Max): +19V, -10V FET Feature: - Power Dissipation (Max): 221W (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock192	SiCFET (Silicon Carbide)	900 V	46A (Tc)	15V	4.3V @ 5mA	87 nC @ 15 V	1770 pF @ 450 V	+19V, -10V	-	221W (Tc)	84mOhm @ 20A, 15V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
MSC090SMA070B	Microchip Technology	SICFET N-CH 700V TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock36	SiCFET (Silicon Carbide)	700 V	-	-	-	-	-	-	-	-	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPQC60R010S7AXTMA1	Infineon Technologies	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22 Package / Case: 22-PowerBSOP Module	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	50A (Tc)	12V	4.5V @ 3.08mA	318 nC @ 12 V	-	±20V	-	694W (Tc)	10mOhm @ 50A, 12V	-40°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22	22-PowerBSOP Module
IPW60R125C6FKSA1	Infineon Technologies	MOSFET N-CH 600V 30A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	Package: -	Stock810	MOSFET (Metal Oxide)	600 V	30A (Tc)	10V	3.5V @ 960µA	96 nC @ 10 V	2127 pF @ 100 V	±20V	-	219W (Tc)	125mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
DMN601LTQ-7	Diodes Incorporated	2N7002 FAMILY SOT523 T&R 3K FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 356mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	356mA (Ta)	5V, 10V	2.5V @ 250µA	1.3 nC @ 10 V	47 pF @ 30 V	±20V	-	400mW (Ta)	2Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
UF3C065040K3S	Qorvo	MOSFET N-CH 650V 54A TO247-3 FET Type: N-Channel Technology: - Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 326W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock11,427	-	650 V	54A (Tc)	12V	6V @ 10mA	51 nC @ 15 V	1500 pF @ 100 V	±25V	-	326W (Tc)	52mOhm @ 40A, 12V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
DMS3014SFGQ-13	Diodes Incorporated	MOSFET N-CH 30V 9.5A PWRDI3333-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Stock8,970	MOSFET (Metal Oxide)	30 V	9.5A (Ta)	4.5V, 10V	2.2V @ 250µA	19.3 nC @ 10 V	4310 pF @ 15 V	±12V	-	1W (Ta)	14.5mOhm @ 10.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
SIHFL9110TR-GE3	Vishay Siliconix	MOSFET P-CH 100V 1.1A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock4,506	MOSFET (Metal Oxide)	100 V	1.1A (Tc)	10V	4V @ 250µA	8.7 nC @ 10 V	200 pF @ 25 V	±20V	-	2W (Ta), 3.1W (Tc)	1.2Ohm @ 660mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
SIHG018N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 99A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 99A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7612 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 524W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Stock1,281	MOSFET (Metal Oxide)	600 V	99A (Tc)	10V	5V @ 250µA	228 nC @ 10 V	7612 pF @ 100 V	±30V	-	524W (Tc)	23mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3