Page 773 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF6614TR1PBF
Infineon Technologies

MOSFET N-CH 40V 12.7A DIRECTFET

Package: DirectFET? Isometric ST

Stock5,072
IPB05CN10N G
Infineon Technologies

MOSFET N-CH 100V 100A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock11,496
BTS282ZAKSA1
Infineon Technologies

MOSFET N-CH 49V 80A TO220-7

Package: TO-220-7 (Formed Leads)

Stock7,920
IRL3402PBF
Infineon Technologies

MOSFET N-CH 20V 85A TO-220AB

Package: TO-220-3

Stock43,200
2N6768
Microsemi Corporation

MOSFET N-CH 400V TO-204AE TO-3

Package: TO-204AE

Stock7,584
SUP90N08-6M8P-E3
Vishay Siliconix

MOSFET N-CH 75V 90A TO220AB

Package: TO-220-3

Stock4,800
FDC3612_F095
Fairchild/ON Semiconductor

MOSFET N-CH 100V 2.6A 6-SSOT

Package: SOT-23-6 Thin, TSOT-23-6

Stock6,704
HAT2141H-EL-E
Renesas Electronics America

MOSFET N-CH 100V 15A 5LFPAK

Package: SC-100, SOT-669

Stock75,972
NTMFS4836NT3G
ON Semiconductor

MOSFET N-CH 30V 11A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock40,548
FQB5N20TM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,800
IRFZ14STRR
Vishay Siliconix

MOSFET N-CH 60V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,976
IRF820A
Vishay Siliconix

MOSFET N-CH 500V 2.5A TO-220AB

Package: TO-220-3

Stock16,800
IPC90R1K2C3X1SA1
Infineon Technologies

MOSFET N-CH BARE DIE

Package: -

Stock2,320
IXFK20N80Q
IXYS

MOSFET N-CH 800V 20A TO-264AA

Package: TO-264-3, TO-264AA

Stock5,296
NVATS4A103PZT4G
ON Semiconductor

MOSFET P-CH 30V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,176
STF17N80K5
STMicroelectronics

MOSFET N-CH 800V 14A TO220FP

Package: TO-220-3 Full Pack

Stock6,400
SUM90140E-GE3
Vishay Siliconix

MOSFET N-CH 200V 90A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,760
RMW130N03TB
Rohm Semiconductor

MOSFET N-CH 30V 13A 8PSOP

Package: 8-SMD, Flat Lead

Stock21,498
FDS6679AZ
Fairchild/ON Semiconductor

MOSFET P-CH 30V 13A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock356,964
CPH3314-TL-E
Sanyo

MOSFET P-CH

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6614TR1PBF	Infineon Technologies	MOSFET N-CH 40V 12.7A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 12.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? ST Package / Case: DirectFET? Isometric ST	Package: DirectFET? Isometric ST	Stock5,072	MOSFET (Metal Oxide)	40V	12.7A (Ta), 55A (Tc)	4.5V, 10V	2.25V @ 250µA	29nC @ 4.5V	2560pF @ 20V	±20V	-	2.1W (Ta), 42W (Tc)	8.3 mOhm @ 12.7A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? ST	DirectFET? Isometric ST
IPB05CN10N G	Infineon Technologies	MOSFET N-CH 100V 100A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock11,496	MOSFET (Metal Oxide)	100V	100A (Tc)	10V	4V @ 250µA	181nC @ 10V	12000pF @ 50V	±20V	-	300W (Tc)	5.1 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BTS282ZAKSA1	Infineon Technologies	MOSFET N-CH 49V 80A TO220-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 49V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 36A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-7 Package / Case: TO-220-7 (Formed Leads)	Package: TO-220-7 (Formed Leads)	Stock7,920	MOSFET (Metal Oxide)	49V	80A (Tc)	4.5V, 10V	2V @ 240µA	232nC @ 10V	4800pF @ 25V	±20V	Temperature Sensing Diode	300W (Tc)	6.5 mOhm @ 36A, 10V	-40°C ~ 175°C (TJ)	Through Hole	PG-TO220-7	TO-220-7 (Formed Leads)
IRL3402PBF	Infineon Technologies	MOSFET N-CH 20V 85A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 51A, 7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock43,200	MOSFET (Metal Oxide)	20V	85A (Tc)	4.5V, 7V	700mV @ 250µA	78nC @ 4.5V	3300pF @ 15V	±10V	-	110W (Tc)	8 mOhm @ 51A, 7V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
2N6768	Microsemi Corporation	MOSFET N-CH 400V TO-204AE TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	Package: TO-204AE	Stock7,584	MOSFET (Metal Oxide)	400V	14A (Tc)	10V	4V @ 250µA	110nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	400 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3	TO-204AE
SUP90N08-6M8P-E3	Vishay Siliconix	MOSFET N-CH 75V 90A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4620pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 272W (Tc) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,800	MOSFET (Metal Oxide)	75V	90A (Tc)	10V	4.5V @ 250µA	115nC @ 10V	4620pF @ 30V	±20V	-	3.75W (Ta), 272W (Tc)	6.8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDC3612_F095	Fairchild/ON Semiconductor	MOSFET N-CH 100V 2.6A 6-SSOT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock6,704	MOSFET (Metal Oxide)	100V	2.6A (Ta)	6V, 10V	4V @ 250µA	20nC @ 10V	660pF @ 50V	±20V	-	1.6W (Ta)	125 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
HAT2141H-EL-E	Renesas Electronics America	MOSFET N-CH 100V 15A 5LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock75,972	MOSFET (Metal Oxide)	100V	15A (Ta)	7V, 10V	-	46nC @ 10V	3200pF @ 10V	±20V	-	20W (Tc)	27.5 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
NTMFS4836NT3G	ON Semiconductor	MOSFET N-CH 30V 11A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2677pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890mW (Ta), 55.6W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock40,548	MOSFET (Metal Oxide)	30V	11A (Ta), 90A (Tc)	4.5V, 11.5V	2.5V @ 250µA	28nC @ 4.5V	2677pF @ 12V	±20V	-	890mW (Ta), 55.6W (Tc)	4 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
FQB5N20TM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 4.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,800	MOSFET (Metal Oxide)	200V	4.5A (Tc)	10V	5V @ 250µA	7.5nC @ 10V	270pF @ 25V	±30V	-	3.13W (Ta), 52W (Tc)	1.2 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ14STRR	Vishay Siliconix	MOSFET N-CH 60V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,976	MOSFET (Metal Oxide)	60V	10A (Tc)	10V	4V @ 250µA	11nC @ 10V	300pF @ 25V	±20V	-	3.7W (Ta), 43W (Tc)	200 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF820A	Vishay Siliconix	MOSFET N-CH 500V 2.5A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock16,800	MOSFET (Metal Oxide)	500V	2.5A (Tc)	10V	4.5V @ 250µA	17nC @ 10V	340pF @ 25V	±30V	-	50W (Tc)	3 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPC90R1K2C3X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,320	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFK20N80Q	IXYS	MOSFET N-CH 800V 20A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock5,296	MOSFET (Metal Oxide)	800V	20A (Tc)	10V	4.5V @ 4mA	200nC @ 10V	5100pF @ 25V	±20V	-	360W (Tc)	420 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
NVATS4A103PZT4G	ON Semiconductor	MOSFET P-CH 30V DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2430pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,176	MOSFET (Metal Oxide)	30V	60A (Ta)	4.5V, 10V	2.6V @ 1mA	47nC @ 10V	2430pF @ 10V	±20V	-	60W (Tc)	13 mOhm @ 28A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	ATPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STF17N80K5	STMicroelectronics	MOSFET N-CH 800V 14A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 866pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,400	MOSFET (Metal Oxide)	800V	14A (Tc)	10V	5V @ 250µA	26nC @ 10V	866pF @ 100V	±30V	-	30W (Tc)	340 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
SUM90140E-GE3	Vishay Siliconix	MOSFET N-CH 200V 90A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4132pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,760	MOSFET (Metal Oxide)	200V	90A (Tc)	7.5V, 10V	4V @ 250µA	96nC @ 10V	4132pF @ 100V	±20V	-	375W (Tc)	17 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RMW130N03TB	Rohm Semiconductor	MOSFET N-CH 30V 13A 8PSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 13A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOP Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock21,498	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	2.5V @ 1mA	12nC @ 10V	650pF @ 15V	±20V	-	3W (Ta)	12.6 mOhm @ 13A, 10V	150°C (TJ)	Surface Mount	8-PSOP	8-SMD, Flat Lead
FDS6679AZ	Fairchild/ON Semiconductor	MOSFET P-CH 30V 13A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3845pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock356,964	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	3V @ 250µA	96nC @ 10V	3845pF @ 15V	±25V	-	2.5W (Ta)	9.3 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
CPH3314-TL-E	Sanyo	MOSFET P-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AONS36304	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	37A (Ta), 85A (Tc)	4.5V, 10V	1.9V @ 250µA	60 nC @ 10 V	2430 pF @ 15 V	±20V	-	6.2W (Ta), 42W (Tc)	3mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
IPB100N12S305ATMA2	Infineon Technologies	MOSFET_(120V 300V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	120 V	100A (Tc)	10V	4V @ 240µA	185 nC @ 10 V	11570 pF @ 25 V	±20V	-	300W (Tc)	5.1mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
2SK2158A-T1B-AT	Renesas Electronics Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1.1V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 6 pF @ 3 V Vgs (Max): ±7V FET Feature: - Power Dissipation (Max): 200mW Rds On (Max) @ Id, Vgs: 15Ohm @ 10mA, 4V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SC-59 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	100mA (Ta)	1.5V, 4V	1.1V @ 1µA	-	6 pF @ 3 V	±7V	-	200mW	15Ohm @ 10mA, 4V	150°C	Surface Mount	SC-59	TO-236-3, SC-59, SOT-23-3
IMZ120R060M1HXKSA1	Infineon Technologies	SICFET N-CH 1.2KV 36A TO247-4 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.7V @ 5.6mA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 800 V Vgs (Max): +23V, -7V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-1 Package / Case: TO-247-4	Package: -	Stock1,335	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	15V, 18V	5.7V @ 5.6mA	31 nC @ 18 V	1060 pF @ 800 V	+23V, -7V	-	150W (Tc)	78mOhm @ 13A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-1	TO-247-4
IPP80P03P4L04AKSA2	Infineon Technologies	MOSFET P-CH 30V 80A TO220-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 253µA Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 137W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: -	Stock1,686	MOSFET (Metal Oxide)	30 V	80A (Tc)	-	2V @ 253µA	160 nC @ 10 V	11300 pF @ 25 V	+5V, -16V	-	137W (Tc)	4.4mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
G12P10K	Goford Semiconductor	P100V,RD(MAX)<200M@-10V,RD(MAX)< FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 12A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock3,471	MOSFET (Metal Oxide)	100 V	12A	-	3V @ 250µA	33 nC @ 10 V	1720 pF @ 50 V	±20V	-	57W	200mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
FDC6N50NZFTM	onsemi	FDC6N50NZFTM FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMTH43M8LFG-13	Diodes Incorporated	MOSFET N-CH 40V PWRDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	24A (Ta), 100A (Tc)	5V, 10V	2.5V @ 250µA	40.1 nC @ 10 V	2798 pF @ 20 V	±20V	-	2.62W (Ta), 65.2W (Tc)	3mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN