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Infineon Technologies |
MOSFET N-CH 60V 90A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock2,496 |
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MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 2.2V @ 90µA | 170nC @ 10V | 13000pF @ 25V | ±16V | - | 150W (Tc) | 3.7 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 33A D2-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 144W (Tc)
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,584 |
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MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 5V @ 100µA | 40nC @ 10V | 1750pF @ 50V | ±20V | - | 144W (Tc) | 42 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 130A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock6,496 |
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MOSFET (Metal Oxide) | 40V | 130A (Tc) | 4.5V, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | ±16V | - | 3.8W (Ta), 200W (Tc) | 6.5 mOhm @ 78A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Microsemi Corporation |
MOSFET N-CH 1200V 9A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock7,440 |
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MOSFET (Metal Oxide) | 1200V | 9A (Tc) | 10V | 5V @ 1mA | 75nC @ 10V | 2030pF @ 25V | ±30V | - | 300W (Tc) | 1.5 Ohm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 4A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock5,536 |
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MOSFET (Metal Oxide) | 1000V | 4A (Tc) | 10V | 5V @ 250µA | 26nC @ 10V | 1456pF @ 25V | ±20V | - | 150W (Tc) | 3.3 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 6A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 525V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock2,128 |
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MOSFET (Metal Oxide) | 525V | 6A (Ta) | 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | ±30V | - | 35W (Tc) | 1.3 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 650V 7A TO262F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 434pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7,568 |
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MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 4V @ 250µA | 9.2nC @ 10V | 434pF @ 100V | ±30V | - | 104W (Tc) | 650 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 650V 12A TO262F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 28W (Tc)
- Rds On (Max) @ Id, Vgs: 720 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: -
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock5,296 |
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MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 4.5V @ 250µA | 48nC @ 10V | 2150pF @ 25V | ±30V | - | 28W (Tc) | 720 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 46µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-313
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,968 |
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MOSFET (Metal Oxide) | 100V | 60A (Tc) | 4.5V, 10V | 2.1V @ 46µA | 49nC @ 10V | 3170pF @ 25V | ±16V | - | 94W (Tc) | 12 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock14,640 |
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MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 4V, 5V | 2V @ 250µA | 6.1nC @ 5V | 250pF @ 25V | ±10V | - | 2.5W (Ta), 25W (Tc) | 540 mOhm @ 2.6A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 24A TO247
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 928pF @ 800V
- Vgs (Max): +25V, -5V
- FET Feature: -
- Power Dissipation (Max): 134W (Tc)
- Rds On (Max) @ Id, Vgs: 220 mOhm @ 10A, 20V
- Operating Temperature: -55°C ~ 135°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock5,296 |
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SiCFET (Silicon Carbide) | 1200V | 24A (Tc) | 20V | 4V @ 500µA | 47.1nC @ 20V | 928pF @ 800V | +25V, -5V | - | 134W (Tc) | 220 mOhm @ 10A, 20V | -55°C ~ 135°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 620V 4.2A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 620V
- Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock23,592 |
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MOSFET (Metal Oxide) | 620V | 4.2A (Tc) | 10V | 4.5V @ 50µA | 26nC @ 10V | 680pF @ 50V | ±30V | - | 25W (Tc) | 1.6 Ohm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock16,740 |
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MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2.2V @ 90µA | 140nC @ 10V | 9750pF @ 25V | ±16V | - | 136W (Tc) | 2.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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EPC |
TRANS GAN 30V 60A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 40A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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Package: Die |
Stock19,944 |
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GaNFET (Gallium Nitride) | 30V | 60A (Ta) | 5V | 2.5V @ 20mA | 20nC @ 5V | 2300pF @ 15V | +6V, -4V | - | - | 1.3 mOhm @ 40A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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STMicroelectronics |
MOSFET N-CH 650V 12A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock13,806 |
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MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 4V @ 250µA | 45nC @ 10V | 1300pF @ 50V | ±25V | - | 125W (Tc) | 380 mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9620pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock12,264 |
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MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4V @ 250µA | 210nC @ 10V | 9620pF @ 50V | ±20V | - | 370W (Tc) | 4.5 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Fairchild Semiconductor |
P-CHANNEL POWER MOSFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
- Rds On (Max) @ Id, Vgs: 280mOhm @ 3.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 7.8A (Tc) | 10V | 4V @ 250µA | 19 nC @ 10 V | 600 pF @ 25 V | ±30V | - | 2.5W (Ta), 32W (Tc) | 280mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V 5.6A/7.5A SOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 15 V
- Vgs (Max): +16V, -20V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
- Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: - |
Stock89,493 |
|
MOSFET (Metal Oxide) | 30 V | 5.6A (Ta), 7.5A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 19.5 nC @ 10 V | 745 pF @ 15 V | +16V, -20V | - | 1.3W (Ta), 2.5W (Tc) | 27mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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STMicroelectronics |
POWER FLAT 8L 6X5X1 P1.27
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 6A 6UDFNB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFNB (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: - |
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MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8 nC @ 10 V | 840 pF @ 10 V | ±8V | - | 1W (Ta) | 32.4mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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STMicroelectronics |
MOSFET N-CH 600V 10A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock7,497 |
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MOSFET (Metal Oxide) | 600 V | 10A (Tc) | - | 4.75V @ 250µA | 17 nC @ 10 V | 508 pF @ 100 V | ±25V | - | 90W (Tc) | 390mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Good-Ark Semiconductor |
MOSFET, N-CH, SINGLE, 100A, 60V,
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: - |
Stock2,964 |
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MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 4V @ 250µA | 85 nC @ 10 V | 4800 pF @ 30 V | ±20V | - | 170W (Tc) | 6.5mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Micro Commercial Co |
N-CHANNEL MOSFET, TOLL-8L
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 295A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8350 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 313W (Tj)
- Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL-8L
- Package / Case: 8-PowerSFN
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Package: - |
Stock6,000 |
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MOSFET (Metal Oxide) | 60 V | 295A (Tc) | 6V, 10V | 4V @ 250µA | 108 nC @ 10 V | 8350 pF @ 30 V | ±20V | - | 313W (Tj) | 2mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TOLL-8L | 8-PowerSFN |
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Vishay Siliconix |
MOSFET N-CH 30V 35A PPAK1212-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 42.5 nC @ 10 V | 1390 pF @ 15 V | ±20V | Schottky Diode (Body) | 52W (Tc) | 5mOhm @ 10A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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onsemi |
MOSFET - N-CHANNEL SHIELDED GATE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 139A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 532µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 97A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock2,109 |
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MOSFET (Metal Oxide) | 150 V | 18A (Ta), 139A (Tc) | 10V | 4.5V @ 532µA | 75 nC @ 10 V | 6300 pF @ 75 V | ±20V | - | 3.8W (Ta), 214W (Tc) | 5mOhm @ 97A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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MOSLEADER |
N-Channel 30V 2.7A SOT-23-3
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 30V 20A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 20A (Tc) | - | 1V @ 250µA | 15 nC @ 4.5 V | 450 pF @ 25 V | - | - | 45W (Tc) | 45mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock4,275 |
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MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 4V @ 250µA | 38 nC @ 10 V | 1018 pF @ 25 V | ±30V | - | 125W (Tc) | 850mOhm @ 4.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |