Page 821 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPI15N60C3HKSA1
Infineon Technologies

MOSFET N-CH 650V 15A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,592
IPB09N03LAT
Infineon Technologies

MOSFET N-CH 25V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,208
IRF7465PBF
Infineon Technologies

MOSFET N-CH 150V 1.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock42,540
PSMN8R5-108ESQ
NXP

MOSFET N-CH 108V 100A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,520
2SK3747-MG8
ON Semiconductor

MOSFET N-CH 1500V 2A TO-3PML

Package: TO-3P-3 Full Pack

Stock2,032
TPCA8102(TE12L,Q,M
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 40A SOP-8 ADV

Package: 8-PowerVDFN

Stock7,088
IRFU9120
Vishay Siliconix

MOSFET P-CH 100V 5.6A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock42,600
IPD25N06S4L30ATMA2
Infineon Technologies

MOSFET N-CH 60V 25A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,704
IXFX170N20T
IXYS

MOSFET N-CH 200V 170A PLUS247

Package: TO-247-3

Stock5,328
IXTA3N150HV
IXYS

MOSFET N-CH 1500V 3A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,880
ATP113-TL-H
ON Semiconductor

MOSFET P-CH 60V 35A ATPAK

Package: ATPAK (2 leads+tab)

Stock5,152
AOD3C60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 3A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,320
SI7326DN-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 6.5A PPAK 1212-8

Package: PowerPAK? 1212-8

Stock1,157,052
RCX080N25
Rohm Semiconductor

MOSFET N-CH 250V 8A TO220

Package: TO-220-2 Full Pack

Stock90,000
IXFX44N60
IXYS

MOSFET N-CH 600V 44A PLUS247

Package: TO-247-3

Stock103,464
FDB9403L_F085
Fairchild/ON Semiconductor

MOSFET N-CH 40V 110A

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,224
SIHP21N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 21A TO-220AB

Package: TO-220-3

Stock17,556
PJP4NA90_T0_00001
Panjit International Inc.

900V N-CHANNEL MOSFET

Package: -

Request a Quote
SCT3080AW7TL
Rohm Semiconductor

SICFET N-CH 650V 29A TO263-7

Package: -

Stock2,757
FS30AS-2-T13-B00
Renesas Electronics Corporation

HIGH SPEED SWITCHING N-CHANNEL

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPI15N60C3HKSA1	Infineon Technologies	MOSFET N-CH 650V 15A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 675µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,592	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	3.9V @ 675µA	63nC @ 10V	1660pF @ 25V	±20V	-	156W (Tc)	280 mOhm @ 9.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IPB09N03LAT	Infineon Technologies	MOSFET N-CH 25V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1642pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,208	MOSFET (Metal Oxide)	25V	50A (Tc)	4.5V, 10V	2V @ 20µA	13nC @ 5V	1642pF @ 15V	±20V	-	63W (Tc)	8.9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF7465PBF	Infineon Technologies	MOSFET N-CH 150V 1.9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock42,540	MOSFET (Metal Oxide)	150V	1.9A (Ta)	10V	5.5V @ 250µA	15nC @ 10V	330pF @ 25V	±30V	-	2.5W (Ta)	280 mOhm @ 1.14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
PSMN8R5-108ESQ	NXP	MOSFET N-CH 108V 100A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 108V Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5512pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,520	MOSFET (Metal Oxide)	108V	100A (Tj)	10V	4V @ 1mA	111nC @ 10V	5512pF @ 50V	±20V	-	263W (Tc)	8.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
2SK3747-MG8	ON Semiconductor	MOSFET N-CH 1500V 2A TO-3PML FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V Vgs (Max): ±35V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PML Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock2,032	MOSFET (Metal Oxide)	1500V	2A (Ta)	10V	-	37.5nC @ 10V	380pF @ 30V	±35V	-	-	13 Ohm @ 1A, 10V	150°C (TJ)	Through Hole	TO-3PML	TO-3P-3 Full Pack
TPCA8102(TE12L,Q,M	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 40A SOP-8 ADV FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,088	MOSFET (Metal Oxide)	30V	40A (Ta)	4V, 10V	2V @ 1mA	109nC @ 10V	4600pF @ 10V	±20V	-	1.6W (Ta), 45W (Tc)	6 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
IRFU9120	Vishay Siliconix	MOSFET P-CH 100V 5.6A I-PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock42,600	MOSFET (Metal Oxide)	100V	5.6A (Tc)	10V	4V @ 250µA	18nC @ 10V	390pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	600 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IPD25N06S4L30ATMA2	Infineon Technologies	MOSFET N-CH 60V 25A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 16.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,704	MOSFET (Metal Oxide)	60V	25A (Tc)	4.5V, 10V	2.2V @ 8µA	16.3nC @ 10V	1220pF @ 25V	±16V	-	29W (Tc)	30 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFX170N20T	IXYS	MOSFET N-CH 200V 170A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1150W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,328	MOSFET (Metal Oxide)	200V	170A (Tc)	10V	5V @ 4mA	265nC @ 10V	19600pF @ 25V	±20V	-	1150W (Tc)	11 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXTA3N150HV	IXYS	MOSFET N-CH 1500V 3A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1375pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 7.3 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,880	MOSFET (Metal Oxide)	1500V	3A (Tc)	10V	5V @ 250µA	38.6nC @ 10V	1375pF @ 25V	±30V	-	250W (Tc)	7.3 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
ATP113-TL-H	ON Semiconductor	MOSFET P-CH 60V 35A ATPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 29.5 mOhm @ 18A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	Package: ATPAK (2 leads+tab)	Stock5,152	MOSFET (Metal Oxide)	60V	35A (Ta)	4V, 10V	-	55nC @ 10V	2400pF @ 20V	±20V	-	50W (Tc)	29.5 mOhm @ 18A, 10V	150°C (TJ)	Surface Mount	ATPAK	ATPAK (2 leads+tab)
AOD3C60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 3A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 648pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,320	MOSFET (Metal Oxide)	600V	3A (Tc)	10V	5V @ 250µA	15nC @ 10V	648pF @ 100V	±30V	-	89W (Tc)	1.4 Ohm @ 1A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SI7326DN-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 6.5A PPAK 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock1,157,052	MOSFET (Metal Oxide)	30V	6.5A (Ta)	4.5V, 10V	1.8V @ 250µA	13nC @ 5V	-	±25V	-	1.5W (Ta)	19.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
RCX080N25	Rohm Semiconductor	MOSFET N-CH 250V 8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock90,000	MOSFET (Metal Oxide)	250V	8A (Tc)	10V	5V @ 1mA	15nC @ 10V	840pF @ 25V	±30V	-	2.23W (Ta), 35W (Tc)	600 mOhm @ 4A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
IXFX44N60	IXYS	MOSFET N-CH 600V 44A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	600V	44A (Tc)	10V	4.5V @ 8mA	330nC @ 10V	8900pF @ 25V	±20V	-	560W (Tc)	130 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
FDB9403L_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V 110A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 245nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 333W (Tj) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,224	MOSFET (Metal Oxide)	40V	110A (Tc)	10V	3V @ 250µA	245nC @ 10V	13500pF @ 20V	±20V	-	333W (Tj)	1.2 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHP21N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 21A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 176 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock17,556	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	4V @ 250µA	84nC @ 10V	2030pF @ 100V	±30V	-	227W (Tc)	176 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
PJP4NA90_T0_00001	Panjit International Inc.	900V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	900 V	4A (Ta)	10V	4V @ 250µA	17 nC @ 10 V	710 pF @ 25 V	±30V	-	140W (Tc)	3.4Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SCT3080AW7TL	Rohm Semiconductor	SICFET N-CH 650V 29A TO263-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5.6V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 125W Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock2,757	SiCFET (Silicon Carbide)	650 V	29A (Tc)	-	5.6V @ 5mA	48 nC @ 18 V	571 pF @ 500 V	+22V, -4V	-	125W	104mOhm @ 10A, 18V	175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
FS30AS-2-T13-B00	Renesas Electronics Corporation	HIGH SPEED SWITCHING N-CHANNEL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	30A (Tc)	-	4V @ 1mA	-	1250 pF @ 10 V	-	-	35W (Tc)	100mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	MP-3A	TO-252-3, DPAK (2 Leads + Tab), SC-63
STW75N65DM6-4	STMicroelectronics	N-CHANNEL 650 V, 33 MOHM TYP., 7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 37.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	75A (Tc)	10V	4.75V @ 250µA	118 nC @ 10 V	5700 pF @ 100 V	±25V	-	480W (Tc)	36mOhm @ 37.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4	TO-247-4
RJK0356DPA-01-J0	Renesas Electronics Corporation	POWER TRANSISTOR, MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJW4P06A-AU_R2_000A1	Panjit International Inc.	60V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock15,336	MOSFET (Metal Oxide)	60 V	4A (Ta)	4.5V, 10V	2.5V @ 250µA	10 nC @ 10 V	785 pF @ 30 V	±20V	-	3.1W (Ta)	110mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
TK8P65W-RQ	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR DPA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock5,952	MOSFET (Metal Oxide)	650 V	7.8A (Ta)	10V	3.5V @ 300µA	16 nC @ 10 V	570 pF @ 300 V	±30V	-	80W (Tc)	670mOhm @ 3.9A, 10V	150°C	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJL9403_R2_00001	Panjit International Inc.	30V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 417 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	3.6A (Ta)	4.5V, 10V	2.1V @ 250µA	10 nC @ 10 V	417 pF @ 15 V	±20V	-	2.1W (Ta)	72mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
C3M0120065J-TR	Wolfspeed, Inc.	SIC, MOSFET, 120M, 650V, TO-263- FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.6V @ 1.86mA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V Vgs (Max): +19V, -8V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	650 V	21A (Tc)	15V	3.6V @ 1.86mA	26 nC @ 15 V	640 pF @ 400 V	+19V, -8V	-	86W (Tc)	157mOhm @ 6.76A, 15V	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SQ3418EV-T1_GE3	Vishay Siliconix	MOSFET N-CHANNEL 40V 8A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock106,770	MOSFET (Metal Oxide)	40 V	8A (Tc)	4.5V, 10V	2.5V @ 250µA	12.7 nC @ 10 V	678 pF @ 20 V	±20V	-	5W (Tc)	32mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
FDS9431A-F085	onsemi	MOSFET P-CH 20V 3.5A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	3.5A (Ta)	2.5V, 4.5V	1V @ 250µA	8.5 nC @ 4.5 V	405 pF @ 10 V	±8V	-	2.5W (Ta)	130mOhm @ 3.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)