Page 851 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLR3802TRLPBF
Infineon Technologies

MOSFET N-CH 12V 84A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,400
IRL3714ZSTRRPBF
Infineon Technologies

MOSFET N-CH 20V 36A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,096
IRFR5305CPBF
Infineon Technologies

MOSFET P-CH 55V 31A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,216
IRFSL33N15D
Infineon Technologies

MOSFET N-CH 150V 33A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,944
GP1M005A050PH
Global Power Technologies Group

MOSFET N-CH 500V 4.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,296
NTP5412NG
ON Semiconductor

MOSFET N-CH 60V 60A TO-220AB

Package: TO-220-3

Stock6,256
NTD78N03-001
ON Semiconductor

MOSFET N-CH 25V 11.4A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,888
HUFA75321S3S
Fairchild/ON Semiconductor

MOSFET N-CH 55V 35A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,144
FQPF6N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 3.6A TO-220F

Package: TO-220-3 Full Pack

Stock7,072
STP120NH03L
STMicroelectronics

MOSFET N-CH 30V 60A TO-220

Package: TO-220-3

Stock1,973,412
CSD18512Q5BT
Texas Instruments

MOSFET N-CH 40V 211A 8-VSON

Package: 8-PowerTDFN

Stock6,768
TSM10NC65CF C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

Package: TO-220-3 Full Pack

Stock6,096
IXTR16P60P
IXYS

MOSFET P-CH 600V 10A ISOPLUS247

Package: ISOPLUS247?

Stock7,792
DMN10H099SFG-7
Diodes Incorporated

MOSFET N-CH 100V 4.2A PWRDI3333

Package: 8-PowerWDFN

Stock3,104
STF34NM60N
STMicroelectronics

MOSFET N-CH 600V 29.0A TO220FP

Package: TO-220-3 Full Pack

Stock392,304
STF10N105K5
STMicroelectronics

MOSFET N-CH 1050V 6A TO220FP

Package: TO-220-3 Full Pack

Stock21,360
SQ2389ES-T1_GE3
Vishay Siliconix

MOSFET P-CHAN 40V SO23

Package: TO-236-3, SC-59, SOT-23-3

Stock144,948
AOD32334C
Alpha & Omega Semiconductor Inc.

N

Package: -

Request a Quote
TK1K9A60F-S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 3.7A TO220SIS

Package: -

Request a Quote
SQ3419EV-T1_BE3
Vishay Siliconix

MOSFET P-CH 40V 6.9A 6TSOP

Package: -

Stock11,505

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLR3802TRLPBF	Infineon Technologies	MOSFET N-CH 12V 84A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 6V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,400	MOSFET (Metal Oxide)	12V	84A (Tc)	2.8V, 4.5V	1.9V @ 250µA	41nC @ 5V	2490pF @ 6V	±12V	-	88W (Tc)	8.5 mOhm @ 15A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL3714ZSTRRPBF	Infineon Technologies	MOSFET N-CH 20V 36A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,096	MOSFET (Metal Oxide)	20V	36A (Tc)	4.5V, 10V	2.55V @ 250µA	7.2nC @ 4.5V	550pF @ 10V	±20V	-	35W (Tc)	16 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR5305CPBF	Infineon Technologies	MOSFET P-CH 55V 31A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,216	MOSFET (Metal Oxide)	55V	31A (Tc)	10V	4V @ 250µA	63nC @ 10V	1200pF @ 25V	±20V	-	110W (Tc)	65 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFSL33N15D	Infineon Technologies	MOSFET N-CH 150V 33A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,944	MOSFET (Metal Oxide)	150V	33A (Tc)	10V	5.5V @ 250µA	90nC @ 10V	2020pF @ 25V	±30V	-	3.8W (Ta), 170W (Tc)	56 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
GP1M005A050PH	Global Power Technologies Group	MOSFET N-CH 500V 4.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 627pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 92.5W (Tc) Rds On (Max) @ Id, Vgs: 1.65 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,296	MOSFET (Metal Oxide)	500V	4.5A (Tc)	10V	4V @ 250µA	11nC @ 10V	627pF @ 25V	±30V	-	92.5W (Tc)	1.65 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTP5412NG	ON Semiconductor	MOSFET N-CH 60V 60A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 0V Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,256	MOSFET (Metal Oxide)	60V	60A (Tc)	10V	4V @ 250µA	85nC @ 0V	3220pF @ 25V	±20V	-	125W (Tc)	14 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTD78N03-001	ON Semiconductor	MOSFET N-CH 25V 11.4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta), 64W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 78A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,888	MOSFET (Metal Oxide)	25V	11.4A (Ta), 78A (Tc)	4.5V, 10V	3V @ 250µA	35nC @ 4.5V	2250pF @ 12V	±20V	-	1.4W (Ta), 64W (Tc)	6 mOhm @ 78A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
HUFA75321S3S	Fairchild/ON Semiconductor	MOSFET N-CH 55V 35A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,144	MOSFET (Metal Oxide)	55V	35A (Tc)	10V	4V @ 250µA	44nC @ 20V	680pF @ 25V	±20V	-	93W (Tc)	34 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF6N50	Fairchild/ON Semiconductor	MOSFET N-CH 500V 3.6A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,072	MOSFET (Metal Oxide)	500V	3.6A (Tc)	10V	5V @ 250µA	22nC @ 10V	790pF @ 25V	±30V	-	42W (Tc)	1.3 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
STP120NH03L	STMicroelectronics	MOSFET N-CH 30V 60A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock1,973,412	MOSFET (Metal Oxide)	30V	60A (Tc)	5V, 10V	3V @ 250µA	77nC @ 10V	4100pF @ 25V	±20V	-	110W (Tc)	5.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
CSD18512Q5BT	Texas Instruments	MOSFET N-CH 40V 211A 8-VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 211A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7120pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,768	MOSFET (Metal Oxide)	40V	211A (Tc)	4.5V, 10V	2.2V @ 250µA	98nC @ 10V	7120pF @ 20V	±20V	-	139W (Tc)	1.6 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON-CLIP (5x6)	8-PowerTDFN
TSM10NC65CF C0G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220S Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,096	MOSFET (Metal Oxide)	650V	10A (Tc)	10V	4.5V @ 250µA	34nC @ 10V	1650pF @ 50V	±30V	-	45W (Tc)	900 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220S	TO-220-3 Full Pack
IXTR16P60P	IXYS	MOSFET P-CH 600V 10A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 790 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock7,792	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4.5V @ 250µA	92nC @ 10V	5120pF @ 25V	±20V	-	190W (Tc)	790 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
DMN10H099SFG-7	Diodes Incorporated	MOSFET N-CH 100V 4.2A PWRDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 980mW (Ta) Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,104	MOSFET (Metal Oxide)	100V	4.2A (Ta)	6V, 10V	3V @ 250µA	25.2nC @ 10V	1172pF @ 50V	±20V	-	980mW (Ta)	80 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
STF34NM60N	STMicroelectronics	MOSFET N-CH 600V 29.0A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 31.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2722pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock392,304	MOSFET (Metal Oxide)	600V	31.5A (Tc)	10V	4V @ 250µA	84nC @ 10V	2722pF @ 100V	±25V	-	40W (Tc)	105 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF10N105K5	STMicroelectronics	MOSFET N-CH 1050V 6A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock21,360	MOSFET (Metal Oxide)	1050V	6A (Tc)	10V	5V @ 100µA	21.5nC @ 10V	545pF @ 100V	30V	-	30W (Tc)	1.3 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
SQ2389ES-T1_GE3	Vishay Siliconix	MOSFET P-CHAN 40V SO23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 94 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock144,948	MOSFET (Metal Oxide)	40V	4.1A (Tc)	4.5V, 10V	2.5V @ 250µA	12nC @ 10V	420pF @ 20V	±20V	-	3W (Tc)	94 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
AOD32334C	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.1W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	11A (Ta), 12A (Tc)	4.5V, 10V	2.3V @ 250µA	170 nC @ 10 V	600 pF @ 15 V	±20V	-	4.1W (Ta), 39W (Tc)	20mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
TK1K9A60F-S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 3.7A TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1.9A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	3.7A (Ta)	10V	4V @ 400µA	14 nC @ 10 V	490 pF @ 300 V	±30V	-	30W (Tc)	1.9Ohm @ 1.9A, 10V	150°C	Through Hole	TO-220SIS	TO-220-3 Full Pack
SQ3419EV-T1_BE3	Vishay Siliconix	MOSFET P-CH 40V 6.9A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock11,505	MOSFET (Metal Oxide)	40 V	6.9A (Tc)	4.5V, 10V	2.5V @ 250µA	11.3 nC @ 4.5 V	990 pF @ 20 V	±20V	-	5W (Tc)	58mOhm @ 2.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SIDR610DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 200V 8.9A/39.6A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	8.9A (Ta), 39.6A (Tc)	7.5V, 10V	4V @ 250µA	38 nC @ 10 V	1380 pF @ 100 V	±20V	-	6.25W (Ta), 125W (Tc)	31.9mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8
GT150N12T	Goford Semiconductor	MOSFET N-CH 120V 55A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1596 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	120 V	55A (Tc)	10V	4.5V @ 250µA	22 nC @ 10 V	1596 pF @ 60 V	±20V	-	96W (Tc)	18mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-220	TO-220-3
IST011N06NM5AUMA1	Infineon Technologies	TRENCH 40<-<100V PG-HSOF-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 399A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 148µA Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 313W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-5-1 Package / Case: 5-PowerSFN	Package: -	Stock3,831	MOSFET (Metal Oxide)	60 V	38A (Ta), 399A (Tc)	6V, 10V	3.3V @ 148µA	154 nC @ 10 V	8100 pF @ 30 V	±20V	-	3.8W (Ta), 313W (Tc)	1.1mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-5-1	5-PowerSFN
2SK3706-MG5	Sanyo	MOSFET FOR 100V MOTOR DRIVER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF642	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	16A (Tc)	10V	4V @ 250µA	64 nC @ 10 V	1275 pF @ 25 V	±20V	-	125W (Tc)	220mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
PJA3448_R1_00001	Panjit International Inc.	SOT-23, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 71mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	3.3A (Ta)	4.5V, 10V	2.1V @ 250µA	6.1 nC @ 10 V	241 pF @ 20 V	±20V	-	1.25W (Ta)	71mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SSF2314	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 4.5A, 20V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock18,000	MOSFET (Metal Oxide)	20 V	5.8A (Tc)	1.8V, 4.5V	-	11 nC @ 4.5 V	775 pF @ 10 V	±10V	-	1.56W (Tc)	25mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
DMP3036SFV-7	Diodes Incorporated	MOSFET P-CH 30V 30A POWERDI3333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.3W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Stock5,820	MOSFET (Metal Oxide)	30 V	30A (Ta)	5V, 10V	2.5V @ 250µA	16.5 nC @ 10 V	1931 pF @ 15 V	±25V	-	2.3W (Ta)	20mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerVDFN