Page 867 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF3315L
Infineon Technologies

MOSFET N-CH 150V 21A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,944
IRF7663
Infineon Technologies

MOSFET P-CH 20V 8.2A MICRO8

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock10,956
2SK2962,T6F(J
Toshiba Semiconductor and Storage

MOSFET N-CH

Package: TO-226-3, TO-92-3 Long Body

Stock4,368
IXFH80N08
IXYS

MOSFET N-CH 80V 80A TO-247

Package: TO-247-3

Stock5,968
FQAF6N90
Fairchild/ON Semiconductor

MOSFET N-CH 900V 4.5A TO-3PF

Package: SC-94

Stock7,712
FQD16N15TM
Fairchild/ON Semiconductor

MOSFET N-CH 150V 11.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,616
BSZ076N06NS3GATMA1
Infineon Technologies

MOSFET N-CH 60V 20A TSDSON-8

Package: 8-PowerVDFN

Stock2,400
APTC60DAM24T1G
Microsemi Corporation

MOSFET N-CH 600V 95A SP1

Package: SP1

Stock5,440
IXTH60N15
IXYS

MOSFET N-CH 150V 60A TO-247

Package: TO-247-3

Stock390,000
HAT2160H-EL-E
Renesas Electronics America

MOSFET N-CH 20V 60A LFPAK

Package: SC-100, SOT-669

Stock30,960
NVMFS5C423NLAFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock2,544
TJ15P04M3,RQ(S
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 15A DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,784
2SK3046
Panasonic Electronic Components

MOSFET N-CH 500V 7A TO-220D

Package: TO-220-3 Full Pack

Stock8,628
IPAW60R180P7SXKSA1
Infineon Technologies

MOSFET N-CH 650V 18A TO220

Package: TO-220-3 Full Pack

Stock9,912
IXFN80N50P
IXYS

MOSFET N-CH 500V 66A SOT-227

Package: SOT-227-4, miniBLOC

Stock6,348
NVGS5120PT1G
ON Semiconductor

MOSFET P-CH 60V 1.8A 6TSOP

Package: SOT-23-6

Stock4,144
RT1A045APTCR
Rohm Semiconductor

MOSFET P-CH 12V 4.5A TSST8

Package: 8-SMD, Flat Lead

Stock23,424
PSMN2R2-30YLC,115
Nexperia USA Inc.

MOSFET N-CH 30V 100A LFPAK

Package: SC-100, SOT-669

Stock150,666
NP32N055SHE-E1-AY
Renesas Electronics Corporation

MOSFET N-CH 55V 32A TO252

Package: -

Request a Quote
SI4190BDY-T1-GE3
Vishay Siliconix

N-CHANNEL 100 V (D-S) MOSFET SO-

Package: -

Stock26,574

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF3315L	Infineon Technologies	MOSFET N-CH 150V 21A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,944	MOSFET (Metal Oxide)	150V	21A (Tc)	10V	4V @ 250µA	95nC @ 10V	1300pF @ 25V	±20V	-	3.8W (Ta), 94W (Tc)	82 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF7663	Infineon Technologies	MOSFET P-CH 20V 8.2A MICRO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock10,956	MOSFET (Metal Oxide)	20V	8.2A (Ta)	2.5V, 4.5V	1.2V @ 250µA	45nC @ 5V	2520pF @ 10V	±12V	-	1.8W (Ta)	20 mOhm @ 7A, 4.5V	-	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
2SK2962,T6F(J	Toshiba Semiconductor and Storage	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-92MOD Package / Case: TO-226-3, TO-92-3 Long Body	Package: TO-226-3, TO-92-3 Long Body	Stock4,368	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
IXFH80N08	IXYS	MOSFET N-CH 80V 80A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock5,968	MOSFET (Metal Oxide)	80V	80A (Tc)	10V	4V @ 4mA	180nC @ 10V	4800pF @ 25V	±20V	-	300W (Tc)	9 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
FQAF6N90	Fairchild/ON Semiconductor	MOSFET N-CH 900V 4.5A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock7,712	MOSFET (Metal Oxide)	900V	4.5A (Tc)	10V	5V @ 250µA	52nC @ 10V	1880pF @ 25V	±30V	-	96W (Tc)	1.9 Ohm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	SC-94
FQD16N15TM	Fairchild/ON Semiconductor	MOSFET N-CH 150V 11.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 5.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,616	MOSFET (Metal Oxide)	150V	11.8A (Tc)	10V	4V @ 250µA	30nC @ 10V	910pF @ 25V	±25V	-	2.5W (Ta), 55W (Tc)	160 mOhm @ 5.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSZ076N06NS3GATMA1	Infineon Technologies	MOSFET N-CH 60V 20A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock2,400	MOSFET (Metal Oxide)	60V	20A (Tc)	10V	4V @ 35µA	50nC @ 10V	4000pF @ 30V	±20V	-	2.1W (Ta), 69W (Tc)	7.6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerVDFN
APTC60DAM24T1G	Microsemi Corporation	MOSFET N-CH 600V 95A SP1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 95A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 462W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	Package: SP1	Stock5,440	MOSFET (Metal Oxide)	600V	95A	10V	3.9V @ 5mA	300nC @ 10V	14400pF @ 25V	±20V	-	462W (Tc)	24 mOhm @ 47.5A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
IXTH60N15	IXYS	MOSFET N-CH 150V 60A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 275W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	150V	60A (Tc)	10V	4V @ 250µA	110nC @ 10V	3000pF @ 25V	±20V	-	275W (Tc)	33 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
HAT2160H-EL-E	Renesas Electronics America	MOSFET N-CH 20V 60A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7750pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock30,960	MOSFET (Metal Oxide)	20V	60A (Ta)	4.5V, 10V	2.3V @ 1mA	54nC @ 4.5V	7750pF @ 10V	±20V	-	30W (Tc)	2.6 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
NVMFS5C423NLAFT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock2,544	MOSFET (Metal Oxide)	40V	31A (Ta), 150A (Tc)	4.5V, 10V	2V @ 250µA	50nC @ 10V	3100pF @ 20V	±20V	-	3.7W (Ta), 83W (Tc)	2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
TJ15P04M3,RQ(S	Toshiba Semiconductor and Storage	MOSFET P-CH 40V 15A DPAK-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,784	MOSFET (Metal Oxide)	40V	15A (Ta)	4.5V, 10V	2V @ 100µA	26nC @ 10V	1100pF @ 10V	±20V	-	29W (Tc)	36 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
2SK3046	Panasonic Electronic Components	MOSFET N-CH 500V 7A TO-220D FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220D-A1 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock8,628	MOSFET (Metal Oxide)	500V	7A (Tc)	10V	5V @ 1mA	-	1200pF @ 20V	±30V	-	2W (Ta), 40W (Tc)	1 Ohm @ 4A, 10V	150°C (TJ)	Through Hole	TO-220D-A1	TO-220-3 Full Pack
IPAW60R180P7SXKSA1	Infineon Technologies	MOSFET N-CH 650V 18A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock9,912	MOSFET (Metal Oxide)	650V	18A (Tc)	10V	4V @ 280µA	25nC @ 10V	1081pF @ 400V	±20V	-	26W (Tc)	180 mOhm @ 5.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IXFN80N50P	IXYS	MOSFET N-CH 500V 66A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 66A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,348	MOSFET (Metal Oxide)	500V	66A	10V	5V @ 8mA	195nC @ 10V	12700pF @ 25V	±30V	-	700W (Tc)	65 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
NVGS5120PT1G	ON Semiconductor	MOSFET P-CH 60V 1.8A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 942pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 111 mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock4,144	MOSFET (Metal Oxide)	60V	1.8A (Ta)	4.5V, 10V	3V @ 250µA	18.1nC @ 10V	942pF @ 30V	±20V	-	600mW (Ta)	111 mOhm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
RT1A045APTCR	Rohm Semiconductor	MOSFET P-CH 12V 4.5A TSST8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 6V Vgs (Max): -8V FET Feature: - Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSST Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock23,424	MOSFET (Metal Oxide)	12V	4.5A (Ta)	1.5V, 4.5V	1V @ 1mA	40nC @ 4.5V	4200pF @ 6V	-8V	-	650mW (Ta)	30 mOhm @ 4.5A, 4.5V	150°C (TJ)	Surface Mount	8-TSST	8-SMD, Flat Lead
PSMN2R2-30YLC,115	Nexperia USA Inc.	MOSFET N-CH 30V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3310pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 141W (Tc) Rds On (Max) @ Id, Vgs: 2.15 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock150,666	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	1.95V @ 1mA	55nC @ 10V	3310pF @ 15V	±20V	-	141W (Tc)	2.15 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
NP32N055SHE-E1-AY	Renesas Electronics Corporation	MOSFET N-CH 55V 32A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.2W (Ta), 66W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 16A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (MP-3ZK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	32A (Tc)	-	4V @ 250µA	32 nC @ 10 V	1600 pF @ 25 V	-	-	1.2W (Ta), 66W (Tc)	25mOhm @ 16A, 10V	175°C (TJ)	Surface Mount	TO-252 (MP-3ZK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SI4190BDY-T1-GE3	Vishay Siliconix	N-CHANNEL 100 V (D-S) MOSFET SO- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 8.4W (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock26,574	MOSFET (Metal Oxide)	100 V	12A (Ta), 17A (Tc)	4.5V, 10V	2.5V @ 250µA	95 nC @ 10 V	4150 pF @ 50 V	±20V	-	3.8W (Ta), 8.4W (Tc)	9.3mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
UJ4SC075010L8S	Qorvo	750V/10MO,SICFET,G4,TOLL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2N7002LT7H	onsemi	MOSFET N-CH 60V 115MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	115mA (Tc)	5V, 10V	2.5V @ 250µA	-	50 pF @ 25 V	±20V	-	225mW (Ta)	7.5Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
PJW4N06A-AU_R2_000A1	Panjit International Inc.	60V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock18,135	MOSFET (Metal Oxide)	60 V	4A (Ta)	4.5V, 10V	2.5V @ 250µA	5.1 nC @ 4.5 V	509 pF @ 15 V	±20V	-	3.7W (Ta)	100mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
TSM2303CX-RFG-ML	MOSLEADER	P-Channel -30V -1.3A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SPB03N60S5	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	3.2A (Tc)	10V	5.5V @ 135µA	16 nC @ 10 V	420 pF @ 25 V	±20V	-	38W (Tc)	1.4Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SI3415C-TP	Micro Commercial Co	P-CHANNEL MOSFET, SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	5A (Ta)	1.8V, 4.5V	1.25V @ 250µA	13 nC @ 10 V	540 pF @ 10 V	±10V	-	1W	40mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
NVD6415ANLT4G	onsemi	MOSFET N-CH 100V 23A DPAK-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	23A (Tc)	4.5V, 10V	2V @ 250µA	20 nC @ 4.5 V	1024 pF @ 25 V	±20V	-	83W (Tc)	52mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
SPW20N60C3FKSA1	Infineon Technologies	MOSFET N-CH 650V 20.7A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	Package: -	Stock6,354	MOSFET (Metal Oxide)	650 V	20.7A (Tc)	10V	3.9V @ 1mA	114 nC @ 10 V	2400 pF @ 25 V	±20V	-	208W (Tc)	190mOhm @ 13.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3