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Infineon Technologies |
MOSFET N-CH 55V 100A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock7,280 |
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MOSFET (Metal Oxide) | 55V | 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 230nC @ 10V | 5660pF @ 25V | ±20V | - | 300W (Tc) | 4.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 20V 0.5A SC89-3L
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 0.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 280mW (Ta)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 500mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89-3
- Package / Case: SC-89, SOT-490
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Package: SC-89, SOT-490 |
Stock303,000 |
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MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.8V, 4.5V | 0.9V @ 250µA | - | 100pF @ 10V | ±8V | - | 280mW (Ta) | 800 mOhm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
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ON Semiconductor |
MOSFET 20V 0.63A SC-88
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SC-88/SC70-6/SOT-363
- Package / Case: 6-TSSOP, SC-88, SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock3,984 |
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- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | SC-88/SC70-6/SOT-363 | 6-TSSOP, SC-88, SOT-363 |
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ON Semiconductor |
MOSFET N-CH 500V 5.5A ATPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 13.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.75A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ATPAK
- Package / Case: ATPAK (2 leads+tab)
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Package: ATPAK (2 leads+tab) |
Stock2,736 |
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MOSFET (Metal Oxide) | 500V | 5.5A (Ta) | 10V | - | 13.8nC @ 10V | 350pF @ 30V | ±30V | - | 70W (Tc) | 2 Ohm @ 2.75A, 10V | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
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ON Semiconductor |
MOSFET N-CH 60V 20A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 1.36W (Ta), 60W (Tj)
- Rds On (Max) @ Id, Vgs: 48 mOhm @ 10A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock5,056 |
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MOSFET (Metal Oxide) | 60V | 20A (Ta) | 5V | 2V @ 250µA | 32nC @ 5V | 990pF @ 25V | ±15V | - | 1.36W (Ta), 60W (Tj) | 48 mOhm @ 10A, 5V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 200V 30A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1597pF @ 25V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,312 |
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MOSFET (Metal Oxide) | 200V | 30A (Tc) | - | 4V @ 250µA | 38nC @ 10V | 1597pF @ 25V | - | - | 125W (Tc) | 75 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 600V 32A TO-264AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
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Package: TO-264-3, TO-264AA |
Stock5,328 |
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MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 4.5V @ 8mA | 325nC @ 10V | 9000pF @ 25V | ±20V | - | 500W (Tc) | 250 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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Vishay Siliconix |
MOSFET N-CH 250V 2.7A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock93,888 |
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MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | ±20V | - | 3.1W (Ta), 36W (Tc) | 2 Ohm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 5.1 Ohm @ 1.25A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,328 |
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MOSFET (Metal Oxide) | 900V | 2.5A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 748pF @ 25V | ±30V | - | 94W (Tc) | 5.1 Ohm @ 1.25A, 10V | 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Nexperia USA Inc. |
MOSFET N-CH 60V 76A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 106W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock2,176 |
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MOSFET (Metal Oxide) | 60V | 76A (Tc) | 10V | 4V @ 1mA | 39nC @ 10V | 2370pF @ 30V | ±20V | - | 106W (Tc) | 8 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 55A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Ta)
- Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 12.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock129,132 |
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MOSFET (Metal Oxide) | 30V | 55A (Ta) | 4.5V, 10V | 3V @ 1mA | 29nC @ 10V | 1200pF @ 15V | ±20V | - | 60W (Ta) | 10.5 mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 40V TO252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock22,716 |
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MOSFET (Metal Oxide) | 40V | - | 10V | - | 65nC @ 10V | - | - | - | - | - | 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V 4.5A SC-70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Dual
- Package / Case: PowerPAK? SC-70-6 Dual
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Package: PowerPAK? SC-70-6 Dual |
Stock138,660 |
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MOSFET (Metal Oxide) | 30V | 4.5A (Tc) | 2.5V, 10V | 1.3V @ 250µA | 23nC @ 10V | 600pF @ 15V | ±12V | Schottky Diode (Body) | 1.9W (Ta), 6.5W (Tc) | 65 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Dual | PowerPAK? SC-70-6 Dual |
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STMicroelectronics |
MOSFET N-CH 1500V 2.5A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 9 Ohm @ 1.3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock7,072 |
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MOSFET (Metal Oxide) | 1500V | 2.5A (Tc) | 10V | 5V @ 250µA | 29.3nC @ 10V | 939pF @ 25V | ±30V | - | 140W (Tc) | 9 Ohm @ 1.3A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock1,731 |
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MOSFET (Metal Oxide) | 60 V | 50A (Tc) | - | 2V @ 250µA | 66 nC @ 5 V | 3300 pF @ 25 V | ±10V | - | 150W (Tc) | 28mOhm @ 31A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Renesas Electronics Corporation |
P-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor Inc. |
N
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.2W (Ta), 260W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 38.5A (Ta), 120A (Tc) | 8V, 10V | 3.5V @ 250µA | 110 nC @ 10 V | 5300 pF @ 30 V | ±20V | - | 6.2W (Ta), 260W (Tc) | 2.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2PAK, TO-262AA |
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Nexperia USA Inc. |
PMPB07R3EN/SOT1220-2/DFN2020M-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
- Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020M-6
- Package / Case: 6-UDFN Exposed Pad
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Package: - |
Stock15,858 |
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MOSFET (Metal Oxide) | 30 V | 12A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 19 nC @ 10 V | 914 pF @ 15 V | ±20V | - | 1.9W (Ta), 12.5W (Tc) | 8.6mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020M-6 | 6-UDFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.8V @ 273µA
- Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 3.8V @ 273µA | 206 nC @ 10 V | 14400 pF @ 37.5 V | ±20V | - | 300W (Tc) | 2.3mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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STMicroelectronics |
AUTOMOTIVE-GRADE N-CHANNEL 600 V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: HU3PAK
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 4.75V @ 250µA | 55 nC @ 10 V | 2350 pF @ 100 V | ±25V | - | 250W (Tc) | 80mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | HU3PAK | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Diodes Incorporated |
MOSFET P-CH 30V 3.8A SOT23 T&R
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.08W
- Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock23,970 |
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MOSFET (Metal Oxide) | 30 V | 3.8A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 11 nC @ 10 V | 563 pF @ 25 V | ±20V | - | 1.08W | 65mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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IXYS |
1200V/120MOHM SIC MOSFET TO-263-
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 27A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Microsemi Corporation |
MOSFET P-CH 100V 6.5A 18ULCC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 12 V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 12V
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 18-ULCC (9.14x7.49)
- Package / Case: 18-CLCC
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Package: - |
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MOSFET (Metal Oxide) | 100 V | 6.5A (Tc) | 12V | 4V @ 1mA | 45 nC @ 12 V | - | ±20V | - | 25W (Tc) | 350mOhm @ 6.5A, 12V | -55°C ~ 150°C | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
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Diodes Incorporated |
MOSFET N-CH 60V 115MA SOT323
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 115mA (Ta) | 5V, 10V | 2V @ 250µA | - | 50 pF @ 25 V | ±20V | - | 200mW (Ta) | 7.5Ohm @ 50mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET N-CH 30V 9A/35A 8TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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Package: - |
Stock48,855 |
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MOSFET (Metal Oxide) | 30 V | 9A (Ta), 35A (Tc) | 4.5V, 10V | 2V @ 250µA | 17 nC @ 10 V | 1300 pF @ 15 V | ±20V | - | 2.1W (Ta), 25W (Tc) | 11.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 17.2A 8SO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 17.2A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 36 nC @ 4.5 V | 2910 pF @ 15 V | ±20V | - | 2.5W (Ta) | 5.6mOhm @ 17.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Panjit International Inc. |
100V/ 5MOHM/ LOW FOM MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 138W (Tc)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB-L
- Package / Case: TO-220-3
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Package: - |
Stock5,634 |
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MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 6V, 10V | 3.8V @ 270µA | 53 nC @ 10 V | 3910 pF @ 50 V | ±20V | - | 138W (Tc) | 5mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB-L | TO-220-3 |
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onsemi |
T8 80V SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
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MOSFET (Metal Oxide) | 80 V | 15A (Ta), 74A (Tc) | 10V | 4V @ 95µA | 25 nC @ 10 V | 1640 pF @ 40 V | ±20V | - | 3.7W (Ta), 89W (Tc) | 6.7mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 5-DFNW (4.9x5.9) (8-SOFL-WF) | 8-PowerTDFN, 5 Leads |