Page 897 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BUZ31
Infineon Technologies

MOSFET N-CH 200V 14.5A TO220AB

Package: TO-220-3

Stock118,380
IRFR3707
Infineon Technologies

MOSFET N-CH 30V 61A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock16,284
AO4435_103
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 10.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,432
IXTH240N055T
IXYS

MOSFET N-CH 55V 240A TO-247

Package: TO-247-3

Stock2,896
2N7002W-7
Diodes Incorporated

MOSFET N-CH 60V 115MA SOT-323

Package: SC-70, SOT-323

Stock36,000
BUK7880-55A,115
NXP

MOSFET N-CH 55V 7A SOT-223

Package: TO-261-4, TO-261AA

Stock6,112
IRF7406PBF
Infineon Technologies

MOSFET P-CH 30V 5.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock28,104
IXFT18N100Q3
IXYS

MOSFET N-CH 1000V 18A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock5,088
TN0110N3-G-P002
Microchip Technology

MOSFET N-CH 100V 350MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock4,128
NVMFS4C03NT3G
ON Semiconductor

MOSFET N-CH 30V 31.4A SO8FL

Package: 8-PowerTDFN

Stock7,616
AOD2916
Alpha & Omega Semiconductor Inc.

MOSFET N CH 100V 5.5A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock240,084
CSD17559Q5
Texas Instruments

MOSFET N-CH 30V 100A 8SON

Package: 8-PowerTDFN

Stock3,120
BUK626R2-40C,118
Nexperia USA Inc.

MOSFET N-CH 40V 90A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock39,630
STB25NF06LAG
STMicroelectronics

MOSFET N-CH 60V 25A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock22,848
STW24N60DM2
STMicroelectronics

MOSFET N-CH 600V 18A TO-247

Package: TO-247-3

Stock6,016
IRFU1N60APBF
Vishay Siliconix

MOSFET N-CH 600V 1.4A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock19,224
IRFP350PBF
Vishay Siliconix

MOSFET N-CH 400V 16A TO-247AC

Package: TO-247-3

Stock46,380
VN10LP
Diodes Incorporated

MOSFET N-CH 60V 270MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock21,768
STW28N65M2
STMicroelectronics

MOSFET N-CH 650V 20A TO247

Package: TO-247-3

Stock7,704
ZVN4206GTA
Diodes Incorporated

MOSFET N-CH 60V 1A SOT223

Package: TO-261-4, TO-261AA

Stock534,072

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BUZ31	Infineon Technologies	MOSFET N-CH 200V 14.5A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock118,380	MOSFET (Metal Oxide)	200V	14.5A (Tc)	5V	4V @ 1mA	-	1120pF @ 25V	±20V	-	95W (Tc)	200 mOhm @ 9A, 5V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IRFR3707	Infineon Technologies	MOSFET N-CH 30V 61A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock16,284	MOSFET (Metal Oxide)	30V	61A (Tc)	4.5V, 10V	3V @ 250µA	19nC @ 4.5V	1990pF @ 15V	±20V	-	87W (Tc)	13 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
AO4435_103	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 10.5A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 20V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 14 mOhm @ 11A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,432	MOSFET (Metal Oxide)	30V	10.5A (Ta)	5V, 20V	3V @ 250µA	24nC @ 10V	1400pF @ 15V	±25V	-	3.1W (Ta)	14 mOhm @ 11A, 20V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IXTH240N055T	IXYS	MOSFET N-CH 55V 240A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock2,896	MOSFET (Metal Oxide)	55V	240A (Tc)	10V	4V @ 250µA	170nC @ 10V	7600pF @ 25V	±20V	-	480W (Tc)	3.6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
2N7002W-7	Diodes Incorporated	MOSFET N-CH 60V 115MA SOT-323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock36,000	MOSFET (Metal Oxide)	60V	115mA (Ta)	5V, 10V	2V @ 250µA	-	50pF @ 25V	±20V	-	200mW (Ta)	7.5 Ohm @ 50mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
BUK7880-55A,115	NXP	MOSFET N-CH 55V 7A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock6,112	MOSFET (Metal Oxide)	55V	7A (Tc)	10V	4V @ 1mA	12nC @ 10V	500pF @ 25V	±20V	-	8W (Tc)	80 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRF7406PBF	Infineon Technologies	MOSFET P-CH 30V 5.8A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock28,104	MOSFET (Metal Oxide)	30V	5.8A (Ta)	4.5V, 10V	1V @ 250µA	59nC @ 10V	1100pF @ 25V	±20V	-	2.5W (Ta)	45 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IXFT18N100Q3	IXYS	MOSFET N-CH 1000V 18A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4890pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 660 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock5,088	MOSFET (Metal Oxide)	1000V	18A (Tc)	10V	6.5V @ 4mA	90nC @ 10V	4890pF @ 25V	±30V	-	830W (Tc)	660 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TN0110N3-G-P002	Microchip Technology	MOSFET N-CH 100V 350MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 500µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock4,128	MOSFET (Metal Oxide)	100V	350mA (Tj)	4.5V, 10V	2V @ 500µA	-	60pF @ 25V	±20V	-	1W (Tc)	3 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
NVMFS4C03NT3G	ON Semiconductor	MOSFET N-CH 30V 31.4A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 31.4A (Ta), 143A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3071pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.71W (Ta), 77W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,616	MOSFET (Metal Oxide)	30V	31.4A (Ta), 143A (Tc)	4.5V, 10V	2.2V @ 250µA	45.2nC @ 10V	3071pF @ 15V	±20V	-	3.71W (Ta), 77W (Tc)	2.1 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
AOD2916	Alpha & Omega Semiconductor Inc.	MOSFET N CH 100V 5.5A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock240,084	MOSFET (Metal Oxide)	100V	5.5A (Ta), 25A (Tc)	4.5V, 10V	2.7V @ 250µA	20nC @ 10V	870pF @ 50V	±20V	-	2.5W (Ta), 50W (Tc)	34 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
CSD17559Q5	Texas Instruments	MOSFET N-CH 30V 100A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 1.15 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,120	MOSFET (Metal Oxide)	30V	40A (Ta), 100A (Tc)	4.5V, 10V	1.7V @ 250µA	51nC @ 4.5V	9200pF @ 15V	±20V	-	3.2W (Ta), 96W (Tc)	1.15 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON-CLIP (5x6)	8-PowerTDFN
BUK626R2-40C,118	Nexperia USA Inc.	MOSFET N-CH 40V 90A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock39,630	MOSFET (Metal Oxide)	40V	90A (Tc)	10V	2.8V @ 1mA	67nC @ 10V	3720pF @ 25V	±16V	-	128W (Tc)	6.2 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STB25NF06LAG	STMicroelectronics	MOSFET N-CH 60V 25A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 25A Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock22,848	MOSFET (Metal Oxide)	60V	25A	5V, 10V	-	14nC @ 10V	-	-	-	-	-	-	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STW24N60DM2	STMicroelectronics	MOSFET N-CH 600V 18A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,016	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	5V @ 250µA	29nC @ 10V	1055pF @ 100V	±25V	-	150W (Tc)	200 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IRFU1N60APBF	Vishay Siliconix	MOSFET N-CH 600V 1.4A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 229pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 7 Ohm @ 840mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock19,224	MOSFET (Metal Oxide)	600V	1.4A (Tc)	10V	4V @ 250µA	14nC @ 10V	229pF @ 25V	±30V	-	36W (Tc)	7 Ohm @ 840mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IRFP350PBF	Vishay Siliconix	MOSFET N-CH 400V 16A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock46,380	MOSFET (Metal Oxide)	400V	16A (Tc)	10V	4V @ 250µA	150nC @ 10V	2600pF @ 25V	±20V	-	190W (Tc)	300 mOhm @ 9.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
VN10LP	Diodes Incorporated	MOSFET N-CH 60V 270MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock21,768	MOSFET (Metal Oxide)	60V	270mA (Ta)	5V, 10V	2.5V @ 1mA	-	60pF @ 25V	±20V	-	625mW (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
STW28N65M2	STMicroelectronics	MOSFET N-CH 650V 20A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,704	MOSFET (Metal Oxide)	650V	20A (Tc)	10V	4V @ 250µA	35nC @ 10V	1440pF @ 100V	±25V	-	170W (Tc)	180 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
ZVN4206GTA	Diodes Incorporated	MOSFET N-CH 60V 1A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock534,072	MOSFET (Metal Oxide)	60V	1A (Ta)	5V, 10V	3V @ 1mA	-	100pF @ 25V	±20V	-	2W (Ta)	1 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
SFW9520TM	Fairchild Semiconductor	P-CHANNEL POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	6A (Tc)	10V	4V @ 250µA	20 nC @ 10 V	550 pF @ 25 V	±30V	-	3.8W (Ta), 49W (Tc)	600mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
PMV20XNE-ML	MOSLEADER	N 30V 7.2A SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMTH3002LPSQ-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V POWERDI506 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 (Type K) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	240A (Tc)	4.5V, 10V	2V @ 1mA	77 nC @ 10 V	5000 pF @ 15 V	±16V	-	1.2W (Ta), 136W (Tc)	1.6mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8 (Type K)	8-PowerTDFN
SIR826BDP-T1-RE3	Vishay Siliconix	MOSFET N-CH 80V 19.8A/80.8A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 80.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock44,928	MOSFET (Metal Oxide)	80 V	19.8A (Ta), 80.8A (Tc)	7.5V, 10V	3.8V @ 250µA	69 nC @ 10 V	3030 pF @ 40 V	±20V	-	5W (Ta), 83W (Tc)	5.1mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
TP65H150BG4JSG-TR	Transphorm	GANFET N-CH 650V 13A QFN5X6 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs(th) (Max) @ Id: 2.8V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 6V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Stock11,508	GaNFET (Gallium Nitride)	650 V	16A (Tc)	6V	2.8V @ 500µA	4.9 nC @ 10 V	400 pF @ 400 V	±10V	-	83W (Tc)	180mOhm @ 10A, 6V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
SQ2361ES-T1_BE3	Vishay Siliconix	MOSFET P-CH 60V 2.8A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock203,865	MOSFET (Metal Oxide)	60 V	2.8A (Tc)	4.5V, 10V	2.5V @ 250µA	12 nC @ 10 V	550 pF @ 30 V	±20V	-	2W (Tc)	177mOhm @ 2.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SQW61N65EF-GE3	Vishay Siliconix	MOSFET N-CH 650V 62A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 344 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7379 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: -	Stock921	MOSFET (Metal Oxide)	650 V	62A (Tc)	-	4V @ 250µA	344 nC @ 10 V	7379 pF @ 100 V	±30V	-	625W (Tc)	52mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD	TO-247-3
SSF6007	Good-Ark Semiconductor	MOSFET, P-CH, SINGLE, -0.13A, -5 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 130mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230mW (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 130mA, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock17,955	MOSFET (Metal Oxide)	50 V	130mA (Tc)	10V	2V @ 1mA	-	45 pF @ 5 V	±20V	-	230mW (Tc)	7Ohm @ 130mA, 10V	-55°C ~ 150°C	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3