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Infineon Technologies |
MOSFET N-CH 100V 35A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 39µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,576 |
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MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 4V @ 39µA | 31nC @ 10V | 2070pF @ 50V | ±20V | - | 71W (Tc) | 26 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Microsemi Corporation |
MOSFET N-CH TO-204AA TO-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4W (Ta), 75W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-204AA (TO-3)
- Package / Case: TO-204AA, TO-3
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Package: TO-204AA, TO-3 |
Stock3,504 |
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MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 4V @ 250µA | 40nC @ 10V | - | ±20V | - | 4W (Ta), 75W (Tc) | 1.8 Ohm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA (TO-3) | TO-204AA, TO-3 |
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Renesas Electronics America |
MOSFET N-CH 500V 5A MP3A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 41.7W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MP-3A
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,872 |
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MOSFET (Metal Oxide) | 500V | 5A (Ta) | 10V | - | - | 550pF @ 25V | ±30V | - | 41.7W (Tc) | 1.6 Ohm @ 2A, 10V | 150°C (TJ) | Surface Mount | MP-3A | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 5A TO220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock4,256 |
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MOSFET (Metal Oxide) | 500V | 5A (Ta) | 10V | 4V @ 1mA | 16nC @ 10V | 550pF @ 25V | ±30V | - | 35W (Tc) | 1.7 Ohm @ 2.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 25V 2.5A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
- Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,776 |
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MOSFET (Metal Oxide) | 25V | 2.5A (Ta) | 4.5V, 10V | 2V @ 250µA | 1.8nC @ 5V | 115pF @ 20V | ±20V | - | 1.04W (Ta), 20.8W (Tc) | 95 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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Microsemi Corporation |
MOSFET N-CH 200V 317A SP6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 317A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1136W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP6
- Package / Case: SP6
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Package: SP6 |
Stock6,128 |
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MOSFET (Metal Oxide) | 200V | 317A | 10V | 5V @ 10mA | 448nC @ 10V | 27400pF @ 25V | ±30V | - | 1136W (Tc) | 6 mOhm @ 158.5A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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IXYS |
MOSFET N-CH 1500V 6A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 540W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock4,064 |
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MOSFET (Metal Oxide) | 1500V | 6A (Tc) | 10V | 5V @ 250µA | 67nC @ 10V | 2230pF @ 25V | ±20V | - | 540W (Tc) | 3.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 10A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock2,432 |
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MOSFET (Metal Oxide) | 800V | 10A (Tc) | 10V | 5.5V @ 2.5mA | 40nC @ 10V | 2050pF @ 25V | ±30V | - | 300W (Tc) | 1.1 Ohm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 25V 54A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 334A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5693pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 30A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock6,752 |
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MOSFET (Metal Oxide) | 25V | 54A (Ta), 334A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 85nC @ 10V | 5693pF @ 12V | ±20V | - | 3.2W (Ta), 125W (Tc) | 0.7 mOhm @ 30A, 10V | 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Nexperia USA Inc. |
MOSFET N-CH 80V LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 4640pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 147W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock5,424 |
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MOSFET (Metal Oxide) | 80V | 62A (Tc) | 5V | 2.1V @ 1mA | 28.9nC @ 5V | 4640pF @ 25V | ±10V | - | 147W (Tc) | 14 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Diodes Incorporated |
MOSFET P-CH 20V POWERDI5060-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 585nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12826pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta)
- Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock7,600 |
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MOSFET (Metal Oxide) | 20V | 60A (Tc) | 2.5V, 10V | 1.4V @ 250µA | 585nC @ 10V | 12826pF @ 10V | ±12V | - | 2.3W (Ta) | 1.9 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 650V 5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,944 |
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MOSFET (Metal Oxide) | 650V | 5A (Tc) | 10V | 4V @ 250µA | 9nC @ 10V | 270pF @ 100V | ±25V | - | 60W (Tc) | 1.15 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 131nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock255,660 |
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MOSFET (Metal Oxide) | 30V | 34A (Ta), 100A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 131nC @ 10V | 10000pF @ 15V | ±20V | - | 2.5W (Ta), 139W (Tc) | 1.4 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Nexperia USA Inc. |
MOSFET 2N-CH 60V SC-70
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323-3
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock6,608 |
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MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 5V, 10V | 2.1V @ 250µA | 1nC @ 10V | 23.6pF @ 10V | ±20V | - | 310mW (Ta), 1.67W (Tc) | 2.8 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323-3 | SC-70, SOT-323 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 106W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock15,384 |
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MOSFET (Metal Oxide) | 600V | 10.2A (Tc) | 10V | 3.5V @ 250µA | 45nC @ 10V | 1770pF @ 25V | ±20V | - | 106W (Tc) | 380 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 100V 100A 8SON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 96W (Tc)
- Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 13A, 6V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON (5x6)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock3,568 |
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MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 3.4V @ 250µA | 35nC @ 10V | 2670pF @ 50V | ±20V | - | 3.2W (Ta), 96W (Tc) | 11.1 mOhm @ 13A, 6V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 650V I2PAK-FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 983pF @ 50V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAKFP (TO-281)
- Package / Case: TO-262-3 Full Pack, I2Pak
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Package: TO-262-3 Full Pack, I2Pak |
Stock8,352 |
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MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 4V @ 250µA | 33.3nC @ 10V | 983pF @ 50V | ±25V | - | 30W (Tc) | 380 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I2Pak |
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Fairchild/ON Semiconductor |
MOSFET N-CH 20V 15A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock421,680 |
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MOSFET (Metal Oxide) | 20V | 15A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 66nC @ 5V | 4700pF @ 10V | ±8V | - | 2.5W (Ta) | 7.5 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 650V 32A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2355pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 99 mOhm @ 16A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock8,172 |
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MOSFET (Metal Oxide) | 650V | 32A (Tc) | 10V | 4V @ 250µA | 56.5nC @ 10V | 2355pF @ 100V | ±25V | - | 250W (Tc) | 99 mOhm @ 16A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 500V 12A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 50V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock390,000 |
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MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 4V @ 100µA | 27nC @ 10V | 816pF @ 50V | ±25V | - | 90W (Tc) | 320 mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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International Rectifier |
AUTOMOTIVE POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: - |
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MOSFET (Metal Oxide) | 55 V | 3.1A (Ta) | 4V, 10V | 2V @ 250µA | 15.6 nC @ 5 V | 510 pF @ 25 V | ±16V | - | 1W (Ta) | 65mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO-220
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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- | - | 100A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |
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Wolfspeed, Inc. |
GEN 3 650V 25 M SIC MOSFET
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
- Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V
- Vgs (Max): +19V, -8V
- FET Feature: -
- Power Dissipation (Max): 326W (Tc)
- Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Stock2,316 |
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SiCFET (Silicon Carbide) | 650 V | 97A (Tc) | 15V | 3.6V @ 9.22mA | 108 nC @ 15 V | 2980 pF @ 600 V | +19V, -8V | - | 326W (Tc) | 34mOhm @ 33.5A, 15V | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Wolfspeed, Inc. |
SIC, MOSFET, 25M, 650V, TOLL, T&
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
- Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 400 V
- Vgs (Max): -8V, +19V
- FET Feature: -
- Power Dissipation (Max): 326W (Tc)
- Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL
- Package / Case: 8-PowerSFN
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Package: - |
Stock6,000 |
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SiCFET (Silicon Carbide) | 650 V | 77A (Tc) | 15V | 3.6V @ 9.22mA | 111 nC @ 15 V | 2970 pF @ 400 V | -8V, +19V | - | 326W (Tc) | 34mOhm @ 33.5A, 15V | -40°C ~ 175°C (TJ) | Surface Mount | TOLL | 8-PowerSFN |
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Panjit International Inc. |
650V/ 130MOHM / 29A/ EASY TO DRI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 235W (Tc)
- Rds On (Max) @ Id, Vgs: 130mOhm @ 10.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 29A (Tc) | 10V | 4V @ 250µA | 51 nC @ 10 V | 1920 pF @ 400 V | ±30V | - | 235W (Tc) | 130mOhm @ 10.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT23 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 810mW (Ta)
- Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock8,760 |
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MOSFET (Metal Oxide) | 30 V | 3.6A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 4.1 nC @ 4.5 V | 353 pF @ 10 V | ±12V | - | 810mW (Ta) | 67mOhm @ 2.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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IXYS |
DISCRETE MOSFET 110A 650V X3 TO2
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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