Page 923 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

GP2M020A050N
Global Power Technologies Group

MOSFET N-CH 500V 20A TO3PN

Package: TO-3P-3, SC-65-3

Stock3,344
SUP45N03-13L-E3
Vishay Siliconix

MOSFET N-CH 30V 45A TO220AB

Package: TO-220-3

Stock7,744
SI7411DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 7.5A 1212-8

Package: PowerPAK? 1212-8

Stock14,640
AOL1424
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 70A 8ULTRASO

Package: 3-PowerSMD, Flat Leads

Stock26,400
FQP3N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 3A TO-220

Package: TO-220-3

Stock116,784
STP16NK60Z
STMicroelectronics

MOSFET N-CH 600V 14A TO-220

Package: TO-220-3

Stock158,988
IPB032N10N5ATMA1
Infineon Technologies

DIFFERENTIATED MOSFETS

Package: -

Stock5,824
ATP202-TL-H
ON Semiconductor

MOSFET N-CH 30V 50A ATPAK

Package: ATPAK (2 leads+tab)

Stock4,784
SI2316DS-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 2.9A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock230,412
STF34NM60ND
STMicroelectronics

MOSFET N-CH 600V 29A TO-220FP

Package: TO-220-3 Full Pack

Stock4,288
TK32E12N1,S1X
Toshiba Semiconductor and Storage

MOSFET N CH 120V 60A TO-220

Package: TO-220-3

Stock11,508
MTMF82310BBF
Panasonic Electronic Components

MOSFET N-CH 30V 18A S08

Package: 8-SMD, Flat Lead

Stock23,508
SIA408DJ-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 4.5A SC70-6

Package: PowerPAK? SC-70-6

Stock360,012
NTD3055-150T4G
ON Semiconductor

MOSFET N-CH 60V 9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,293,144
BSL211SPH6327XTSA1
Infineon Technologies

MOSFET P-CH 20V 4.7A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock27,912
IPD600N25N3GATMA1
Infineon Technologies

MOSFET N-CH 250V 25A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock73,644
SI4884BDY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 16.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock314,016
BUK7Y6R0-60EX
Nexperia USA Inc.

MOSFET N-CH 60V 100A LFPAK

Package: SC-100, SOT-669

Stock46,962
FDS2582
Fairchild/ON Semiconductor

MOSFET N-CH 150V 4.1A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock556,344
SUD50N04-8M8P-4GE3
Vishay Siliconix

MOSFET N-CH 40V 14A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock448,212

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
GP2M020A050N	Global Power Technologies Group	MOSFET N-CH 500V 20A TO3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock3,344	MOSFET (Metal Oxide)	500V	20A (Tc)	10V	5V @ 250µA	44nC @ 10V	2880pF @ 25V	±30V	-	312W (Tc)	300 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
SUP45N03-13L-E3	Vishay Siliconix	MOSFET N-CH 30V 45A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,744	MOSFET (Metal Oxide)	30V	45A (Tc)	4.5V, 10V	3V @ 250µA	70nC @ 10V	2730pF @ 25V	±10V	-	88W (Tc)	13 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SI7411DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 7.5A 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 11.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock14,640	MOSFET (Metal Oxide)	20V	7.5A (Ta)	1.8V, 4.5V	1V @ 300µA	41nC @ 4.5V	-	±8V	-	1.5W (Ta)	19 mOhm @ 11.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
AOL1424	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 70A 8ULTRASO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UltraSO-8? Package / Case: 3-PowerSMD, Flat Leads	Package: 3-PowerSMD, Flat Leads	Stock26,400	MOSFET (Metal Oxide)	30V	15A (Ta), 70A (Tc)	4.5V, 10V	2.5V @ 250µA	48nC @ 10V	2170pF @ 15V	±20V	-	2.2W (Ta), 50W (Tc)	6.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	UltraSO-8?	3-PowerSMD, Flat Leads
FQP3N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock116,784	MOSFET (Metal Oxide)	600V	3A (Tc)	10V	5V @ 250µA	13nC @ 10V	450pF @ 25V	±30V	-	75W (Tc)	3.6 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
STP16NK60Z	STMicroelectronics	MOSFET N-CH 600V 14A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock158,988	MOSFET (Metal Oxide)	600V	14A (Tc)	10V	4.5V @ 50µA	86nC @ 10V	2650pF @ 25V	±30V	-	190W (Tc)	420 mOhm @ 7A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPB032N10N5ATMA1	Infineon Technologies	DIFFERENTIATED MOSFETS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,824	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ATP202-TL-H	ON Semiconductor	MOSFET N-CH 30V 50A ATPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	Package: ATPAK (2 leads+tab)	Stock4,784	MOSFET (Metal Oxide)	30V	50A (Ta)	4.5V, 10V	-	27nC @ 10V	1650pF @ 10V	±20V	-	40W (Tc)	12 mOhm @ 25A, 10V	150°C (TJ)	Surface Mount	ATPAK	ATPAK (2 leads+tab)
SI2316DS-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 2.9A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock230,412	MOSFET (Metal Oxide)	30V	2.9A (Ta)	4.5V, 10V	800mV @ 250µA (Min)	7nC @ 10V	215pF @ 15V	±20V	-	700mW (Ta)	50 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
STF34NM60ND	STMicroelectronics	MOSFET N-CH 600V 29A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,288	MOSFET (Metal Oxide)	600V	29A (Tc)	10V	5V @ 250µA	80.4nC @ 10V	2785pF @ 50V	±25V	-	40W (Tc)	110 mOhm @ 14.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
TK32E12N1,S1X	Toshiba Semiconductor and Storage	MOSFET N CH 120V 60A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 60V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 98W (Tc) Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 16A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock11,508	MOSFET (Metal Oxide)	120V	60A (Tc)	10V	4V @ 500µA	34nC @ 10V	2000pF @ 60V	±20V	-	98W (Tc)	13.8 mOhm @ 16A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
MTMF82310BBF	Panasonic Electronic Components	MOSFET N-CH 30V 18A S08 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SO8-F1-B Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock23,508	MOSFET (Metal Oxide)	30V	18A (Ta)	4.5V, 10V	2.5V @ 1mA	-	6000pF @ 10V	±20V	-	-	4.2 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	SO8-F1-B	8-SMD, Flat Lead
SIA408DJ-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 4.5A SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.4W (Ta), 17.9W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	Package: PowerPAK? SC-70-6	Stock360,012	MOSFET (Metal Oxide)	30V	4.5A (Tc)	2.5V, 10V	1.6V @ 250µA	24nC @ 10V	830pF @ 15V	±12V	-	3.4W (Ta), 17.9W (Tc)	36 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Single	PowerPAK? SC-70-6
NTD3055-150T4G	ON Semiconductor	MOSFET N-CH 60V 9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj) Rds On (Max) @ Id, Vgs: 150 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,293,144	MOSFET (Metal Oxide)	60V	9A (Ta)	10V	4V @ 250µA	15nC @ 10V	280pF @ 25V	±20V	-	1.5W (Ta), 28.8W (Tj)	150 mOhm @ 4.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BSL211SPH6327XTSA1	Infineon Technologies	MOSFET P-CH 20V 4.7A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock27,912	MOSFET (Metal Oxide)	20V	4.7A (Ta)	2.5V, 4.5V	1.2V @ 25µA	12.4nC @ 10V	654pF @ 15V	±12V	-	2W (Ta)	67 mOhm @ 4.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	P-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
IPD600N25N3GATMA1	Infineon Technologies	MOSFET N-CH 250V 25A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock73,644	MOSFET (Metal Oxide)	250V	25A (Tc)	10V	4V @ 90µA	29nC @ 10V	2350pF @ 100V	±20V	-	136W (Tc)	60 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SI4884BDY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 16.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 4.45W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock314,016	MOSFET (Metal Oxide)	30V	16.5A (Tc)	4.5V, 10V	3V @ 250µA	35nC @ 10V	1525pF @ 15V	±20V	-	2.5W (Ta), 4.45W (Tc)	9 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BUK7Y6R0-60EX	Nexperia USA Inc.	MOSFET N-CH 60V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4021pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock46,962	MOSFET (Metal Oxide)	60V	100A (Tc)	10V	4V @ 1mA	45.4nC @ 10V	4021pF @ 25V	±20V	-	195W (Tc)	6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
FDS2582	Fairchild/ON Semiconductor	MOSFET N-CH 150V 4.1A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 66 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock556,344	MOSFET (Metal Oxide)	150V	4.1A (Ta)	6V, 10V	4V @ 250µA	25nC @ 10V	1290pF @ 25V	±20V	-	2.5W (Ta)	66 mOhm @ 4.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SUD50N04-8M8P-4GE3	Vishay Siliconix	MOSFET N-CH 40V 14A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 48.1W (Tc) Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock448,212	MOSFET (Metal Oxide)	40V	14A (Ta), 50A (Tc)	4.5V, 10V	3V @ 250µA	56nC @ 10V	2400pF @ 20V	±20V	-	3.1W (Ta), 48.1W (Tc)	8.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
DMN63D1LT-13	Diodes Incorporated	MOSFET N-CH 60V 320MA SOT523 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Stock29,100	MOSFET (Metal Oxide)	60 V	320mA (Ta)	5V, 10V	2.5V @ 1mA	392 nC @ 4.5 V	30 pF @ 25 V	±20V	-	330mW (Ta)	2Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
MSC180SMA120S	Microchip Technology	MOSFET SIC 1200 V 180 MOHM TO-26 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.26V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 1000 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Stock543	SiCFET (Silicon Carbide)	1200 V	21A (Tc)	20V	3.26V @ 500µA	34 nC @ 20 V	510 pF @ 1000 V	+23V, -10V	-	125W (Tc)	225mOhm @ 8A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
DMT67M8LCGQ-7	Diodes Incorporated	MOSFET N-CH 60V 16A/64.6A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 64.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: V-DFN3333-8 (Type B) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	16A (Ta), 64.6A (Tc)	4.5V, 10V	2.5V @ 250µA	37.5 nC @ 10 V	2130 pF @ 30 V	±20V	-	900mW (Tc)	5.7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	V-DFN3333-8 (Type B)	8-PowerVDFN
DMP4026SFVWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	8.9A (Ta), 49A (Tc)	4.5V, 10V	1.8V @ 250µA	45.8 nC @ 10 V	2064 pF @ 20 V	±20V	-	1.6W (Ta)	25mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
RJK0366DPA-00-J0	Renesas Electronics Corporation	MOSFET N-CH 30V 25A 8WPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WPAK (3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	25A (Ta)	-	-	6.8 nC @ 10 V	1010 pF @ 10 V	-	-	30W (Tc)	11.1mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	8-WPAK (3)	8-PowerWDFN
IRF7805ZTRPBF-1	Infineon Technologies	MOSFET N-CH 30V 16A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	16A (Ta)	4.5V, 10V	2.25V @ 250µA	27 nC @ 4.5 V	2080 pF @ 15 V	±20V	-	2.5W (Ta)	6.8mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NVTFS6H860NLTAG	onsemi	MOSFET N-CH 80V 8.1A/30A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	8.1A (Ta), 30A (Tc)	4.5V, 10V	2V @ 30µA	12 nC @ 10 V	610 pF @ 40 V	±20V	-	3.1W (Ta), 42W (Tc)	20mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
DMN2058UW-13	Diodes Incorporated	MOSFET N-CH 20V 3.5A SOT323 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock30,000	MOSFET (Metal Oxide)	20 V	3.5A (Ta)	1.8V, 10V	1.2V @ 250µA	7.7 nC @ 10 V	281 pF @ 10 V	±12V	-	500mW (Ta)	42mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323