Page 928 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF520NSTRRPBF
Infineon Technologies

MOSFET N-CH 100V 9.7A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,640
IRFU3709Z-701P
Infineon Technologies

MOSFET N-CH 30V 86A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,944
IRLL1503
Infineon Technologies

MOSFET N-CH 30V 75A SOT223

Package: TO-261-4, TO-261AA

Stock6,160
IRLR024NTRL
Infineon Technologies

MOSFET N-CH 55V 17A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock250,848
JANTXV2N6782U
Microsemi Corporation

MOSFET N-CH 100V 3.5A

Package: 18-BQFN Exposed Pad

Stock3,376
2SK4089LS
ON Semiconductor

MOSFET N-CH 650V 12A TO-220FI

Package: TO-220-3 Full Pack

Stock6,560
IRFBC30AS
Vishay Siliconix

MOSFET N-CH 600V 3.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock12,576
IXKC23N60C5
IXYS

MOSFET N-CH 600V 23A ISOPLUS220

Package: ISOPLUS220?

Stock6,976
AOB10N60L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 10A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,960
NTMFS4927NT1G
ON Semiconductor

MOSFET N-CH 30V 7.9A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock1,239,516
IXTH30N50L2
IXYS

MOSFET N-CH 500V 30A TO-247

Package: TO-247-3

Stock390,000
IRF4905SPBF
Infineon Technologies

MOSFET P-CH 55V 42A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock30,000
IRFS3607TRLPBF
Infineon Technologies

MOSFET N-CH 75V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,184
STB57N65M5
STMicroelectronics

MOSFET N-CH 650V 42A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,848
NX2301P,215
Nexperia USA Inc.

MOSFET P-CH 20V 2A TO-236AB

Package: TO-236-3, SC-59, SOT-23-3

Stock255,840
BSF134N10NJ3GXUMA1
Infineon Technologies

MOSFET N-CH 100V 9A/40A 2WDSON

Package: -

Stock15,000
PJC7439_R1_00001
Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

Package: -

Stock17,478
BSS84-TP
Micro Commercial Co

MOSFET P-CH 50V 130MA SOT23

Package: -

Stock283,068
STD5407NT4G
onsemi

MOSFET N-CH 40V 7.6A/38A DPAK

Package: -

Request a Quote
G75P04D5I
Goford Semiconductor

P-40V,-70A,RD(MAX)<6.5M@-10V,VTH

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF520NSTRRPBF	Infineon Technologies	MOSFET N-CH 100V 9.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,640	MOSFET (Metal Oxide)	100V	9.7A (Tc)	10V	4V @ 250µA	25nC @ 10V	330pF @ 25V	±20V	-	3.8W (Ta), 48W (Tc)	200 mOhm @ 5.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFU3709Z-701P	Infineon Technologies	MOSFET N-CH 30V 86A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,944	MOSFET (Metal Oxide)	30V	86A (Tc)	4.5V, 10V	2.25V @ 250µA	26nC @ 4.5V	2330pF @ 15V	±20V	-	79W (Tc)	6.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRLL1503	Infineon Technologies	MOSFET N-CH 30V 75A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5730pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 140A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock6,160	MOSFET (Metal Oxide)	30V	75A (Ta)	-	4V @ 250µA	200nC @ 10V	5730pF @ 25V	-	-	-	3.3 mOhm @ 140A, 10V	-	Through Hole	SOT-223	TO-261-4, TO-261AA
IRLR024NTRL	Infineon Technologies	MOSFET N-CH 55V 17A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock250,848	MOSFET (Metal Oxide)	55V	17A (Tc)	4V, 10V	2V @ 250µA	15nC @ 5V	480pF @ 25V	±16V	-	45W (Tc)	65 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
JANTXV2N6782U	Microsemi Corporation	MOSFET N-CH 100V 3.5A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 610 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-BQFN Exposed Pad	Package: 18-BQFN Exposed Pad	Stock3,376	MOSFET (Metal Oxide)	100V	3.5A (Tc)	10V	4V @ 250µA	8.1nC @ 10V	-	±20V	-	800mW (Ta), 15W (Tc)	610 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	18-ULCC (9.14x7.49)	18-BQFN Exposed Pad
2SK4089LS	ON Semiconductor	MOSFET N-CH 650V 12A TO-220FI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 45.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 720 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FI(LS) Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,560	MOSFET (Metal Oxide)	650V	8.5A (Tc)	10V	-	45.4nC @ 10V	1200pF @ 30V	±30V	-	2W (Ta), 40W (Tc)	720 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220FI(LS)	TO-220-3 Full Pack
IRFBC30AS	Vishay Siliconix	MOSFET N-CH 600V 3.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,576	MOSFET (Metal Oxide)	600V	3.6A (Tc)	10V	4.5V @ 250µA	23nC @ 10V	510pF @ 25V	±30V	-	74W (Tc)	2.2 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXKC23N60C5	IXYS	MOSFET N-CH 600V 23A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock6,976	MOSFET (Metal Oxide)	600V	23A (Tc)	10V	3.9V @ 1.2mA	80nC @ 10V	2800pF @ 100V	±20V	Super Junction	-	100 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
AOB10N60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,960	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4.5V @ 250µA	40nC @ 10V	1600pF @ 25V	±30V	-	250W (Tc)	750 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTMFS4927NT1G	ON Semiconductor	MOSFET N-CH 30V 7.9A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 920mW (Ta), 20.8W (Tc) Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock1,239,516	MOSFET (Metal Oxide)	30V	7.9A (Ta), 38A (Tc)	4.5V, 10V	2.2V @ 250µA	16nC @ 10V	913pF @ 15V	±20V	-	920mW (Ta), 20.8W (Tc)	7.3 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
IXTH30N50L2	IXYS	MOSFET N-CH 500V 30A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	500V	30A (Tc)	10V	4.5V @ 250µA	240nC @ 10V	8100pF @ 25V	±20V	-	400W (Tc)	200 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IRF4905SPBF	Infineon Technologies	MOSFET P-CH 55V 42A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock30,000	MOSFET (Metal Oxide)	55V	42A (Tc)	10V	4V @ 250µA	180nC @ 10V	3500pF @ 25V	±20V	-	170W (Tc)	20 mOhm @ 42A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS3607TRLPBF	Infineon Technologies	MOSFET N-CH 75V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3070pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 46A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,184	MOSFET (Metal Oxide)	75V	80A (Tc)	10V	4V @ 100µA	84nC @ 10V	3070pF @ 50V	±20V	-	140W (Tc)	9 mOhm @ 46A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB57N65M5	STMicroelectronics	MOSFET N-CH 650V 42A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 63 mOhm @ 21A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,848	MOSFET (Metal Oxide)	650V	42A (Tc)	10V	5V @ 250µA	98nC @ 10V	4200pF @ 100V	±25V	-	250W (Tc)	63 mOhm @ 21A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NX2301P,215	Nexperia USA Inc.	MOSFET P-CH 20V 2A TO-236AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 400mW (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock255,840	MOSFET (Metal Oxide)	20V	2A (Ta)	2.5V, 4.5V	1.1V @ 250µA	6nC @ 4.5V	380pF @ 6V	±8V	-	400mW (Ta), 2.8W (Tc)	120 mOhm @ 1A, 4.5V	150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
BSF134N10NJ3GXUMA1	Infineon Technologies	MOSFET N-CH 100V 9A/40A 2WDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M™ Package / Case: 3-WDSON	Package: -	Stock15,000	MOSFET (Metal Oxide)	100 V	9A (Ta), 40A (Tc)	6V, 10V	3.5V @ 40µA	30 nC @ 10 V	2300 pF @ 50 V	±20V	-	2.2W (Ta), 43W (Tc)	13.4mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	MG-WDSON-2, CanPAK M™	3-WDSON
PJC7439_R1_00001	Panjit International Inc.	60V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock17,478	MOSFET (Metal Oxide)	60 V	250mA (Ta)	2.5V, 10V	2.5V @ 250µA	1.1 nC @ 4.5 V	51 pF @ 25 V	±20V	-	350mW (Ta)	4Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
BSS84-TP	Micro Commercial Co	MOSFET P-CH 50V 130MA SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 130mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock283,068	MOSFET (Metal Oxide)	50 V	130mA (Tj)	5V, 10V	2V @ 250µA	-	30 pF @ 25 V	±20V	-	225mW	8Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
STD5407NT4G	onsemi	MOSFET N-CH 40V 7.6A/38A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 32 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	7.6A (Ta), 38A (Tc)	5V, 10V	3.5V @ 250µA	20 nC @ 10 V	1000 pF @ 32 V	±20V	-	2.9W (Ta), 75W (Tc)	26mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
G75P04D5I	Goford Semiconductor	P-40V,-70A,RD(MAX)<6.5M@-10V,VTH FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6414 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (4.9x5.75) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	70A (Tc)	4.5V, 10V	2.5V @ 250µA	106 nC @ 10 V	6414 pF @ 20 V	±20V	-	150W (Tc)	6.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (4.9x5.75)	8-PowerTDFN
PMCB60XNEAYL	Nexperia USA Inc.	SMALL SIGNAL MOSFET FOR MOBILE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 480mW (Ta), 7W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DSN1006-3 Package / Case: 3-XFDFN	Package: -	Stock28,845	MOSFET (Metal Oxide)	30 V	3.5A (Ta)	1.8V, 4.5V	1.1V @ 250µA	7.5 nC @ 4.5 V	420 pF @ 15 V	±12V	-	480mW (Ta), 7W (Tc)	55mOhm @ 3.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DSN1006-3	3-XFDFN
DMT10H9M9SPSW-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI50 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM3J143TU-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 5.5A UFM FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V Vgs (Max): +6V, -8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Lead	Package: -	Stock15,090	MOSFET (Metal Oxide)	20 V	5.5A (Ta)	1.5V, 4.5V	1V @ 1mA	12.8 nC @ 4.5 V	840 pF @ 10 V	+6V, -8V	-	500mW (Ta)	29.8mOhm @ 3A, 4.5V	150°C	Surface Mount	UFM	3-SMD, Flat Lead
CC-CN-23-0123	CoolCAD	SiC MOSFET 20A 1200V TO-247-3 FET Type: - Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 200 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	SiCFET (Silicon Carbide)	-	20A (Ta)	-	2.4V @ 5mA	16 nC @ 5 V	810 pF @ 200 V	-	-	-	85mOhm @ 10A, 15V	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
AOWF190A60	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262F Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	4V @ 250µA	34 nC @ 10 V	1935 pF @ 100 V	±20V	-	27W (Tc)	190mOhm @ 7.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262F	TO-262-3 Long Leads, I2PAK, TO-262AA
IRF122	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AA, TO-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	8A (Tc)	10V	4V @ 250µA	15 nC @ 10 V	350 pF @ 25 V	±20V	-	60W (Tc)	360mOhm @ 5.6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3	TO-204AA, TO-3
GSGP03150	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 150A, 30V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3372 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PPAK (4.9x5.8) Package / Case: 8-PowerTDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	30 V	150A (Tc)	4.5V, 10V	2.2V @ 250µA	55 nC @ 10 V	3372 pF @ 15 V	±20V	-	85W (Tc)	1.9mOhm @ 75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PPAK (4.9x5.8)	8-PowerTDFN
NX7002AKAR	Nexperia USA Inc.	MOSFET N-CH 60V TO-236AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 265mW (Ta), 1.33W (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock18,000	MOSFET (Metal Oxide)	60 V	190mA (Ta)	-	2.1V @ 250µA	0.43 nC @ 4.5 V	17 pF @ 10 V	-	-	265mW (Ta), 1.33W (Tc)	4.5Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3