Page 958 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRF6218S
Infineon Technologies

MOSFET P-CH 150V 27A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,256
IRFR3504TRPBF
Infineon Technologies

MOSFET N-CH 40V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock29,292
IRF6646TR1PBF
Infineon Technologies

MOSFET N-CH 80V 12A DIRECTFET

Package: DirectFET? Isometric MN

Stock14,760
GP1M008A050PG
Global Power Technologies Group

MOSFET N-CH 500V 8A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,552
TPC8115(TE12L,Q,M)
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 10A SOP8 2-6J1B

Package: 8-SOIC (0.173", 4.40mm Width)

Stock5,136
AON6232
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 22A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock60,240
FDD9411L_F085
Fairchild/ON Semiconductor

PT8N 40V N-CHANNEL LL POWERTRENC

Package: -

Stock7,168
C2M0080120D
Cree/Wolfspeed

MOSFET N-CH 1200V 31.6A TO247

Package: TO-247-3

Stock7,104
FDB12N50FTM_WS
Fairchild/ON Semiconductor

MOSFET N-CH 500V 11.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,288
FQB12P20TM
Fairchild/ON Semiconductor

MOSFET P-CH 200V 11.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock17,772
IRFR9N20DTRPBF
Infineon Technologies

MOSFET N-CH 200V 9.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,040
FDA28N50F
Fairchild/ON Semiconductor

MOSFET N-CH 500V 28A TO-3PN

Package: TO-3P-3, SC-65-3

Stock352,128
IRLR2908PBF
Infineon Technologies

MOSFET N-CH 80V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock390,468
FDS4141
Fairchild/ON Semiconductor

MOSFET P-CH 40V 10.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock421,752
MTP1N50E
onsemi

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
CP773-CMPDM302PH-CT
Central Semiconductor Corp

MOSFET P-CH 30V 2.4A DIE

Package: -

Request a Quote
FDP8443-F085
onsemi

MOSFET N-CH 40V 20A/80A TO220-3

Package: -

Request a Quote
RQ6A050ZPTR
Rohm Semiconductor

MOSFET P-CH 12V 5A TSMT6

Package: -

Stock8,814
APT12060LVFRG
Microchip Technology

MOSFET N-CH 1200V 20A TO264

Package: -

Request a Quote
2SK2532-TL-E
onsemi

NCH 10V DRIVE SERIES

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRF6218S	Infineon Technologies	MOSFET P-CH 150V 27A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,256	MOSFET (Metal Oxide)	150V	27A (Tc)	10V	5V @ 250µA	110nC @ 10V	2210pF @ 25V	±20V	-	250W (Tc)	150 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR3504TRPBF	Infineon Technologies	MOSFET N-CH 40V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock29,292	MOSFET (Metal Oxide)	40V	30A (Tc)	10V	4V @ 250µA	71nC @ 10V	2150pF @ 25V	±20V	-	140W (Tc)	9.2 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF6646TR1PBF	Infineon Technologies	MOSFET N-CH 80V 12A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MN Package / Case: DirectFET? Isometric MN	Package: DirectFET? Isometric MN	Stock14,760	MOSFET (Metal Oxide)	80V	12A (Ta), 68A (Tc)	10V	4.9V @ 150µA	50nC @ 10V	2060pF @ 25V	±20V	-	2.8W (Ta), 89W (Tc)	9.5 mOhm @ 12A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MN	DirectFET? Isometric MN
GP1M008A050PG	Global Power Technologies Group	MOSFET N-CH 500V 8A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 937pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,552	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	5V @ 250µA	21nC @ 10V	937pF @ 25V	±30V	-	120W (Tc)	850 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
TPC8115(TE12L,Q,M)	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 10A SOP8 2-6J1B FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	Package: 8-SOIC (0.173", 4.40mm Width)	Stock5,136	MOSFET (Metal Oxide)	20V	10A (Ta)	1.8V, 4.5V	1.2V @ 200µA	115nC @ 5V	9130pF @ 10V	±8V	-	1W (Ta)	10 mOhm @ 5A, 4.5V	150°C (TJ)	Surface Mount	8-SOP (5.5x6.0)	8-SOIC (0.173", 4.40mm Width)
AON6232	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 40V 22A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock60,240	MOSFET (Metal Oxide)	40V	22A (Ta), 85A (Tc)	4.5V, 10V	2.3V @ 250µA	51nC @ 10V	3800pF @ 20V	±20V	-	2.3W (Ta), 83W (Tc)	2.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
FDD9411L_F085	Fairchild/ON Semiconductor	PT8N 40V N-CHANNEL LL POWERTRENC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,168	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
C2M0080120D	Cree/Wolfspeed	MOSFET N-CH 1200V 31.6A TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,104	SiCFET (Silicon Carbide)	1200V	36A (Tc)	20V	4V @ 5mA	62nC @ 5V	950pF @ 1000V	+25V, -10V	-	192W (Tc)	98 mOhm @ 20A, 20V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
FDB12N50FTM_WS	Fairchild/ON Semiconductor	MOSFET N-CH 500V 11.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,288	MOSFET (Metal Oxide)	500V	11.5A (Tc)	10V	5V @ 250µA	30nC @ 10V	1395pF @ 25V	±30V	-	165W (Tc)	700 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB12P20TM	Fairchild/ON Semiconductor	MOSFET P-CH 200V 11.5A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 470 mOhm @ 5.75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock17,772	MOSFET (Metal Oxide)	200V	11.5A (Tc)	10V	5V @ 250µA	40nC @ 10V	1200pF @ 25V	±30V	-	3.13W (Ta), 120W (Tc)	470 mOhm @ 5.75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR9N20DTRPBF	Infineon Technologies	MOSFET N-CH 200V 9.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,040	MOSFET (Metal Oxide)	200V	9.4A (Tc)	10V	5.5V @ 250µA	27nC @ 10V	560pF @ 25V	±30V	-	86W (Tc)	380 mOhm @ 5.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDA28N50F	Fairchild/ON Semiconductor	MOSFET N-CH 500V 28A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5387pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock352,128	MOSFET (Metal Oxide)	500V	28A (Tc)	10V	5V @ 250µA	105nC @ 10V	5387pF @ 25V	±30V	-	310W (Tc)	175 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
IRLR2908PBF	Infineon Technologies	MOSFET N-CH 80V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock390,468	MOSFET (Metal Oxide)	80V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	33nC @ 4.5V	1890pF @ 25V	±16V	-	120W (Tc)	28 mOhm @ 23A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDS4141	Fairchild/ON Semiconductor	MOSFET P-CH 40V 10.8A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock421,752	MOSFET (Metal Oxide)	40V	10.8A (Ta)	4.5V, 10V	3V @ 250µA	49nC @ 10V	2670pF @ 20V	±20V	-	5W (Ta)	13 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
MTP1N50E	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CP773-CMPDM302PH-CT	Central Semiconductor Corp	MOSFET P-CH 30V 2.4A DIE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V Vgs (Max): 12V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	2.4A (Ta)	2.5V, 4.5V	1.4V @ 250µA	9.6 nC @ 5 V	800 pF @ 10 V	12V	-	-	91mOhm @ 1.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
FDP8443-F085	onsemi	MOSFET N-CH 40V 20A/80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9310 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	20A (Ta), 80A (Tc)	10V	4V @ 250µA	185 nC @ 10 V	9310 pF @ 25 V	±20V	-	188W (Tc)	3.5mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
RQ6A050ZPTR	Rohm Semiconductor	MOSFET P-CH 12V 5A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock8,814	MOSFET (Metal Oxide)	12 V	5A (Ta)	1.5V, 4.5V	1V @ 1mA	35 nC @ 4.5 V	2850 pF @ 6 V	±10V	-	950mW (Ta)	26mOhm @ 5A, 4.5V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
APT12060LVFRG	Microchip Technology	MOSFET N-CH 1200V 20A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 600mOhm @ 10A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	20A (Tc)	-	4V @ 1mA	650 nC @ 10 V	9500 pF @ 25 V	-	-	-	600mOhm @ 10A, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
2SK2532-TL-E	onsemi	NCH 10V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PSMNR98-25YLEX	Nexperia USA Inc.	PSMNR98-25YLE/SOT669/LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 255A (Ta) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 2.2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6249 pF @ 12 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 192W (Ta) Rds On (Max) @ Id, Vgs: 1.11mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Stock2,580	MOSFET (Metal Oxide)	25 V	255A (Ta)	7V, 10V	2.2V @ 2mA	98 nC @ 10 V	6249 pF @ 12 V	±20V	-	192W (Ta)	1.11mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
AUIRL3705N	Infineon Technologies	AUIRL3705 - 55V-60V N-CHANNEL AU FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	89A (Tc)	-	2V @ 250µA	98 nC @ 5 V	3600 pF @ 25 V	-	-	170W (Tc)	10mOhm @ 46A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SIHD7N60ET4-GE3	Vishay Siliconix	MOSFET N-CH 600V 7A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	4V @ 250µA	40 nC @ 10 V	680 pF @ 100 V	±30V	-	78W (Tc)	600mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD60R1K0PFD7SAUMA1	Infineon Technologies	CONSUMER PG-TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock1,284	MOSFET (Metal Oxide)	600 V	4.7A (Tc)	10V	4.5V @ 50µA	6 nC @ 10 V	230 pF @ 400 V	±20V	-	26W (Tc)	1Ohm @ 1A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTY03N90PHV	IXYS	MOSFET N-CH TO252AA FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AM2323P-T1-PF-ML	MOSLEADER	Single P -20V 2.3A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB60R600C6ATMA1	Infineon Technologies	MOSFET N-CH 600V 7.3A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	3.5V @ 200µA	20.5 nC @ 10 V	440 pF @ 100 V	±20V	-	63W (Tc)	600mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IQE065N10NM5CGATMA1	Infineon Technologies	TRENCH >=100V PG-TTFN-9 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 48µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PG-TTFN-9-1 Package / Case: 8-PowerTDFN	Package: -	Stock29,790	MOSFET (Metal Oxide)	100 V	14A (Ta), 85A (Tc)	6V, 10V	3.8V @ 48µA	42 nC @ 10 V	3000 pF @ 50 V	±20V	-	2.5W (Ta), 100W (Tc)	6.5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PG-TTFN-9-1	8-PowerTDFN