Page 962 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPI26CNE8N G
Infineon Technologies

MOSFET N-CH 85V 35A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,352
IPI09N03LA
Infineon Technologies

MOSFET N-CH 25V 50A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,152
IRF7403PBF
Infineon Technologies

MOSFET N-CH 30V 8.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock17,040
3N163-E3
Vishay Siliconix

MOSFET P-CH 40V 50MA TO-72

Package: TO-206AF, TO-72-4 Metal Can

Stock3,456
SUP75N03-04-E3
Vishay Siliconix

MOSFET N-CH 30V 75A TO220AB

Package: TO-220-3

Stock60,012
SI3456BDV-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 4.5A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock1,872,600
IXTA200N085T
IXYS

MOSFET N-CH 85V 200A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,432
IXFV26N50P
IXYS

MOSFET N-CH 500V 26A PLUS220

Package: TO-220-3, Short Tab

Stock6,800
FQP18N20V2
Fairchild/ON Semiconductor

MOSFET N-CH 200V 18A TO-220

Package: TO-220-3

Stock3,936
IRFU9220
Vishay Siliconix

MOSFET P-CH 200V 3.6A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock16,788
IRFSL4310PBF
Infineon Technologies

MOSFET N-CH 100V 130A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,056
IXFN39N90
IXYS

MOSFET N-CH 900V 39A SOT-227B

Package: SOT-227-4, miniBLOC

Stock7,840
NVMFS6B05NLT3G
ON Semiconductor

MOSFET N-CH 100V 17A 5DFN

Package: 8-PowerTDFN

Stock2,000
SI3456DDV-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 6.3A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock461,832
STL9N80K5
STMicroelectronics

MOSFET N-CH 800V 7A POWERFLAT

Package: 8-PowerVDFN

Stock5,440
PMZ950UPELYL
Nexperia USA Inc.

20 V, P-CHANNEL TRENCH MOSFET

Package: SC-101, SOT-883

Stock7,600
SI7810DN-T1-E3
Vishay Siliconix

MOSFET N-CH 100V 3.4A 1212-8

Package: PowerPAK? 1212-8

Stock517,392
APT21M100J
Microsemi Corporation

MOSFET N-CH 1000V 21A SOT-227

Package: SOT-227-4, miniBLOC

Stock6,976
CSD18532NQ5BT
Texas Instruments

MOSFET N-CH 60V 100A

Package: 8-PowerTDFN

Stock2,192
IRF740SPBF
Vishay Siliconix

MOSFET N-CH 400V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,976

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPI26CNE8N G	Infineon Technologies	MOSFET N-CH 85V 35A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 39µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,352	MOSFET (Metal Oxide)	85V	35A (Tc)	10V	4V @ 39µA	31nC @ 10V	2070pF @ 40V	±20V	-	71W (Tc)	26 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IPI09N03LA	Infineon Technologies	MOSFET N-CH 25V 50A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1642pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,152	MOSFET (Metal Oxide)	25V	50A (Tc)	4.5V, 10V	2V @ 20µA	13nC @ 5V	1642pF @ 15V	±20V	-	63W (Tc)	9.2 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF7403PBF	Infineon Technologies	MOSFET N-CH 30V 8.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock17,040	MOSFET (Metal Oxide)	30V	8.5A (Ta)	4.5V, 10V	1V @ 250µA	57nC @ 10V	1200pF @ 25V	±20V	-	2.5W (Ta)	22 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
3N163-E3	Vishay Siliconix	MOSFET P-CH 40V 50MA TO-72 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 5V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 375mW (Ta) Rds On (Max) @ Id, Vgs: 250 Ohm @ 100µA, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-72 Package / Case: TO-206AF, TO-72-4 Metal Can	Package: TO-206AF, TO-72-4 Metal Can	Stock3,456	MOSFET (Metal Oxide)	40V	50mA (Ta)	20V	5V @ 10µA	-	3.5pF @ 15V	±30V	-	375mW (Ta)	250 Ohm @ 100µA, 20V	-55°C ~ 150°C (TJ)	Through Hole	TO-72	TO-206AF, TO-72-4 Metal Can
SUP75N03-04-E3	Vishay Siliconix	MOSFET N-CH 30V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10742pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 187W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock60,012	MOSFET (Metal Oxide)	30V	75A (Tc)	4.5V, 10V	3V @ 250µA	250nC @ 10V	10742pF @ 25V	±20V	-	3.7W (Ta), 187W (Tc)	4 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SI3456BDV-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 4.5A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,872,600	MOSFET (Metal Oxide)	30V	4.5A (Ta)	4.5V, 10V	3V @ 250µA	13nC @ 10V	-	±20V	-	1.1W (Ta)	35 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
IXTA200N085T	IXYS	MOSFET N-CH 85V 200A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,432	MOSFET (Metal Oxide)	85V	200A (Tc)	10V	4V @ 250µA	152nC @ 10V	7600pF @ 25V	±20V	-	480W (Tc)	5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFV26N50P	IXYS	MOSFET N-CH 500V 26A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock6,800	MOSFET (Metal Oxide)	500V	26A (Tc)	10V	5.5V @ 4mA	60nC @ 10V	3600pF @ 25V	±30V	-	400W (Tc)	230 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS220	TO-220-3, Short Tab
FQP18N20V2	Fairchild/ON Semiconductor	MOSFET N-CH 200V 18A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 123W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock3,936	MOSFET (Metal Oxide)	200V	18A (Tc)	10V	5V @ 250µA	26nC @ 10V	1080pF @ 25V	±30V	-	123W (Tc)	140 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IRFU9220	Vishay Siliconix	MOSFET P-CH 200V 3.6A I-PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock16,788	MOSFET (Metal Oxide)	200V	3.6A (Tc)	10V	4V @ 250µA	20nC @ 10V	340pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IRFSL4310PBF	Infineon Technologies	MOSFET N-CH 100V 130A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7670pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,056	MOSFET (Metal Oxide)	100V	130A (Tc)	10V	4V @ 250µA	250nC @ 10V	7670pF @ 50V	±20V	-	300W (Tc)	7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IXFN39N90	IXYS	MOSFET N-CH 900V 39A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 39A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,840	MOSFET (Metal Oxide)	900V	39A	10V	5V @ 8mA	390nC @ 10V	9200pF @ 25V	±20V	-	694W (Tc)	220 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
NVMFS6B05NLT3G	ON Semiconductor	MOSFET N-CH 100V 17A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 165W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,000	MOSFET (Metal Oxide)	100V	-	4.5V, 10V	3V @ 250µA	6.8nC @ 10V	3980pF @ 25V	±16V	-	3.8W (Ta), 165W (Tc)	5.6 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
SI3456DDV-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 6.3A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock461,832	MOSFET (Metal Oxide)	30V	6.3A (Tc)	4.5V, 10V	3V @ 250µA	9nC @ 10V	325pF @ 15V	±20V	-	1.7W (Ta), 2.7W (Tc)	40 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
STL9N80K5	STMicroelectronics	MOSFET N-CH 800V 7A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 7A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,440	MOSFET (Metal Oxide)	800V	7A	10V	-	-	-	-	-	-	-	-	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
PMZ950UPELYL	Nexperia USA Inc.	20 V, P-CHANNEL TRENCH MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: SC-101, SOT-883	Package: SC-101, SOT-883	Stock7,600	MOSFET (Metal Oxide)	20V	500mA (Ta)	1.5V, 4.5V	950mV @ 250µA	2.1nC @ 4.5V	43pF @ 10V	±8V	-	360mW (Ta), 2.7W (Tc)	1.4 Ohm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1006-3	SC-101, SOT-883
SI7810DN-T1-E3	Vishay Siliconix	MOSFET N-CH 100V 3.4A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 62 mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock517,392	MOSFET (Metal Oxide)	100V	3.4A (Ta)	6V, 10V	4.5V @ 250µA	17nC @ 10V	-	±20V	-	1.5W (Ta)	62 mOhm @ 5.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
APT21M100J	Microsemi Corporation	MOSFET N-CH 1000V 21A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 21A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 462W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,976	MOSFET (Metal Oxide)	1000V	21A	10V	5V @ 2.5mA	260nC @ 10V	8500pF @ 25V	±30V	-	462W (Tc)	380 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
CSD18532NQ5BT	Texas Instruments	MOSFET N-CH 60V 100A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5340pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,192	MOSFET (Metal Oxide)	60V	100A (Ta)	6V, 10V	3.4V @ 250µA	64nC @ 10V	5340pF @ 30V	±20V	-	3.1W (Ta), 156W (Tc)	3.4 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
IRF740SPBF	Vishay Siliconix	MOSFET N-CH 400V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,976	MOSFET (Metal Oxide)	400V	10A (Tc)	10V	4V @ 250µA	63nC @ 10V	1400pF @ 25V	±20V	-	3.1W (Ta), 125W (Tc)	550 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
2N7002T-7-F	Diodes Incorporated	MOSFET N-CH 60V 115MA SOT-523 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: SOT-523	Stock1,799,712	MOSFET (Metal Oxide)	60V	115mA (Ta)	5V, 10V	2V @ 250µA	-	50pF @ 25V	±20V	-	150mW (Ta)	7.5 Ohm @ 50mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
SI6426DQ	Fairchild Semiconductor	SMALL SIGNAL N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	5.4A (Ta)	2.5V, 4.5V	1.5V @ 250µA	10 nC @ 4.5 V	710 pF @ 10 V	±8V	-	1.1W (Ta)	35mOhm @ 5.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
NVXK2VR40WDT2	onsemi	APM32 SIC POWER MODULE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJD80N03_L2_00001	Panjit International Inc.	30V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	15A (Ta), 80A (Tc)	4.5V, 10V	2.5V @ 250µA	12 nC @ 4.5 V	1323 pF @ 25 V	±20V	-	2W (Ta), 55W (Tc)	6mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
2SK3230B-T1-A	Renesas Electronics Corporation	N-CHANNEL SMALL SIGNAL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PXN018-30QLJ	Nexperia USA Inc.	PXN018-30QL/SOT8002/MLPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 19.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 10.9W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MLPAK33 Package / Case: 8-PowerVDFN	Package: -	Stock840	MOSFET (Metal Oxide)	30 V	7.5A (Ta), 19.2A (Tc)	4.5V, 10V	2.5V @ 250µA	10.8 nC @ 10 V	447 pF @ 15 V	±20V	-	1.7W (Ta), 10.9W (Tc)	18mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	MLPAK33	8-PowerVDFN
MCG30N03A-TP	Micro Commercial Co	MOSFET N-CH 30V 30A DFN3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333 Package / Case: 8-VDFN Exposed Pad	Package: -	Stock11,409	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	28 nC @ 10 V	1020 pF @ 15 V	±20V	-	20W (Tc)	10mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN3333	8-VDFN Exposed Pad
BSS127IXTSA1	Infineon Technologies	SMALL SIGNAL MOSFETS PG-SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock20,598	MOSFET (Metal Oxide)	600 V	21mA (Ta)	4.5V, 10V	2.6V @ 8µA	0.65 nC @ 10 V	21 pF @ 25 V	±20V	-	500mW (Ta)	500Ohm @ 16mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT-23-3	TO-236-3, SC-59, SOT-23-3