Page 975 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPI26CN10N G
Infineon Technologies

MOSFET N-CH 100V 35A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,656
IRFR12N25DCTRLP
Infineon Technologies

MOSFET N-CH 250V 14A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,112
IRF3709ZSTRL
Infineon Technologies

MOSFET N-CH 30V 87A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,760
BUK9230-80EJ
Nexperia USA Inc.

MOSFET N-CH 80V DPAK

Package: -

Stock4,016
IXFH80N085
IXYS

MOSFET N-CH 85V 80A TO-247

Package: TO-247-3

Stock2,192
FQB17P10TM
Fairchild/ON Semiconductor

MOSFET P-CH 100V 16.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock14,052
IPI80N04S2H4AKSA2
Infineon Technologies

MOSFET N-CH 40V 80A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,472
IRLZ14STRLPBF
Vishay Siliconix

MOSFET N-CH 60V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,488
DMT6008LFG-13
Diodes Incorporated

MOSFET N-CH 60V 13A PWDI3333-8

Package: 8-PowerWDFN

Stock7,136
IXFH80N65X2
IXYS

MOSFET N-CH 650V 80A TO-247

Package: TO-247-3

Stock7,808
STP150N10F7
STMicroelectronics

MOSFET N-CH 100V 110A TO-220

Package: TO-220-3

Stock17,352
NTR4101PT1G
ON Semiconductor

MOSFET P-CH 20V 1.8A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock9,510,468
EPC2020ENGR
EPC

TRANS GAN 60V 60A BUMPED DIE

Package: Die

Stock5,840
RSJ400N06TL
Rohm Semiconductor

MOSFET N-CH 60V 40A LTPS

Package: SC-83

Stock13,152
SIA468DJ-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 37.8A SC70-6

Package: PowerPAK? SC-70-6

Stock4,880
FDS5690
Fairchild/ON Semiconductor

MOSFET N-CH 60V 7A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock379,728
AOD4189
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 40V 40A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock137,352
RD3U080AAFRATL
Rohm Semiconductor

250V 8A TO-252, AUTOMOTIVE POWER

Package: -

Stock14,727
NP32N055SDE-E1-AZ
Renesas Electronics Corporation

TRANSISTOR

Package: -

Request a Quote
CMLDM7120G-TR-PBFREE
Central Semiconductor Corp

MOSFET N-CH 20V 1A SOT563

Package: -

Stock6,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPI26CN10N G	Infineon Technologies	MOSFET N-CH 100V 35A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 39µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,656	MOSFET (Metal Oxide)	100V	35A (Tc)	10V	4V @ 39µA	31nC @ 10V	2070pF @ 50V	±20V	-	71W (Tc)	26 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFR12N25DCTRLP	Infineon Technologies	MOSFET N-CH 250V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,112	MOSFET (Metal Oxide)	250V	14A (Tc)	10V	5V @ 250µA	35nC @ 10V	810pF @ 25V	±30V	-	144W (Tc)	260 mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF3709ZSTRL	Infineon Technologies	MOSFET N-CH 30V 87A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,760	MOSFET (Metal Oxide)	30V	87A (Tc)	4.5V, 10V	2.25V @ 250µA	26nC @ 4.5V	2130pF @ 15V	±20V	-	79W (Tc)	6.3 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK9230-80EJ	Nexperia USA Inc.	MOSFET N-CH 80V DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,016	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFH80N085	IXYS	MOSFET N-CH 85V 80A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock2,192	MOSFET (Metal Oxide)	85V	80A (Tc)	10V	4V @ 4mA	180nC @ 10V	4800pF @ 25V	±20V	-	300W (Tc)	9 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
FQB17P10TM	Fairchild/ON Semiconductor	MOSFET P-CH 100V 16.5A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 8.25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,052	MOSFET (Metal Oxide)	100V	16.5A (Tc)	10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	±30V	-	3.75W (Ta), 100W (Tc)	190 mOhm @ 8.25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPI80N04S2H4AKSA2	Infineon Technologies	MOSFET N-CH 40V 80A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,472	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	148nC @ 10V	4400pF @ 25V	±20V	-	300W (Tc)	3.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IRLZ14STRLPBF	Vishay Siliconix	MOSFET N-CH 60V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,488	MOSFET (Metal Oxide)	60V	10A (Tc)	4V, 5V	2V @ 250µA	8.4nC @ 5V	400pF @ 25V	±10V	-	3.7W (Ta), 43W (Tc)	200 mOhm @ 6A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMT6008LFG-13	Diodes Incorporated	MOSFET N-CH 60V 13A PWDI3333-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2713pF @ 30V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock7,136	MOSFET (Metal Oxide)	60V	13A (Ta), 60A (Tc)	4.5V, 10V	2V @ 250µA	50.4nC @ 10V	2713pF @ 30V	±12V	-	2.2W (Ta), 41W (Tc)	7.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
IXFH80N65X2	IXYS	MOSFET N-CH 650V 80A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8245pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,808	MOSFET (Metal Oxide)	650V	80A (Tc)	10V	5.5V @ 4mA	143nC @ 10V	8245pF @ 25V	±30V	-	890W (Tc)	40 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STP150N10F7	STMicroelectronics	MOSFET N-CH 100V 110A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8115pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock17,352	MOSFET (Metal Oxide)	100V	110A (Tc)	10V	4.5V @ 250µA	117nC @ 10V	8115pF @ 50V	±20V	-	250W (Tc)	4.2 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
NTR4101PT1G	ON Semiconductor	MOSFET P-CH 20V 1.8A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 420mW (Ta) Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock9,510,468	MOSFET (Metal Oxide)	20V	1.8A (Ta)	1.8V, 4.5V	1.2V @ 250µA	8.5nC @ 4.5V	675pF @ 10V	±8V	-	420mW (Ta)	85 mOhm @ 1.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
EPC2020ENGR	EPC	TRANS GAN 60V 60A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 30V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 31A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: Die	Stock5,840	GaNFET (Gallium Nitride)	60V	60A (Ta)	5V	2.5V @ 16mA	16nC @ 5V	1800pF @ 30V	+6V, -4V	-	-	2.2 mOhm @ 31A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
RSJ400N06TL	Rohm Semiconductor	MOSFET N-CH 60V 40A LTPS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 40A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock13,152	MOSFET (Metal Oxide)	60V	40A (Ta)	10V	3V @ 1mA	52nC @ 10V	2400pF @ 10V	±20V	-	50W (Tc)	16 mOhm @ 40A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
SIA468DJ-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 37.8A SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 15V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 19W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	Package: PowerPAK? SC-70-6	Stock4,880	MOSFET (Metal Oxide)	30V	37.8A (Tc)	4.5V, 10V	2.4V @ 250µA	16nC @ 4.5V	1290pF @ 15V	+20V, -16V	-	19W (Tc)	8.4 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Single	PowerPAK? SC-70-6
FDS5690	Fairchild/ON Semiconductor	MOSFET N-CH 60V 7A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1107pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock379,728	MOSFET (Metal Oxide)	60V	7A (Ta)	6V, 10V	4V @ 250µA	32nC @ 10V	1107pF @ 30V	±20V	-	2.5W (Ta)	28 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AOD4189	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 40V 40A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock137,352	MOSFET (Metal Oxide)	40V	40A (Tc)	4.5V, 10V	3V @ 250µA	41nC @ 10V	1870pF @ 20V	±20V	-	2.5W (Ta), 62.5W (Tc)	22 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
RD3U080AAFRATL	Rohm Semiconductor	250V 8A TO-252, AUTOMOTIVE POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock14,727	MOSFET (Metal Oxide)	250 V	8A (Tc)	10V	5V @ 1mA	25 nC @ 10 V	1440 pF @ 25 V	±30V	-	85W (Tc)	300mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
NP32N055SDE-E1-AZ	Renesas Electronics Corporation	TRANSISTOR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	32A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
CMLDM7120G-TR-PBFREE	Central Semiconductor Corp	MOSFET N-CH 20V 1A SOT563 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V Vgs (Max): 8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-563 Package / Case: SOT-563, SOT-666	Package: -	Stock6,000	MOSFET (Metal Oxide)	20 V	1A (Ta)	1.5V, 4V	1.2V @ 1mA	2.4 nC @ 4.5 V	220 pF @ 10 V	8V	-	150mW (Ta)	100mOhm @ 500mA, 4.5V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563	SOT-563, SOT-666
FDD8444-F085	onsemi	MOSFET N-CH 40V 145A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 153W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	145A (Tc)	10V	4V @ 250µA	116 nC @ 10 V	6195 pF @ 25 V	±20V	-	153W (Tc)	5.2mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFA90N20X3	IXYS	MOSFET N-CH 200V 90A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock48	MOSFET (Metal Oxide)	200 V	90A (Tc)	10V	4.5V @ 1.5mA	78 nC @ 10 V	5420 pF @ 25 V	±20V	-	390W (Tc)	12.8mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
G60N10T	Goford Semiconductor	MOSFET N-CH 100V 60A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 132W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	-	60A (Tc)	4.5V, 10V	2.5V @ 250µA	-	-	±20V	-	132W (Tc)	17mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IGOT60R070D1E8220AUMA1	Infineon Technologies	GAN HV FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-20-87 Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)	Package: -	Request a Quote	GaNFET (Gallium Nitride)	600 V	31A (Tc)	-	1.6V @ 2.6mA	-	380 pF @ 400 V	-10V	-	125W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-20-87	20-PowerSOIC (0.433", 11.00mm Width)
SQ4483BEEY-T1_GE3	Vishay Siliconix	MOSFET P-CHANNEL 30V 22A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock71,379	MOSFET (Metal Oxide)	30 V	22A (Tc)	4.5V, 10V	2.5V @ 250µA	113 nC @ 10 V	-	±20V	-	7W (Tc)	8.5mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IXTY44N10T-TRL	IXYS	MOSFET N-CH 100V 44A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	44A (Tc)	10V	4.5V @ 25µA	33 nC @ 10 V	1262 pF @ 25 V	±30V	-	130W (Tc)	30mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
AO4296	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 13.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	13.5A (Ta)	4.5V, 10V	2.3V @ 250µA	60 nC @ 10 V	3130 pF @ 50 V	±20V	-	3.1W (Ta)	8.3mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
UJ4SC075009K4S	Qorvo	750V/9MOHM, SIC, STACKED CASCODE FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 750 V Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 5.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock2,274	SiCFET (Cascode SiCJFET)	750 V	106A (Tc)	12V	5.5V @ 10mA	75 nC @ 15 V	3340 pF @ 400 V	±20V	-	375W (Tc)	11.5mOhm @ 70A, 12V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4