Page 979 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRFS3307Z
Infineon Technologies

MOSFET N-CH 75V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,192
AUIRFR120Z
Infineon Technologies

MOSFET N-CH 100V 8.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,176
IPP80N06S3L-06
Infineon Technologies

MOSFET N-CH 55V 80A TO-220

Package: TO-220-3

Stock4,464
JANTX2N7227U
Microsemi Corporation

MOSFET N-CH

Package: TO-267AB

Stock2,944
JAN2N6768
Microsemi Corporation

MOSFET N-CH TO-204AE TO-3

Package: TO-204AE

Stock3,552
NP23N06YDG-E1-AY
Renesas Electronics America

MOSFET N-CH 60V 23A 8HSON

Package: 8-SMD, Flat Lead Exposed Pad

Stock21,600
FDAF62N28
Fairchild/ON Semiconductor

MOSFET N-CH 280V 36A TO-3PF

Package: SC-94

Stock2,288
FQAF70N15
Fairchild/ON Semiconductor

MOSFET N-CH 150V 44A TO-3PF

Package: SC-94

Stock8,028
SQR40N10-25_GE3
Vishay Siliconix

MOSFET N-CH 100V 40A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,184
SQD19P06-60L_GE3
Vishay Siliconix

MOSFET P-CH 60V 20A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,056
SI7115DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 150V 8.9A 1212-8

Package: PowerPAK? 1212-8

Stock88,896
RUF025N02TL
Rohm Semiconductor

MOSFET N-CH 20V 2.5A TUMT3

Package: 3-SMD, Flat Leads

Stock534,876
STB80NF55-06-1
STMicroelectronics

MOSFET N-CH 55V 80A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock18,708
IRF7416TRPBF
Infineon Technologies

MOSFET P-CH 30V 10A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock98,868
SIR404DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 60A PPAK SO-8

Package: PowerPAK? SO-8

Stock144,000
FDT86102LZ
Fairchild/ON Semiconductor

MOSFET N-CH 100V 6.6A SOT-223

Package: TO-261-4, TO-261AA

Stock35,112
PMH550UPEH
Nexperia USA Inc.

MOSFET P-CH 20V 800MA DFN0606-3

Package: -

Stock46,836
MCAC25P10Y-TP
Micro Commercial Co

P-CHANNEL MOSFET, DFN5060

Package: -

Stock37,056
SIHD6N80AE-GE3
Vishay Siliconix

MOSFET N-CH 800V 5A DPAK

Package: -

Stock8,928
MXB12R600DPHFC
IXYS

MOSFET N-CH 600V 15A

Package: -

Stock750

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRFS3307Z	Infineon Technologies	MOSFET N-CH 75V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,192	MOSFET (Metal Oxide)	75V	120A (Tc)	10V	4V @ 150µA	110nC @ 10V	4750pF @ 50V	±20V	-	230W (Tc)	5.8 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRFR120Z	Infineon Technologies	MOSFET N-CH 100V 8.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,176	MOSFET (Metal Oxide)	100V	8.7A (Tc)	10V	4V @ 25µA	10nC @ 10V	310pF @ 25V	±20V	-	35W (Tc)	190 mOhm @ 5.2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPP80N06S3L-06	Infineon Technologies	MOSFET N-CH 55V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9417pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 56A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock4,464	MOSFET (Metal Oxide)	55V	80A (Tc)	5V, 10V	2.2V @ 80µA	196nC @ 10V	9417pF @ 25V	±16V	-	136W (Tc)	5.9 mOhm @ 56A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
JANTX2N7227U	Microsemi Corporation	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 415 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	Package: TO-267AB	Stock2,944	MOSFET (Metal Oxide)	400V	14A (Tc)	10V	4V @ 250µA	110nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	415 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-267AB	TO-267AB
JAN2N6768	Microsemi Corporation	MOSFET N-CH TO-204AE TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-204AE	Package: TO-204AE	Stock3,552	MOSFET (Metal Oxide)	400V	14A (Tc)	10V	4V @ 250µA	110nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	400 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	-	TO-204AE
NP23N06YDG-E1-AY	Renesas Electronics America	MOSFET N-CH 60V 23A 8HSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 11.5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSON Package / Case: 8-SMD, Flat Lead Exposed Pad	Package: 8-SMD, Flat Lead Exposed Pad	Stock21,600	MOSFET (Metal Oxide)	60V	23A (Tc)	5V, 10V	2.5V @ 250µA	41nC @ 10V	1800pF @ 25V	±20V	-	1W (Ta), 60W (Tc)	27 mOhm @ 11.5A, 10V	175°C (TJ)	Surface Mount	8-HSON	8-SMD, Flat Lead Exposed Pad
FDAF62N28	Fairchild/ON Semiconductor	MOSFET N-CH 280V 36A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 280V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4630pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 51 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock2,288	MOSFET (Metal Oxide)	280V	36A (Tc)	10V	5V @ 250µA	100nC @ 10V	4630pF @ 25V	±30V	-	165W (Tc)	51 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	SC-94
FQAF70N15	Fairchild/ON Semiconductor	MOSFET N-CH 150V 44A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock8,028	MOSFET (Metal Oxide)	150V	44A (Tc)	10V	4V @ 250µA	175nC @ 10V	5400pF @ 25V	±25V	-	130W (Tc)	28 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3PF	SC-94
SQR40N10-25_GE3	Vishay Siliconix	MOSFET N-CH 100V 40A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,184	MOSFET (Metal Oxide)	100V	40A (Tc)	4.5V, 10V	2.5V @ 250µA	70nC @ 10V	3380pF @ 25V	±20V	-	136W (Tc)	25 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SQD19P06-60L_GE3	Vishay Siliconix	MOSFET P-CH 60V 20A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,056	MOSFET (Metal Oxide)	60V	20A (Tc)	4.5V, 10V	2.5V @ 250µA	41nC @ 10V	1490pF @ 25V	±20V	-	46W (Tc)	55 mOhm @ 19A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SI7115DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 150V 8.9A 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 295 mOhm @ 4A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock88,896	MOSFET (Metal Oxide)	150V	8.9A (Tc)	6V, 10V	4V @ 250µA	42nC @ 10V	1190pF @ 50V	±20V	-	3.7W (Ta), 52W (Tc)	295 mOhm @ 4A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
RUF025N02TL	Rohm Semiconductor	MOSFET N-CH 20V 2.5A TUMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 54 mOhm @ 2.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock534,876	MOSFET (Metal Oxide)	20V	2.5A (Ta)	1.5V, 4.5V	1.3V @ 1mA	5nC @ 4.5V	370pF @ 10V	±10V	-	320mW (Ta)	54 mOhm @ 2.5A, 4.5V	150°C (TJ)	Surface Mount	TUMT3	3-SMD, Flat Leads
STB80NF55-06-1	STMicroelectronics	MOSFET N-CH 55V 80A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock18,708	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	189nC @ 10V	4400pF @ 25V	±20V	-	300W (Tc)	6.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF7416TRPBF	Infineon Technologies	MOSFET P-CH 30V 10A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock98,868	MOSFET (Metal Oxide)	30V	10A (Ta)	4.5V, 10V	1V @ 250µA	92nC @ 10V	1700pF @ 25V	±20V	-	2.5W (Ta)	20 mOhm @ 5.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SIR404DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 8130pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock144,000	MOSFET (Metal Oxide)	20V	60A (Tc)	2.5V, 10V	1.5V @ 250µA	97nC @ 4.5V	8130pF @ 10V	±12V	-	6.25W (Ta), 104W (Tc)	1.6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
FDT86102LZ	Fairchild/ON Semiconductor	MOSFET N-CH 100V 6.6A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock35,112	MOSFET (Metal Oxide)	100V	6.6A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 10V	1490pF @ 50V	±20V	-	2.2W (Ta)	28 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
PMH550UPEH	Nexperia USA Inc.	MOSFET P-CH 20V 800MA DFN0606-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 360mW (Ta), 2.23W (Tc) Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN0606-3 Package / Case: 3-XFDFN	Package: -	Stock46,836	MOSFET (Metal Oxide)	20 V	800mA (Ta)	1.8V, 4.5V	950mV @ 250µA	0.9 nC @ 4.5 V	54.8 pF @ 10 V	±8V	-	360mW (Ta), 2.23W (Tc)	640mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN0606-3	3-XFDFN
MCAC25P10Y-TP	Micro Commercial Co	P-CHANNEL MOSFET, DFN5060 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 25A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tj) Rds On (Max) @ Id, Vgs: 56mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Stock37,056	MOSFET (Metal Oxide)	100 V	25A	4.5V, 10V	2.5V @ 250µA	40 nC @ 10 V	2100 pF @ 50 V	±20V	-	88W (Tj)	56mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
SIHD6N80AE-GE3	Vishay Siliconix	MOSFET N-CH 800V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock8,928	MOSFET (Metal Oxide)	800 V	5A (Tc)	10V	4V @ 250µA	22.5 nC @ 10 V	422 pF @ 100 V	±30V	-	62.5W (Tc)	950mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
MXB12R600DPHFC	IXYS	MOSFET N-CH 600V 15A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC™ Package / Case: ISOPLUSi5-PAK™	Package: -	Stock750	MOSFET (Metal Oxide)	650 V	13A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	ISOPLUS i4-PAC™	ISOPLUSi5-PAK™
SIR165DP-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 60A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 69.4W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock48,561	MOSFET (Metal Oxide)	30 V	60A (Tc)	4.5V, 10V	2.3V @ 250µA	138 nC @ 10 V	4930 pF @ 15 V	±20V	-	69.4W (Tc)	4.6mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
BSZ100N06LS3GATMA1	Infineon Technologies	MOSFET N-CH 60V 11A/20A 8TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 23µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerVDFN	Package: -	Stock298,299	MOSFET (Metal Oxide)	60 V	11A (Ta), 20A (Tc)	4.5V, 10V	2.2V @ 23µA	45 nC @ 10 V	3500 pF @ 30 V	±20V	-	2.1W (Ta), 50W (Tc)	10mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerVDFN
MCH6635-TL-E-ON	onsemi	MOSFET P-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
XP3N2R8AMT	YAGEO XSEMI	MOSFET N-CH 30V 32.8A 60A PMPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PMPAK® 5 x 6 Package / Case: 8-PowerLDFN	Package: -	Stock3,000	MOSFET (Metal Oxide)	30 V	32.8A (Ta), 60A (Tc)	4.5V, 10V	3V @ 250µA	40 nC @ 4.5 V	4080 pF @ 15 V	±20V	-	5W (Ta), 50W (Tc)	2.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PMPAK® 5 x 6	8-PowerLDFN
TP65H070LSG-TR	Transphorm	GANFET N-CH 650V 25A PQFN88 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PQFN (8x8) Package / Case: 3-PowerDFN	Package: -	Stock37,089	GaNFET (Gallium Nitride)	650 V	25A (Tc)	10V	4.8V @ 700µA	9.3 nC @ 10 V	600 pF @ 400 V	±20V	-	96W (Tc)	85mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	3-PQFN (8x8)	3-PowerDFN
3LP03SS-TL-E	onsemi	PCH 1.5V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
XP151A12A2MR-G	Torex Semiconductor Ltd	MOSFET N-CH 20V 1A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock300	MOSFET (Metal Oxide)	20 V	1A (Ta)	2.5V, 4.5V	1.4V @ 1mA	-	180 pF @ 10 V	±12V	-	500mW (Ta)	100mOhm @ 500mA, 4.5V	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
DID3A2N65	Diotec Semiconductor	IC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 581 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 2.6Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	3.2A (Tc)	10V	4V @ 250µA	25 nC @ 10 V	581 pF @ 25 V	±30V	-	54W (Tc)	2.6Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA