Page 991 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFC4010EB
Infineon Technologies

MOSFET N-CH 100V DIE ON WAFER

Package: -

Stock3,488
AO3406L_104
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V SOT23

Package: -

Stock5,264
FDP027N08B
Fairchild/ON Semiconductor

MOSFET N-CH 80V 223A TO-220-3

Package: TO-220-3

Stock517,032
TPC6008-H(TE85L,FM
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 5.9A VS6

Package: SOT-23-6 Thin, TSOT-23-6

Stock3,632
SI4110DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 17.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,264
ZVP0545ASTOB
Diodes Incorporated

MOSFET P-CH 450V 0.045A TO92-3

Package: E-Line-3

Stock4,544
2SK137400L
Panasonic Electronic Components

MOSFET N-CH 50V 50MA SMINI-3

Package: SC-70, SOT-323

Stock2,352
IPP04CN10NGXKSA1
Infineon Technologies

MV POWER MOS

Package: -

Stock4,080
AUIRLZ24NS
Infineon Technologies

MOSFET N-CH 55V AUTO

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,176
BSZ099N06LS5ATMA1
Infineon Technologies

MV POWER MOS

Package: 8-PowerTDFN

Stock6,496
APT75F50L
Microsemi Corporation

MOSFET N-CH 500V 75A TO-264

Package: TO-264-3, TO-264AA

Stock7,760
NTTFS4965NFTAG
ON Semiconductor

MOSFET N-CH 30V 64A U8FL

Package: 8-PowerWDFN

Stock3,408
DMP2035UVTQ-7
Diodes Incorporated

MOSFET BVDSS: 8V 24V TSOT26

Package: SOT-23-6 Thin, TSOT-23-6

Stock4,032
IXFN80N60P3
IXYS

MOSFET N-CH 600V 66A SOT-227B

Package: SOT-227-4, miniBLOC

Stock7,568
IXTA1N200P3HV
IXYS

MOSFET N-CH 2000V 1A TO-263HV

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,252
IXFH40N30Q
IXYS

MOSFET N-CH 300V 40A TO-247AD

Package: TO-247-3

Stock484,632
CSD17553Q5A
Texas Instruments

MOSFET N-CH 30V 23.5A 8SON

Package: 8-PowerTDFN

Stock5,744
R6035ENZ1C9
Rohm Semiconductor

MOSFET N-CH 600V 35A TO247

Package: TO-247-3

Stock7,572
IRFIB5N65APBF
Vishay Siliconix

MOSFET N-CH 650V 5.1A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock21,456
IPW60R070P6XKSA1
Infineon Technologies

MOSFET N-CH 600V 53.5A TO247-3

Package: TO-247-3

Stock8,436

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFC4010EB	Infineon Technologies	MOSFET N-CH 100V DIE ON WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,488	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AO3406L_104	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,264	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDP027N08B	Fairchild/ON Semiconductor	MOSFET N-CH 80V 223A TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13530pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 246W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock517,032	MOSFET (Metal Oxide)	80V	120A (Tc)	10V	4.5V @ 250µA	178nC @ 10V	13530pF @ 40V	±20V	-	246W (Tc)	2.7 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
TPC6008-H(TE85L,FM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 5.9A VS6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-6 (2.9x2.8) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock3,632	MOSFET (Metal Oxide)	30V	5.9A (Ta)	4.5V, 10V	2.3V @ 100µA	4.8nC @ 10V	300pF @ 10V	±20V	-	700mW (Ta)	60 mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	VS-6 (2.9x2.8)	SOT-23-6 Thin, TSOT-23-6
SI4110DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 80V 17.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2205pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 7.8W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,264	MOSFET (Metal Oxide)	80V	17.3A (Tc)	10V	4V @ 250µA	53nC @ 10V	2205pF @ 40V	±20V	-	3.6W (Ta), 7.8W (Tc)	13 mOhm @ 11.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
ZVP0545ASTOB	Diodes Incorporated	MOSFET P-CH 450V 0.045A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 45mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 150 Ohm @ 50mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock4,544	MOSFET (Metal Oxide)	450V	45mA (Ta)	10V	4.5V @ 1mA	-	120pF @ 25V	±20V	-	700mW (Ta)	150 Ohm @ 50mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
2SK137400L	Panasonic Electronic Components	MOSFET N-CH 50V 50MA SMINI-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 5V Vgs (Max): 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 50 Ohm @ 10mA, 2.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMini3-G1 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock2,352	MOSFET (Metal Oxide)	50V	50mA (Ta)	2.5V	1.1V @ 100µA	-	4.5pF @ 5V	10V	-	150mW (Ta)	50 Ohm @ 10mA, 2.5V	150°C (TJ)	Surface Mount	SMini3-G1	SC-70, SOT-323
IPP04CN10NGXKSA1	Infineon Technologies	MV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,080	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRLZ24NS	Infineon Technologies	MOSFET N-CH 55V AUTO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,176	MOSFET (Metal Oxide)	55V	18A (Tc)	4V, 10V	2V @ 250µA	15nC @ 5V	480pF @ 25V	±16V	-	3.8W (Ta), 45W (Tc)	60 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSZ099N06LS5ATMA1	Infineon Technologies	MV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,496	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
APT75F50L	Microsemi Corporation	MOSFET N-CH 500V 75A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,760	MOSFET (Metal Oxide)	500V	75A (Tc)	10V	5V @ 2.5mA	290nC @ 10V	11600pF @ 25V	±30V	-	1040W (Tc)	75 mOhm @ 37A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
NTTFS4965NFTAG	ON Semiconductor	MOSFET N-CH 30V 64A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2075pF @ 15V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,408	MOSFET (Metal Oxide)	30V	16.3A (Ta), 64A (Tc)	-	2.3V @ 250µA	29.4nC @ 10V	2075pF @ 15V	-	-	-	3.5 mOhm @ 20A, 10V	-	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
DMP2035UVTQ-7	Diodes Incorporated	MOSFET BVDSS: 8V 24V TSOT26 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-26 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock4,032	MOSFET (Metal Oxide)	20V	7.2A (Ta)	1.8V, 4.5V	1.5V @ 250µA	23.1nC @ 4.5V	2400pF @ 10V	±12V	-	2W (Ta)	35 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6
IXFN80N60P3	IXYS	MOSFET N-CH 600V 66A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 66A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,568	MOSFET (Metal Oxide)	600V	66A	10V	5V @ 8mA	190nC @ 10V	13100pF @ 25V	±30V	-	960W (Tc)	70 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTA1N200P3HV	IXYS	MOSFET N-CH 2000V 1A TO-263HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2000V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 40 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,252	MOSFET (Metal Oxide)	2000V	1A (Tc)	10V	4V @ 250µA	23.5nC @ 10V	646pF @ 25V	±20V	-	125W (Tc)	40 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFH40N30Q	IXYS	MOSFET N-CH 300V 40A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock484,632	MOSFET (Metal Oxide)	300V	40A (Tc)	10V	4V @ 4mA	140nC @ 10V	3100pF @ 25V	±20V	-	300W (Tc)	80 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
CSD17553Q5A	Texas Instruments	MOSFET N-CH 30V 23.5A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23.5A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3252pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,744	MOSFET (Metal Oxide)	30V	23.5A (Ta), 100A (Tc)	4.5V, 10V	1.9V @ 250µA	21.5nC @ 4.5V	3252pF @ 15V	±20V	-	3.1W (Ta)	3.1 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
R6035ENZ1C9	Rohm Semiconductor	MOSFET N-CH 600V 35A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 102 mOhm @ 18.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,572	MOSFET (Metal Oxide)	600V	35A (Tc)	10V	4V @ 1mA	110nC @ 10V	2720pF @ 25V	±20V	-	120W (Tc)	102 mOhm @ 18.1A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
IRFIB5N65APBF	Vishay Siliconix	MOSFET N-CH 650V 5.1A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1417pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 930 mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock21,456	MOSFET (Metal Oxide)	650V	5.1A (Tc)	10V	4V @ 250µA	48nC @ 10V	1417pF @ 25V	±30V	-	60W (Tc)	930 mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IPW60R070P6XKSA1	Infineon Technologies	MOSFET N-CH 600V 53.5A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.72mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 391W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 20.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock8,436	MOSFET (Metal Oxide)	600V	53.5A (Tc)	10V	4.5V @ 1.72mA	100nC @ 10V	4750pF @ 100V	±20V	-	391W (Tc)	70 mOhm @ 20.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IRLML5103GTRPBF	Infineon Technologies	MOSFET P-CH 30V 0.76A SOT-23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 760mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 600 mOhm @ 600mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro3?/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock693,024	MOSFET (Metal Oxide)	30V	760mA (Ta)	4.5V, 10V	1V @ 250µA	5.1nC @ 10V	75pF @ 25V	±20V	-	540mW (Ta)	600 mOhm @ 600mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Micro3?/SOT-23	TO-236-3, SC-59, SOT-23-3
IXFN132N50P3	IXYS	MOSFET N-CH 500V 112A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 112A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1500W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 66A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,528	MOSFET (Metal Oxide)	500V	112A	10V	5V @ 8mA	250nC @ 10V	18600pF @ 25V	±30V	-	1500W (Tc)	39 mOhm @ 66A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
NP80N04KHE-E1-AZ	Renesas	NP80N04KHE-E1-AZ - SWITCHINGN-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: TO-263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	80A (Tc)	10V	4V @ 250µA	60 nC @ 10 V	3300 pF @ 25 V	±20V	-	1.8W (Ta), 120W (Tc)	8mOhm @ 40A, 10V	175°C	Surface Mount	TO-263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
ISL9N304AP3	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 145W (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	75A (Tc)	4.5V, 10V	3V @ 250µA	105 nC @ 10 V	4075 pF @ 15 V	±20V	-	145W (Ta)	4.5mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFT120N30X3HV	IXYS	MOSFET N-CH 300V 120A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 735W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXFT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	120A (Tc)	10V	4.5V @ 4mA	170 nC @ 10 V	10500 pF @ 25 V	±20V	-	735W (Tc)	11mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXFT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TSM035NB04CZ	Taiwan Semiconductor Corporation	MOSFET N-CH 40V 18A/157A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 157A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6990 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock11,550	MOSFET (Metal Oxide)	40 V	18A (Ta), 157A (Tc)	-	4V @ 250µA	110 nC @ 10 V	6990 pF @ 20 V	±20V	-	2W (Ta), 156W (Tc)	3.5mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
18N20J	Goford Semiconductor	N200V, 18A,RD<0.16@10V,VTH1V~3V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 65.8W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	3V @ 250µA	17.7 nC @ 10 V	836 pF @ 25 V	±30V	-	65.8W (Tc)	160mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
NVTFS027N10MCLTAG	onsemi	PTNG 100V LL U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 38µA Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Stock6,387	MOSFET (Metal Oxide)	100 V	7.4A (Ta), 28A (Tc)	4.5V, 10V	3V @ 38µA	11.5 nC @ 10 V	800 pF @ 50 V	±20V	-	3.1W (Ta), 46W (Tc)	26mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN