Page 126 - Transistors - IGBTs - Single | Discrete Semiconductor Products

IRG4BC30F-S
Infineon Technologies

IGBT 600V 31A 100W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,744
IRGPC50UD2
Infineon Technologies

IGBT W/DIODE 600V 55A TO-247AC

Package: TO-247-3

Stock4,112
NGTB50N60FLWG
ON Semiconductor

IGBT 600V 50A TO247

Package: TO-247-3

Stock4,560
RJP60F5DPM-00#T1
Renesas Electronics America

IGBT 600V 80A 45W TO-3PFM

Package: TO-3PFM, SC-93-3

Stock4,880
NGB8207NT4G
ON Semiconductor

IGBT 365V 20A 165W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock177,864
FGB40N6S2T
Fairchild/ON Semiconductor

IGBT 600V 75A 290W TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,344
IRG8CH50K10F
Infineon Technologies

IGBT CHIP WAFER

Package: Die

Stock7,168
IRGS6B60KDPBF
Infineon Technologies

IGBT 600V 13A 90W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,212
STGW80H65FB-4
STMicroelectronics

IGBT BIPO 650V 80A TO247

Package: TO-247-4

Stock3,408
IXGH60N60C3
IXYS

IGBT 600V 75A 380W TO247AD

Package: TO-247-3

Stock390,000
IXA4I1200UC
IXYS

IGBT 1200V 9A 45W TO252AA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,640
APT20GT60BRG
Microsemi Corporation

IGBT 600V 43A 174W TO247

Package: TO-247-3

Stock3,792
RJH60D3DPP-M0#T2
Renesas Electronics America

IGBT 600V 35A 30W TO220FL

Package: TO-220-3 Full Pack

Stock5,664
AOT20B65M1
Alpha & Omega Semiconductor Inc.

IGBT 650V 20A TO220

Package: TO-220-3

Stock22,068
STGFW30NC60V
STMicroelectronics

IGBT 600V 36A 80W TO3PF

Package: TO-3P-3 Full Pack

Stock6,216
IKW40N65WR5XKSA1
Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

Package: TO-247-3

Stock7,764
STGP7NC60H
STMicroelectronics

IGBT 600V 25A 80W TO220

Package: TO-220-3

Stock4,688
HGTG11N120CND
Fairchild/ON Semiconductor

IGBT 1200V 43A 298W TO247

Package: TO-247-3

Stock166,644
STGW35HF60WD
STMicroelectronics

IGBT 600V 60A 200W TO-247

Package: TO-247-3

Stock390,720
IRGB4620DPBF
Infineon Technologies

IGBT 600V 32A 140W TO220

Package: TO-220-3

Stock8,244

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG4BC30F-S	Infineon Technologies	IGBT 600V 31A 100W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 230µJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 21ns/200ns Test Condition: 480V, 17A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,744	600V	31A	120A	1.8V @ 15V, 17A	100W	230µJ (on), 1.18mJ (off)	Standard	51nC	21ns/200ns	480V, 17A, 23 Ohm, 15V	-	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IRGPC50UD2	Infineon Technologies	IGBT W/DIODE 600V 55A TO-247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 27A Power - Max: 200W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	Package: TO-247-3	Stock4,112	600V	55A	-	3V @ 15V, 27A	200W	-	Standard	-	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
NGTB50N60FLWG	ON Semiconductor	IGBT 600V 50A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Power - Max: 223W Switching Energy: 1.1mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 116ns/292ns Test Condition: 400V, 50A, 10 Ohm, 15V Reverse Recovery Time (trr): 85ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock4,560	600V	100A	200A	1.9V @ 15V, 50A	223W	1.1mJ (on), 600µJ (off)	Standard	310nC	116ns/292ns	400V, 50A, 10 Ohm, 15V	85ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
RJP60F5DPM-00#T1	Renesas Electronics America	IGBT 600V 80A 45W TO-3PFM IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Power - Max: 45W Switching Energy: - Input Type: Standard Gate Charge: 74nC Td (on/off) @ 25°C: 53ns/90ns Test Condition: 400V, 30A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	Package: TO-3PFM, SC-93-3	Stock4,880	600V	80A	-	1.8V @ 15V, 40A	45W	-	Standard	74nC	53ns/90ns	400V, 30A, 5 Ohm, 15V	-	150°C (TJ)	Through Hole	TO-3PFM, SC-93-3	TO-3PFM
NGB8207NT4G	ON Semiconductor	IGBT 365V 20A 165W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 365V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 2.6V @ 4V, 20A Power - Max: 165W Switching Energy: - Input Type: Logic Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock177,864	365V	20A	50A	2.6V @ 4V, 20A	165W	-	Logic	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
FGB40N6S2T	Fairchild/ON Semiconductor	IGBT 600V 75A 290W TO263AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A Power - Max: 290W Switching Energy: 115µJ (on), 195µJ (off) Input Type: Standard Gate Charge: 35nC Td (on/off) @ 25°C: 8ns/35ns Test Condition: 390V, 20A, 3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,344	600V	75A	180A	2.7V @ 15V, 20A	290W	115µJ (on), 195µJ (off)	Standard	35nC	8ns/35ns	390V, 20A, 3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB
IRG8CH50K10F	Infineon Technologies	IGBT CHIP WAFER IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 245nC Td (on/off) @ 25°C: 60ns/285ns Test Condition: 600V, 50A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: Die	Stock7,168	1200V	50A	-	2V @ 15V, 50A	-	-	Standard	245nC	60ns/285ns	600V, 50A, 5 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRGS6B60KDPBF	Infineon Technologies	IGBT 600V 13A 90W D2PAK IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 26A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Power - Max: 90W Switching Energy: 110µJ (on), 135µJ (off) Input Type: Standard Gate Charge: 18.2nC Td (on/off) @ 25°C: 25ns/215ns Test Condition: 400V, 5A, 100 Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,212	600V	13A	26A	2.2V @ 15V, 5A	90W	110µJ (on), 135µJ (off)	Standard	18.2nC	25ns/215ns	400V, 5A, 100 Ohm, 15V	70ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
STGW80H65FB-4	STMicroelectronics	IGBT BIPO 650V 80A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A Power - Max: 469W Switching Energy: 2.1mJ (on), 1.5mJ (off) Input Type: Standard Gate Charge: 414nC Td (on/off) @ 25°C: 84ns/280ns Test Condition: 400V, 80A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4L	Package: TO-247-4	Stock3,408	650V	120A	240A	2V @ 15V, 80A	469W	2.1mJ (on), 1.5mJ (off)	Standard	414nC	84ns/280ns	400V, 80A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4L
IXGH60N60C3	IXYS	IGBT 600V 75A 380W TO247AD IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 360A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Power - Max: 380W Switching Energy: 800µJ (on), 450µJ (off) Input Type: Standard Gate Charge: 115nC Td (on/off) @ 25°C: 21ns/70ns Test Condition: 480V, 40A, 3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock390,000	600V	75A	360A	2.5V @ 15V, 40A	380W	800µJ (on), 450µJ (off)	Standard	115nC	21ns/70ns	480V, 40A, 3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
IXA4I1200UC	IXYS	IGBT 1200V 9A 45W TO252AA IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 9A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A Power - Max: 45W Switching Energy: 400µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 12nC Td (on/off) @ 25°C: - Test Condition: 600V, 3A, 330 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak)	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,640	1200V	9A	-	2.1V @ 15V, 3A	45W	400µJ (on), 300µJ (off)	Standard	12nC	-	600V, 3A, 330 Ohm, 15V	-	-40°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)
APT20GT60BRG	Microsemi Corporation	IGBT 600V 43A 174W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 43A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 174W Switching Energy: 215µJ (on), 245µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 8ns/80ns Test Condition: 400V, 20A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock3,792	600V	43A	80A	2.5V @ 15V, 20A	174W	215µJ (on), 245µJ (off)	Standard	100nC	8ns/80ns	400V, 20A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
RJH60D3DPP-M0#T2	Renesas Electronics America	IGBT 600V 35A 30W TO220FL IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 17A Power - Max: 40W Switching Energy: 200µJ (on), 210µJ (off) Input Type: Standard Gate Charge: 37nC Td (on/off) @ 25°C: 35ns/80ns Test Condition: 300V, 17A, 5 Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FL	Package: TO-220-3 Full Pack	Stock5,664	600V	35A	-	2.2V @ 15V, 17A	40W	200µJ (on), 210µJ (off)	Standard	37nC	35ns/80ns	300V, 17A, 5 Ohm, 15V	100ns	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FL
AOT20B65M1	Alpha & Omega Semiconductor Inc.	IGBT 650V 20A TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A Power - Max: 227W Switching Energy: 470µJ (on), 270µJ (off) Input Type: Standard Gate Charge: 46nC Td (on/off) @ 25°C: 26ns/122ns Test Condition: 400V, 20A, 15 Ohm, 15V Reverse Recovery Time (trr): 322ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Package: TO-220-3	Stock22,068	650V	40A	60A	2.15V @ 15V, 20A	227W	470µJ (on), 270µJ (off)	Standard	46nC	26ns/122ns	400V, 20A, 15 Ohm, 15V	322ns	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220
STGFW30NC60V	STMicroelectronics	IGBT 600V 36A 80W TO3PF IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 36A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 80W Switching Energy: 220µJ (on), 330µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 31ns/100ns Test Condition: 390V, 20A, 3.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3PF	Package: TO-3P-3 Full Pack	Stock6,216	600V	36A	100A	2.5V @ 15V, 20A	80W	220µJ (on), 330µJ (off)	Standard	100nC	31ns/100ns	390V, 20A, 3.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-3PF
IKW40N65WR5XKSA1	Infineon Technologies	IGBT 650V 74A 255W PG-TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Power - Max: 230W Switching Energy: 770µJ (on), 160µJ (off) Input Type: Standard Gate Charge: 193nC Td (on/off) @ 25°C: 42ns/432ns Test Condition: 400V, 20A, 20 Ohm, 15V Reverse Recovery Time (trr): 112ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Package: TO-247-3	Stock7,764	650V	80A	120A	1.8V @ 15V, 40A	230W	770µJ (on), 160µJ (off)	Standard	193nC	42ns/432ns	400V, 20A, 20 Ohm, 15V	112ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
STGP7NC60H	STMicroelectronics	IGBT 600V 25A 80W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 25A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A Power - Max: 80W Switching Energy: 95µJ (on), 115µJ (off) Input Type: Standard Gate Charge: 35nC Td (on/off) @ 25°C: 18.5ns/72ns Test Condition: 390V, 7A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock4,688	600V	25A	50A	2.5V @ 15V, 7A	80W	95µJ (on), 115µJ (off)	Standard	35nC	18.5ns/72ns	390V, 7A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
HGTG11N120CND	Fairchild/ON Semiconductor	IGBT 1200V 43A 298W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 43A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A Power - Max: 298W Switching Energy: 950µJ (on), 1.3mJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 23ns/180ns Test Condition: 960V, 11A, 10 Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock166,644	1200V	43A	80A	2.4V @ 15V, 11A	298W	950µJ (on), 1.3mJ (off)	Standard	100nC	23ns/180ns	960V, 11A, 10 Ohm, 15V	70ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
STGW35HF60WD	STMicroelectronics	IGBT 600V 60A 200W TO-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 200W Switching Energy: 290µJ (on), 185µJ (off) Input Type: Standard Gate Charge: 140nC Td (on/off) @ 25°C: 30ns/175ns Test Condition: 400V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: TO-247-3	Stock390,720	600V	60A	150A	2.5V @ 15V, 20A	200W	290µJ (on), 185µJ (off)	Standard	140nC	30ns/175ns	400V, 20A, 10 Ohm, 15V	50ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRGB4620DPBF	Infineon Technologies	IGBT 600V 32A 140W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 32A Current - Collector Pulsed (Icm): 36A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A Power - Max: 140W Switching Energy: 75µJ (on), 225µJ (off) Input Type: Standard Gate Charge: 25nC Td (on/off) @ 25°C: 31ns/83ns Test Condition: 400V, 12A, 22 Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AC	Package: TO-220-3	Stock8,244	600V	32A	36A	1.85V @ 15V, 12A	140W	75µJ (on), 225µJ (off)	Standard	25nC	31ns/83ns	400V, 12A, 22 Ohm, 15V	68ns	-40°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AC
IKW40N120H3	Infineon Technologies	IGBT 1200V 80A 483W TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 483W Switching Energy: 4.4mJ Input Type: Standard Gate Charge: 185nC Td (on/off) @ 25°C: 30ns/290ns Test Condition: 600V, 40A, 12 Ohm, 15V Reverse Recovery Time (trr): 355ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Package: TO-247-3	Stock137,040	1200V	80A	160A	2.4V @ 15V, 40A	483W	4.4mJ	Standard	185nC	30ns/290ns	600V, 40A, 12 Ohm, 15V	355ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
HGTP10N40C1	Harris Corporation	IGBT 400V 10A TO220-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): 17.5 A Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A Power - Max: 60 W Switching Energy: - Input Type: Standard Gate Charge: 19 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	Package: -	Request a Quote	400 V	10 A	17.5 A	3.2V @ 20V, 17.5A	60 W	-	Standard	19 nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FGD3040G2-0002V	onsemi	FGD3040G2-0002V IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK)	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)
SIGC14T60NCX1SA7	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 15A, 18Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	21ns/110ns	300V, 15A, 18Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
FGHL50T65MQDTL4	onsemi	FS4 MID SPEED IGBT 650V 50A TO24 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Power - Max: 268 W Switching Energy: 1mJ (on), 850µJ (off) Input Type: Standard Gate Charge: 99 nC Td (on/off) @ 25°C: 50ns/336ns Test Condition: 400V, 50A, 30Ohm, 15V Reverse Recovery Time (trr): 79 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4L	Package: -	Stock6,729	650 V	80 A	200 A	1.8V @ 15V, 50A	268 W	1mJ (on), 850µJ (off)	Standard	99 nC	50ns/336ns	400V, 50A, 30Ohm, 15V	79 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4L
RJP6055DPP-90-T2	Renesas Electronics Corporation	IGBT 630V, 40A FOR PLASMA TV IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RGCL60TK60GC11	Rohm Semiconductor	IGBT TRNCH FIELD 600V 30A TO3PFM IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Power - Max: 54 W Switching Energy: 770µJ (on), 1.11mJ (off) Input Type: Standard Gate Charge: 68 nC Td (on/off) @ 25°C: 44ns/186ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	Package: -	Stock165	600 V	30 A	120 A	1.8V @ 15V, 30A	54 W	770µJ (on), 1.11mJ (off)	Standard	68 nC	44ns/186ns	400V, 30A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-3PFM, SC-93-3	TO-3PFM
AOTF15B65M3	Alpha & Omega Semiconductor Inc.	IGBT 650V 15A TO-220F IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: 30 W Switching Energy: 280µJ (on), 190µJ (off) Input Type: Standard Gate Charge: 25.4 nC Td (on/off) @ 25°C: 10ns/68ns Test Condition: 400V, 15A, 20Ohm, 15V Reverse Recovery Time (trr): 263 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	Package: -	Request a Quote	650 V	30 A	45 A	2.5V @ 15V, 15A	30 W	280µJ (on), 190µJ (off)	Standard	25.4 nC	10ns/68ns	400V, 15A, 20Ohm, 15V	263 ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F