Page 150 - Transistors - IGBTs - Single | Discrete Semiconductor Products

IRG8P15N120KD-EPBF
Infineon Technologies

IGBT 1200V 30A 125W TO-247AD

Package: TO-247-3

Stock5,008
IRG4BC30K-S
Infineon Technologies

IGBT 600V 28A 100W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock38,340
STGW25H120DF2
STMicroelectronics

IGBT H-SERIES 1200V 25A TO-247

Package: TO-247-3

Stock4,704
IXGP12N60B
IXYS

IGBT 600V 24A 100W TO220AB

Package: TO-220-3

Stock6,704
IXGH17N100AU1
IXYS

IGBT 1000V 34A 150W TO247AD

Package: TO-247-3

Stock5,488
APT25GP90BG
Microsemi Corporation

IGBT 900V 72A 417W TO247

Package: TO-247-3

Stock5,904
IXGQ96N30TCD1
IXYS

IGBT 320V 96A TO3P

Package: TO-3P-3, SC-65-3

Stock4,496
IXGP20N120
IXYS

IGBT 1200V 40A 150W TO220

Package: TO-220-3

Stock4,048
IXYH24N90C3
IXYS

IGBT 900V 46A 240W TO247

Package: TO-247-3

Stock4,912
FGB3040G2_F085
Fairchild/ON Semiconductor

IGBT 400V 41A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,080
APT50GR120B2
Microsemi Corporation

IGBT 1200V 117A 694W TO247

Package: TO-247-3

Stock4,176
IRG4BC30KDPBF
Infineon Technologies

IGBT 600V 28A 100W TO220AB

Package: TO-220-3

Stock72,768
STGF17NC60SD
STMicroelectronics

IGBT 600V 17A 32W TO220FP

Package: TO-220-3 Full Pack

Stock20,412
NGTB25N120FLWG
ON Semiconductor

IGBT 1200V 25A TO247-3

Package: TO-247-3

Stock7,776
IKW25N120H3FKSA1
Infineon Technologies

IGBT 1200V 50A 326W TO247-3

Package: TO-247-3

Stock6,996
STGP19NC60HD
STMicroelectronics

IGBT 600V 40A 130W TO220

Package: TO-220-3

Stock83,712
RGS00TS65EHRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 88A TO247N

Package: -

Stock1,350
FGD3N60LSDTM-T
onsemi

IGBT 600V 6A TO252-3

Package: -

Request a Quote
IGC27T120T8LX1SA2
Infineon Technologies

IGBT 1200V 25A DIE

Package: -

Request a Quote
AIGB50N65H5ATMA1
Infineon Technologies

IGBT NPT 650V 50A TO263-3

Package: -

Stock8,511

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG8P15N120KD-EPBF	Infineon Technologies	IGBT 1200V 30A 125W TO-247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Power - Max: 125W Switching Energy: 600µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 98nC Td (on/off) @ 25°C: 15ns/170ns Test Condition: 600V, 10A, 10 Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	Package: TO-247-3	Stock5,008	1200V	30A	30A	2V @ 15V, 10A	125W	600µJ (on), 600µJ (off)	Standard	98nC	15ns/170ns	600V, 10A, 10 Ohm, 15V	60ns	-40°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD
IRG4BC30K-S	Infineon Technologies	IGBT 600V 28A 100W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 58A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 360µJ (on), 510µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 26ns/130ns Test Condition: 480V, 16A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock38,340	600V	28A	58A	2.7V @ 15V, 16A	100W	360µJ (on), 510µJ (off)	Standard	67nC	26ns/130ns	480V, 16A, 23 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
STGW25H120DF2	STMicroelectronics	IGBT H-SERIES 1200V 25A TO-247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A Power - Max: 375W Switching Energy: 600µJ (on), 700µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 29ns/130ns Test Condition: 600V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): 303ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock4,704	1200V	50A	100A	2.6V @ 15V, 25A	375W	600µJ (on), 700µJ (off)	Standard	100nC	29ns/130ns	600V, 25A, 10 Ohm, 15V	303ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
IXGP12N60B	IXYS	IGBT 600V 24A 100W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 48A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Power - Max: 100W Switching Energy: 500µJ (off) Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 20ns/150ns Test Condition: 480V, 12A, 18 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock6,704	600V	24A	48A	2.1V @ 15V, 12A	100W	500µJ (off)	Standard	32nC	20ns/150ns	480V, 12A, 18 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IXGH17N100AU1	IXYS	IGBT 1000V 34A 150W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 34A Current - Collector Pulsed (Icm): 68A Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A Power - Max: 150W Switching Energy: 3mJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 100ns/500ns Test Condition: 800V, 17A, 82 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock5,488	1000V	34A	68A	4V @ 15V, 17A	150W	3mJ (off)	Standard	100nC	100ns/500ns	800V, 17A, 82 Ohm, 15V	50ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
APT25GP90BG	Microsemi Corporation	IGBT 900V 72A 417W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 72A Current - Collector Pulsed (Icm): 110A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A Power - Max: 417W Switching Energy: 370µJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 13ns/55ns Test Condition: 600V, 25A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock5,904	900V	72A	110A	3.9V @ 15V, 25A	417W	370µJ (off)	Standard	110nC	13ns/55ns	600V, 25A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
IXGQ96N30TCD1	IXYS	IGBT 320V 96A TO3P IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 320V Current - Collector (Ic) (Max): 96A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	Package: TO-3P-3, SC-65-3	Stock4,496	320V	96A	-	-	-	-	Standard	-	-	-	-	-	Through Hole	TO-3P-3, SC-65-3	TO-3P
IXGP20N120	IXYS	IGBT 1200V 40A 150W TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 150W Switching Energy: 6.5mJ (off) Input Type: Standard Gate Charge: 63nC Td (on/off) @ 25°C: 28ns/400ns Test Condition: 800V, 20A, 47 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock4,048	1200V	40A	80A	2.5V @ 15V, 20A	150W	6.5mJ (off)	Standard	63nC	28ns/400ns	800V, 20A, 47 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IXYH24N90C3	IXYS	IGBT 900V 46A 240W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 46A Current - Collector Pulsed (Icm): 110A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A Power - Max: 240W Switching Energy: 1.35mJ (on), 400µJ (off) Input Type: Standard Gate Charge: 40nC Td (on/off) @ 25°C: 20ns/73ns Test Condition: 450V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXYH)	Package: TO-247-3	Stock4,912	900V	46A	110A	2.7V @ 15V, 24A	240W	1.35mJ (on), 400µJ (off)	Standard	40nC	20ns/73ns	450V, 24A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 (IXYH)
FGB3040G2_F085	Fairchild/ON Semiconductor	IGBT 400V 41A TO263 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): 41A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Power - Max: 150W Switching Energy: - Input Type: Logic Gate Charge: 21nC Td (on/off) @ 25°C: 900ns/4.8µs Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263)	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,080	400V	41A	-	1.25V @ 4V, 6A	150W	-	Logic	21nC	900ns/4.8µs	-	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK (TO-263)
APT50GR120B2	Microsemi Corporation	IGBT 1200V 117A 694W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 117A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A Power - Max: 694W Switching Energy: 2.14mJ (on), 1.48mJ (off) Input Type: Standard Gate Charge: 445nC Td (on/off) @ 25°C: 28ns/237ns Test Condition: 600V, 50A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock4,176	1200V	117A	200A	3.2V @ 15V, 50A	694W	2.14mJ (on), 1.48mJ (off)	Standard	445nC	28ns/237ns	600V, 50A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
IRG4BC30KDPBF	Infineon Technologies	IGBT 600V 28A 100W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 600µJ (on), 580µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 60ns/160ns Test Condition: 480V, 16A, 23 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock72,768	600V	28A	56A	2.7V @ 15V, 16A	100W	600µJ (on), 580µJ (off)	Standard	67nC	60ns/160ns	480V, 16A, 23 Ohm, 15V	42ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
STGF17NC60SD	STMicroelectronics	IGBT 600V 17A 32W TO220FP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 17A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 12A Power - Max: 32W Switching Energy: 135µJ (on), 815µJ (off) Input Type: Standard Gate Charge: 54.5nC Td (on/off) @ 25°C: 17.5ns/175ns Test Condition: 480V, 12A, 10 Ohm, 15V Reverse Recovery Time (trr): 31ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP	Package: TO-220-3 Full Pack	Stock20,412	600V	17A	80A	1.9V @ 15V, 12A	32W	135µJ (on), 815µJ (off)	Standard	54.5nC	17.5ns/175ns	480V, 12A, 10 Ohm, 15V	31ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FP
NGTB25N120FLWG	ON Semiconductor	IGBT 1200V 25A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A Power - Max: 192W Switching Energy: 1.5mJ (on), 950µJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: 91ns/228ns Test Condition: 600V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): 240ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock7,776	1200V	50A	200A	2.2V @ 15V, 25A	192W	1.5mJ (on), 950µJ (off)	Standard	220nC	91ns/228ns	600V, 25A, 10 Ohm, 15V	240ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
IKW25N120H3FKSA1	Infineon Technologies	IGBT 1200V 50A 326W TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 326W Switching Energy: 2.65mJ Input Type: Standard Gate Charge: 115nC Td (on/off) @ 25°C: 27ns/277ns Test Condition: 600V, 25A, 23 Ohm, 15V Reverse Recovery Time (trr): 290ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Package: TO-247-3	Stock6,996	1200V	50A	100A	2.4V @ 15V, 25A	326W	2.65mJ	Standard	115nC	27ns/277ns	600V, 25A, 23 Ohm, 15V	290ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
STGP19NC60HD	STMicroelectronics	IGBT 600V 40A 130W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A Power - Max: 130W Switching Energy: 85µJ (on), 189µJ (off) Input Type: Standard Gate Charge: 53nC Td (on/off) @ 25°C: 25ns/97ns Test Condition: 390V, 12A, 10 Ohm, 15V Reverse Recovery Time (trr): 31ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Package: TO-220-3	Stock83,712	600V	40A	60A	2.5V @ 15V, 12A	130W	85µJ (on), 189µJ (off)	Standard	53nC	25ns/97ns	390V, 12A, 10 Ohm, 15V	31ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
RGS00TS65EHRC11	Rohm Semiconductor	IGBT TRNCH FIELD 650V 88A TO247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 88 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Power - Max: 326 W Switching Energy: - Input Type: Standard Gate Charge: 58 nC Td (on/off) @ 25°C: 36ns/115ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 113 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	Package: -	Stock1,350	650 V	88 A	150 A	2.1V @ 15V, 50A	326 W	-	Standard	58 nC	36ns/115ns	400V, 50A, 10Ohm, 15V	113 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N
FGD3N60LSDTM-T	onsemi	IGBT 600V 6A TO252-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 6 A Current - Collector Pulsed (Icm): 25 A Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A Power - Max: 40 W Switching Energy: 250µJ (on), 1mJ (off) Input Type: Standard Gate Charge: 12.5 nC Td (on/off) @ 25°C: 40ns/600ns Test Condition: 480V, 3A, 470Ohm, 10V Reverse Recovery Time (trr): 234 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	Package: -	Request a Quote	600 V	6 A	25 A	1.5V @ 10V, 3A	40 W	250µJ (on), 1mJ (off)	Standard	12.5 nC	40ns/600ns	480V, 3A, 470Ohm, 10V	234 ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA
IGC27T120T8LX1SA2	Infineon Technologies	IGBT 1200V 25A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 75 A Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 25A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	1200 V	-	75 A	2.07V @ 15V, 25A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
AIGB50N65H5ATMA1	Infineon Technologies	IGBT NPT 650V 50A TO263-3 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2	Package: -	Stock8,511	650 V	50 A	-	-	-	-	Standard	-	-	-	-	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-3-2
RJP3043DPK-80-T2	Renesas Electronics Corporation	HIGH SPEED IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IKWH40N65WR6XKSA1	Infineon Technologies	IGBT TRENCH 650V 75A TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 75 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 40A Power - Max: 175 W Switching Energy: 1.09mJ (on), 570µJ (off) Input Type: Standard Gate Charge: 117 nC Td (on/off) @ 25°C: 37ns/353ns Test Condition: 400V, 40A, 27Ohm, 15V Reverse Recovery Time (trr): 79 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-32	Package: -	Stock738	650 V	75 A	120 A	1.85V @ 15V, 40A	175 W	1.09mJ (on), 570µJ (off)	Standard	117 nC	37ns/353ns	400V, 40A, 27Ohm, 15V	79 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-32
IXYK85N120C4H1	IXYS	IGBT TRENCH 1200V 220A SOT227B IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 220 A Current - Collector Pulsed (Icm): 420 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A Power - Max: 1150 W Switching Energy: 4.3mJ (on), 2mJ (off) Input Type: Standard Gate Charge: 192 nC Td (on/off) @ 25°C: 35ns/280ns Test Condition: 600V, 50A, 5Ohm, 15V Reverse Recovery Time (trr): 265 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	Package: -	Stock882	1200 V	220 A	420 A	2.5V @ 15V, 85A	1150 W	4.3mJ (on), 2mJ (off)	Standard	192 nC	35ns/280ns	600V, 50A, 5Ohm, 15V	265 ns	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227B
IKY120N120CH7XKSA1	Infineon Technologies	IGBT TRENCH FS 1200V 212A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 212 A Current - Collector Pulsed (Icm): 400 A Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A Power - Max: 721 W Switching Energy: 2.37mJ (on), 2.65mJ (off) Input Type: Standard Gate Charge: 714 nC Td (on/off) @ 25°C: 44ns/359ns Test Condition: 600V, 100A, 4Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: PG-TO247-4-U10	Package: -	Stock555	1200 V	212 A	400 A	2.15V @ 15V, 100A	721 W	2.37mJ (on), 2.65mJ (off)	Standard	714 nC	44ns/359ns	600V, 100A, 4Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-4	PG-TO247-4-U10
IXYA50N65C3-TRL	IXYS	IGBT PT 650V 132A TO263AA IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 132 A Current - Collector Pulsed (Icm): 250 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A Power - Max: 600 W Switching Energy: 800µJ (on), 470µJ (off) Input Type: Standard Gate Charge: 86 nC Td (on/off) @ 25°C: 20ns/90ns Test Condition: 400V, 36A, 5Ohm, 15V Reverse Recovery Time (trr): 36 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AA	Package: -	Request a Quote	650 V	132 A	250 A	2.1V @ 15V, 36A	600 W	800µJ (on), 470µJ (off)	Standard	86 nC	20ns/90ns	400V, 36A, 5Ohm, 15V	36 ns	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AA
IHW25N140R5LXKSA1	Infineon Technologies	IGBT 1400V 68A TO247-44 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1400 V Current - Collector (Ic) (Max): 68 A Current - Collector Pulsed (Icm): 75 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A Power - Max: 246 W Switching Energy: -, 110µJ (off) Input Type: Standard Gate Charge: 150 nC Td (on/off) @ 25°C: -/195ns Test Condition: 25V, 25A, 2.2Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-44	Package: -	Stock696	1400 V	68 A	75 A	1.9V @ 15V, 25A	246 W	-, 110µJ (off)	Standard	150 nC	-/195ns	25V, 25A, 2.2Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-44
RGW80NL65HRBTL	Rohm Semiconductor	IGBT TRENCH FS 650V 83A TO263L IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 83 A Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Power - Max: 227 W Switching Energy: 240µJ (on), 330µJ (off) Input Type: Standard Gate Charge: 110 nC Td (on/off) @ 25°C: 42ns/148ns Test Condition: 400V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263L	Package: -	Stock2,991	650 V	83 A	160 A	1.9V @ 15V, 40A	227 W	240µJ (on), 330µJ (off)	Standard	110 nC	42ns/148ns	400V, 20A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263L
IGW25T120FKSA1	Infineon Technologies	IGBT NPT FS 1200V 50A TO247-3 IGBT Type: NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 75 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A Power - Max: 190 W Switching Energy: 4.2mJ Input Type: Standard Gate Charge: 155 nC Td (on/off) @ 25°C: 50ns/560ns Test Condition: 600V, 25A, 22Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-1	Package: -	Stock11,889	1200 V	50 A	75 A	2.2V @ 15V, 25A	190 W	4.2mJ	Standard	155 nC	50ns/560ns	600V, 25A, 22Ohm, 15V	-	-40°C ~ 150°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-1