Page 156 - Transistors - IGBTs - Single | Discrete Semiconductor Products

IRG7PK42UD1MPBF
Infineon Technologies

IGBT 1200V DIE

Package: -

Stock4,528
IKD10N60R
Infineon Technologies

IGBT 600V 20A 150W TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,200
IRG4RC10UD
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,120
IRG4PSH71UD
Infineon Technologies

IGBT 1200V 99A 350W SUPER247

Package: TO-274AA

Stock15,036
IXGA90N33TC
IXYS

IGBT 330V 90A 200W TO263AA

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,472
IRGC4069B
Infineon Technologies

IGBT CHIP WAFER

Package: Die

Stock5,968
IXYX50N170C
IXYS

IGBT 1700V 178A PLUS247

Package: TO-247-3

Stock2,400
APT100GT60B2RG
Microsemi Corporation

IGBT 600V 148A 500W SOT247

Package: TO-247-3 Variant

Stock4,512
IXGT24N60B
IXYS

IGBT 600V 24A TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock5,808
NGTG20N60L2TF1G
ON Semiconductor

IGBT 600V 40A 64W TO-3PF

Package: TO-3P-3 Full Pack

Stock5,296
STGB4M65DF2
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, M S

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,032
APT75GN60BG
Microsemi Corporation

IGBT 600V 155A 536W TO247

Package: TO-247-3

Stock22,476
IHW15N120E1XKSA1
Infineon Technologies

IGBT 1200V 15A TO247-3

Package: TO-247-3

Stock9,396
IRG4BC15UD-SPBF
Infineon Technologies

IGBT 600V 14A 49W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock30,600
APT43GA90B
Microsemi Corporation

IGBT 900V 78A 337W TO-247

Package: TO-247-3

Stock4,016
IXXK200N65B4
IXYS

IGBT 650V 370A 1150W TO264

Package: TO-264-3, TO-264AA

Stock4,624
IXYH40N120B3D1
IXYS

IGBT 1200V 86A 480W TO247

Package: TO-247-3

Stock7,584
FGA40T65SHDF
Fairchild/ON Semiconductor

IGBT 650V 80A 268W TO-3PN

Package: TO-3P-3, SC-65-3

Stock10,176
FGA25S125P_SN00337
Fairchild/ON Semiconductor

IGBT 1250V 50A 250W TO-3PN

Package: TO-3P-3, SC-65-3

Stock6,224
ISL9V5036S3ST
Fairchild/ON Semiconductor

IGBT 390V 46A 250W TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock14,820

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG7PK42UD1MPBF	Infineon Technologies	IGBT 1200V DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock4,528	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IKD10N60R	Infineon Technologies	IGBT 600V 20A 150W TO252-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Power - Max: 150W Switching Energy: 590µJ Input Type: Standard Gate Charge: 64nC Td (on/off) @ 25°C: 14ns/192ns Test Condition: 400V, 10A, 23 Ohm, 15V Reverse Recovery Time (trr): 62ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,200	600V	20A	30A	2.1V @ 15V, 10A	150W	590µJ	Standard	64nC	14ns/192ns	400V, 10A, 23 Ohm, 15V	62ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3
IRG4RC10UD	Infineon Technologies	IGBT 600V 8.5A 38W DPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 8.5A Current - Collector Pulsed (Icm): 34A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A Power - Max: 38W Switching Energy: 140µJ (on), 120µJ (off) Input Type: Standard Gate Charge: 15nC Td (on/off) @ 25°C: 40ns/87ns Test Condition: 480V, 5A, 100 Ohm, 15V Reverse Recovery Time (trr): 28ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,120	600V	8.5A	34A	2.6V @ 15V, 5A	38W	140µJ (on), 120µJ (off)	Standard	15nC	40ns/87ns	480V, 5A, 100 Ohm, 15V	28ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak
IRG4PSH71UD	Infineon Technologies	IGBT 1200V 99A 350W SUPER247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 99A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A Power - Max: 350W Switching Energy: 8.8mJ (on), 9.4mJ (off) Input Type: Standard Gate Charge: 380nC Td (on/off) @ 25°C: 46ns/250ns Test Condition: 960V, 70A, 5 Ohm, 15V Reverse Recovery Time (trr): 110ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247 (TO-274AA)	Package: TO-274AA	Stock15,036	1200V	99A	200A	2.7V @ 15V, 70A	350W	8.8mJ (on), 9.4mJ (off)	Standard	380nC	46ns/250ns	960V, 70A, 5 Ohm, 15V	110ns	-55°C ~ 150°C (TJ)	Through Hole	TO-274AA	SUPER-247 (TO-274AA)
IXGA90N33TC	IXYS	IGBT 330V 90A 200W TO263AA IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 45A Power - Max: 200W Switching Energy: - Input Type: Standard Gate Charge: 69nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXGA)	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,472	330V	90A	-	1.8V @ 15V, 45A	200W	-	Standard	69nC	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (IXGA)
IRGC4069B	Infineon Technologies	IGBT CHIP WAFER IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: Die	Stock5,968	600V	35A	-	-	-	-	Standard	-	-	-	-	175°C (TJ)	Surface Mount	Die	Die
IXYX50N170C	IXYS	IGBT 1700V 178A PLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 178A Current - Collector Pulsed (Icm): 460A Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A Power - Max: 1500W Switching Energy: 8.7mJ (on), 5.6mJ (off) Input Type: Standard Gate Charge: 260nC Td (on/off) @ 25°C: 20ns/180ns Test Condition: 850V, 50A, 1 Ohm, 15V Reverse Recovery Time (trr): 44ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	Package: TO-247-3	Stock2,400	1700V	178A	460A	3.7V @ 15V, 50A	1500W	8.7mJ (on), 5.6mJ (off)	Standard	260nC	20ns/180ns	850V, 50A, 1 Ohm, 15V	44ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	PLUS247?-3
APT100GT60B2RG	Microsemi Corporation	IGBT 600V 148A 500W SOT247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 148A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Power - Max: 500W Switching Energy: 3.25mJ (on), 3.125mJ (off) Input Type: Standard Gate Charge: 460nC Td (on/off) @ 25°C: 40ns/320ns Test Condition: 400V, 100A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	Package: TO-247-3 Variant	Stock4,512	600V	148A	300A	2.5V @ 15V, 100A	500W	3.25mJ (on), 3.125mJ (off)	Standard	460nC	40ns/320ns	400V, 100A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	-
IXGT24N60B	IXYS	IGBT 600V 24A TO268 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock5,808	600V	24A	-	-	-	-	Standard	-	-	-	-	-	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
NGTG20N60L2TF1G	ON Semiconductor	IGBT 600V 40A 64W TO-3PF IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 105A Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A Power - Max: 64W Switching Energy: - Input Type: Standard Gate Charge: 84nC Td (on/off) @ 25°C: 60ns/193ns Test Condition: 300V, 20A, 30 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: -	Package: TO-3P-3 Full Pack	Stock5,296	600V	40A	105A	1.65V @ 15V, 20A	64W	-	Standard	84nC	60ns/193ns	300V, 20A, 30 Ohm, 15V	-	175°C (TJ)	Through Hole	TO-3P-3 Full Pack	-
STGB4M65DF2	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT, M S IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 8A Current - Collector Pulsed (Icm): 16A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Power - Max: 68W Switching Energy: 40µJ (on), 136µJ (off) Input Type: Standard Gate Charge: 15.2nC Td (on/off) @ 25°C: 12ns/86ns Test Condition: 400V, 4A, 47 Ohm, 15V Reverse Recovery Time (trr): 133ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,032	650V	8A	16A	2.1V @ 15V, 4A	68W	40µJ (on), 136µJ (off)	Standard	15.2nC	12ns/86ns	400V, 4A, 47 Ohm, 15V	133ns	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
APT75GN60BG	Microsemi Corporation	IGBT 600V 155A 536W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 155A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A Power - Max: 536W Switching Energy: 2500µJ (on), 2140µJ (off) Input Type: Standard Gate Charge: 485nC Td (on/off) @ 25°C: 47ns/385ns Test Condition: 400V, 75A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock22,476	600V	155A	225A	1.85V @ 15V, 75A	536W	2500µJ (on), 2140µJ (off)	Standard	485nC	47ns/385ns	400V, 75A, 1 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
IHW15N120E1XKSA1	Infineon Technologies	IGBT 1200V 15A TO247-3 IGBT Type: NPT and Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Power - Max: 156W Switching Energy: 300µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Package: TO-247-3	Stock9,396	1200V	30A	45A	2V @ 15V, 15A	156W	300µJ (off)	Standard	90nC	-	-	-	-40°C ~ 150°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IRG4BC15UD-SPBF	Infineon Technologies	IGBT 600V 14A 49W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 42A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A Power - Max: 49W Switching Energy: 240µJ (on), 260µJ (off) Input Type: Standard Gate Charge: 23nC Td (on/off) @ 25°C: 17ns/160ns Test Condition: 480V, 7.8A, 75 Ohm, 15V Reverse Recovery Time (trr): 28ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock30,600	600V	14A	42A	2.4V @ 15V, 7.8A	49W	240µJ (on), 260µJ (off)	Standard	23nC	17ns/160ns	480V, 7.8A, 75 Ohm, 15V	28ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
APT43GA90B	Microsemi Corporation	IGBT 900V 78A 337W TO-247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 129A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 25A Power - Max: 337W Switching Energy: 875µJ (on), 425µJ (off) Input Type: Standard Gate Charge: 116nC Td (on/off) @ 25°C: 12ns/82ns Test Condition: 600V, 25A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock4,016	900V	78A	129A	3.1V @ 15V, 25A	337W	875µJ (on), 425µJ (off)	Standard	116nC	12ns/82ns	600V, 25A, 4.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
IXXK200N65B4	IXYS	IGBT 650V 370A 1150W TO264 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 370A Current - Collector Pulsed (Icm): 1000A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A Power - Max: 1150W Switching Energy: 4.4mJ (on), 2.2mJ (off) Input Type: Standard Gate Charge: 553nC Td (on/off) @ 25°C: 62ns/245ns Test Condition: 400V, 100A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXXK)	Package: TO-264-3, TO-264AA	Stock4,624	650V	370A	1000A	1.7V @ 15V, 160A	1150W	4.4mJ (on), 2.2mJ (off)	Standard	553nC	62ns/245ns	400V, 100A, 1 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 (IXXK)
IXYH40N120B3D1	IXYS	IGBT 1200V 86A 480W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 86A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Power - Max: 480W Switching Energy: 2.7mJ (on), 1.6mJ (off) Input Type: Standard Gate Charge: 87nC Td (on/off) @ 25°C: 22ns/177ns Test Condition: 600V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXYH)	Package: TO-247-3	Stock7,584	1200V	86A	180A	2.9V @ 15V, 40A	480W	2.7mJ (on), 1.6mJ (off)	Standard	87nC	22ns/177ns	600V, 40A, 10 Ohm, 15V	100ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 (IXYH)
FGA40T65SHDF	Fairchild/ON Semiconductor	IGBT 650V 80A 268W TO-3PN IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A Power - Max: 268W Switching Energy: 1.22mJ (on), 440µJ (off) Input Type: Standard Gate Charge: 68nC Td (on/off) @ 25°C: 18ns/64ns Test Condition: 400V, 40A, 6 Ohm, 15V Reverse Recovery Time (trr): 101ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN	Package: TO-3P-3, SC-65-3	Stock10,176	650V	80A	120A	1.81V @ 15V, 40A	268W	1.22mJ (on), 440µJ (off)	Standard	68nC	18ns/64ns	400V, 40A, 6 Ohm, 15V	101ns	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3PN
FGA25S125P_SN00337	Fairchild/ON Semiconductor	IGBT 1250V 50A 250W TO-3PN IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1250V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A Power - Max: 250W Switching Energy: 1.09mJ (on), 580µJ (off) Input Type: Standard Gate Charge: 204nC Td (on/off) @ 25°C: 24ns/502ns Test Condition: 600V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN	Package: TO-3P-3, SC-65-3	Stock6,224	1250V	50A	75A	2.35V @ 15V, 25A	250W	1.09mJ (on), 580µJ (off)	Standard	204nC	24ns/502ns	600V, 25A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3PN
ISL9V5036S3ST	Fairchild/ON Semiconductor	IGBT 390V 46A 250W TO263AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 390V Current - Collector (Ic) (Max): 46A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A Power - Max: 250W Switching Energy: - Input Type: Logic Gate Charge: 32nC Td (on/off) @ 25°C: -/10.8µs Test Condition: 300V, 1 kOhm, 5V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,820	390V	46A	-	1.6V @ 4V, 10A	250W	-	Logic	32nC	-/10.8µs	300V, 1 kOhm, 5V	-	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB
IXYH40N120C4H1	IXYS	IGBT TRENCH 1200V 110A TO247 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 110 A Current - Collector Pulsed (Icm): 230 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A Power - Max: 680 W Switching Energy: 5.55mJ (on), 1.55mJ (off) Input Type: Standard Gate Charge: 92 nC Td (on/off) @ 25°C: 21ns/140ns Test Condition: 960V, 32A, 5Ohm, 15V Reverse Recovery Time (trr): 380 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXYH)	Package: -	Request a Quote	1200 V	110 A	230 A	2.5V @ 15V, 32A	680 W	5.55mJ (on), 1.55mJ (off)	Standard	92 nC	21ns/140ns	960V, 32A, 5Ohm, 15V	380 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 (IXYH)
RGTV80TK65GVC11	Rohm Semiconductor	IGBT TRNCH FIELD 650V 39A TO3PFM IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 39 A Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Power - Max: 85 W Switching Energy: 1.02mJ (on), 710µJ (off) Input Type: Standard Gate Charge: 81 nC Td (on/off) @ 25°C: 39ns/113ns Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	Package: -	Stock1,350	650 V	39 A	160 A	1.9V @ 15V, 40A	85 W	1.02mJ (on), 710µJ (off)	Standard	81 nC	39ns/113ns	400V, 40A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-3PFM, SC-93-3	TO-3PFM
SIGC06T60EX7SA1	Infineon Technologies	IGBT TRENCH FS 600V 10A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): 30 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	10 A	30 A	1.9V @ 15V, 10A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
SIGC121T60NR2CX1SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 150 A Current - Collector Pulsed (Icm): 450 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 125ns/225ns Test Condition: 300V, 150A, 1.5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	150 A	450 A	2.5V @ 15V, 150A	-	-	Standard	-	125ns/225ns	300V, 150A, 1.5Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
RJH30E2DPP-00-T2	Renesas Electronics Corporation	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STGP30H65DFB2	STMicroelectronics	IGBT 600V 60A 258W TO220AB IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Power - Max: 167 W Switching Energy: 270µJ (on), 310µJ (off) Input Type: Standard Gate Charge: 90 nC Td (on/off) @ 25°C: 18.4ns/71ns Test Condition: 400V, 30A, 6.8Ohm, 15V Reverse Recovery Time (trr): 115 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Package: -	Request a Quote	650 V	50 A	90 A	2.1V @ 15V, 30A	167 W	270µJ (on), 310µJ (off)	Standard	90 nC	18.4ns/71ns	400V, 30A, 6.8Ohm, 15V	115 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220
HGTD3N60B3	Harris Corporation	IGBT 600V 7A IPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 7 A Current - Collector Pulsed (Icm): 20 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A Power - Max: 33.3 W Switching Energy: 66µJ (on), 88µJ (off) Input Type: Standard Gate Charge: 21 nC Td (on/off) @ 25°C: 18ns/105ns Test Condition: 480V, 3.5A, 82Ohm, 15V Reverse Recovery Time (trr): 16 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA Supplier Device Package: IPAK	Package: -	Request a Quote	600 V	7 A	20 A	2.1V @ 15V, 3.5A	33.3 W	66µJ (on), 88µJ (off)	Standard	21 nC	18ns/105ns	480V, 3.5A, 82Ohm, 15V	16 ns	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPAK, TO-251AA	IPAK
FGI3040G2-F085	onsemi	ECOSPARK 2-400V IGNITION IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 41 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Power - Max: 150 W Switching Energy: - Input Type: Logic Gate Charge: 21 nC Td (on/off) @ 25°C: 900ns/4.8µs Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Supplier Device Package: TO-262 (I2PAK)	Package: -	Stock1,197	400 V	41 A	-	1.25V @ 4V, 6A	150 W	-	Logic	21 nC	900ns/4.8µs	-	-	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I2PAK, TO-262AA	TO-262 (I2PAK)