Page 18 - Transistors - IGBTs - Single | Discrete Semiconductor Products

IRGP4630DPBF
Infineon Technologies

IGBT 600V 47A 206W TO247AC

Package: TO-247-3

Stock6,912
IRG4BC10SPBF
Infineon Technologies

IGBT 600V 14A 38W TO220AB

Package: TO-220-3

Stock86,220
NGTB40N120FLWG
ON Semiconductor

IGBT 1200V 40A TO247

Package: TO-247-3

Stock6,080
IXXK160N65C4
IXYS

IGBT 650V 290A 940W TO264

Package: TO-264-3, TO-264AA

Stock2,624
IXBT32N300
IXYS

IGBT 3000V 80A 400W TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock2,480
FGPF70N30TDTU
Fairchild/ON Semiconductor

IGBT 300V 49.2W TO220F

Package: TO-220-3 Full Pack

Stock3,888
IXGH50N60C2
IXYS

IGBT 600V 75A 400W TO247

Package: TO-247-3

Stock7,392
IGP10N60TXKSA1
Infineon Technologies

IGBT 600V 20A 110W TO220-3

Package: TO-220-3

Stock4,368
AIHD10N60RATMA1
Infineon Technologies

IC DISCRETE 600V TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,792
IXDH35N60BD1
IXYS

IGBT 600V 60A 250W TO247AD

Package: TO-3P-3 Full Pack

Stock3,312
IXGH30N60C3D1
IXYS

IGBT 600V 60A 220W TO247

Package: TO-247-3

Stock419,796
APT15GT60BRDQ1G
Microsemi Corporation

IGBT 600V 42A 184W TO247

Package: TO-247-3

Stock6,352
FGAF40N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 40A 100W TO3PF

Package: SC-94

Stock17,292
HGT1S10N120BNS
Fairchild/ON Semiconductor

IGBT 1200V 35A 298W TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock20,628
HGTP12N60A4D
Fairchild/ON Semiconductor

IGBT 600V 54A 167W TO220AB

Package: TO-220-3

Stock12,780
STGB20M65DF2
STMicroelectronics

IGBT TRENCH 650V 40A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,256
STGF7H60DF
STMicroelectronics

IGBT 600V 14A 24W TO-220FP

Package: TO-220-3 Full Pack

Stock7,392
STGB15H60DF
STMicroelectronics

IGBT 600V 30A 115W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,480
APT102GA60L
Microsemi Corporation

IGBT 600V 183A 780W TO264

Package: TO-264-3, TO-264AA

Stock5,040
IXBF32N300
IXYS

IGBT 3000V 40A 160W ISOPLUSI4

Package: i4-Pac?-5 (3 leads)

Stock4,848

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRGP4630DPBF	Infineon Technologies	IGBT 600V 47A 206W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 47A Current - Collector Pulsed (Icm): 54A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A Power - Max: 206W Switching Energy: 95µJ (on), 350µJ (off) Input Type: Standard Gate Charge: 35nC Td (on/off) @ 25°C: 40ns/105ns Test Condition: 400V, 18A, 22 Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	Package: TO-247-3	Stock6,912	600V	47A	54A	1.95V @ 15V, 18A	206W	95µJ (on), 350µJ (off)	Standard	35nC	40ns/105ns	400V, 18A, 22 Ohm, 15V	100ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC
IRG4BC10SPBF	Infineon Technologies	IGBT 600V 14A 38W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A Power - Max: 38W Switching Energy: 140µJ (on), 2.58mJ (off) Input Type: Standard Gate Charge: 15nC Td (on/off) @ 25°C: 25ns/630ns Test Condition: 480V, 8A, 100 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock86,220	600V	14A	18A	1.8V @ 15V, 8A	38W	140µJ (on), 2.58mJ (off)	Standard	15nC	25ns/630ns	480V, 8A, 100 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
NGTB40N120FLWG	ON Semiconductor	IGBT 1200V 40A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Power - Max: 260W Switching Energy: 2.6mJ (on), 1.6mJ (off) Input Type: Standard Gate Charge: 415nC Td (on/off) @ 25°C: 130ns/385ns Test Condition: 600V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock6,080	1200V	80A	160A	2.2V @ 15V, 40A	260W	2.6mJ (on), 1.6mJ (off)	Standard	415nC	130ns/385ns	600V, 40A, 10 Ohm, 15V	200ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
IXXK160N65C4	IXYS	IGBT 650V 290A 940W TO264 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 290A Current - Collector Pulsed (Icm): 800A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A Power - Max: 940W Switching Energy: 3.5mJ (on), 1.3mJ (off) Input Type: Standard Gate Charge: 422nC Td (on/off) @ 25°C: 52ns/197ns Test Condition: 400V, 80A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXXK)	Package: TO-264-3, TO-264AA	Stock2,624	650V	290A	800A	2.1V @ 15V, 160A	940W	3.5mJ (on), 1.3mJ (off)	Standard	422nC	52ns/197ns	400V, 80A, 1 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 (IXXK)
IXBT32N300	IXYS	IGBT 3000V 80A 400W TO268 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3000V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 280A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A Power - Max: 400W Switching Energy: - Input Type: Standard Gate Charge: 142nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 1.5µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock2,480	3000V	80A	280A	3.2V @ 15V, 32A	400W	-	Standard	142nC	-	-	1.5µs	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
FGPF70N30TDTU	Fairchild/ON Semiconductor	IGBT 300V 49.2W TO220F IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 20A Power - Max: 49.2W Switching Energy: - Input Type: Standard Gate Charge: 125nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 21ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	Package: TO-220-3 Full Pack	Stock3,888	300V	-	160A	1.5V @ 15V, 20A	49.2W	-	Standard	125nC	-	-	21ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
IXGH50N60C2	IXYS	IGBT 600V 75A 400W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Power - Max: 400W Switching Energy: 380µJ (off) Input Type: Standard Gate Charge: 138nC Td (on/off) @ 25°C: 18ns/115ns Test Condition: 480V, 40A, 2 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock7,392	600V	75A	300A	2.7V @ 15V, 40A	400W	380µJ (off)	Standard	138nC	18ns/115ns	480V, 40A, 2 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
IGP10N60TXKSA1	Infineon Technologies	IGBT 600V 20A 110W TO220-3 IGBT Type: NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A Power - Max: 110W Switching Energy: 430µJ Input Type: Standard Gate Charge: 62nC Td (on/off) @ 25°C: 12ns/215ns Test Condition: 400V, 10A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3	Package: TO-220-3	Stock4,368	600V	20A	30A	2.05V @ 15V, 10A	110W	430µJ	Standard	62nC	12ns/215ns	400V, 10A, 23 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-220-3	PG-TO220-3
AIHD10N60RATMA1	Infineon Technologies	IC DISCRETE 600V TO252-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Power - Max: 150W Switching Energy: 210µJ (on), 380µJ (off) Input Type: Standard Gate Charge: 64nC Td (on/off) @ 25°C: 14ns/192ns Test Condition: 400V, 10A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,792	600V	20A	30A	2.1V @ 15V, 10A	150W	210µJ (on), 380µJ (off)	Standard	64nC	14ns/192ns	400V, 10A, 23 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3
IXDH35N60BD1	IXYS	IGBT 600V 60A 250W TO247AD IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 70A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A Power - Max: 250W Switching Energy: 1.6mJ (on), 800µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: - Test Condition: 300V, 35A, 10 Ohm, 15V Reverse Recovery Time (trr): 40ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247AD (IXDH)	Package: TO-3P-3 Full Pack	Stock3,312	600V	60A	70A	2.7V @ 15V, 35A	250W	1.6mJ (on), 800µJ (off)	Standard	120nC	-	300V, 35A, 10 Ohm, 15V	40ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-247AD (IXDH)
IXGH30N60C3D1	IXYS	IGBT 600V 60A 220W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Power - Max: 220W Switching Energy: 270µJ (on), 90µJ (off) Input Type: Standard Gate Charge: 38nC Td (on/off) @ 25°C: 16ns/42ns Test Condition: 300V, 20A, 5 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock419,796	600V	60A	150A	3V @ 15V, 20A	220W	270µJ (on), 90µJ (off)	Standard	38nC	16ns/42ns	300V, 20A, 5 Ohm, 15V	25ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
APT15GT60BRDQ1G	Microsemi Corporation	IGBT 600V 42A 184W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 42A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: 184W Switching Energy: 150µJ (on), 215µJ (off) Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 6ns/105ns Test Condition: 400V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock6,352	600V	42A	45A	2.5V @ 15V, 15A	184W	150µJ (on), 215µJ (off)	Standard	75nC	6ns/105ns	400V, 15A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
FGAF40N60UFDTU	Fairchild/ON Semiconductor	IGBT 600V 40A 100W TO3PF IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Power - Max: 100W Switching Energy: 470µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 77nC Td (on/off) @ 25°C: 15ns/65ns Test Condition: 300V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): 95ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-94 Supplier Device Package: TO-3PF	Package: SC-94	Stock17,292	600V	40A	160A	3V @ 15V, 20A	100W	470µJ (on), 130µJ (off)	Standard	77nC	15ns/65ns	300V, 20A, 10 Ohm, 15V	95ns	-55°C ~ 150°C (TJ)	Through Hole	SC-94	TO-3PF
HGT1S10N120BNS	Fairchild/ON Semiconductor	IGBT 1200V 35A 298W TO263AB IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A Power - Max: 298W Switching Energy: 320µJ (on), 800µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 23ns/165ns Test Condition: 960V, 10A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock20,628	1200V	35A	80A	2.7V @ 15V, 10A	298W	320µJ (on), 800µJ (off)	Standard	100nC	23ns/165ns	960V, 10A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB
HGTP12N60A4D	Fairchild/ON Semiconductor	IGBT 600V 54A 167W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 54A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 167W Switching Energy: 55µJ (on), 50µJ (off) Input Type: Standard Gate Charge: 78nC Td (on/off) @ 25°C: 17ns/96ns Test Condition: 390V, 12A, 10 Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock12,780	600V	54A	96A	2.7V @ 15V, 12A	167W	55µJ (on), 50µJ (off)	Standard	78nC	17ns/96ns	390V, 12A, 10 Ohm, 15V	30ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
STGB20M65DF2	STMicroelectronics	IGBT TRENCH 650V 40A D2PAK IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Power - Max: 166W Switching Energy: 140µJ (on), 560µJ (off) Input Type: Standard Gate Charge: 63nC Td (on/off) @ 25°C: 26ns/108ns Test Condition: 400V, 20A, 12 Ohm, 15V Reverse Recovery Time (trr): 166ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,256	650V	40A	80A	2V @ 15V, 20A	166W	140µJ (on), 560µJ (off)	Standard	63nC	26ns/108ns	400V, 20A, 12 Ohm, 15V	166ns	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
STGF7H60DF	STMicroelectronics	IGBT 600V 14A 24W TO-220FP IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 28A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A Power - Max: 24W Switching Energy: 99µJ (on), 100µJ (off) Input Type: Standard Gate Charge: 46nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 400V, 7A, 47 Ohm, 15V Reverse Recovery Time (trr): 136ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP	Package: TO-220-3 Full Pack	Stock7,392	600V	14A	28A	1.95V @ 15V, 7A	24W	99µJ (on), 100µJ (off)	Standard	46nC	30ns/160ns	400V, 7A, 47 Ohm, 15V	136ns	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FP
STGB15H60DF	STMicroelectronics	IGBT 600V 30A 115W D2PAK IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Power - Max: 115W Switching Energy: 136µJ (on), 207µJ (off) Input Type: Standard Gate Charge: 81nC Td (on/off) @ 25°C: 24.5ns/118ns Test Condition: 400V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): 103ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,480	600V	30A	60A	2V @ 15V, 15A	115W	136µJ (on), 207µJ (off)	Standard	81nC	24.5ns/118ns	400V, 15A, 10 Ohm, 15V	103ns	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
APT102GA60L	Microsemi Corporation	IGBT 600V 183A 780W TO264 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 183A Current - Collector Pulsed (Icm): 307A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A Power - Max: 780W Switching Energy: 1.354mJ (on), 1.614mJ (off) Input Type: Standard Gate Charge: 294nC Td (on/off) @ 25°C: 28ns/212ns Test Condition: 400V, 62A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 [L]	Package: TO-264-3, TO-264AA	Stock5,040	600V	183A	307A	2.5V @ 15V, 62A	780W	1.354mJ (on), 1.614mJ (off)	Standard	294nC	28ns/212ns	400V, 62A, 4.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 [L]
IXBF32N300	IXYS	IGBT 3000V 40A 160W ISOPLUSI4 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3000V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 250A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A Power - Max: 160W Switching Energy: - Input Type: Standard Gate Charge: 142nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 1.5µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 (3 leads) Supplier Device Package: ISOPLUS i4-PAC?	Package: i4-Pac?-5 (3 leads)	Stock4,848	3000V	40A	250A	3.2V @ 15V, 32A	160W	-	Standard	142nC	-	-	1.5µs	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5 (3 leads)	ISOPLUS i4-PAC?
STGW40NC60V	STMicroelectronics	IGBT 600V 80A 260W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Power - Max: 260W Switching Energy: 330µJ (on), 720µJ (off) Input Type: Standard Gate Charge: 214nC Td (on/off) @ 25°C: 43ns/140ns Test Condition: 390V, 40A, 3.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: TO-247-3	Stock89,352	600V	80A	200A	2.5V @ 15V, 40A	260W	330µJ (on), 720µJ (off)	Standard	214nC	43ns/140ns	390V, 40A, 3.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRG4IBC30KDPBF	Infineon Technologies	IGBT 600V 17A 45W TO220FP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 17A Current - Collector Pulsed (Icm): 34A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 45W Switching Energy: 600µJ (on), 580µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 60ns/160ns Test Condition: 480V, 16A, 23 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	Package: TO-220-3 Full Pack	Stock54,000	600V	17A	34A	2.7V @ 15V, 16A	45W	600µJ (on), 580µJ (off)	Standard	67nC	60ns/160ns	480V, 16A, 23 Ohm, 15V	42ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak
SIGC12T60SNCX1SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): 30 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 29ns/266ns Test Condition: 400V, 10A, 25Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	10 A	30 A	2.5V @ 15V, 10A	-	-	Standard	-	29ns/266ns	400V, 10A, 25Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
LGB8207BTH	Littelfuse Inc.	IGBT 365V 20A 165W D2PAK3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRG4PH50S-205	Infineon Technologies	IGBT 1200V TO247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 141 A Current - Collector Pulsed (Icm): 99 A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A Power - Max: 543 W Switching Energy: 16mJ (off) Input Type: Standard Gate Charge: 227 nC Td (on/off) @ 25°C: -/616ns Test Condition: 600V, 33A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	Package: -	Request a Quote	1200 V	141 A	99 A	1.7V @ 15V, 33A	543 W	16mJ (off)	Standard	227 nC	-/616ns	600V, 33A, 5Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
FGBS3040E1-SN00390	Fairchild Semiconductor	FGBS3040 - SMART IGN-IGBT TO263- IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NGTD13T120F2SWK	onsemi	IGBT TRENCH FIELD ST 1200V WAFER IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Wafer	Package: -	Request a Quote	1200 V	-	60 A	2.4V @ 15V, 15A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Wafer
AOK20B120E2	Alpha & Omega Semiconductor Inc.	IGBT 1200V 20A TO-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 80 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 250 W Switching Energy: 820µJ (off) Input Type: Standard Gate Charge: 53.5 nC Td (on/off) @ 25°C: -/123ns Test Condition: 600V, 20A, 15Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: -	Request a Quote	1200 V	40 A	80 A	2.2V @ 15V, 20A	250 W	820µJ (off)	Standard	53.5 nC	-/123ns	600V, 20A, 15Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247