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Infineon Technologies |
IGBT 1200V DIE
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,944 |
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Infineon Technologies |
IGBT 330V 50A 114W D2PAK
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 330V
- Current - Collector (Ic) (Max): 50A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 24A
- Power - Max: 114W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 46nC
- Td (on/off) @ 25°C: 24ns/89ns
- Test Condition: 196V, 12A, 10 Ohm
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,160 |
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330V | 50A | - | 1.65V @ 15V, 24A | 114W | - | Standard | 46nC | 24ns/89ns | 196V, 12A, 10 Ohm | - | -40°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK |
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Infineon Technologies |
IGBT 600V 8.5A 38W DPAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 8.5A
- Current - Collector Pulsed (Icm): 34A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
- Power - Max: 38W
- Switching Energy: 80µJ (on), 160µJ (off)
- Input Type: Standard
- Gate Charge: 15nC
- Td (on/off) @ 25°C: 19ns/116ns
- Test Condition: 480V, 5A, 100 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,816 |
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600V | 8.5A | 34A | 2.6V @ 15V, 5A | 38W | 80µJ (on), 160µJ (off) | Standard | 15nC | 19ns/116ns | 480V, 5A, 100 Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
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Infineon Technologies |
IGBT 600V 13A 60W TO220AB
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 13A
- Current - Collector Pulsed (Icm): 52A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
- Power - Max: 60W
- Switching Energy: 100µJ (on), 120µJ (off)
- Input Type: Standard
- Gate Charge: 27nC
- Td (on/off) @ 25°C: 21ns/86ns
- Test Condition: 480V, 6.5A, 50 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock6,944 |
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600V | 13A | 52A | 2.1V @ 15V, 6.5A | 60W | 100µJ (on), 120µJ (off) | Standard | 27nC | 21ns/86ns | 480V, 6.5A, 50 Ohm, 15V | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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Microsemi Corporation |
IGBT 600V 78A 337W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 78A
- Current - Collector Pulsed (Icm): 130A
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 26A
- Power - Max: 337W
- Switching Energy: 409µJ (on), 450µJ (off)
- Input Type: Standard
- Gate Charge: 128nC
- Td (on/off) @ 25°C: 16ns/102ns
- Test Condition: 400V, 26A, 4.7 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 [B]
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Package: TO-247-3 |
Stock587,100 |
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600V | 78A | 130A | 1.6V @ 15V, 26A | 337W | 409µJ (on), 450µJ (off) | Standard | 128nC | 16ns/102ns | 400V, 26A, 4.7 Ohm, 15V | - | - | Through Hole | TO-247-3 | TO-247 [B] |
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IXYS |
IGBT 1200V 70A 300W TO264
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 70A
- Current - Collector Pulsed (Icm): 140A
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
- Power - Max: 300W
- Switching Energy: 5mJ (off)
- Input Type: Standard
- Gate Charge: 120nC
- Td (on/off) @ 25°C: 36ns/160ns
- Test Condition: 960V, 35A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 40ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264AA(IXSK)
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Package: TO-264-3, TO-264AA |
Stock5,232 |
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1200V | 70A | 140A | 3.6V @ 15V, 35A | 300W | 5mJ (off) | Standard | 120nC | 36ns/160ns | 960V, 35A, 5 Ohm, 15V | 40ns | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264AA(IXSK) |
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Infineon Technologies |
IGBT CHIP WAFER
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 25A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 160nC
- Td (on/off) @ 25°C: 60ns/230ns
- Test Condition: 600V, 25A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock2,640 |
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1200V | 25A | - | 2.3V @ 15V, 25A | - | - | Standard | 160nC | 60ns/230ns | 600V, 25A, 10 Ohm, 15V | - | -40°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 600V 8A 42W TO220-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 8A
- Current - Collector Pulsed (Icm): 12A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
- Power - Max: 42W
- Switching Energy: 143µJ
- Input Type: Standard
- Gate Charge: 27nC
- Td (on/off) @ 25°C: 14ns/164ns
- Test Condition: 400V, 4A, 47 Ohm, 15V
- Reverse Recovery Time (trr): 28ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
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Package: TO-220-3 |
Stock2,352 |
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600V | 8A | 12A | 2.05V @ 15V, 4A | 42W | 143µJ | Standard | 27nC | 14ns/164ns | 400V, 4A, 47 Ohm, 15V | 28ns | -40°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 |
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IXYS |
IGBT 1200V 260A 1250W PLUS247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 260A
- Current - Collector Pulsed (Icm): 580A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
- Power - Max: 1250W
- Switching Energy: 5.5mJ (on), 12.5mJ (off)
- Input Type: Standard
- Gate Charge: 340nC
- Td (on/off) @ 25°C: 34ns/265ns
- Test Condition: 600V, 80A, 2 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247?-3
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Package: TO-247-3 |
Stock2,896 |
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1200V | 260A | 580A | 2.05V @ 15V, 82A | 1250W | 5.5mJ (on), 12.5mJ (off) | Standard | 340nC | 34ns/265ns | 600V, 80A, 2 Ohm, 15V | - | - | Through Hole | TO-247-3 | PLUS247?-3 |
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Microsemi Corporation |
IGBT 600V 121A 520W TO-264
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 121A
- Current - Collector Pulsed (Icm): 202A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
- Power - Max: 520W
- Switching Energy: 715µJ (on), 607µJ (off)
- Input Type: Standard
- Gate Charge: 198nC
- Td (on/off) @ 25°C: 21ns/133ns
- Test Condition: 400V, 40A, 4.7 Ohm, 15V
- Reverse Recovery Time (trr): 22ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264 [L]
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Package: TO-264-3, TO-264AA |
Stock7,312 |
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600V | 121A | 202A | 2.5V @ 15V, 40A | 520W | 715µJ (on), 607µJ (off) | Standard | 198nC | 21ns/133ns | 400V, 40A, 4.7 Ohm, 15V | 22ns | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 [L] |
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IXYS |
IGBT 600V 300W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 280A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
- Power - Max: 300W
- Switching Energy: 840µJ (on), 660µJ (off)
- Input Type: Standard
- Gate Charge: 115nC
- Td (on/off) @ 25°C: 22ns/130ns
- Test Condition: 480V, 30A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 100ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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Package: TO-247-3 |
Stock52,968 |
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600V | - | 280A | 1.8V @ 15V, 32A | 300W | 840µJ (on), 660µJ (off) | Standard | 115nC | 22ns/130ns | 480V, 30A, 5 Ohm, 15V | 100ns | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXGH) |
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Fairchild/ON Semiconductor |
650V,75A FIELD STOP TRENCH IGBT
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 150A
- Current - Collector Pulsed (Icm): 225A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
- Power - Max: 375W
- Switching Energy: 3.68mJ (on), 1.6mJ (off)
- Input Type: Standard
- Gate Charge: 68nC
- Td (on/off) @ 25°C: 42ns/216ns
- Test Condition: 400V, 75A, 3 Ohm, 15V
- Reverse Recovery Time (trr): 85ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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Package: TO-247-3 |
Stock5,440 |
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650V | 150A | 225A | 2.3V @ 15V, 75A | 375W | 3.68mJ (on), 1.6mJ (off) | Standard | 68nC | 42ns/216ns | 400V, 75A, 3 Ohm, 15V | 85ns | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 |
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Infineon Technologies |
IGBT 650V TO-247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 70A
- Current - Collector Pulsed (Icm): 105A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
- Power - Max: 273W
- Switching Energy: 1.3mJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 105nC
- Td (on/off) @ 25°C: 50ns/105ns
- Test Condition: 400V, 35A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 150ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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Package: TO-247-3 |
Stock7,072 |
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650V | 70A | 105A | 2V @ 15V, 35A | 273W | 1.3mJ (on), 500µJ (off) | Standard | 105nC | 50ns/105ns | 400V, 35A, 10 Ohm, 15V | 150ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC |
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Fairchild/ON Semiconductor |
IGBT 650V 80A 268W TO-3PN
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 80A
- Current - Collector Pulsed (Icm): 120A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 268W
- Switching Energy: 1.01mJ (on), 297µJ (off)
- Input Type: Standard
- Gate Charge: 72.2nC
- Td (on/off) @ 25°C: 19.2ns/65.6ns
- Test Condition: 400V, 40A, 6 Ohm, 15V
- Reverse Recovery Time (trr): 31.8ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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Package: TO-3P-3, SC-65-3 |
Stock10,584 |
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650V | 80A | 120A | 2.1V @ 15V, 40A | 268W | 1.01mJ (on), 297µJ (off) | Standard | 72.2nC | 19.2ns/65.6ns | 400V, 40A, 6 Ohm, 15V | 31.8ns | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN |
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Fairchild/ON Semiconductor |
IGBT 1200V 35A 298W TO263AB
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 35A
- Current - Collector Pulsed (Icm): 80A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
- Power - Max: 298W
- Switching Energy: 320µJ (on), 800µJ (off)
- Input Type: Standard
- Gate Charge: 100nC
- Td (on/off) @ 25°C: 23ns/165ns
- Test Condition: 960V, 10A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,096 |
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1200V | 35A | 80A | 2.7V @ 15V, 10A | 298W | 320µJ (on), 800µJ (off) | Standard | 100nC | 23ns/165ns | 960V, 10A, 10 Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB |
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Infineon Technologies |
IGBT 600V 40A 160W TO220AB
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 40A
- Current - Collector Pulsed (Icm): 160A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
- Power - Max: 160W
- Switching Energy: 320µJ (on), 350µJ (off)
- Input Type: Standard
- Gate Charge: 100nC
- Td (on/off) @ 25°C: 34ns/110ns
- Test Condition: 480V, 20A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock39,600 |
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600V | 40A | 160A | 2.1V @ 15V, 20A | 160W | 320µJ (on), 350µJ (off) | Standard | 100nC | 34ns/110ns | 480V, 20A, 10 Ohm, 15V | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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STMicroelectronics |
IGBT 600V 60A 200W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 100A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: 200W
- Switching Energy: 220µJ (on), 330µJ (off)
- Input Type: Standard
- Gate Charge: 100nC
- Td (on/off) @ 25°C: 31ns/100ns
- Test Condition: 390V, 20A, 3.3 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock16,860 |
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600V | 60A | 100A | 2.5V @ 15V, 20A | 200W | 220µJ (on), 330µJ (off) | Standard | 100nC | 31ns/100ns | 390V, 20A, 3.3 Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK |
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Infineon Technologies |
IGBT 430V 20A 125W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 430V
- Current - Collector (Ic) (Max): 20A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
- Power - Max: 125W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: 27nC
- Td (on/off) @ 25°C: 900ns/6µs
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock10,728 |
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430V | 20A | - | 1.75V @ 5V, 14A | 125W | - | Logic | 27nC | 900ns/6µs | - | - | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK |
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Rohm Semiconductor |
IGBT TRNCH FIELD 650V 80A TO247N
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
- Power - Max: 214 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 110 nC
- Td (on/off) @ 25°C: 42ns/148ns
- Test Condition: 400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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Package: - |
Stock1,320 |
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650 V | 80 A | 160 A | 1.9V @ 15V, 40A | 214 W | - | Standard | 110 nC | 42ns/148ns | 400V, 20A, 10Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247N |
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Infineon Technologies |
IGBT TRENCH FS 600V 10A DIE
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 10 A | 30 A | 1.9V @ 15V, 10A | - | - | Standard | - | - | - | - | -40°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Renesas |
RJH1BF7 - INSULATED GATE BIPOLAR
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Rohm Semiconductor |
IGBT TRNCH FIELD 650V 39A TO3PFM
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 39 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
- Power - Max: 81 W
- Switching Energy: 760µJ (on), 720µJ (off)
- Input Type: Standard
- Gate Charge: 110 nC
- Td (on/off) @ 25°C: 44ns/143ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
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Package: - |
Stock1,350 |
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650 V | 39 A | 160 A | 1.9V @ 15V, 40A | 81 W | 760µJ (on), 720µJ (off) | Standard | 110 nC | 44ns/143ns | 400V, 40A, 10Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM |
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STMicroelectronics |
IGBT TRENCH FS 1200V 100A TO247
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
- Power - Max: 535 W
- Switching Energy: 2mJ (on), 2.1mJ (off)
- Input Type: Standard
- Gate Charge: 210 nC
- Td (on/off) @ 25°C: 40ns/284ns
- Test Condition: 600V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 340 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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Package: - |
Stock1,803 |
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1200 V | 100 A | 200 A | 2.6V @ 15V, 50A | 535 W | 2mJ (on), 2.1mJ (off) | Standard | 210 nC | 40ns/284ns | 600V, 50A, 10Ohm, 15V | 340 ns | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 36ns/250ns
- Test Condition: 400V, 20A, 16Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 20 A | 60 A | 2.5V @ 15V, 20A | - | - | Standard | - | 36ns/250ns | 400V, 20A, 16Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 1200V 141A 543W SUPER220
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 141 A
- Current - Collector Pulsed (Icm): 99 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 33A
- Power - Max: 543 W
- Switching Energy: 15mJ (off)
- Input Type: Standard
- Gate Charge: 151 nC
- Td (on/off) @ 25°C: -/485ns
- Test Condition: 600V, 33A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-273AA
- Supplier Device Package: SUPER-220™ (TO-273AA)
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Package: - |
Stock3,000 |
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1200 V | 141 A | 99 A | 1.8V @ 15V, 33A | 543 W | 15mJ (off) | Standard | 151 nC | -/485ns | 600V, 33A, 5Ohm, 15V | - | -55°C ~ 150°C (TJ) | Through Hole | TO-273AA | SUPER-220™ (TO-273AA) |
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Sanken Electric USA Inc. |
FIELD STOP IGBT WITH FRD 650V/30
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.96V @ 15V, 30A
- Power - Max: 217 W
- Switching Energy: 600µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 60 nC
- Td (on/off) @ 25°C: 30ns/90ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 50 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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Package: - |
Request a Quote |
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650 V | 50 A | 90 A | 1.96V @ 15V, 30A | 217 W | 600µJ (on), 600µJ (off) | Standard | 60 nC | 30ns/90ns | 400V, 30A, 10Ohm, 15V | 50 ns | 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Alpha & Omega Semiconductor Inc. |
IGBT 1200V 40A TO-247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A
- Power - Max: 600 W
- Switching Energy: 3.87mJ (on), 1.25mJ (off)
- Input Type: Standard
- Gate Charge: 140 nC
- Td (on/off) @ 25°C: 90ns/226ns
- Test Condition: 600V, 40A, 7.5Ohm, 15V
- Reverse Recovery Time (trr): 340 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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Package: - |
Request a Quote |
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1200 V | 80 A | 120 A | 2.45V @ 15V, 40A | 600 W | 3.87mJ (on), 1.25mJ (off) | Standard | 140 nC | 90ns/226ns | 600V, 40A, 7.5Ohm, 15V | 340 ns | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 |
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STMicroelectronics |
TRENCH GATE FIELD-STOP, 1200 V,
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 16 A
- Current - Collector Pulsed (Icm): 32 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A
- Power - Max: -
- Switching Energy: 390µJ (on), 370µJ (Off)
- Input Type: Standard
- Gate Charge: 32 nC
- Td (on/off) @ 25°C: 20ns/126ns
- Test Condition: 600V, 8A, 33Ohm, 15V
- Reverse Recovery Time (trr): 103 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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Package: - |
Request a Quote |
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1200 V | 16 A | 32 A | 2.3V @ 15V, 8A | - | 390µJ (on), 370µJ (Off) | Standard | 32 nC | 20ns/126ns | 600V, 8A, 33Ohm, 15V | 103 ns | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 |
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