Page 70 - Transistors - IGBTs - Single | Discrete Semiconductor Products

IXGH15N120B2D1
IXYS

IGBT 1200V 30A 192W TO247AD

Package: TO-247-3

Stock3,568
IXGA150N30TC
IXYS

IGBT 300V 150A TO263AA

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,952
STGW35NC60WD
STMicroelectronics

IGBT 600V 70A 260W TO247

Package: TO-247-3

Stock92,028
IXSK40N60CD1
IXYS

IGBT 600V 75A 280W TO264

Package: TO-264-3, TO-264AA

Stock6,720
APT11GF120KRG
Microsemi Corporation

IGBT 1200V 25A 156W TO220

Package: TO-220-3

Stock7,856
IRGSL4B60KD1PBF
Infineon Technologies

IGBT 600V 11A 63W TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,552
IXGK320N60A3
IXYS

IGBT 600V 320A 1000W TO264AA

Package: TO-264-3, TO-264AA

Stock7,248
IXGH24N170
IXYS

IGBT 1700V 50A 250W TO247AD

Package: TO-247-3

Stock6,496
FGY40T120SMD
Fairchild/ON Semiconductor

IGBT 1200V 80A TO-247

Package: TO-247-3

Stock3,440
IXGT45N120
IXYS

IGBT 1200V 75A 300W TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,312
IXGQ20N120B
IXYS

IGBT 1200V 40A 190W TO3P

Package: TO-3P-3, SC-65-3

Stock3,648
ISL9V3040S3ST
Fairchild/ON Semiconductor

IGBT 430V 21A 150W TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock1,595,160
RJP4009ANS-01#Q6
Renesas Electronics America

IGBT 400V

Package: 8-VDFN

Stock14,796
STGB3NC120HDT4
STMicroelectronics

IGBT 1200V 14A 75W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,520
IRGP4650DPBF
Infineon Technologies

IGBT 600V 76A 268W TO247AC

Package: TO-247-3

Stock6,480
STGWT60H65FB
STMicroelectronics

IGBT 650V 80A 375W TO3P-3L

Package: TO-3P-3, SC-65-3

Stock16,380
FGA5065ADF
Fairchild/ON Semiconductor

IGBT 650V 100A TO-3PN

Package: TO-3P-3, SC-65-3

Stock9,168
APT80GA90B
Microsemi Corporation

IGBT 900V 145A 625W TO247

Package: TO-247-3

Stock9,192
NTE3300
NTE Electronics, Inc

IGBT-N-CHAN ENHANCEMENT

Package: -

Request a Quote
AOK40B65HQ2
Alpha & Omega Semiconductor Inc.

IGBT 40A

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IXGH15N120B2D1	IXYS	IGBT 1200V 30A 192W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 15A Power - Max: 192W Switching Energy: 1.4mJ (off) Input Type: Standard Gate Charge: 86nC Td (on/off) @ 25°C: 25ns/165ns Test Condition: 960V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): 165ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock3,568	1200V	30A	60A	3.3V @ 15V, 15A	192W	1.4mJ (off)	Standard	86nC	25ns/165ns	960V, 15A, 10 Ohm, 15V	165ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
IXGA150N30TC	IXYS	IGBT 300V 150A TO263AA IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 150A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXGA)	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,952	300V	150A	-	-	-	-	Standard	-	-	-	-	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (IXGA)
STGW35NC60WD	STMicroelectronics	IGBT 600V 70A 260W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A Power - Max: 260W Switching Energy: 305µJ (on), 181µJ (off) Input Type: Standard Gate Charge: 102nC Td (on/off) @ 25°C: 29.5ns/118ns Test Condition: 390V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): 40ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: TO-247-3	Stock92,028	600V	70A	150A	2.6V @ 15V, 20A	260W	305µJ (on), 181µJ (off)	Standard	102nC	29.5ns/118ns	390V, 20A, 10 Ohm, 15V	40ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXSK40N60CD1	IXYS	IGBT 600V 75A 280W TO264 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Power - Max: 280W Switching Energy: 1mJ (off) Input Type: Standard Gate Charge: 190nC Td (on/off) @ 25°C: 50ns/70ns Test Condition: 480V, 40A, 2.7 Ohm, 15V Reverse Recovery Time (trr): 35ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264AA(IXSK)	Package: TO-264-3, TO-264AA	Stock6,720	600V	75A	150A	2.5V @ 15V, 40A	280W	1mJ (off)	Standard	190nC	50ns/70ns	480V, 40A, 2.7 Ohm, 15V	35ns	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264AA(IXSK)
APT11GF120KRG	Microsemi Corporation	IGBT 1200V 25A 156W TO220 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 25A Current - Collector Pulsed (Icm): 44A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A Power - Max: 156W Switching Energy: 300µJ (on), 285µJ (off) Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 7ns/100ns Test Condition: 800V, 8A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]	Package: TO-220-3	Stock7,856	1200V	25A	44A	3V @ 15V, 8A	156W	300µJ (on), 285µJ (off)	Standard	65nC	7ns/100ns	800V, 8A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220 [K]
IRGSL4B60KD1PBF	Infineon Technologies	IGBT 600V 11A 63W TO262 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 22A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A Power - Max: 63W Switching Energy: 73µJ (on), 47µJ (off) Input Type: Standard Gate Charge: 12nC Td (on/off) @ 25°C: 22ns/100ns Test Condition: 400V, 4A, 100 Ohm, 15V Reverse Recovery Time (trr): 93ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,552	600V	11A	22A	2.5V @ 15V, 4A	63W	73µJ (on), 47µJ (off)	Standard	12nC	22ns/100ns	400V, 4A, 100 Ohm, 15V	93ns	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262
IXGK320N60A3	IXYS	IGBT 600V 320A 1000W TO264AA IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 320A Current - Collector Pulsed (Icm): 700A Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A Power - Max: 1000W Switching Energy: - Input Type: Standard Gate Charge: 560nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXGK)	Package: TO-264-3, TO-264AA	Stock7,248	600V	320A	700A	1.25V @ 15V, 100A	1000W	-	Standard	560nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 (IXGK)
IXGH24N170	IXYS	IGBT 1700V 50A 250W TO247AD IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 24A Power - Max: 250W Switching Energy: 8mJ (off) Input Type: Standard Gate Charge: 106nC Td (on/off) @ 25°C: 42ns/200ns Test Condition: 1360V, 50A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock6,496	1700V	50A	150A	3.3V @ 15V, 24A	250W	8mJ (off)	Standard	106nC	42ns/200ns	1360V, 50A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
FGY40T120SMD	Fairchild/ON Semiconductor	IGBT 1200V 80A TO-247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 882W Switching Energy: 2.7mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 370nC Td (on/off) @ 25°C: 40ns/475ns Test Condition: 600V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 65ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock3,440	1200V	80A	160A	2.4V @ 15V, 40A	882W	2.7mJ (on), 1.1mJ (off)	Standard	370nC	40ns/475ns	600V, 40A, 10 Ohm, 15V	65ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
IXGT45N120	IXYS	IGBT 1200V 75A 300W TO268 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A Power - Max: 300W Switching Energy: 14mJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 55ns/370ns Test Condition: 960V, 45A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,312	1200V	75A	180A	2.5V @ 15V, 45A	300W	14mJ (off)	Standard	170nC	55ns/370ns	960V, 45A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
IXGQ20N120B	IXYS	IGBT 1200V 40A 190W TO3P IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Power - Max: 190W Switching Energy: 2.1mJ (off) Input Type: Standard Gate Charge: 62nC Td (on/off) @ 25°C: 20ns/270ns Test Condition: 960V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): 40ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	Package: TO-3P-3, SC-65-3	Stock3,648	1200V	40A	100A	3.4V @ 15V, 20A	190W	2.1mJ (off)	Standard	62nC	20ns/270ns	960V, 20A, 10 Ohm, 15V	40ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
ISL9V3040S3ST	Fairchild/ON Semiconductor	IGBT 430V 21A 150W TO263AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 430V Current - Collector (Ic) (Max): 21A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A Power - Max: 150W Switching Energy: - Input Type: Logic Gate Charge: 17nC Td (on/off) @ 25°C: -/4.8µs Test Condition: 300V, 1 kOhm, 5V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock1,595,160	430V	21A	-	1.6V @ 4V, 6A	150W	-	Logic	17nC	-/4.8µs	300V, 1 kOhm, 5V	-	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB
RJP4009ANS-01#Q6	Renesas Electronics America	IGBT 400V IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 9V @ 2.5V, 150A Power - Max: 1.8W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Supplier Device Package: -	Package: 8-VDFN	Stock14,796	400V	-	150A	9V @ 2.5V, 150A	1.8W	-	Standard	-	-	-	-	-40°C ~ 150°C (TJ)	Surface Mount	8-VDFN	-
STGB3NC120HDT4	STMicroelectronics	IGBT 1200V 14A 75W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 20A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Power - Max: 75W Switching Energy: 236µJ (on), 290µJ (off) Input Type: Standard Gate Charge: 24nC Td (on/off) @ 25°C: 15ns/118ns Test Condition: 800V, 3A, 10 Ohm, 15V Reverse Recovery Time (trr): 51ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,520	1200V	14A	20A	2.8V @ 15V, 3A	75W	236µJ (on), 290µJ (off)	Standard	24nC	15ns/118ns	800V, 3A, 10 Ohm, 15V	51ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IRGP4650DPBF	Infineon Technologies	IGBT 600V 76A 268W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 76A Current - Collector Pulsed (Icm): 105A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A Power - Max: 268W Switching Energy: 390µJ (on), 632µJ (off) Input Type: Standard Gate Charge: 104nC Td (on/off) @ 25°C: 46ns/105ns Test Condition: 400V, 35A, 10 Ohm, 15V Reverse Recovery Time (trr): 120ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	Package: TO-247-3	Stock6,480	600V	76A	105A	1.9V @ 15V, 35A	268W	390µJ (on), 632µJ (off)	Standard	104nC	46ns/105ns	400V, 35A, 10 Ohm, 15V	120ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC
STGWT60H65FB	STMicroelectronics	IGBT 650V 80A 375W TO3P-3L IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Power - Max: 375W Switching Energy: 1.09mJ (on), 626µJ (off) Input Type: Standard Gate Charge: 306nC Td (on/off) @ 25°C: 51ns/160ns Test Condition: 400V, 60A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	Package: TO-3P-3, SC-65-3	Stock16,380	650V	80A	240A	2.3V @ 15V, 60A	375W	1.09mJ (on), 626µJ (off)	Standard	306nC	51ns/160ns	400V, 60A, 5 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
FGA5065ADF	Fairchild/ON Semiconductor	IGBT 650V 100A TO-3PN IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Power - Max: 268W Switching Energy: 1.35mJ (on), 309µJ (off) Input Type: Standard Gate Charge: 72.2nC Td (on/off) @ 25°C: 20.8ns/62.4ns Test Condition: 400V, 50A, 6 Ohm, 15V Reverse Recovery Time (trr): 31.8ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN	Package: TO-3P-3, SC-65-3	Stock9,168	650V	100A	150A	2.2V @ 15V, 50A	268W	1.35mJ (on), 309µJ (off)	Standard	72.2nC	20.8ns/62.4ns	400V, 50A, 6 Ohm, 15V	31.8ns	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3PN
APT80GA90B	Microsemi Corporation	IGBT 900V 145A 625W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 145A Current - Collector Pulsed (Icm): 239A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A Power - Max: 625W Switching Energy: 1652µJ (on), 1389µJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 18ns/149ns Test Condition: 600V, 47A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock9,192	900V	145A	239A	3.1V @ 15V, 47A	625W	1652µJ (on), 1389µJ (off)	Standard	200nC	18ns/149ns	600V, 47A, 4.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
NTE3300	NTE Electronics, Inc	IGBT-N-CHAN ENHANCEMENT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): 130 A Vce(on) (Max) @ Vge, Ic: 8V @ 20V, 130A Power - Max: 30 W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 150ns/450ns Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack	Package: -	Request a Quote	400 V	10 A	130 A	8V @ 20V, 130A	30 W	-	Standard	-	150ns/450ns	-	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220 Full Pack
AOK40B65HQ2	Alpha & Omega Semiconductor Inc.	IGBT 40A IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Power - Max: 312 W Switching Energy: 1.19mJ (on), 380µJ (off) Input Type: Standard Gate Charge: 61 nC Td (on/off) @ 25°C: 31ns/110ns Test Condition: 400V, 40A, 7.5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: -	Request a Quote	650 V	80 A	120 A	2.6V @ 15V, 40A	312 W	1.19mJ (on), 380µJ (off)	Standard	61 nC	31ns/110ns	400V, 40A, 7.5Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
RGS60NL65DHRBTL	Rohm Semiconductor	IGBT TRENCH FS 650V 59A TO263L IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 59 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Power - Max: 228 W Switching Energy: 650µJ (on), 790µJ (off) Input Type: Standard Gate Charge: 36 nC Td (on/off) @ 25°C: 31ns/94ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 95 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263L	Package: -	Stock2,970	650 V	59 A	90 A	2.1V @ 15V, 30A	228 W	650µJ (on), 790µJ (off)	Standard	36 nC	31ns/94ns	400V, 30A, 10Ohm, 15V	95 ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263L
GT30J121-Q	Toshiba Semiconductor and Storage	IGBT 600V 30A 170W TO3PN IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A Power - Max: 170 W Switching Energy: 1mJ (on), 800µJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 90ns/300ns Test Condition: 300V, 30A, 24Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	Package: -	Stock171	600 V	30 A	60 A	2.45V @ 15V, 30A	170 W	1mJ (on), 800µJ (off)	Standard	-	90ns/300ns	300V, 30A, 24Ohm, 15V	-	-	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)
FGD3040G2-SN00353V	onsemi	FGD3040G2-SN00353V IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK)	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)
IXXP50N60B3	IXYS	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 120 A Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A Power - Max: 600 W Switching Energy: 670µJ (on), 1.2mJ (off) Input Type: Standard Gate Charge: 70 nC Td (on/off) @ 25°C: 27ns/150ns Test Condition: 360V, 36A, 5Ohm, 15V Reverse Recovery Time (trr): 40 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	Package: -	Request a Quote	600 V	120 A	200 A	1.8V @ 15V, 36A	600 W	670µJ (on), 1.2mJ (off)	Standard	70 nC	27ns/150ns	360V, 36A, 5Ohm, 15V	40 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXGA20N250HV-TRL	IXYS	DISC IGBT NPT VERY HI VOLTAGE TO IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 105 A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A Power - Max: 150 W Switching Energy: - Input Type: Standard Gate Charge: 53 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV	Package: -	Request a Quote	2500 V	30 A	105 A	3.1V @ 15V, 20A	150 W	-	Standard	53 nC	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263HV
SIGC81T60NCX1SA3	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 95ns/200ns Test Condition: 300V, 100A, 2.2Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	100 A	300 A	2.5V @ 15V, 100A	-	-	Standard	-	95ns/200ns	300V, 100A, 2.2Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IXYH85N120C4	IXYS	IGBT 1200V 240A TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 240 A Current - Collector Pulsed (Icm): 420 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A Power - Max: 1150 W Switching Energy: 4.3mJ (on), 2mJ (off) Input Type: Standard Gate Charge: 192 nC Td (on/off) @ 25°C: 35ns/280ns Test Condition: 600V, 50A, 5Ohm, 15V Reverse Recovery Time (trr): 60 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH)	Package: -	Stock51	1200 V	240 A	420 A	2.5V @ 15V, 85A	1150 W	4.3mJ (on), 2mJ (off)	Standard	192 nC	35ns/280ns	600V, 50A, 5Ohm, 15V	60 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)
IGD10N65T6ARMA1	Infineon Technologies	IGBT TRENCH FS 650V 23A TO252-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 23 A Current - Collector Pulsed (Icm): 42.5 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A Power - Max: 75 W Switching Energy: 200µJ (on), 70µJ (off) Input Type: Standard Gate Charge: 27 nC Td (on/off) @ 25°C: 30ns/106ns Test Condition: 400V, 8.5A, 47Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	Package: -	Stock8,970	650 V	23 A	42.5 A	1.9V @ 15V, 8.5A	75 W	200µJ (on), 70µJ (off)	Standard	27 nC	30ns/106ns	400V, 8.5A, 47Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	PG-TO252-3