Page 80 - Transistors - IGBTs - Single | Discrete Semiconductor Products

IRG7PH50K10D-EPBF
Infineon Technologies

IGBT 1200V 90A 400W TO247AD

Package: TO-247-3

Stock5,584
IRG4BH20K-L
Infineon Technologies

IGBT 1200V 11A 60W TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,736
IRG4PSC71K
Infineon Technologies

IGBT 600V 85A 350W SUPER247

Package: TO-274AA

Stock103,464
IXSH24N60A
IXYS

IGBT 600V 48A 150W TO247

Package: TO-247-3

Stock390,000
IXGH12N60BD1
IXYS

IGBT 600V 24A 100W TO247AD

Package: TO-247-3

Stock4,944
IXGA12N60B
IXYS

IGBT 600V 24A 100W TO263AA

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,680
HGT1S3N60A4DS9A
Fairchild/ON Semiconductor

IGBT 600V 17A 70W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock60,000
FGB20N6S2
Fairchild/ON Semiconductor

IGBT 600V 28A 125W TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,976
IGW03N120H2FKSA1
Infineon Technologies

IGBT 1200V 9.6A 62.5W TO247-3

Package: TO-247-3

Stock6,752
IRGC4263B
Infineon Technologies

IGBT CHIP WAFER

Package: Die

Stock2,976
RJH65T47DPQ-A0#T0
Renesas Electronics America

IGBT TRENCH 650V 90A TO247A

Package: TO-247-3

Stock7,216
SGF80N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 80A 110W TO3PF

Package: SC-94

Stock18,132
IXGA12N120A3
IXYS

IGBT 1200V 22A 100W TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,072
STGP3HF60HD
STMicroelectronics

IGBT BIPO 600V 3A TO220

Package: TO-220-3

Stock5,344
STGWA19NC60HD
STMicroelectronics

IGBT 600V 52A 208W TO247

Package: TO-247-3

Stock630,360
IXYK100N120C3
IXYS

IGBT 1200V 188A 1150W TO264

Package: TO-264-3, TO-264AA

Stock6,072
STGB18N40LZT4
STMicroelectronics

IGBT 420V 30A 150W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock196,716
STGB40H65FB
STMicroelectronics

IGBT BIPO 650V 40A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,184
IRGS15B60KDTRRP
Infineon Technologies

IGBT 600V 31A 208W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock18,768
RGS50TSX2HRC11
Rohm Semiconductor

IGBT TRENCH FLD 1200V 50A TO247N

Package: -

Stock1,338

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG7PH50K10D-EPBF	Infineon Technologies	IGBT 1200V 90A 400W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A Power - Max: 400W Switching Energy: 2.3mJ (on), 1.6mJ (off) Input Type: Standard Gate Charge: 300nC Td (on/off) @ 25°C: 90ns/340ns Test Condition: 600V, 35A, 5 Ohm, 15V Reverse Recovery Time (trr): 130ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	Package: TO-247-3	Stock5,584	1200V	90A	160A	2.4V @ 15V, 35A	400W	2.3mJ (on), 1.6mJ (off)	Standard	300nC	90ns/340ns	600V, 35A, 5 Ohm, 15V	130ns	-40°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD
IRG4BH20K-L	Infineon Technologies	IGBT 1200V 11A 60W TO262 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 22A Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A Power - Max: 60W Switching Energy: 450µJ (on), 440µJ (off) Input Type: Standard Gate Charge: 28nC Td (on/off) @ 25°C: 23ns/93ns Test Condition: 960V, 5A, 50 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,736	1200V	11A	22A	4.3V @ 15V, 5A	60W	450µJ (on), 440µJ (off)	Standard	28nC	23ns/93ns	960V, 5A, 50 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262
IRG4PSC71K	Infineon Technologies	IGBT 600V 85A 350W SUPER247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Power - Max: 350W Switching Energy: 790µJ (on), 1.98mJ (off) Input Type: Standard Gate Charge: 340nC Td (on/off) @ 25°C: 34ns/54ns Test Condition: 480V, 60A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247 (TO-274AA)	Package: TO-274AA	Stock103,464	600V	85A	200A	2.3V @ 15V, 60A	350W	790µJ (on), 1.98mJ (off)	Standard	340nC	34ns/54ns	480V, 60A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-274AA	SUPER-247 (TO-274AA)
IXSH24N60A	IXYS	IGBT 600V 48A 150W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A Power - Max: 150W Switching Energy: 2mJ (off) Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 100ns/450ns Test Condition: 480V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXSH)	Package: TO-247-3	Stock390,000	600V	48A	96A	2.7V @ 15V, 24A	150W	2mJ (off)	Standard	75nC	100ns/450ns	480V, 24A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXSH)
IXGH12N60BD1	IXYS	IGBT 600V 24A 100W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 48A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Power - Max: 100W Switching Energy: 500µJ (off) Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 20ns/150ns Test Condition: 480V, 12A, 18 Ohm, 15V Reverse Recovery Time (trr): 35ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock4,944	600V	24A	48A	2.1V @ 15V, 12A	100W	500µJ (off)	Standard	32nC	20ns/150ns	480V, 12A, 18 Ohm, 15V	35ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
IXGA12N60B	IXYS	IGBT 600V 24A 100W TO263AA IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 48A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Power - Max: 100W Switching Energy: 500µJ (off) Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 20ns/150ns Test Condition: 480V, 12A, 18 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXGA)	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,680	600V	24A	48A	2.1V @ 15V, 12A	100W	500µJ (off)	Standard	32nC	20ns/150ns	480V, 12A, 18 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (IXGA)
HGT1S3N60A4DS9A	Fairchild/ON Semiconductor	IGBT 600V 17A 70W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 17A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A Power - Max: 70W Switching Energy: 37µJ (on), 25µJ (off) Input Type: Standard Gate Charge: 21nC Td (on/off) @ 25°C: 6ns/73ns Test Condition: 390V, 3A, 50 Ohm, 15V Reverse Recovery Time (trr): 29ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock60,000	600V	17A	40A	2.7V @ 15V, 3A	70W	37µJ (on), 25µJ (off)	Standard	21nC	6ns/73ns	390V, 3A, 50 Ohm, 15V	29ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB
FGB20N6S2	Fairchild/ON Semiconductor	IGBT 600V 28A 125W TO263AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A Power - Max: 125W Switching Energy: 25µJ (on), 58µJ (off) Input Type: Standard Gate Charge: 30nC Td (on/off) @ 25°C: 7.7ns/87ns Test Condition: 390V, 7A, 25 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,976	600V	28A	40A	2.7V @ 15V, 7A	125W	25µJ (on), 58µJ (off)	Standard	30nC	7.7ns/87ns	390V, 7A, 25 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB
IGW03N120H2FKSA1	Infineon Technologies	IGBT 1200V 9.6A 62.5W TO247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 9.6A Current - Collector Pulsed (Icm): 9.9A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Power - Max: 62.5W Switching Energy: 290µJ Input Type: Standard Gate Charge: 22nC Td (on/off) @ 25°C: 9.2ns/281ns Test Condition: 800V, 3A, 82 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Package: TO-247-3	Stock6,752	1200V	9.6A	9.9A	2.8V @ 15V, 3A	62.5W	290µJ	Standard	22nC	9.2ns/281ns	800V, 3A, 82 Ohm, 15V	-	-40°C ~ 150°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IRGC4263B	Infineon Technologies	IGBT CHIP WAFER IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 60ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: Die	Stock2,976	650V	48A	-	-	-	-	Standard	-	-	-	60ns	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
RJH65T47DPQ-A0#T0	Renesas Electronics America	IGBT TRENCH 650V 90A TO247A IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A Power - Max: 375W Switching Energy: 520µJ (on), 560µJ (off) Input Type: Standard Gate Charge: 127nC Td (on/off) @ 25°C: 45ns/190ns Test Condition: 400V, 45A, 10 Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247A	Package: TO-247-3	Stock7,216	650V	90A	-	2.4V @ 15V, 45A	375W	520µJ (on), 560µJ (off)	Standard	127nC	45ns/190ns	400V, 45A, 10 Ohm, 15V	100ns	175°C (TJ)	Through Hole	TO-247-3	TO-247A
SGF80N60UFTU	Fairchild/ON Semiconductor	IGBT 600V 80A 110W TO3PF IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 220A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Power - Max: 110W Switching Energy: 570µJ (on), 590µJ (off) Input Type: Standard Gate Charge: 175nC Td (on/off) @ 25°C: 23ns/90ns Test Condition: 300V, 40A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-94 Supplier Device Package: TO-3PF	Package: SC-94	Stock18,132	600V	80A	220A	2.6V @ 15V, 40A	110W	570µJ (on), 590µJ (off)	Standard	175nC	23ns/90ns	300V, 40A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	SC-94	TO-3PF
IXGA12N120A3	IXYS	IGBT 1200V 22A 100W TO263 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 22A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Power - Max: 100W Switching Energy: - Input Type: Standard Gate Charge: 20.4nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXGA)	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,072	1200V	22A	60A	3V @ 15V, 12A	100W	-	Standard	20.4nC	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (IXGA)
STGP3HF60HD	STMicroelectronics	IGBT BIPO 600V 3A TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 7.5A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2.95V @ 15V, 1.5A Power - Max: 38W Switching Energy: 19µJ (on), 12µJ (off) Input Type: Standard Gate Charge: 12nC Td (on/off) @ 25°C: 11ns/60ns Test Condition: 400V, 1.5A, 100 Ohm, 15V Reverse Recovery Time (trr): 85ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Package: TO-220-3	Stock5,344	600V	7.5A	18A	2.95V @ 15V, 1.5A	38W	19µJ (on), 12µJ (off)	Standard	12nC	11ns/60ns	400V, 1.5A, 100 Ohm, 15V	85ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
STGWA19NC60HD	STMicroelectronics	IGBT 600V 52A 208W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 52A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A Power - Max: 208W Switching Energy: 85µJ (on), 189µJ (off) Input Type: Standard Gate Charge: 53nC Td (on/off) @ 25°C: 25ns/97ns Test Condition: 390V, 12A, 10 Ohm, 15V Reverse Recovery Time (trr): 31ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: TO-247-3	Stock630,360	600V	52A	60A	2.5V @ 15V, 12A	208W	85µJ (on), 189µJ (off)	Standard	53nC	25ns/97ns	390V, 12A, 10 Ohm, 15V	31ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXYK100N120C3	IXYS	IGBT 1200V 188A 1150W TO264 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 188A Current - Collector Pulsed (Icm): 490A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A Power - Max: 1150W Switching Energy: 6.5mJ (on), 2.9mJ (off) Input Type: Standard Gate Charge: 270nC Td (on/off) @ 25°C: 32ns/123ns Test Condition: 600V, 100A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXYK)	Package: TO-264-3, TO-264AA	Stock6,072	1200V	188A	490A	3.5V @ 15V, 100A	1150W	6.5mJ (on), 2.9mJ (off)	Standard	270nC	32ns/123ns	600V, 100A, 1 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 (IXYK)
STGB18N40LZT4	STMicroelectronics	IGBT 420V 30A 150W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 420V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 1.7V @ 4.5V, 10A Power - Max: 150W Switching Energy: - Input Type: Logic Gate Charge: 29nC Td (on/off) @ 25°C: 650ns/13.5µs Test Condition: 300V, 10A, 5V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock196,716	420V	30A	40A	1.7V @ 4.5V, 10A	150W	-	Logic	29nC	650ns/13.5µs	300V, 10A, 5V	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
STGB40H65FB	STMicroelectronics	IGBT BIPO 650V 40A D2PAK IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 283W Switching Energy: 498µJ (on), 363µJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 40ns/142ns Test Condition: 400V, 40A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,184	650V	80A	160A	2V @ 15V, 40A	283W	498µJ (on), 363µJ (off)	Standard	210nC	40ns/142ns	400V, 40A, 5 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IRGS15B60KDTRRP	Infineon Technologies	IGBT 600V 31A 208W D2PAK IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 62A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 208W Switching Energy: 220µJ (on), 340µJ (off) Input Type: Standard Gate Charge: 56nC Td (on/off) @ 25°C: 34ns/184ns Test Condition: 400V, 15A, 22 Ohm, 15V Reverse Recovery Time (trr): 92ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18,768	600V	31A	62A	2.2V @ 15V, 15A	208W	220µJ (on), 340µJ (off)	Standard	56nC	34ns/184ns	400V, 15A, 22 Ohm, 15V	92ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
RGS50TSX2HRC11	Rohm Semiconductor	IGBT TRENCH FLD 1200V 50A TO247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 75 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Power - Max: 395 W Switching Energy: 1.4mJ (on), 1.65mJ (off) Input Type: Standard Gate Charge: 67 nC Td (on/off) @ 25°C: 37ns/140ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	Package: -	Stock1,338	1200 V	50 A	75 A	2.1V @ 15V, 25A	395 W	1.4mJ (on), 1.65mJ (off)	Standard	67 nC	37ns/140ns	600V, 25A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N
SIGC12T60SNCX7SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): 30 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 29ns/266ns Test Condition: 400V, 10A, 25Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	10 A	30 A	2.5V @ 15V, 10A	-	-	Standard	-	29ns/266ns	400V, 10A, 25Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
FGD3050G2V	onsemi	IGBT 500V 27A DPAK-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 500 V Current - Collector (Ic) (Max): 32 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A Power - Max: 150 W Switching Energy: - Input Type: Logic Gate Charge: 22 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	Package: -	Stock7,392	500 V	32 A	-	1.2V @ 4V, 6A	150 W	-	Logic	22 nC	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK
HGTP15N40C1	Harris Corporation	15A, 400V, N-CHANNEL IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 35 A Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A Power - Max: 75 W Switching Energy: - Input Type: Standard Gate Charge: 33 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Package: -	Request a Quote	400 V	15 A	35 A	3.2V @ 20V, 35A	75 W	-	Standard	33 nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
RGCL80TS60DGC13	Rohm Semiconductor	IGBT TRENCH FS 600V 65A TO247G IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 65 A Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Power - Max: 148 W Switching Energy: 1.11mJ (on), 1.68mJ (off) Input Type: Standard Gate Charge: 98 nC Td (on/off) @ 25°C: 53ns/227ns Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 58 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247G	Package: -	Stock1,800	600 V	65 A	160 A	1.8V @ 15V, 40A	148 W	1.11mJ (on), 1.68mJ (off)	Standard	98 nC	53ns/227ns	400V, 40A, 10Ohm, 15V	58 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247G
IXGT25N250HV	IXYS	IGBT 2500V 60A TO268HV IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 25A Power - Max: 250 W Switching Energy: - Input Type: Standard Gate Charge: 75 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268HV (IXGT)	Package: -	Request a Quote	2500 V	60 A	200 A	2.9V @ 15V, 25A	250 W	-	Standard	75 nC	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	TO-268HV (IXGT)
HGTP10N40C1D	Harris Corporation	17.5A, 400V, N-CHANNEL IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 17.5 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A Power - Max: 75 W Switching Energy: - Input Type: Standard Gate Charge: 19 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Package: -	Request a Quote	400 V	17.5 A	-	3.2V @ 20V, 17.5A	75 W	-	Standard	19 nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
CT30VM-8-G01	Renesas Electronics Corporation	N CHANNEL IGBT, 400V, FOR STROBE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIGC25T60SNCX1SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 44ns/324ns Test Condition: 400V, 30A, 11Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	30 A	90 A	2.5V @ 15V, 30A	-	-	Standard	-	44ns/324ns	400V, 30A, 11Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die