Page 98 - Transistors - IGBTs - Single | Discrete Semiconductor Products

IRGS4607DTRRPBF
Infineon Technologies

IGBT 600V 11A 58W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,224
IRGP4063D1-EPBF
Infineon Technologies

IGBT 600V 100A 330W TO-247AD

Package: TO-247-3

Stock103,464
IRG4BC30S-SPBF
Infineon Technologies

IGBT 600V 34A 100W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock112,128
IRG4PC30K
Infineon Technologies

IGBT 600V 28A 100W TO247AC

Package: TO-247-3

Stock5,792
NGTB25N120LWG
ON Semiconductor

IGBT 1200V 50A 192W TO247-3

Package: TO-247-3

Stock104,196
IXST45N120B
IXYS

IGBT 1200V 75A 300W TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,344
AUIRGP66524D0
Infineon Technologies

IGBT 600V 60A 214W TO-247AC

Package: TO-247-3

Stock2,192
IXGY2N120
IXYS

IGBT 1200V 5A 25W TO252AA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,136
IXGH48N60A3
IXYS

IGBT 600V 120A 300W TO247

Package: TO-247-3

Stock2,848
NGTD20T120F2WP
ON Semiconductor

IGBT TRENCH FIELD STOP 1200V DIE

Package: Die

Stock3,552
APT64GA90B2D30
Microsemi Corporation

IGBT 900V 117A 500W TO-247

Package: TO-247-3 Variant

Stock5,136
RGT16NS65DGTL
Rohm Semiconductor

IGBT 650V 16A 94W TO-263S

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,232
IXYH10N170C
IXYS

IGBT 1.7KV 36A TO247

Package: TO-247-3

Stock3,696
HGTG30N60B3D
Fairchild/ON Semiconductor

IGBT 600V 60A 208W TO247

Package: TO-247-3

Stock6,544
IRG4IBC20UDPBF
Infineon Technologies

IGBT 600V 11.4A 34W TO220FP

Package: TO-220-3 Full Pack

Stock49,200
IHW20N120R5XKSA1
Infineon Technologies

IGBT 1200V 40A 288W TO247

Package: TO-247-3

Stock7,632
IKD06N60RAATMA1
Infineon Technologies

IGBT 600V 12A 100W TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,128
ISL9V2040D3ST
Fairchild/ON Semiconductor

IGBT 430V 10A 130W TO252AA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,920
HGTG20N60A4
Fairchild/ON Semiconductor

IGBT 600V 70A 290W TO247

Package: TO-247-3

Stock432,624
IGC36T120T8LX1SA1
Infineon Technologies

IGBT 1200V 35A DIE

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRGS4607DTRRPBF	Infineon Technologies	IGBT 600V 11A 58W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 12A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A Power - Max: 58W Switching Energy: 140µJ (on), 62µJ (off) Input Type: Standard Gate Charge: 9nC Td (on/off) @ 25°C: 27ns/120ns Test Condition: 400V, 4A, 100 Ohm, 15V Reverse Recovery Time (trr): 48ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,224	600V	11A	12A	2.05V @ 15V, 4A	58W	140µJ (on), 62µJ (off)	Standard	9nC	27ns/120ns	400V, 4A, 100 Ohm, 15V	48ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IRGP4063D1-EPBF	Infineon Technologies	IGBT 600V 100A 330W TO-247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 192A Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A Power - Max: 330W Switching Energy: 1.4mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 150nC Td (on/off) @ 25°C: 60ns/160ns Test Condition: 400V, 48A, 10 Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	Package: TO-247-3	Stock103,464	600V	100A	192A	2.14V @ 15V, 48A	330W	1.4mJ (on), 1.1mJ (off)	Standard	150nC	60ns/160ns	400V, 48A, 10 Ohm, 15V	80ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AD
IRG4BC30S-SPBF	Infineon Technologies	IGBT 600V 34A 100W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 34A Current - Collector Pulsed (Icm): 68A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Power - Max: 100W Switching Energy: 260µJ (on), 3.45mJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 22ns/540ns Test Condition: 480V, 18A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock112,128	600V	34A	68A	1.6V @ 15V, 18A	100W	260µJ (on), 3.45mJ (off)	Standard	50nC	22ns/540ns	480V, 18A, 23 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IRG4PC30K	Infineon Technologies	IGBT 600V 28A 100W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 58A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 360µJ (on), 510µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 26ns/130ns Test Condition: 480V, 16A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	Package: TO-247-3	Stock5,792	600V	28A	58A	2.7V @ 15V, 16A	100W	360µJ (on), 510µJ (off)	Standard	67nC	26ns/130ns	480V, 16A, 23 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
NGTB25N120LWG	ON Semiconductor	IGBT 1200V 50A 192W TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A Power - Max: 192W Switching Energy: 3.4mJ (on), 800µJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 89ns/235ns Test Condition: 600V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock104,196	1200V	50A	200A	2.3V @ 15V, 25A	192W	3.4mJ (on), 800µJ (off)	Standard	200nC	89ns/235ns	600V, 25A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
IXST45N120B	IXYS	IGBT 1200V 75A 300W TO268 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A Power - Max: 300W Switching Energy: 13mJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 36ns/360ns Test Condition: 960V, 45A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,344	1200V	75A	180A	3V @ 15V, 45A	300W	13mJ (off)	Standard	120nC	36ns/360ns	960V, 45A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
AUIRGP66524D0	Infineon Technologies	IGBT 600V 60A 214W TO-247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A Power - Max: 214W Switching Energy: 915µJ (on), 280µJ (off) Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: 30ns/75ns Test Condition: 400V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): 176ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	Package: TO-247-3	Stock2,192	600V	60A	72A	1.9V @ 15V, 24A	214W	915µJ (on), 280µJ (off)	Standard	80nC	30ns/75ns	400V, 24A, 10 Ohm, 15V	176ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC
IXGY2N120	IXYS	IGBT 1200V 5A 25W TO252AA IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 5A Current - Collector Pulsed (Icm): 8A Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 5A Power - Max: 25W Switching Energy: 600µJ (off) Input Type: Standard Gate Charge: 9nC Td (on/off) @ 25°C: 15ns/300ns Test Condition: 960V, 2A, 150 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,136	1200V	5A	8A	4.5V @ 15V, 5A	25W	600µJ (off)	Standard	9nC	15ns/300ns	960V, 2A, 150 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252AA
IXGH48N60A3	IXYS	IGBT 600V 120A 300W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A Power - Max: 300W Switching Energy: 950µJ (on), 2.9mJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 25ns/334ns Test Condition: 480V, 32A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock2,848	600V	120A	300A	1.35V @ 15V, 32A	300W	950µJ (on), 2.9mJ (off)	Standard	110nC	25ns/334ns	480V, 32A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
NGTD20T120F2WP	ON Semiconductor	IGBT TRENCH FIELD STOP 1200V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: Die	Stock3,552	1200V	-	100A	2.4V @ 15V, 20A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
APT64GA90B2D30	Microsemi Corporation	IGBT 900V 117A 500W TO-247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 117A Current - Collector Pulsed (Icm): 193A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A Power - Max: 500W Switching Energy: 1192µJ (on), 1088µJ (off) Input Type: Standard Gate Charge: 162nC Td (on/off) @ 25°C: 18ns/131ns Test Condition: 600V, 38A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	Package: TO-247-3 Variant	Stock5,136	900V	117A	193A	3.1V @ 15V, 38A	500W	1192µJ (on), 1088µJ (off)	Standard	162nC	18ns/131ns	600V, 38A, 4.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	-
RGT16NS65DGTL	Rohm Semiconductor	IGBT 650V 16A 94W TO-263S IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Power - Max: 94W Switching Energy: - Input Type: Standard Gate Charge: 21nC Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPDS (TO-263S)	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,232	650V	16A	24A	2.1V @ 15V, 8A	94W	-	Standard	21nC	13ns/33ns	400V, 8A, 10 Ohm, 15V	42ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	LPDS (TO-263S)
IXYH10N170C	IXYS	IGBT 1.7KV 36A TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 36A Current - Collector Pulsed (Icm): 84A Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A Power - Max: 280W Switching Energy: 1.4mJ (on), 700µJ (off) Input Type: Standard Gate Charge: 46nC Td (on/off) @ 25°C: 14ns/130ns Test Condition: 850V, 10A, 10 Ohm, 15V Reverse Recovery Time (trr): 17ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXYH)	Package: TO-247-3	Stock3,696	1700V	36A	84A	3.8V @ 15V, 10A	280W	1.4mJ (on), 700µJ (off)	Standard	46nC	14ns/130ns	850V, 10A, 10 Ohm, 15V	17ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 (IXYH)
HGTG30N60B3D	Fairchild/ON Semiconductor	IGBT 600V 60A 208W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 220A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 208W Switching Energy: 550µJ (on), 680µJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 36ns/137ns Test Condition: 480V, 30A, 3 Ohm, 15V Reverse Recovery Time (trr): 55ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock6,544	600V	60A	220A	1.9V @ 15V, 30A	208W	550µJ (on), 680µJ (off)	Standard	170nC	36ns/137ns	480V, 30A, 3 Ohm, 15V	55ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
IRG4IBC20UDPBF	Infineon Technologies	IGBT 600V 11.4A 34W TO220FP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11.4A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A Power - Max: 34W Switching Energy: 160µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 39ns/93ns Test Condition: 480V, 6.5A, 50 Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	Package: TO-220-3 Full Pack	Stock49,200	600V	11.4A	52A	2.1V @ 15V, 6.5A	34W	160µJ (on), 130µJ (off)	Standard	27nC	39ns/93ns	480V, 6.5A, 50 Ohm, 15V	37ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak
IHW20N120R5XKSA1	Infineon Technologies	IGBT 1200V 40A 288W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 20A Power - Max: 288W Switching Energy: 750µJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: -/260ns Test Condition: 600V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Package: TO-247-3	Stock7,632	1200V	40A	60A	1.75V @ 15V, 20A	288W	750µJ (off)	Standard	170nC	-/260ns	600V, 20A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IKD06N60RAATMA1	Infineon Technologies	IGBT 600V 12A 100W TO252 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 12A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A Power - Max: 100W Switching Energy: 110µJ (on), 220µJ (off) Input Type: Standard Gate Charge: 48nC Td (on/off) @ 25°C: 12ns/127ns Test Condition: 400V, 6A, 23 Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,128	600V	12A	18A	2.1V @ 15V, 6A	100W	110µJ (on), 220µJ (off)	Standard	48nC	12ns/127ns	400V, 6A, 23 Ohm, 15V	68ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3
ISL9V2040D3ST	Fairchild/ON Semiconductor	IGBT 430V 10A 130W TO252AA IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 430V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.9V @ 4V, 6A Power - Max: 130W Switching Energy: - Input Type: Logic Gate Charge: 12nC Td (on/off) @ 25°C: -/3.64µs Test Condition: 300V, 1 kOhm, 5V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,920	430V	10A	-	1.9V @ 4V, 6A	130W	-	Logic	12nC	-/3.64µs	300V, 1 kOhm, 5V	-	-40°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252AA
HGTG20N60A4	Fairchild/ON Semiconductor	IGBT 600V 70A 290W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 280A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A Power - Max: 290W Switching Energy: 105µJ (on), 150µJ (off) Input Type: Standard Gate Charge: 142nC Td (on/off) @ 25°C: 15ns/73ns Test Condition: 390V, 20A, 3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock432,624	600V	70A	280A	2.7V @ 15V, 20A	290W	105µJ (on), 150µJ (off)	Standard	142nC	15ns/73ns	390V, 20A, 3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
IGC36T120T8LX1SA1	Infineon Technologies	IGBT 1200V 35A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 105 A Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 35A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	1200 V	-	105 A	2.07V @ 15V, 35A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRG7S313UTRLPBF	Infineon Technologies	IGBT PDP 330V 40A D2PAK IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 330 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 60A Power - Max: 78 W Switching Energy: - Input Type: Standard Gate Charge: 33 nC Td (on/off) @ 25°C: 1ns/65ns Test Condition: 196V, 12A, 10Ohm Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: -	Request a Quote	330 V	40 A	-	2.14V @ 15V, 60A	78 W	-	Standard	33 nC	1ns/65ns	196V, 12A, 10Ohm	-	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK
STGB20H65DFB2	STMicroelectronics	TRENCH GATE FIELD-STOP 650 V, 20 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Power - Max: 147 W Switching Energy: 265µJ (on), 214µJ (off) Input Type: Standard Gate Charge: 56 nC Td (on/off) @ 25°C: 16ns/78.8ns Test Condition: 400V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): 215 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Supplier Device Package: D2PAK-3	Package: -	Stock117	650 V	40 A	60 A	2.1V @ 15V, 20A	147 W	265µJ (on), 214µJ (off)	Standard	56 nC	16ns/78.8ns	400V, 20A, 10Ohm, 15V	215 ns	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-4, D2PAK (3 Leads + Tab), TO-263AA	D2PAK-3
IGC99T120T8RQX1SA1	Infineon Technologies	IGBT CHIP IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	1200 V	100 A	300 A	2.42V @ 15V, 100A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
STGWA40H65FB	STMicroelectronics	IGBT IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 283 W Switching Energy: 498µJ (on), 363µJ (off) Input Type: Standard Gate Charge: 210 nC Td (on/off) @ 25°C: 40ns/142ns Test Condition: 400V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Long Leads	Package: -	Stock6	650 V	80 A	160 A	2V @ 15V, 40A	283 W	498µJ (on), 363µJ (off)	Standard	210 nC	40ns/142ns	400V, 40A, 5Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 Long Leads
SIGC14T60NCX7SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 15A, 18Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	21ns/110ns	300V, 15A, 18Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC04T60EX1SA2	Infineon Technologies	IGBT TRENCH FIELD ST 600V 6A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 6 A Current - Collector Pulsed (Icm): 18 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 6A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	6 A	18 A	1.9V @ 15V, 6A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IXYH85N120A4	IXYS	IGBT GENX4 1200V 85A TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 300 A Current - Collector Pulsed (Icm): 520 A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A Power - Max: 1150 W Switching Energy: 4.9mJ (on), 8.3mJ (off) Input Type: Standard Gate Charge: 200 nC Td (on/off) @ 25°C: 40ns/400ns Test Condition: 600V, 60A, 5Ohm, 15V Reverse Recovery Time (trr): 40 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH)	Package: -	Request a Quote	1200 V	300 A	520 A	1.8V @ 15V, 85A	1150 W	4.9mJ (on), 8.3mJ (off)	Standard	200 nC	40ns/400ns	600V, 60A, 5Ohm, 15V	40 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)
RJU7032PJWS-00-W0	Renesas Electronics Corporation	POWER TRS1 CAR POWER IGBT DIO SA IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-