Page 105 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FQD10N20CTM_F080
Fairchild/ON Semiconductor

MOSFET N-CH 200V 7.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,424
FDU8796_F071
Fairchild/ON Semiconductor

MOSFET N-CH 25V 35A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,840
FDU8780_F071
Fairchild/ON Semiconductor

MOSFET N-CH 25V 35A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,848
FDU8770_F071
Fairchild/ON Semiconductor

MOSFET N-CH 25V 35A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,896
FDS7764A
Fairchild/ON Semiconductor

MOSFET N-CH 30V 15A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock507,108
FDS7760A
Fairchild/ON Semiconductor

MOSFET N-CH 30V 15A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock451,752
FDPF3860TYDTU
Fairchild/ON Semiconductor

MOSFET N-CH 100V 20A TO-220F

Package: TO-220-3 Full Pack, Formed Leads

Stock57,600
FDPF17N45T
Fairchild/ON Semiconductor

MOSFET N-CH 450V 17A TO-220F

Package: TO-220-3 Full Pack

Stock2,096
FDH633605
Fairchild/ON Semiconductor

MOSFET N-CH DO-35

Package: DO-204AH, DO-35, Axial

Stock7,920
FDD5N53TM_WS
Fairchild/ON Semiconductor

MOSFET N-CH 530V 4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,448
FDC5614P_D87Z
Fairchild/ON Semiconductor

MOSFET P-CH 60V 3A 6SSOT

Package: SOT-23-6 Thin, TSOT-23-6

Stock3,488
FDB6670AL
Fairchild/ON Semiconductor

MOSFET N-CH 30V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock250,464
FCP7N60_F080
Fairchild/ON Semiconductor

MOSFET N-CH 600V 7A TO-220

Package: TO-220-3

Stock4,048
FCP20N60_F080
Fairchild/ON Semiconductor

MOSFET N-CH 600V 20A TO-220

Package: TO-220-3

Stock2,704
BS170_J35Z
Fairchild/ON Semiconductor

MOSFET N-CH 60V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock5,088
5X49_BG7002B
Fairchild/ON Semiconductor

MOSFET N-CH 100V SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock7,184
FDD45AN06LA0
Fairchild/ON Semiconductor

MOSFET N-CH 60V 25A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock60,120
FDB3860
Fairchild/ON Semiconductor

MOSFET N-CH 100V 6.4A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock139,476
FDD6782A
Fairchild/ON Semiconductor

MOSFET N-CH 25V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock144,012
FDD6780A
Fairchild/ON Semiconductor

MOSFET N-CH 25V 16.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,511,064

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FQD10N20CTM_F080	Fairchild/ON Semiconductor	MOSFET N-CH 200V 7.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,424	MOSFET (Metal Oxide)	200V	7.8A (Tc)	10V	4V @ 250µA	26nC @ 10V	510pF @ 25V	±30V	-	50W (Tc)	360 mOhm @ 3.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDU8796_F071	Fairchild/ON Semiconductor	MOSFET N-CH 25V 35A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,840	MOSFET (Metal Oxide)	25V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	52nC @ 10V	2610pF @ 13V	±20V	-	88W (Tc)	5.7 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
FDU8780_F071	Fairchild/ON Semiconductor	MOSFET N-CH 25V 35A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,848	MOSFET (Metal Oxide)	25V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	29nC @ 10V	1440pF @ 13V	±20V	-	50W (Tc)	8.5 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
FDU8770_F071	Fairchild/ON Semiconductor	MOSFET N-CH 25V 35A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,896	MOSFET (Metal Oxide)	25V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	73nC @ 10V	3720pF @ 13V	±20V	-	115W (Tc)	4 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
FDS7764A	Fairchild/ON Semiconductor	MOSFET N-CH 30V 15A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3451pF @ 15V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock507,108	MOSFET (Metal Oxide)	30V	15A (Ta)	-	2V @ 250µA	40nC @ 4.5V	3451pF @ 15V	-	-	-	7.5 mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS7760A	Fairchild/ON Semiconductor	MOSFET N-CH 30V 15A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3514pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock451,752	MOSFET (Metal Oxide)	30V	15A (Ta)	4.5V, 10V	3V @ 250µA	55nC @ 5V	3514pF @ 15V	±20V	-	2.5W (Ta)	5.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDPF3860TYDTU	Fairchild/ON Semiconductor	MOSFET N-CH 100V 20A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33.8W (Tc) Rds On (Max) @ Id, Vgs: 38.2 mOhm @ 5.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 (Y-Forming) Package / Case: TO-220-3 Full Pack, Formed Leads	Package: TO-220-3 Full Pack, Formed Leads	Stock57,600	MOSFET (Metal Oxide)	100V	20A (Tc)	10V	4.5V @ 250µA	35nC @ 10V	1800pF @ 25V	±20V	-	33.8W (Tc)	38.2 mOhm @ 5.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3 (Y-Forming)	TO-220-3 Full Pack, Formed Leads
FDPF17N45T	Fairchild/ON Semiconductor	MOSFET N-CH 450V 17A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 300 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,096	MOSFET (Metal Oxide)	450V	17A (Tc)	-	5V @ 250µA	50nC @ 10V	2110pF @ 25V	-	-	-	300 mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDH633605	Fairchild/ON Semiconductor	MOSFET N-CH DO-35 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: DO-35 Package / Case: DO-204AH, DO-35, Axial	Package: DO-204AH, DO-35, Axial	Stock7,920	MOSFET (Metal Oxide)	-	-	-	-	-	-	-	-	-	-	-	Through Hole	DO-35	DO-204AH, DO-35, Axial
FDD5N53TM_WS	Fairchild/ON Semiconductor	MOSFET N-CH 530V 4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 530V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,448	MOSFET (Metal Oxide)	530V	4A (Tc)	10V	5V @ 250µA	15nC @ 10V	640pF @ 25V	±30V	-	40W (Tc)	1.5 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDC5614P_D87Z	Fairchild/ON Semiconductor	MOSFET P-CH 60V 3A 6SSOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 759pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 105 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock3,488	MOSFET (Metal Oxide)	60V	3A (Ta)	4.5V, 10V	3V @ 250µA	24nC @ 10V	759pF @ 30V	±20V	-	1.6W (Ta)	105 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FDB6670AL	Fairchild/ON Semiconductor	MOSFET N-CH 30V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock250,464	MOSFET (Metal Oxide)	30V	80A (Ta)	4.5V, 10V	3V @ 250µA	33nC @ 5V	2440pF @ 15V	±20V	-	68W (Tc)	6.5 mOhm @ 40A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCP7N60_F080	Fairchild/ON Semiconductor	MOSFET N-CH 600V 7A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,048	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	5V @ 250µA	30nC @ 10V	920pF @ 25V	±30V	-	83W (Tc)	600 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FCP20N60_F080	Fairchild/ON Semiconductor	MOSFET N-CH 600V 20A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock2,704	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	98nC @ 10V	3080pF @ 25V	±30V	-	208W (Tc)	190 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
BS170_J35Z	Fairchild/ON Semiconductor	MOSFET N-CH 60V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock5,088	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	40pF @ 10V	±20V	-	830mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
5X49_BG7002B	Fairchild/ON Semiconductor	MOSFET N-CH 100V SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-23 (TO-236AB) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,184	MOSFET (Metal Oxide)	100V	-	-	-	-	-	-	-	-	-	-	Surface Mount	SOT-23 (TO-236AB)	TO-236-3, SC-59, SOT-23-3
FDD45AN06LA0	Fairchild/ON Semiconductor	MOSFET N-CH 60V 25A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock60,120	MOSFET (Metal Oxide)	60V	5.2A (Ta), 25A (Tc)	5V, 10V	3V @ 250µA	11nC @ 5V	880pF @ 25V	±20V	-	55W (Tc)	36 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDB3860	Fairchild/ON Semiconductor	MOSFET N-CH 100V 6.4A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 5.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock139,476	MOSFET (Metal Oxide)	100V	6.4A (Ta), 30A (Tc)	10V	4.5V @ 250µA	30nC @ 10V	1740pF @ 50V	±20V	-	3.1W (Ta), 71W (Tc)	37 mOhm @ 5.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDD6782A	Fairchild/ON Semiconductor	MOSFET N-CH 25V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 14.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock144,012	MOSFET (Metal Oxide)	25V	20A (Ta)	4.5V, 10V	3V @ 250µA	27nC @ 10V	1065pF @ 13V	±20V	-	3.7W (Ta), 31W (Tc)	10.5 mOhm @ 14.9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6780A	Fairchild/ON Semiconductor	MOSFET N-CH 25V 16.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 32.6W (Tc) Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 16.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,511,064	MOSFET (Metal Oxide)	25V	16.4A (Ta), 30A (Tc)	4.5V, 10V	3V @ 250µA	24nC @ 10V	1235pF @ 13V	±20V	-	3.7W (Ta), 32.6W (Tc)	8.6 mOhm @ 16.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6778A	Fairchild/ON Semiconductor	MOSFET N-CH 25V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock18,000	MOSFET (Metal Oxide)	25V	12A (Ta), 10A (Tc)	4.5V, 10V	3V @ 250µA	17nC @ 10V	870pF @ 13V	±20V	-	3.7W (Ta), 24W (Tc)	14 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6776A	Fairchild/ON Semiconductor	MOSFET N-CH 25V 17.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 17.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock24,060	MOSFET (Metal Oxide)	25V	17.7A (Ta), 30A (Tc)	4.5V, 10V	3V @ 250µA	29nC @ 10V	1490pF @ 13V	±20V	-	3.7W (Ta), 39W (Tc)	7.5 mOhm @ 17.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
NDS8435A	Fairchild/ON Semiconductor	MOSFET P-CH 30V 7.9A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock31,740	MOSFET (Metal Oxide)	30V	7.9A (Ta)	4.5V, 10V	3V @ 250µA	67nC @ 10V	1800pF @ 15V	±20V	-	2.5W (Ta)	23 mOhm @ 7.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS6688AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V 14.5A 8-SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2510pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 6 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock11,664	MOSFET (Metal Oxide)	30V	14.5A (Ta)	4.5V, 10V	3V @ 250µA	63nC @ 10V	2510pF @ 15V	±20V	-	2.5W (Ta)	6 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FCD4N60TM_WS	Fairchild/ON Semiconductor	MOSFET N-CH 600V 3.9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,528	MOSFET (Metal Oxide)	600V	3.9A (Tc)	10V	5V @ 250µA	16.6nC @ 10V	540pF @ 25V	±30V	-	50W (Tc)	1.2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDB12N50UTM_WS	Fairchild/ON Semiconductor	MOSFET N-CH 500V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,424	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	5V @ 250µA	30nC @ 10V	1395pF @ 25V	±30V	-	165W (Tc)	800 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMS8848NZ	Fairchild/ON Semiconductor	MOSFET N-CH 40V 22.8A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 22.8A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8075pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 22.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,848	MOSFET (Metal Oxide)	40V	22.8A (Ta), 49A (Tc)	4.5V, 10V	3V @ 250µA	152nC @ 10V	8075pF @ 20V	±20V	-	2.5W (Ta), 104W (Tc)	3.1 mOhm @ 22.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDT55AN06LA0	Fairchild/ON Semiconductor	MOSFET N-CH 60V 12.1A SOT223-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.9W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock7,776	MOSFET (Metal Oxide)	60V	12.1A (Tc)	5V, 10V	3V @ 250µA	10nC @ 10V	1130pF @ 25V	±20V	-	8.9W (Tc)	46 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA