Page 22 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FDMS0310S
Fairchild/ON Semiconductor

MOSFET N-CH 30V 19A

Package: 8-PowerTDFN

Stock744,768
FDC645N
Fairchild/ON Semiconductor

MOSFET N-CH 30V 5.5A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock151,824
FDS86242
Fairchild/ON Semiconductor

MOSFET N-CH 150V 4.1A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock442,296
FDD8882
Fairchild/ON Semiconductor

MOSFET N-CH 30V 55A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock58,920
FDS86252
Fairchild/ON Semiconductor

MOSFET N-CH 150V 4.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock10,080
FDFM2N111
Fairchild/ON Semiconductor

MOSFET N-CH 20V 4A 3X3 MLP

Package: 6-MLP, Power33

Stock191,760
FDD8782
Fairchild/ON Semiconductor

MOSFET N-CH 25V 35A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock387,756
FDD8447L_F085
Fairchild/ON Semiconductor

MOSFET N-CH 40V 50A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock510,000
FDC3512
Fairchild/ON Semiconductor

MOSFET N-CH 80V 3A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock329,124
FDMC8588
Fairchild/ON Semiconductor

MOSFET N-CH 25V 40A 8-MLP

Package: 8-PowerTDFN

Stock2,704
FQD8P10TM_F085
Fairchild/ON Semiconductor

MOSFET P-CH 100V 6.6A DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,408
FQD5P10TM
Fairchild/ON Semiconductor

MOSFET P-CH 100V 3.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock471,504
FDMS5362L_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 17.6A POWER56

Package: 8-PowerTDFN

Stock2,400
FQU5P20TU
Fairchild/ON Semiconductor

MOSFET P-CH 200V 3.7A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock8,508
FQP6N40C
Fairchild/ON Semiconductor

MOSFET N-CH 400V 6A TO-220

Package: TO-220-3

Stock104,028
FDS8876
Fairchild/ON Semiconductor

MOSFET N-CH 30V 12.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock962,748
FDD1600N10ALZD
Fairchild/ON Semiconductor

MOSFET N-CH 100V 6.8A TO252-5L

Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD

Stock397,500
FDT459N
Fairchild/ON Semiconductor

MOSFET N-CH 30V 6.5A SOT-223

Package: TO-261-4, TO-261AA

Stock177,132
FDD4243_F085
Fairchild/ON Semiconductor

MOSFET P-CH 40V 6.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock510,000
FDC606P
Fairchild/ON Semiconductor

MOSFET P-CH 12V 6A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock468,528

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDMS0310S	Fairchild/ON Semiconductor	MOSFET N-CH 30V 19A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2820pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock744,768	MOSFET (Metal Oxide)	30V	19A (Ta), 42A (Tc)	4.5V, 10V	3V @ 1mA	46nC @ 10V	2820pF @ 15V	±20V	-	2.5W (Ta), 46W (Tc)	4 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDC645N	Fairchild/ON Semiconductor	MOSFET N-CH 30V 5.5A SSOT-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock151,824	MOSFET (Metal Oxide)	30V	5.5A (Ta)	4.5V, 10V	2V @ 250µA	21nC @ 4.5V	1460pF @ 15V	±12V	-	1.6W (Ta)	26 mOhm @ 6.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FDS86242	Fairchild/ON Semiconductor	MOSFET N-CH 150V 4.1A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock442,296	MOSFET (Metal Oxide)	150V	4.1A (Ta)	6V, 10V	4V @ 250µA	13nC @ 10V	760pF @ 75V	±20V	-	2.5W (Ta), 5W (Tc)	67 mOhm @ 4.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDD8882	Fairchild/ON Semiconductor	MOSFET N-CH 30V 55A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock58,920	MOSFET (Metal Oxide)	30V	12.6A (Ta), 55A (Tc)	4.5V, 10V	2.5V @ 250µA	33nC @ 10V	1260pF @ 15V	±20V	-	55W (Tc)	11.5 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDS86252	Fairchild/ON Semiconductor	MOSFET N-CH 150V 4.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock10,080	MOSFET (Metal Oxide)	150V	4.5A (Ta)	6V, 10V	4V @ 250µA	15nC @ 10V	955pF @ 75V	±20V	-	2.5W (Ta), 5W (Tc)	55 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDFM2N111	Fairchild/ON Semiconductor	MOSFET N-CH 20V 4A 3X3 MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 273pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MicroFET 3x3mm Package / Case: 6-MLP, Power33	Package: 6-MLP, Power33	Stock191,760	MOSFET (Metal Oxide)	20V	4A (Ta)	2.5V, 4.5V	1.5V @ 250µA	3.8nC @ 4.5V	273pF @ 10V	±12V	Schottky Diode (Isolated)	1.7W (Ta)	100 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	MicroFET 3x3mm	6-MLP, Power33
FDD8782	Fairchild/ON Semiconductor	MOSFET N-CH 25V 35A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock387,756	MOSFET (Metal Oxide)	25V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	25nC @ 10V	1220pF @ 13V	±20V	-	50W (Tc)	11 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8447L_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock510,000	MOSFET (Metal Oxide)	40V	50A (Tc)	4.5V, 10V	3V @ 250µA	52nC @ 10V	1970pF @ 20V	±20V	-	65W (Tc)	8.5 mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDC3512	Fairchild/ON Semiconductor	MOSFET N-CH 80V 3A SSOT-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock329,124	MOSFET (Metal Oxide)	80V	3A (Ta)	6V, 10V	4V @ 250µA	18nC @ 10V	634pF @ 40V	±20V	-	1.6W (Ta)	77 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FDMC8588	Fairchild/ON Semiconductor	MOSFET N-CH 25V 40A 8-MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1228pF @ 13V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,704	MOSFET (Metal Oxide)	25V	16.5A (Ta), 40A (Tc)	4.5V, 10V	1.8V @ 250µA	12nC @ 4.5V	1228pF @ 13V	±12V	-	2.4W (Ta), 26W (Tc)	5 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerTDFN
FQD8P10TM_F085	Fairchild/ON Semiconductor	MOSFET P-CH 100V 6.6A DPAK-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,408	MOSFET (Metal Oxide)	100V	6.6A (Tc)	10V	4V @ 250µA	15nC @ 10V	470pF @ 25V	±30V	-	2.5W (Ta), 44W (Tc)	530 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD5P10TM	Fairchild/ON Semiconductor	MOSFET P-CH 100V 3.6A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock471,504	MOSFET (Metal Oxide)	100V	3.6A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	250pF @ 25V	±30V	-	2.5W (Ta), 25W (Tc)	1.05 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS5362L_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 17.6A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 878pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 41.7W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 17.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,400	MOSFET (Metal Oxide)	60V	17.6A (Tc)	4.5V, 10V	3V @ 250µA	21nC @ 10V	878pF @ 25V	±20V	-	41.7W (Tc)	33 mOhm @ 17.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FQU5P20TU	Fairchild/ON Semiconductor	MOSFET P-CH 200V 3.7A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock8,508	MOSFET (Metal Oxide)	200V	3.7A (Tc)	10V	5V @ 250µA	13nC @ 10V	430pF @ 25V	±30V	-	2.5W (Ta), 45W (Tc)	1.4 Ohm @ 1.85A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FQP6N40C	Fairchild/ON Semiconductor	MOSFET N-CH 400V 6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 73W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock104,028	MOSFET (Metal Oxide)	400V	6A (Tc)	10V	4V @ 250µA	20nC @ 10V	625pF @ 25V	±30V	-	73W (Tc)	1 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDS8876	Fairchild/ON Semiconductor	MOSFET N-CH 30V 12.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock962,748	MOSFET (Metal Oxide)	30V	12.5A (Ta)	4.5V, 10V	2.5V @ 250µA	36nC @ 10V	1650pF @ 15V	±20V	-	2.5W (Ta)	8.2 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDD1600N10ALZD	Fairchild/ON Semiconductor	MOSFET N-CH 100V 6.8A TO252-5L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 14.9W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Stock397,500	MOSFET (Metal Oxide)	100V	6.8A (Tc)	5V, 10V	2.8V @ 250µA	3.61nC @ 10V	225pF @ 50V	±20V	-	14.9W (Tc)	160 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-5, DPak (4 Leads + Tab), TO-252AD
FDT459N	Fairchild/ON Semiconductor	MOSFET N-CH 30V 6.5A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock177,132	MOSFET (Metal Oxide)	30V	6.5A (Ta)	4.5V, 10V	2V @ 250µA	17nC @ 10V	365pF @ 15V	±20V	-	3W (Ta)	35 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDD4243_F085	Fairchild/ON Semiconductor	MOSFET P-CH 40V 6.7A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 44 mOhm @ 6.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock510,000	MOSFET (Metal Oxide)	40V	6.7A (Ta), 14A (Tc)	4.5V, 10V	3V @ 250µA	29nC @ 10V	1550pF @ 20V	±20V	-	50W (Tc)	44 mOhm @ 6.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDC606P	Fairchild/ON Semiconductor	MOSFET P-CH 12V 6A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1699pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 26 mOhm @ 6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock468,528	MOSFET (Metal Oxide)	12V	6A (Ta)	1.8V, 4.5V	1.5V @ 250µA	25nC @ 4.5V	1699pF @ 6V	±8V	-	1.6W (Ta)	26 mOhm @ 6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FDS4488	Fairchild/ON Semiconductor	MOSFET N-CH 30V 7.9A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 927pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock711,168	MOSFET (Metal Oxide)	30V	7.9A (Ta)	4.5V, 10V	3V @ 250µA	13nC @ 5V	927pF @ 15V	±25V	-	2.5W (Ta)	22 mOhm @ 7.9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDD86381_F085	Fairchild/ON Semiconductor	MOSFET N-CH 80V 25A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 866pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48.4W (Tj) Rds On (Max) @ Id, Vgs: 21 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,816	MOSFET (Metal Oxide)	80V	25A (Tc)	10V	4V @ 250µA	21nC @ 10V	866pF @ 40V	±20V	-	48.4W (Tj)	21 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD9410_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,072	MOSFET (Metal Oxide)	40V	50A (Tc)	10V	4V @ 250µA	34.5nC @ 10V	1715pF @ 25V	±20V	-	75W (Tc)	4.1 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5N50NZFTM	Fairchild/ON Semiconductor	MOSFET N-CH 500V DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 1.85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock53,640	MOSFET (Metal Oxide)	500V	3.7A (Tc)	10V	5V @ 250µA	12nC @ 10V	485pF @ 25V	±25V	-	62.5W (Tc)	1.75 Ohm @ 1.85A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMC8878_F126	Fairchild/ON Semiconductor	MOSFET N-CH 30V PWR33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,760	MOSFET (Metal Oxide)	30V	9.6A (Ta), 16.5A (Tc)	4.5V, 10V	3V @ 250µA	26nC @ 10V	1230pF @ 15V	±20V	-	2.1W (Ta), 31W (Tc)	14 mOhm @ 9.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FDMS86380_F085	Fairchild/ON Semiconductor	MOSFET N-CH 80V 50A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,296	MOSFET (Metal Oxide)	80V	50A (Tc)	10V	4V @ 250µA	30nC @ 10V	1440pF @ 40V	±20V	-	75W (Tj)	13.4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDMS8880	Fairchild/ON Semiconductor	MOSFET N-CH 30V 13.5A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock38,040	MOSFET (Metal Oxide)	30V	13.5A (Ta), 21A (Tc)	4.5V, 10V	2.5V @ 250µA	33nC @ 10V	1585pF @ 15V	±20V	-	2.5W (Ta), 42W (Tc)	8.5 mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDMC86116LZ	Fairchild/ON Semiconductor	MOSFET N-CH 100V 3.3A 8-MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 103 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock366,468	MOSFET (Metal Oxide)	100V	3.3A (Ta), 7.5A (Tc)	4.5V, 10V	2.2V @ 250µA	6nC @ 10V	310pF @ 50V	±20V	-	2.3W (Ta), 19W (Tc)	103 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN