Page 3 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FDD8445
Fairchild/ON Semiconductor

MOSFET N-CH 40V 70A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,179,012
FDS8842NZ
Fairchild/ON Semiconductor

MOSFET N-CH 40V 14.9A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock30,000
FDD3860
Fairchild/ON Semiconductor

MOSFET N-CH 100V 6.2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock298,500
FDMC8878
Fairchild/ON Semiconductor

MOSFET N-CH 30V 9.6A POWER33

Package: 8-PowerWDFN

Stock680,964
RFD16N05LSM9A
Fairchild/ON Semiconductor

MOSFET N-CH 50V 16A TO-252AA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock307,164
FDC86244
Fairchild/ON Semiconductor

MOSFET N-CH 150V 2.3A 6SSOT

Package: SOT-23-6 Thin, TSOT-23-6

Stock1,932,000
FDD4685
Fairchild/ON Semiconductor

MOSFET P-CH 40V 8.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock327,060
FDD6N50TM_WS
Fairchild/ON Semiconductor

MOSFET N-CH 500V 6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock98,478
FDD8447L
Fairchild/ON Semiconductor

MOSFET N-CH 40V 15.2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,521,588
FQD16N25CTM
Fairchild/ON Semiconductor

MOSFET N-CH 250V 16A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock18,660
FDS8447
Fairchild/ON Semiconductor

MOSFET N-CH 40V 12.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock150,024
FDD6637
Fairchild/ON Semiconductor

MOSFET P-CH 35V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock902,196
FDD4141
Fairchild/ON Semiconductor

MOSFET P-CH 40V 10.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock212,184
FDS86106
Fairchild/ON Semiconductor

MOSFET N-CH 100V 3.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock133,956
NDS9407
Fairchild/ON Semiconductor

MOSFET P-CH 60V 3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock251,736
FDMA86151L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 3.3A 6-MLP

Package: 6-WDFN Exposed Pad

Stock56,796
NDT452AP
Fairchild/ON Semiconductor

MOSFET P-CH 30V 5A SOT-223-4

Package: TO-261-4, TO-261AA

Stock1,386,900
FDS4685
Fairchild/ON Semiconductor

MOSFET P-CH 40V 8.2A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock481,752
2N7000
Fairchild/ON Semiconductor

MOSFET N-CH 60V 200MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock8,016,720
SI4435DY
Fairchild/ON Semiconductor

MOSFET P-CH 30V 8.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock392,700

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDD8445	Fairchild/ON Semiconductor	MOSFET N-CH 40V 70A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,179,012	MOSFET (Metal Oxide)	40V	70A (Tc)	10V	4V @ 250µA	59nC @ 10V	4050pF @ 25V	±20V	-	79W (Tc)	8.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDS8842NZ	Fairchild/ON Semiconductor	MOSFET N-CH 40V 14.9A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3845pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 14.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock30,000	MOSFET (Metal Oxide)	40V	14.9A (Ta)	4.5V, 10V	3V @ 250µA	73nC @ 10V	3845pF @ 15V	±20V	-	2.5W (Ta)	7 mOhm @ 14.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDD3860	Fairchild/ON Semiconductor	MOSFET N-CH 100V 6.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock298,500	MOSFET (Metal Oxide)	100V	6.2A (Ta)	10V	4.5V @ 250µA	31nC @ 10V	1740pF @ 50V	±20V	-	3.1W (Ta), 69W (Tc)	36 mOhm @ 5.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMC8878	Fairchild/ON Semiconductor	MOSFET N-CH 30V 9.6A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3), Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock680,964	MOSFET (Metal Oxide)	30V	9.6A (Ta), 16.5A (Tc)	4.5V, 10V	3V @ 250µA	26nC @ 10V	1230pF @ 15V	±20V	-	2.1W (Ta), 31W (Tc)	14 mOhm @ 9.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3), Power33	8-PowerWDFN
RFD16N05LSM9A	Fairchild/ON Semiconductor	MOSFET N-CH 50V 16A TO-252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 47 mOhm @ 16A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock307,164	MOSFET (Metal Oxide)	50V	16A (Tc)	4V, 5V	2V @ 250mA	80nC @ 10V	-	±10V	-	60W (Tc)	47 mOhm @ 16A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDC86244	Fairchild/ON Semiconductor	MOSFET N-CH 150V 2.3A 6SSOT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,932,000	MOSFET (Metal Oxide)	150V	2.3A (Ta)	6V, 10V	4V @ 250µA	6nC @ 10V	345pF @ 75V	±20V	-	1.6W (Ta)	144 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FDD4685	Fairchild/ON Semiconductor	MOSFET P-CH 40V 8.4A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock327,060	MOSFET (Metal Oxide)	40V	8.4A (Ta), 32A (Tc)	4.5V, 10V	3V @ 250µA	27nC @ 5V	2380pF @ 20V	±20V	-	69W (Tc)	27 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6N50TM_WS	Fairchild/ON Semiconductor	MOSFET N-CH 500V 6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock98,478	MOSFET (Metal Oxide)	500V	6A (Tc)	10V	5V @ 250µA	16.6nC @ 10V	9400pF @ 25V	±30V	-	89W (Tc)	900 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8447L	Fairchild/ON Semiconductor	MOSFET N-CH 40V 15.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,521,588	MOSFET (Metal Oxide)	40V	15.2A (Ta), 50A (Tc)	4.5V, 10V	3V @ 250µA	52nC @ 10V	1970pF @ 20V	±20V	-	3.1W (Ta), 44W (Tc)	8.5 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD16N25CTM	Fairchild/ON Semiconductor	MOSFET N-CH 250V 16A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock18,660	MOSFET (Metal Oxide)	250V	16A (Tc)	10V	4V @ 250µA	53.5nC @ 10V	1080pF @ 25V	±30V	-	160W (Tc)	270 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDS8447	Fairchild/ON Semiconductor	MOSFET N-CH 40V 12.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 12.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock150,024	MOSFET (Metal Oxide)	40V	12.8A (Ta)	4.5V, 10V	3V @ 250µA	49nC @ 10V	2600pF @ 20V	±20V	-	2.5W (Ta)	10.5 mOhm @ 12.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDD6637	Fairchild/ON Semiconductor	MOSFET P-CH 35V 13A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 20V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock902,196	MOSFET (Metal Oxide)	35V	13A (Ta), 55A (Tc)	4.5V, 10V	3V @ 250µA	63nC @ 10V	2370pF @ 20V	±25V	-	3.1W (Ta), 57W (Tc)	11.6 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD4141	Fairchild/ON Semiconductor	MOSFET P-CH 40V 10.8A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2775pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 12.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock212,184	MOSFET (Metal Oxide)	40V	10.8A (Ta), 50A (Tc)	4.5V, 10V	3V @ 250µA	50nC @ 10V	2775pF @ 20V	±20V	-	2.4W (Ta), 69W (Tc)	12.3 mOhm @ 12.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDS86106	Fairchild/ON Semiconductor	MOSFET N-CH 100V 3.4A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 208pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta) Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock133,956	MOSFET (Metal Oxide)	100V	3.4A (Ta)	6V, 10V	4V @ 250µA	4nC @ 10V	208pF @ 50V	±20V	-	5W (Ta)	105 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NDS9407	Fairchild/ON Semiconductor	MOSFET P-CH 60V 3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 732pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock251,736	MOSFET (Metal Oxide)	60V	3A (Ta)	4.5V, 10V	3V @ 250µA	22nC @ 10V	732pF @ 30V	±20V	-	2.5W (Ta)	150 mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMA86151L	Fairchild/ON Semiconductor	MOSFET N-CH 100V 3.3A 6-MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 88 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock56,796	MOSFET (Metal Oxide)	100V	3.3A (Ta)	4.5V, 10V	3V @ 250µA	7.3nC @ 10V	450pF @ 50V	±20V	-	2.4W (Ta)	88 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-WDFN Exposed Pad
NDT452AP	Fairchild/ON Semiconductor	MOSFET P-CH 30V 5A SOT-223-4 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock1,386,900	MOSFET (Metal Oxide)	30V	5A (Ta)	4.5V, 10V	2.8V @ 250µA	30nC @ 10V	690pF @ 15V	±20V	-	3W (Ta)	65 mOhm @ 5A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDS4685	Fairchild/ON Semiconductor	MOSFET P-CH 40V 8.2A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1872pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 27 mOhm @ 8.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock481,752	MOSFET (Metal Oxide)	40V	8.2A (Ta)	4.5V, 10V	3V @ 250µA	27nC @ 5V	1872pF @ 20V	±20V	-	2.5W (Ta)	27 mOhm @ 8.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
2N7000	Fairchild/ON Semiconductor	MOSFET N-CH 60V 200MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock8,016,720	MOSFET (Metal Oxide)	60V	200mA (Ta)	4.5V, 10V	3V @ 1mA	-	50pF @ 25V	±20V	-	400mW (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
SI4435DY	Fairchild/ON Semiconductor	MOSFET P-CH 30V 8.8A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1604pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock392,700	MOSFET (Metal Oxide)	30V	8.8A (Ta)	4.5V, 10V	3V @ 250µA	24nC @ 5V	1604pF @ 15V	±20V	-	2.5W (Ta)	20 mOhm @ 8.8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FQD7P20TM	Fairchild/ON Semiconductor	MOSFET P-CH 200V 5.7A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 690 mOhm @ 2.85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock753,396	MOSFET (Metal Oxide)	200V	5.7A (Tc)	10V	5V @ 250µA	25nC @ 10V	770pF @ 25V	±30V	-	2.5W (Ta), 55W (Tc)	690 mOhm @ 2.85A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDS6294	Fairchild/ON Semiconductor	MOSFET N-CH 30V 13A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,840,860	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	3V @ 250µA	14nC @ 5V	1205pF @ 15V	±20V	-	3W (Ta)	11.3 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMC6679AZ	Fairchild/ON Semiconductor	MOSFET P-CH 30V POWER33 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3970pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock225,768	MOSFET (Metal Oxide)	30V	11.5A (Ta), 20A (Tc)	4.5V, 10V	3V @ 250µA	91nC @ 10V	3970pF @ 15V	±25V	-	2.3W (Ta), 41W (Tc)	10 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FDS6375	Fairchild/ON Semiconductor	MOSFET P-CH 20V 8A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2694pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 8A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock987,192	MOSFET (Metal Oxide)	20V	8A (Ta)	2.5V, 4.5V	1.5V @ 250µA	36nC @ 4.5V	2694pF @ 10V	±8V	-	2.5W (Ta)	24 mOhm @ 8A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS5351	Fairchild/ON Semiconductor	MOSFET N-CH 60V 6.1A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock243,648	MOSFET (Metal Oxide)	60V	6.1A (Ta)	4.5V, 10V	3V @ 250µA	27nC @ 10V	1310pF @ 30V	±20V	-	5W (Ta)	35 mOhm @ 6.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS6679AZ	Fairchild/ON Semiconductor	MOSFET P-CH 30V 13A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3845pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock356,964	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	3V @ 250µA	96nC @ 10V	3845pF @ 15V	±25V	-	2.5W (Ta)	9.3 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDC5612	Fairchild/ON Semiconductor	MOSFET N-CH 60V 4.3A SSOT-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock364,452	MOSFET (Metal Oxide)	60V	4.3A (Ta)	6V, 10V	4V @ 250µA	18nC @ 10V	650pF @ 25V	±20V	-	1.6W (Ta)	55 mOhm @ 4.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FDS6675BZ	Fairchild/ON Semiconductor	MOSFET P-CH 30V 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2470pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock307,356	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	3V @ 250µA	62nC @ 10V	2470pF @ 15V	±25V	-	2.5W (Ta)	13 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)