Page 35 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FDB0300N1007L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 200A D2PAK

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock5,744
FDBL0630N150
Fairchild/ON Semiconductor

MOSFET N-CH 150V 169A H-PSOF8

Package: 8-PowerSFN

Stock2,288
FCH165N60E
Fairchild/ON Semiconductor

MOSFET N-CH 600V 23A TO247

Package: TO-247-3

Stock103,464
FCP125N60E
Fairchild/ON Semiconductor

MOSFET N-CH 600V 29A TO220

Package: TO-220-3

Stock15,624
FCP290N80
Fairchild/ON Semiconductor

MOSFET N-CH 800V 17A TO220

Package: TO-220-3

Stock19,164
FCP104N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 37A TO-220

Package: TO-220-3

Stock14,304
FDBL0150N60
Fairchild/ON Semiconductor

MOSFET N-CH 60V 300A

Package: 8-PowerSFN

Stock4,928
FCH150N65F_F155
Fairchild/ON Semiconductor

MOSFET N-CH 650V 24A

Package: TO-247-3

Stock9,084
FQA90N15_F109
Fairchild/ON Semiconductor

MOSFET N-CH 150V 90A TO-3P

Package: TO-3P-3, SC-65-3

Stock6,444
FCPF220N80
Fairchild/ON Semiconductor

MOSFET N-CH 800V 23A TO220

Package: TO-220-3 Full Pack

Stock7,692
FDB0105N407L
Fairchild/ON Semiconductor

MOSFET N-CH 40V 460A

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock2,176
FCB20N60F_F085
Fairchild/ON Semiconductor

MOSFET N CH 600V 20A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,128
FDB0190N807L
Fairchild/ON Semiconductor

MOSFET N-CH 80V 270A D2PAK

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock7,152
FQA65N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 65A TO-3P

Package: TO-3P-3, SC-65-3

Stock9,648
FQA140N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 140A TO-3P

Package: TO-3P-3, SC-65-3

Stock111,420
FDB8030L
Fairchild/ON Semiconductor

MOSFET N-CH 30V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock16,512
FDPF17N60NT
Fairchild/ON Semiconductor

MOSFET N-CH 600V TO-220F-3

Package: TO-220-3 Full Pack

Stock255,336
FDBL0260N100
Fairchild/ON Semiconductor

MOSFET N-CH 100V 200A POWER56

Package: 8-PowerSFN

Stock3,392
FDMT80080DC
Fairchild/ON Semiconductor

MOSFET N-CH 80V

Package: 8-PowerVDFN

Stock5,280
FDBL0065N40
Fairchild/ON Semiconductor

MOSFET N-CH 40V 300A H-PSOF8

Package: 8-PowerSFN

Stock7,648

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDB0300N1007L	Fairchild/ON Semiconductor	MOSFET N-CH 100V 200A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8295pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock5,744	MOSFET (Metal Oxide)	100V	200A (Tc)	6V, 10V	4V @ 250µA	113nC @ 10V	8295pF @ 50V	±20V	-	3.8W (Ta), 250W (Tc)	3 mOhm @ 26A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
FDBL0630N150	Fairchild/ON Semiconductor	MOSFET N-CH 150V 169A H-PSOF8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 169A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5805pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tj) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOF Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock2,288	MOSFET (Metal Oxide)	150V	169A (Tc)	10V	4V @ 250µA	90nC @ 10V	5805pF @ 75V	±20V	-	500W (Tj)	6.3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PSOF	8-PowerSFN
FCH165N60E	Fairchild/ON Semiconductor	MOSFET N-CH 600V 23A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2434pF @ 380V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	600V	23A (Tc)	10V	3.5V @ 250µA	75nC @ 10V	2434pF @ 380V	±20V	-	227W (Tc)	165 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FCP125N60E	Fairchild/ON Semiconductor	MOSFET N-CH 600V 29A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2990pF @ 380V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock15,624	MOSFET (Metal Oxide)	600V	29A (Tc)	10V	3.5V @ 250µA	95nC @ 10V	2990pF @ 380V	±20V	-	278W (Tc)	125 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
FCP290N80	Fairchild/ON Semiconductor	MOSFET N-CH 800V 17A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.7mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3205pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 212W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock19,164	MOSFET (Metal Oxide)	800V	17A (Tc)	10V	4.5V @ 1.7mA	75nC @ 10V	3205pF @ 100V	±20V	-	212W (Tc)	290 mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
FCP104N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 37A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4165pF @ 380V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 104 mOhm @ 18.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock14,304	MOSFET (Metal Oxide)	600V	37A (Tc)	10V	3.5V @ 250µA	82nC @ 10V	4165pF @ 380V	±20V	-	357W (Tc)	104 mOhm @ 18.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDBL0150N60	Fairchild/ON Semiconductor	MOSFET N-CH 60V 300A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 169nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tj) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOF Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock4,928	MOSFET (Metal Oxide)	60V	240A (Tc)	10V	4V @ 250µA	169nC @ 10V	10300pF @ 30V	±20V	-	357W (Tj)	1.5 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PSOF	8-PowerSFN
FCH150N65F_F155	Fairchild/ON Semiconductor	MOSFET N-CH 650V 24A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.4mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3737pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: TO-247-3	Stock9,084	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	5V @ 2.4mA	94nC @ 10V	3737pF @ 100V	±20V	-	298W (Tc)	150 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
FQA90N15_F109	Fairchild/ON Semiconductor	MOSFET N-CH 150V 90A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock6,444	MOSFET (Metal Oxide)	150V	90A (Tc)	10V	4V @ 250µA	285nC @ 10V	8700pF @ 25V	±25V	-	375W (Tc)	18 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FCPF220N80	Fairchild/ON Semiconductor	MOSFET N-CH 800V 23A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 2.3mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,692	MOSFET (Metal Oxide)	800V	23A (Tc)	10V	4.5V @ 2.3mA	105nC @ 10V	4560pF @ 100V	±20V	-	44W (Tc)	220 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDB0105N407L	Fairchild/ON Semiconductor	MOSFET N-CH 40V 460A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 460A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 291nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23100pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 0.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock2,176	MOSFET (Metal Oxide)	40V	460A (Tc)	6V, 10V	4V @ 250µA	291nC @ 10V	23100pF @ 20V	±20V	-	3.8W (Ta), 300W (Tc)	0.8 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab)
FCB20N60F_F085	Fairchild/ON Semiconductor	MOSFET N CH 600V 20A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2035pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 405W (Tc) Rds On (Max) @ Id, Vgs: 195 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,128	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	102nC @ 10V	2035pF @ 25V	±30V	-	405W (Tc)	195 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB0190N807L	Fairchild/ON Semiconductor	MOSFET N-CH 80V 270A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 249nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19110pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock7,152	MOSFET (Metal Oxide)	80V	270A (Tc)	8V, 10V	4V @ 250µA	249nC @ 10V	19110pF @ 40V	±20V	-	3.8W (Ta), 250W (Tc)	1.7 mOhm @ 34A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
FQA65N20	Fairchild/ON Semiconductor	MOSFET N-CH 200V 65A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 32.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock9,648	MOSFET (Metal Oxide)	200V	65A (Tc)	10V	5V @ 250µA	200nC @ 10V	7900pF @ 25V	±30V	-	310W (Tc)	32 mOhm @ 32.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FQA140N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 140A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock111,420	MOSFET (Metal Oxide)	100V	140A (Tc)	10V	4V @ 250µA	285nC @ 10V	7900pF @ 25V	±25V	-	375W (Tc)	10 mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FDB8030L	Fairchild/ON Semiconductor	MOSFET N-CH 30V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 187W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock16,512	MOSFET (Metal Oxide)	30V	80A (Ta)	4.5V, 10V	2V @ 250µA	170nC @ 5V	10500pF @ 15V	±20V	-	187W (Tc)	3.5 mOhm @ 80A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDPF17N60NT	Fairchild/ON Semiconductor	MOSFET N-CH 600V TO-220F-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3040pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock255,336	MOSFET (Metal Oxide)	600V	17A (Tc)	10V	5V @ 250µA	65nC @ 10V	3040pF @ 25V	±30V	-	62.5W (Tc)	340 mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDBL0260N100	Fairchild/ON Semiconductor	MOSFET N-CH 100V 200A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9265pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOF Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock3,392	MOSFET (Metal Oxide)	100V	200A (Tc)	10V	4V @ 250µA	116nC @ 10V	9265pF @ 50V	±20V	-	3.5W (Ta), 250W (Tc)	2.6 mOhm @ 80A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PSOF	8-PowerSFN
FDMT80080DC	Fairchild/ON Semiconductor	MOSFET N-CH 80V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 254A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20720pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 1.35 mOhm @ 36A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-Dual Cool?88 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,280	MOSFET (Metal Oxide)	80V	36A (Ta), 254A (Tc)	8V, 10V	4V @ 250µA	273nC @ 10V	20720pF @ 40V	±20V	-	3.2W (Ta), 156W (Tc)	1.35 mOhm @ 36A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-Dual Cool?88	8-PowerVDFN
FDBL0065N40	Fairchild/ON Semiconductor	MOSFET N-CH 40V 300A H-PSOF8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 296nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 429W (Tj) Rds On (Max) @ Id, Vgs: 0.65 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOF Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock7,648	MOSFET (Metal Oxide)	40V	300A (Tc)	10V	4V @ 250µA	296nC @ 10V	15900pF @ 25V	±20V	-	429W (Tj)	0.65 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PSOF	8-PowerSFN
FCP150N65F	Fairchild/ON Semiconductor	MOSFET N-CH 650V 24A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.4mA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3737pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,560	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	5V @ 2.4mA	93nC @ 10V	3737pF @ 100V	±20V	-	298W (Tc)	150 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FCH170N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 22A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2860pF @ 380V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock103,704	MOSFET (Metal Oxide)	600V	22A (Tc)	10V	3.5V @ 250µA	55nC @ 10V	2860pF @ 380V	±20V	-	227W (Tc)	170 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FDBL0150N80	Fairchild/ON Semiconductor	MOSFET N-CH 80V 300A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 188nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 429W (Tj) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOF Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock6,672	MOSFET (Metal Oxide)	80V	300A (Tc)	10V	4V @ 250µA	188nC @ 10V	12800pF @ 25V	±20V	-	429W (Tj)	1.4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PSOF	8-PowerSFN
FDBL0110N60	Fairchild/ON Semiconductor	MOSFET N-CH 60V 300A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13650pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 429W (Tj) Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOF Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock3,936	MOSFET (Metal Oxide)	60V	300A (Tc)	10V	4V @ 250µA	220nC @ 10V	13650pF @ 30V	±20V	-	429W (Tj)	1.1 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PSOF	8-PowerSFN
FDB082N15A	Fairchild/ON Semiconductor	MOSFET N-CH 150V 117A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 117A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,568	MOSFET (Metal Oxide)	150V	117A (Tc)	10V	4V @ 250µA	84nC @ 10V	6040pF @ 25V	±20V	-	294W (Tc)	8.2 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCP16N60N	Fairchild/ON Semiconductor	MOSFET N-CH 600V 16A TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 134.4W (Tc) Rds On (Max) @ Id, Vgs: 199 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock218,460	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	4V @ 250µA	52.3nC @ 10V	2170pF @ 100V	±30V	-	134.4W (Tc)	199 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDB0250N807L	Fairchild/ON Semiconductor	MOSFET N-CH 80V 240A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15400pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock6,912	MOSFET (Metal Oxide)	80V	240A (Tc)	8V, 10V	4V @ 250µA	200nC @ 10V	15400pF @ 40V	±20V	-	3.8W (Ta), 214W (Tc)	2.2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
FCH190N65F_F085	Fairchild/ON Semiconductor	MOSFET N-CH 650V 20.6A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3181pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 27A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock8,856	MOSFET (Metal Oxide)	650V	20.6A (Tc)	10V	5V @ 250µA	82nC @ 10V	3181pF @ 25V	±20V	-	208W (Tc)	190 mOhm @ 27A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3