Page 66 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FQPF5N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.5A TO-220F

Package: TO-220-3 Full Pack

Stock17,112
FQP3N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 2.8A TO-220

Package: TO-220-3

Stock162,864
FQPF7P06
Fairchild/ON Semiconductor

MOSFET P-CH 60V 5.3A TO-220F

Package: TO-220-3 Full Pack

Stock36,000
FQPF5N15
Fairchild/ON Semiconductor

MOSFET N-CH 150V 4.2A TO-220F

Package: TO-220-3 Full Pack

Stock4,624
FQU7N10LTU
Fairchild/ON Semiconductor

MOSFET N-CH 100V 5.8A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,832
FQPF5N20L
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.5A TO-220F

Package: TO-220-3 Full Pack

Stock2,688
FQPF7N10L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 5.5A TO-220F

Package: TO-220-3 Full Pack

Stock7,424
SSN1N45BBU
Fairchild/ON Semiconductor

MOSFET N-CH 450V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock4,272
SSM1N45BTF
Fairchild/ON Semiconductor

MOSFET N-CH 450V 500MA SOT-223

Package: TO-261-4, TO-261AA

Stock7,456
FQU4N20TU
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,840
FQE10N20CTU
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4A TO-126

Package: TO-225AA, TO-126-3

Stock2,208
FQE10N20LCTU
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4A TO-126

Package: TO-225AA, TO-126-3

Stock6,112
IRLM110ATF
Fairchild/ON Semiconductor

MOSFET N-CH 100V 1.5A SOT-223

Package: TO-261-4, TO-261AA

Stock5,664
IRLM210ATF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 770MA SOT-223

Package: TO-261-4, TO-261AA

Stock6,312
NDC631N
Fairchild/ON Semiconductor

MOSFET N-CH 20V 4.1A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock2,107,392
FQT4N20TF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 0.85A SOT-223

Package: TO-261-4, TO-261AA

Stock122,400
FQNL2N50BBU
Fairchild/ON Semiconductor

MOSFET N-CH 500V 0.35A TO-92L

Package: TO-226-3, TO-92-3 Long Body

Stock7,936
FQNL1N50BTA
Fairchild/ON Semiconductor

MOSFET N-CH 500V 0.27A TO-92L

Package: TO-226-3, TO-92-3 Long Body

Stock4,160
FQNL1N50BBU
Fairchild/ON Semiconductor

MOSFET N-CH 500V 0.27A TO-92L

Package: TO-226-3, TO-92-3 Long Body

Stock4,064
SI3442DV
Fairchild/ON Semiconductor

MOSFET N-CH 20V 4.1A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock826,884

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FQPF5N20	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock17,112	MOSFET (Metal Oxide)	200V	3.5A (Tc)	10V	5V @ 250µA	7.5nC @ 10V	270pF @ 25V	±30V	-	32W (Tc)	1.2 Ohm @ 1.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQP3N25	Fairchild/ON Semiconductor	MOSFET N-CH 250V 2.8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock162,864	MOSFET (Metal Oxide)	250V	2.8A (Tc)	10V	5V @ 250µA	5.2nC @ 10V	170pF @ 25V	±30V	-	45W (Tc)	2.2 Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQPF7P06	Fairchild/ON Semiconductor	MOSFET P-CH 60V 5.3A TO-220F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 24W (Tc) Rds On (Max) @ Id, Vgs: 410 mOhm @ 2.65A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock36,000	MOSFET (Metal Oxide)	60V	5.3A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	295pF @ 25V	±25V	-	24W (Tc)	410 mOhm @ 2.65A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQPF5N15	Fairchild/ON Semiconductor	MOSFET N-CH 150V 4.2A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,624	MOSFET (Metal Oxide)	150V	4.2A (Tc)	10V	4V @ 250µA	7nC @ 10V	230pF @ 25V	±25V	-	32W (Tc)	800 mOhm @ 2.1A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQU7N10LTU	Fairchild/ON Semiconductor	MOSFET N-CH 100V 5.8A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,832	MOSFET (Metal Oxide)	100V	5.8A (Tc)	5V, 10V	2V @ 250µA	6nC @ 5V	290pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	350 mOhm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FQPF5N20L	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,688	MOSFET (Metal Oxide)	200V	3.5A (Tc)	5V, 10V	2V @ 250µA	6.2nC @ 5V	325pF @ 25V	±20V	-	32W (Tc)	1.2 Ohm @ 1.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQPF7N10L	Fairchild/ON Semiconductor	MOSFET N-CH 100V 5.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 23W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,424	MOSFET (Metal Oxide)	100V	5.5A (Tc)	5V, 10V	2V @ 250µA	6nC @ 5V	290pF @ 25V	±20V	-	23W (Tc)	350 mOhm @ 2.75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
SSN1N45BBU	Fairchild/ON Semiconductor	MOSFET N-CH 450V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±50V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 4.25 Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock4,272	MOSFET (Metal Oxide)	450V	500mA (Tc)	10V	3.7V @ 250µA	8.5nC @ 10V	240pF @ 25V	±50V	-	900mW (Ta)	4.25 Ohm @ 250mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
SSM1N45BTF	Fairchild/ON Semiconductor	MOSFET N-CH 450V 500MA SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±50V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 4.25 Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock7,456	MOSFET (Metal Oxide)	450V	500mA (Tc)	10V	3.7V @ 250µA	8.5nC @ 10V	240pF @ 25V	±50V	-	900mW (Ta)	4.25 Ohm @ 250mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FQU4N20TU	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,840	MOSFET (Metal Oxide)	200V	3A (Tc)	5V, 10V	5V @ 250µA	6.5nC @ 10V	220pF @ 25V	±20V	-	2.5W (Ta), 30W (Tc)	1.4 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FQE10N20CTU	Fairchild/ON Semiconductor	MOSFET N-CH 200V 4A TO-126 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 12.8W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-126 Package / Case: TO-225AA, TO-126-3	Package: TO-225AA, TO-126-3	Stock2,208	MOSFET (Metal Oxide)	200V	4A (Tc)	10V	4V @ 250µA	26nC @ 10V	510pF @ 25V	±30V	-	12.8W (Tc)	360 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-126	TO-225AA, TO-126-3
FQE10N20LCTU	Fairchild/ON Semiconductor	MOSFET N-CH 200V 4A TO-126 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 12.8W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-126 Package / Case: TO-225AA, TO-126-3	Package: TO-225AA, TO-126-3	Stock6,112	MOSFET (Metal Oxide)	200V	4A (Tc)	5V, 10V	2V @ 250µA	19nC @ 5V	490pF @ 25V	±20V	-	12.8W (Tc)	360 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-126	TO-225AA, TO-126-3
IRLM110ATF	Fairchild/ON Semiconductor	MOSFET N-CH 100V 1.5A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Tc) Rds On (Max) @ Id, Vgs: 440 mOhm @ 750mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock5,664	MOSFET (Metal Oxide)	100V	1.5A (Tc)	5V	2V @ 250µA	8nC @ 5V	235pF @ 25V	±20V	-	2.2W (Tc)	440 mOhm @ 750mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
IRLM210ATF	Fairchild/ON Semiconductor	MOSFET N-CH 200V 770MA SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 770mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 390mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock6,312	MOSFET (Metal Oxide)	200V	770mA (Ta)	5V	2V @ 250µA	9nC @ 5V	240pF @ 25V	±20V	-	1.8W (Tc)	1.5 Ohm @ 390mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
NDC631N	Fairchild/ON Semiconductor	MOSFET N-CH 20V 4.1A SSOT-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Vgs (Max): 8V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock2,107,392	MOSFET (Metal Oxide)	20V	4.1A (Ta)	2.7V, 4.5V	1V @ 250µA	14nC @ 4.5V	365pF @ 10V	8V	-	1.6W (Ta)	60 mOhm @ 4.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FQT4N20TF	Fairchild/ON Semiconductor	MOSFET N-CH 200V 0.85A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 850mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.2W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 425mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock122,400	MOSFET (Metal Oxide)	200V	850mA (Tc)	10V	5V @ 250µA	6.5nC @ 10V	220pF @ 25V	±30V	-	2.2W (Tc)	1.4 Ohm @ 425mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FQNL2N50BBU	Fairchild/ON Semiconductor	MOSFET N-CH 500V 0.35A TO-92L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 350mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 175mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92L Package / Case: TO-226-3, TO-92-3 Long Body	Package: TO-226-3, TO-92-3 Long Body	Stock7,936	MOSFET (Metal Oxide)	500V	350mA (Tc)	10V	3.7V @ 250µA	8nC @ 10V	230pF @ 25V	±30V	-	1.5W (Tc)	5.3 Ohm @ 175mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92L	TO-226-3, TO-92-3 Long Body
FQNL1N50BTA	Fairchild/ON Semiconductor	MOSFET N-CH 500V 0.27A TO-92L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 270mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 9 Ohm @ 135mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92L Package / Case: TO-226-3, TO-92-3 Long Body	Package: TO-226-3, TO-92-3 Long Body	Stock4,160	MOSFET (Metal Oxide)	500V	270mA (Tc)	10V	3.7V @ 250µA	5.5nC @ 10V	150pF @ 25V	±30V	-	1.5W (Tc)	9 Ohm @ 135mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92L	TO-226-3, TO-92-3 Long Body
FQNL1N50BBU	Fairchild/ON Semiconductor	MOSFET N-CH 500V 0.27A TO-92L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 270mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 9 Ohm @ 135mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92L Package / Case: TO-226-3, TO-92-3 Long Body	Package: TO-226-3, TO-92-3 Long Body	Stock4,064	MOSFET (Metal Oxide)	500V	270mA (Tc)	10V	3.7V @ 250µA	5.5nC @ 10V	150pF @ 25V	±30V	-	1.5W (Tc)	9 Ohm @ 135mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92L	TO-226-3, TO-92-3 Long Body
SI3442DV	Fairchild/ON Semiconductor	MOSFET N-CH 20V 4.1A SSOT-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Vgs (Max): 8V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock826,884	MOSFET (Metal Oxide)	20V	4.1A (Ta)	2.7V, 4.5V	1V @ 250µA	14nC @ 4.5V	365pF @ 10V	8V	-	1.6W (Ta)	60 mOhm @ 4.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
IRFNL210BTA_FP001	Fairchild/ON Semiconductor	MOSFET N-CH 200V 1A TO-92L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92L Package / Case: TO-226-3, TO-92-3 Long Body	Package: TO-226-3, TO-92-3 Long Body	Stock6,464	MOSFET (Metal Oxide)	200V	1A (Tc)	10V	4V @ 250µA	9.3nC @ 10V	225pF @ 25V	±30V	-	3.1W (Ta)	1.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92L	TO-226-3, TO-92-3 Long Body
FDV304P_D87Z	Fairchild/ON Semiconductor	MOSFET P-CH 25V 0.46A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V Vgs (Max): -8V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,320	MOSFET (Metal Oxide)	25V	460mA (Ta)	2.7V, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	63pF @ 10V	-8V	-	350mW (Ta)	1.1 Ohm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
FDV302P_D87Z	Fairchild/ON Semiconductor	MOSFET P-CH 25V 0.12A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V Vgs (Max): -8V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,568	MOSFET (Metal Oxide)	25V	120mA (Ta)	2.7V, 4.5V	1.5V @ 250µA	0.31nC @ 4.5V	11pF @ 10V	-8V	-	350mW (Ta)	10 Ohm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
FDV301N_D87Z	Fairchild/ON Semiconductor	MOSFET N-CH 25V 0.22A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.06V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Vgs (Max): 8V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,560	MOSFET (Metal Oxide)	25V	220mA (Ta)	2.7V, 4.5V	1.06V @ 250µA	0.7nC @ 4.5V	9.5pF @ 10V	8V	-	350mW (Ta)	4 Ohm @ 400mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
FDMS8690	Fairchild/ON Semiconductor	MOSFET N-CH 30V 14A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 37.8W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock487,404	MOSFET (Metal Oxide)	30V	14A (Ta), 27A (Tc)	4.5V, 10V	3V @ 250µA	27nC @ 10V	1680pF @ 15V	±20V	-	2.5W (Ta), 37.8W (Tc)	9 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerWDFN
FQPF18N50V2	Fairchild/ON Semiconductor	MOSFET N-CH 500V 18A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 265 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,384	MOSFET (Metal Oxide)	500V	18A (Tc)	10V	5V @ 250µA	55nC @ 10V	3290pF @ 25V	±30V	-	69W (Tc)	265 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FCPF7N60T	Fairchild/ON Semiconductor	MOSFET N-CH 600V 7A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,968	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	5V @ 250µA	30nC @ 10V	920pF @ 25V	±30V	-	31W (Tc)	600 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDS4780	Fairchild/ON Semiconductor	MOSFET N-CH 40V 10.8A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1686pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,312	MOSFET (Metal Oxide)	40V	10.8A (Ta)	10V	5V @ 250µA	40nC @ 10V	1686pF @ 20V	±20V	-	2.5W (Ta)	10.5 mOhm @ 10.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)