Page 83 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

HUF76429D3S
Fairchild/ON Semiconductor

MOSFET N-CH 60V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,984
HUF75925D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 200V 11A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock445,692
HUF76423D3
Fairchild/ON Semiconductor

MOSFET N-CH 60V 20A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock848,400
FQP6N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 5.5A TO-220

Package: TO-220-3

Stock39,084
FQB6N50TM
Fairchild/ON Semiconductor

MOSFET N-CH 500V 5.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock80,940
FQP3N80
Fairchild/ON Semiconductor

MOSFET N-CH 800V 3A TO-220

Package: TO-220-3

Stock54,888
FDZ7064AS
Fairchild/ON Semiconductor

MOSFET N-CH 30V 13.5A BGA

Package: 30-WFBGA

Stock4,528
FQD16N15TM
Fairchild/ON Semiconductor

MOSFET N-CH 150V 11.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,616
FQD16N15TF
Fairchild/ON Semiconductor

MOSFET N-CH 150V 11.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,376
FQPF6N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 3.6A TO-220F

Package: TO-220-3 Full Pack

Stock7,072
FQP33N10L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 33A TO-220

Package: TO-220-3

Stock16,248
FQP4N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 4.4A TO-220

Package: TO-220-3

Stock103,464
FQPF9N50C
Fairchild/ON Semiconductor

MOSFET N-CH 500V 9A TO-220F

Package: TO-220-3 Full Pack

Stock53,868
HUF75229P3
Fairchild/ON Semiconductor

MOSFET N-CH 50V 44A TO-220AB

Package: TO-220-3

Stock102,132
FQP9N50C
Fairchild/ON Semiconductor

MOSFET N-CH 500V 9A TO-220

Package: TO-220-3

Stock27,888
HUF75329P3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 49A TO-220AB

Package: TO-220-3

Stock120,192
HUFA75321P3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 35A TO-220AB

Package: TO-220-3

Stock6,208
FQB2NA90TM
Fairchild/ON Semiconductor

MOSFET N-CH 900V 2.8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,576
FQB2N80TM
Fairchild/ON Semiconductor

MOSFET N-CH 800V 2.4A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,328
NDH832P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 4.2A SSOT-8

Package: 8-SMD, Gull Wing

Stock15,960

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
HUF76429D3S	Fairchild/ON Semiconductor	MOSFET N-CH 60V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,984	MOSFET (Metal Oxide)	60V	20A (Tc)	4.5V, 10V	3V @ 250µA	46nC @ 10V	1480pF @ 25V	±16V	-	110W (Tc)	23 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
HUF75925D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 200V 11A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 275 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock445,692	MOSFET (Metal Oxide)	200V	11A (Tc)	10V	4V @ 250µA	78nC @ 20V	1030pF @ 25V	±20V	-	100W (Tc)	275 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
HUF76423D3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 20A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock848,400	MOSFET (Metal Oxide)	60V	20A (Tc)	4.5V, 10V	3V @ 250µA	34nC @ 10V	1060pF @ 25V	±16V	-	85W (Tc)	32 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
FQP6N50	Fairchild/ON Semiconductor	MOSFET N-CH 500V 5.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 98W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock39,084	MOSFET (Metal Oxide)	500V	5.5A (Tc)	10V	5V @ 250µA	22nC @ 10V	790pF @ 25V	±30V	-	98W (Tc)	1.3 Ohm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQB6N50TM	Fairchild/ON Semiconductor	MOSFET N-CH 500V 5.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock80,940	MOSFET (Metal Oxide)	500V	5.5A (Tc)	10V	5V @ 250µA	22nC @ 10V	790pF @ 25V	±30V	-	3.13W (Ta), 130W (Tc)	1.3 Ohm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQP3N80	Fairchild/ON Semiconductor	MOSFET N-CH 800V 3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock54,888	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	5V @ 250µA	19nC @ 10V	690pF @ 25V	±30V	-	107W (Tc)	5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDZ7064AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V 13.5A BGA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 30-BGA (4x3.5) Package / Case: 30-WFBGA	Package: 30-WFBGA	Stock4,528	MOSFET (Metal Oxide)	30V	13.5A (Ta)	4.5V, 10V	3V @ 1mA	51nC @ 10V	1960pF @ 15V	±20V	-	2.2W (Ta)	5.6 mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	30-BGA (4x3.5)	30-WFBGA
FQD16N15TM	Fairchild/ON Semiconductor	MOSFET N-CH 150V 11.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 5.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,616	MOSFET (Metal Oxide)	150V	11.8A (Tc)	10V	4V @ 250µA	30nC @ 10V	910pF @ 25V	±25V	-	2.5W (Ta), 55W (Tc)	160 mOhm @ 5.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD16N15TF	Fairchild/ON Semiconductor	MOSFET N-CH 150V 11.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 5.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,376	MOSFET (Metal Oxide)	150V	11.8A (Tc)	10V	4V @ 250µA	30nC @ 10V	910pF @ 25V	±25V	-	2.5W (Ta), 55W (Tc)	160 mOhm @ 5.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQPF6N50	Fairchild/ON Semiconductor	MOSFET N-CH 500V 3.6A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,072	MOSFET (Metal Oxide)	500V	3.6A (Tc)	10V	5V @ 250µA	22nC @ 10V	790pF @ 25V	±30V	-	42W (Tc)	1.3 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQP33N10L	Fairchild/ON Semiconductor	MOSFET N-CH 100V 33A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 127W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock16,248	MOSFET (Metal Oxide)	100V	33A (Tc)	5V, 10V	2V @ 250µA	40nC @ 5V	1630pF @ 25V	±20V	-	127W (Tc)	52 mOhm @ 16.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQP4N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 4.4A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	600V	4.4A (Tc)	10V	5V @ 250µA	20nC @ 10V	670pF @ 25V	±30V	-	106W (Tc)	2.2 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQPF9N50C	Fairchild/ON Semiconductor	MOSFET N-CH 500V 9A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock53,868	MOSFET (Metal Oxide)	500V	9A (Tc)	10V	4V @ 250µA	35nC @ 10V	1030pF @ 25V	±30V	-	44W (Tc)	800 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
HUF75229P3	Fairchild/ON Semiconductor	MOSFET N-CH 50V 44A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock102,132	MOSFET (Metal Oxide)	50V	44A (Tc)	10V	4V @ 250µA	75nC @ 20V	1060pF @ 25V	±20V	-	90W (Tc)	22 mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQP9N50C	Fairchild/ON Semiconductor	MOSFET N-CH 500V 9A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock27,888	MOSFET (Metal Oxide)	500V	9A (Tc)	10V	4V @ 250µA	35nC @ 10V	1030pF @ 25V	±30V	-	135W (Tc)	800 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
HUF75329P3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 49A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 49A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock120,192	MOSFET (Metal Oxide)	55V	49A (Tc)	10V	4V @ 250µA	75nC @ 20V	1060pF @ 25V	±20V	-	128W (Tc)	24 mOhm @ 49A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
HUFA75321P3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 35A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,208	MOSFET (Metal Oxide)	55V	35A (Tc)	10V	4V @ 250µA	44nC @ 20V	680pF @ 25V	±20V	-	93W (Tc)	34 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQB2NA90TM	Fairchild/ON Semiconductor	MOSFET N-CH 900V 2.8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 5.8 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,576	MOSFET (Metal Oxide)	900V	2.8A (Tc)	10V	5V @ 250µA	20nC @ 10V	680pF @ 25V	±30V	-	3.13W (Ta), 107W (Tc)	5.8 Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB2N80TM	Fairchild/ON Semiconductor	MOSFET N-CH 800V 2.4A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 85W (Tc) Rds On (Max) @ Id, Vgs: 6.3 Ohm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,328	MOSFET (Metal Oxide)	800V	2.4A (Tc)	10V	5V @ 250µA	15nC @ 10V	550pF @ 25V	±30V	-	3.13W (Ta), 85W (Tc)	6.3 Ohm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NDH832P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 4.2A SSOT-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Vgs (Max): -8V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-8 Package / Case: 8-SMD, Gull Wing	Package: 8-SMD, Gull Wing	Stock15,960	MOSFET (Metal Oxide)	20V	4.2A (Ta)	2.7V, 4.5V	1V @ 250µA	30nC @ 4.5V	1000pF @ 10V	-8V	-	1.8W (Ta)	60 mOhm @ 4.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-8	8-SMD, Gull Wing
FQI50N06LTU	Fairchild/ON Semiconductor	MOSFET N-CH 60V 52.4A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 52.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 121W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 26.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,312	MOSFET (Metal Oxide)	60V	52.4A (Tc)	5V, 10V	2.5V @ 250µA	32nC @ 5V	1630pF @ 25V	±20V	-	3.75W (Ta), 121W (Tc)	21 mOhm @ 26.2A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
HUFA76423D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 60V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,624	MOSFET (Metal Oxide)	60V	20A (Tc)	4.5V, 10V	3V @ 250µA	34nC @ 10V	1060pF @ 25V	±16V	-	85W (Tc)	32 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FQB4P40TM	Fairchild/ON Semiconductor	MOSFET P-CH 400V 3.5A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 85W (Tc) Rds On (Max) @ Id, Vgs: 3.1 Ohm @ 1.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,688	MOSFET (Metal Oxide)	400V	3.5A (Tc)	10V	5V @ 250µA	23nC @ 10V	680pF @ 25V	±30V	-	3.13W (Ta), 85W (Tc)	3.1 Ohm @ 1.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQI4P40TU	Fairchild/ON Semiconductor	MOSFET P-CH 400V 3.5A I2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 85W (Tc) Rds On (Max) @ Id, Vgs: 3.1 Ohm @ 1.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,472	MOSFET (Metal Oxide)	400V	3.5A (Tc)	10V	5V @ 250µA	23nC @ 10V	680pF @ 25V	±30V	-	3.13W (Ta), 85W (Tc)	3.1 Ohm @ 1.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
FQI3N80TU	Fairchild/ON Semiconductor	MOSFET N-CH 800V 3A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,536	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	5V @ 250µA	19nC @ 10V	690pF @ 25V	±30V	-	3.13W (Ta), 107W (Tc)	5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
FQB3N80TM	Fairchild/ON Semiconductor	MOSFET N-CH 800V 3A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,652	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	5V @ 250µA	19nC @ 10V	690pF @ 25V	±30V	-	-	5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB2N60TM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 2.4A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 64W (Tc) Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock15,468	MOSFET (Metal Oxide)	600V	2.4A (Tc)	10V	5V @ 250µA	11nC @ 10V	350pF @ 25V	±30V	-	3.13W (Ta), 64W (Tc)	4.7 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA76419P3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 29A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,128	MOSFET (Metal Oxide)	60V	29A (Tc)	4.5V, 10V	3V @ 250µA	28nC @ 10V	900pF @ 25V	±16V	-	75W (Tc)	35 mOhm @ 29A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3