|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 400MA TO-92
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock84,438 |
|
MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 2.5V @ 250µA | - | 50pF @ 25V | ±20V | - | 625mW (Ta) | 2 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 500MA TO-92
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 830mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock563,184 |
|
MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 10V | 3V @ 1mA | - | 40pF @ 10V | ±20V | - | 830mW (Ta) | 5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 7.6A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 7.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock646,656 |
|
MOSFET (Metal Oxide) | 40V | 7.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 11nC @ 5V | 760pF @ 20V | ±20V | - | 2.5W (Ta) | 29 mOhm @ 7.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Fairchild/ON Semiconductor |
MOSFET P-CH 12V 6-MLP 2X2
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 6V
- Input Capacitance (Ciss) (Max) @ Vds: 3405pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MicroFET (2x2)
- Package / Case: 6-VDFN Exposed Pad
|
Package: 6-VDFN Exposed Pad |
Stock975,348 |
|
MOSFET (Metal Oxide) | 12V | 10A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 29nC @ 6V | 3405pF @ 6V | ±8V | - | 2.4W (Ta) | 16 mOhm @ 10A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 9A MICROFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MicroFET (2x2)
- Package / Case: 6-VDFN Exposed Pad
|
Package: 6-VDFN Exposed Pad |
Stock15,288 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta), 10A (Tc) | 4.5V, 10V | 3V @ 250µA | 12nC @ 10V | 720pF @ 15V | ±20V | - | 2.4W (Ta) | 16 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 6-MLP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MicroFET (2x2)
- Package / Case: 6-WDFN Exposed Pad
|
Package: 6-WDFN Exposed Pad |
Stock29,100 |
|
MOSFET (Metal Oxide) | 60V | 7.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 17nC @ 10V | 1235pF @ 30V | ±20V | - | 2.4W (Ta) | 23 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-WDFN Exposed Pad |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 10A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 49W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock62,604 |
|
MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4.5V, 10V | 3V @ 250µA | 16nC @ 10V | 425pF @ 25V | ±16V | - | 49W (Tc) | 160 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 0.2A TO-92
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock94,098 |
|
MOSFET (Metal Oxide) | 60V | 200mA (Tc) | 4.5V, 10V | 3V @ 1mA | - | 50pF @ 25V | ±20V | - | 400mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Fairchild/ON Semiconductor |
MOSFET P-CH 20V 9.4A MICROFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2805pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MicroFET (2x2)
- Package / Case: 6-VDFN Exposed Pad
|
Package: 6-VDFN Exposed Pad |
Stock114,144 |
|
MOSFET (Metal Oxide) | 20V | 9.4A (Ta) | 1.8V, 4.5V | 1.5V @ 250µA | 29nC @ 4.5V | 2805pF @ 10V | ±8V | - | 2.4W (Ta) | 20 mOhm @ 9.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 400V 4.5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock39,588 |
|
MOSFET (Metal Oxide) | 400V | 4.5A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 625pF @ 25V | ±30V | - | 2.5W (Ta), 48W (Tc) | 1 Ohm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 1.6A 3SSOT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 261 mOhm @ 1.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock421,296 |
|
MOSFET (Metal Oxide) | 150V | 1.6A (Ta) | 6V, 10V | 4V @ 250µA | 5nC @ 10V | 225pF @ 75V | ±20V | - | 1.5W (Ta) | 261 mOhm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 8A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
- Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock36,864 |
|
MOSFET (Metal Oxide) | 100V | 8A (Ta), 35A (Tc) | 4.5V, 10V | 3V @ 250µA | 26nC @ 10V | 1540pF @ 50V | ±20V | - | 3.1W (Ta), 54W (Tc) | 22.5 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 1.9A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 950mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock286,656 |
|
MOSFET (Metal Oxide) | 600V | 1.9A (Tc) | 10V | 4V @ 250µA | 12nC @ 10V | 235pF @ 25V | ±30V | - | 2.5W (Ta), 44W (Tc) | 4.7 Ohm @ 950mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 6-MLP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MicroFET (2x2)
- Package / Case: 6-WDFN Exposed Pad
|
Package: 6-WDFN Exposed Pad |
Stock43,242 |
|
MOSFET (Metal Oxide) | 40V | 10A (Tc) | 4.5V, 10V | 3V @ 250µA | 20nC @ 10V | 1260pF @ 20V | ±20V | - | 2.4W (Ta) | 14 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-WDFN Exposed Pad |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 4.8A 8-PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 16.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
- Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6), Power56
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock27,378 |
|
MOSFET (Metal Oxide) | 100V | 4.8A (Ta), 16.5A (Tc) | 6V, 10V | 4V @ 250µA | 7nC @ 10V | 400pF @ 50V | ±20V | - | 2.5W (Ta), 31W (Tc) | 56 mOhm @ 4.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6), Power56 | 8-PowerTDFN |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 600V DPAK-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock15,480 |
|
MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 5V @ 250µA | 13nC @ 10V | 600pF @ 25V | ±25V | - | 83W (Tc) | 2 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 9A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.47W (Ta)
- Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock15,612 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 29nC @ 10V | 1610pF @ 15V | ±20V | - | 1.47W (Ta) | 11.5 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Fairchild/ON Semiconductor |
MOSFET P-CH 60V 12A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
- Rds On (Max) @ Id, Vgs: 135 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock190,596 |
|
MOSFET (Metal Oxide) | 60V | 12A (Tc) | 10V | 4V @ 250µA | 27nC @ 10V | 900pF @ 25V | ±25V | - | 2.5W (Ta), 44W (Tc) | 135 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 15.6A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock20,832 |
|
MOSFET (Metal Oxide) | 100V | 15.6A (Tc) | 5V, 10V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | ±20V | - | 2.5W (Ta), 50W (Tc) | 100 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 13A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock532,356 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 3V @ 250µA | 30nC @ 5V | 2220pF @ 15V | ±20V | - | 2.5W (Ta) | 8 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Fairchild/ON Semiconductor |
MOSFET P-CH 12V 6.7A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 52W (Ta)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.7A, 4.5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock93,600 |
|
MOSFET (Metal Oxide) | 12V | 6.7A (Ta) | 1.8V, 4.5V | 1.5V @ 250µA | 21nC @ 4.5V | 1290pF @ 6V | ±8V | - | 52W (Ta) | 28 mOhm @ 6.7A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N CH 150V 18A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 56.8W (Tc)
- Rds On (Max) @ Id, Vgs: 77 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock60,192 |
|
MOSFET (Metal Oxide) | 150V | 18A (Tc) | 10V | 4V @ 250µA | 11nC @ 10V | 765pF @ 75V | ±20V | - | 56.8W (Tc) | 77 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 50V 14A TO-252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock96,192 |
|
MOSFET (Metal Oxide) | 50V | 14A (Tc) | 5V | 2V @ 250µA | 40nC @ 10V | 670pF @ 25V | ±10V | - | 48W (Tc) | 100 mOhm @ 14A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 50V 14A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock805,428 |
|
MOSFET (Metal Oxide) | 50V | 14A (Tc) | 10V | 4V @ 250µA | 40nC @ 20V | 570pF @ 25V | ±20V | - | 48W (Tc) | 100 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 400V 2A SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-4
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock409,608 |
|
MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 5V @ 250µA | 6nC @ 10V | 225pF @ 25V | ±30V | - | 2W (Tc) | 3.4 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 25V 35A TO-252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock496,980 |
|
MOSFET (Metal Oxide) | 25V | 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 29nC @ 10V | 1440pF @ 13V | ±20V | - | 50W (Tc) | 8.5 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 8.4A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 8.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,541,696 |
|
MOSFET (Metal Oxide) | 30V | 8.4A (Ta) | 4.5V, 10V | 3V @ 250µA | 7.6nC @ 5V | 560pF @ 15V | ±20V | - | 2.5W (Ta) | 22 mOhm @ 8.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N CH 100V 6.8A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.61nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 14.9W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 3.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock738,036 |
|
MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 5V, 10V | 2.8V @ 250µA | 3.61nC @ 10V | 225pF @ 50V | ±20V | - | 14.9W (Tc) | 160 mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
0
Login/Register
BOM
Cart
