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ISSI, Integrated Silicon Solution Inc |
16Mb,High-Speed,Async,1Mbx16, 12
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 16Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 1.65V ~ 2.2V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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SRAM | SRAM - Asynchronous | 16Mbit | Parallel | - | 12ns | 12 ns | 1.65V ~ 2.2V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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ISSI, Integrated Silicon Solution Inc |
Automotive (Tc: -40 to +105C), 8
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 8Gbit
- Memory Interface: Parallel
- Clock Frequency: 1.333 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 18 ns
- Voltage - Supply: 1.14V ~ 1.26V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (10x14)
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DRAM | SDRAM - DDR4 | 8Gbit | Parallel | 1.333 GHz | 15ns | 18 ns | 1.14V ~ 1.26V | -40°C ~ 105°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (10x14) |
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ISSI, Integrated Silicon Solution Inc |
RLDRAM3 Memory, 576Mbit, x18, Co
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: RLDRAM 3
- Memory Size: 576Mbit
- Memory Interface: Parallel
- Clock Frequency: 1.066 GHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5 ns
- Voltage - Supply: 1.28V ~ 1.42V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-LBGA
- Supplier Device Package: 168-FBGA (13.5x13.5)
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DRAM | RLDRAM 3 | 576Mbit | Parallel | 1.066 GHz | - | 7.5 ns | 1.28V ~ 1.42V | -40°C ~ 95°C (TC) | Surface Mount | 168-LBGA | 168-FBGA (13.5x13.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16GBIT PARALLEL 96LWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 16Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: 0°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-LFBGA
- Supplier Device Package: 96-LWBGA (10x14)
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Package: - |
Stock741 |
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DRAM | SDRAM - DDR3L | 16Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | 0°C ~ 85°C (TC) | Surface Mount | 96-LFBGA | 96-LWBGA (10x14) |
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ISSI, Integrated Silicon Solution Inc |
2G, 1.8V, DDR2, 256Mx8, 400Mhz @
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 2Gbit
- Memory Interface: Parallel
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400 ps
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10.5)
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DRAM | SDRAM - DDR2 | 2Gbit | Parallel | 400 MHz | 15ns | 400 ps | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128MBIT PAR 54TSOP II
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mbit
- Memory Interface: LVTTL
- Clock Frequency: 143 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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DRAM | SDRAM | 128Mbit | LVTTL | 143 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT HSUL 12 168VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 4Gbit
- Memory Interface: HSUL_12
- Clock Frequency: 533 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-VFBGA
- Supplier Device Package: 168-VFBGA (12x12)
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DRAM | SDRAM - Mobile LPDDR2-S4 | 4Gbit | HSUL_12 | 533 MHz | 15ns | 5.5 ns | 1.14V ~ 1.3V, 1.7V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 168-VFBGA | 168-VFBGA (12x12) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8MBIT PARALLEL 90TFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10 ns
- Voltage - Supply: 2.4V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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SRAM | SRAM - Asynchronous | 8Mbit | Parallel | - | 10ns | 10 ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC PSRAM 8MBIT SPI/QUAD 24TFBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 8Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 40ns
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA (6x8)
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Package: - |
Stock1,410 |
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PSRAM | PSRAM (Pseudo SRAM) | 8Mbit | SPI - Quad I/O | 200 MHz | 40ns | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256MBIT PAR 54TSOP II
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mbit
- Memory Interface: LVTTL
- Clock Frequency: 143 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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DRAM | SDRAM | 256Mbit | LVTTL | 143 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256MBIT PAR 54TSOP II
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mbit
- Memory Interface: LVTTL
- Clock Frequency: 143 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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DRAM | SDRAM | 256Mbit | LVTTL | 143 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1GBIT PARALLEL 400MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 1Gbit
- Memory Interface: Parallel
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14V ~ 1.95V
- Operating Temperature: 0°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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DRAM | SDRAM - Mobile LPDDR2-S4 | 1Gbit | Parallel | 400 MHz | 15ns | - | 1.14V ~ 1.95V | 0°C ~ 85°C (TC) | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 64MBIT PAR 86TSOP II
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mbit
- Memory Interface: LVTTL
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 86-TFSOP (0.400", 10.16mm Width)
- Supplier Device Package: 86-TSOP II
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DRAM | SDRAM | 64Mbit | LVTTL | 166 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
4G, 1.2V, DDR4, 512Mx8, 2400MT/s
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 4Gbit
- Memory Interface: POD
- Clock Frequency: 1.2 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 19 ns
- Voltage - Supply: 1.14V ~ 1.26V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (10x14)
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Package: - |
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DRAM | SDRAM - DDR4 | 4Gbit | POD | 1.2 GHz | 15ns | 19 ns | 1.14V ~ 1.26V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (10x14) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT PAR 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 4Gbit
- Memory Interface: Parallel
- Clock Frequency: 1.066 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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DRAM | SDRAM - DDR3 | 4Gbit | Parallel | 1.066 GHz | 15ns | 20 ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 64MBIT PAR 90TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mbit
- Memory Interface: LVTTL
- Clock Frequency: 143 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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DRAM | SDRAM | 64Mbit | LVTTL | 143 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1GBIT PARALLEL 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 1Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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DRAM | SDRAM - DDR3L | 1Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
1Mb, Low Power/Power Saver,Async
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45 ns
- Voltage - Supply: 2.2V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-TFBGA (6x8)
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SRAM | SRAM - Asynchronous | 1Mbit | Parallel | - | 45ns | 45 ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128MBIT PAR 54TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mbit
- Memory Interface: LVTTL
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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DRAM | SDRAM | 128Mbit | LVTTL | 166 MHz | - | 5.4 ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 576MBIT PAR 168FCBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: RLDRAM 3
- Memory Size: 576Mbit
- Memory Interface: Parallel
- Clock Frequency: 1.066 GHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5 ns
- Voltage - Supply: 1.28V ~ 1.42V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-LBGA
- Supplier Device Package: 168-FBGA (13.5x13.5)
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DRAM | RLDRAM 3 | 576Mbit | Parallel | 1.066 GHz | - | 7.5 ns | 1.28V ~ 1.42V | -40°C ~ 95°C (TC) | Surface Mount | 168-LBGA | 168-FBGA (13.5x13.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256MBIT PAR 54TSOP II
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mbit
- Memory Interface: LVTTL
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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DRAM | SDRAM | 256Mbit | LVTTL | 166 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1GBIT PAR 78TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 1Gbit
- Memory Interface: Parallel
- Clock Frequency: 667 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (8x10.5)
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DRAM | SDRAM - DDR3 | 1Gbit | Parallel | 667 MHz | 15ns | 20 ns | 1.425V ~ 1.575V | -40°C ~ 105°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
32Mb, 48pin TSOP,3V, RoHS, T&R,
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 32Mbit
- Memory Interface: CFI
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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FLASH | FLASH - NOR (SLC) | 32Mbit | CFI | - | 70ns | 70 ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2GBIT PAR 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 2Gbit
- Memory Interface: Parallel
- Clock Frequency: 1.066 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: - |
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DRAM | SDRAM - DDR3 | 2Gbit | Parallel | 1.066 GHz | 15ns | 20 ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
2G, 1.35V, DDR3L, 256Mx8, 1600MT
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 2Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (8x10.5)
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Package: - |
Request a Quote |
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DRAM | SDRAM - DDR3L | 2Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
2G, 1.2/1.8V, LPDDR2, 64Mx32, 40
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 2Gbit
- Memory Interface: HSUL_12
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-TFBGA
- Supplier Device Package: 134-TFBGA (10x11.5)
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DRAM | SDRAM - Mobile LPDDR2-S4 | 2Gbit | HSUL_12 | 400 MHz | 15ns | 5.5 ns | 1.14V ~ 1.3V, 1.7V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 134-TFBGA | 134-TFBGA (10x11.5) |
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ISSI, Integrated Silicon Solution Inc |
Automotive (Tc: -40 to +105C), 1
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 1Gbit
- Memory Interface: SSTL_15
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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DRAM | SDRAM - DDR3 | 1Gbit | SSTL_15 | 800 MHz | 15ns | 20 ns | 1.425V ~ 1.575V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |