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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 167MHZ 66TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP II
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock3,328 |
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DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 166MHZ 90BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile DDR
- Memory Size: 512Mb (16M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 12ns
- Access Time: 5.5ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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Package: 90-TFBGA |
Stock3,568 |
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DRAM | SDRAM - Mobile DDR | 512Mb (16M x 32) | Parallel | 166MHz | 12ns | 5.5ns | 1.7 V ~ 1.95 V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 2GBIT 667MHZ 96BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 667MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: 96-TFBGA |
Stock3,760 |
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DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.425 V ~ 1.575 V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4MBIT 12NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock6,420 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 12ns | 12ns | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4MBIT 70NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 2.5 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock2,704 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 70ns | 70ns | 2.5 V ~ 3.6 V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4MBIT 12NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock5,136 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 12ns | 12ns | 3.135 V ~ 3.6 V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 1GBIT 800MHZ 96BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 1Gb (64M x 16)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: 96-TFBGA |
Stock6,592 |
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DRAM | SDRAM - DDR3 | 1Gb (64M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.425 V ~ 1.575 V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 200MHZ 144BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (16M x 32)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.5 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 144-LFBGA
- Supplier Device Package: 144-LFBGA (12x12)
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Package: 144-LFBGA |
Stock5,680 |
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DRAM | SDRAM - DDR | 512Mb (16M x 32) | Parallel | 200MHz | 15ns | 700ps | 2.5 V ~ 2.7 V | 0°C ~ 70°C (TA) | Surface Mount | 144-LFBGA | 144-LFBGA (12x12) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 133MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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Package: 54-TFBGA |
Stock4,960 |
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DRAM | SDRAM - Mobile | 512Mb (32M x 16) | Parallel | 133MHz | - | 6ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 2GBIT 667MHZ 96BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 667MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: 96-TFBGA |
Stock7,968 |
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DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.425 V ~ 1.575 V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 167MHZ 60BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (8x13)
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Package: 60-TFBGA |
Stock3,664 |
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DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 167MHZ 60BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (8x13)
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Package: 60-TFBGA |
Stock4,048 |
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DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 3MBIT 8NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 3Mb (128K x 24)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 8ns
- Access Time: 8ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: 100-LQFP |
Stock4,784 |
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SRAM | SRAM - Asynchronous | 3Mb (128K x 24) | Parallel | - | 8ns | 8ns | 3.135 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 16MBIT 45NS 48TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 2.2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock3,744 |
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SRAM | SRAM - Asynchronous | 16Mb (1M x 16) | Parallel | - | 55ns | 55ns | 2.2 V ~ 3.6 V | -40°C ~ 125°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 16MBIT 45NS 48TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 2.2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock2,992 |
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SRAM | SRAM - Asynchronous | 16Mb (1M x 16) | Parallel | - | 45ns | 45ns | 2.2 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8MBIT 55NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mb (512K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP2
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock6,560 |
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SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 55ns | 55ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP2 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8MBIT 55NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mb (1M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP2
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock7,168 |
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SRAM | SRAM - Asynchronous | 8Mb (1M x 8) | Parallel | - | 55ns | 55ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP2 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 333MHZ 84BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 333MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 450ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 84-TFBGA
- Supplier Device Package: 84-TWBGA (8x12.5)
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Package: 84-TFBGA |
Stock7,856 |
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DRAM | SDRAM - DDR2 | 512Mb (32M x 16) | Parallel | 333MHz | 15ns | 450ps | 1.7 V ~ 1.9 V | -40°C ~ 105°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 2GBIT 667MHZ 78BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 2Gb (256M x 8)
- Memory Interface: Parallel
- Clock Frequency: 667MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.283 V ~ 1.45 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (8x10.5)
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Package: 78-TFBGA |
Stock5,920 |
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DRAM | SDRAM - DDR3L | 2Gb (256M x 8) | Parallel | 667MHz | 15ns | 20ns | 1.283 V ~ 1.45 V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 16MBIT 55NS 48BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 16Mb (2M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 2.2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-TFBGA (6x8)
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Package: 48-TFBGA |
Stock7,200 |
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SRAM | SRAM - Asynchronous | 16Mb (2M x 8) | Parallel | - | 55ns | 55ns | 2.2 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 16MBIT 55NS 48BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 2.2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-VFBGA
- Supplier Device Package: 48-VFBGA (6x8)
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Package: 48-VFBGA |
Stock7,024 |
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SRAM | SRAM - Asynchronous | 16Mb (1M x 16) | Parallel | - | 55ns | 55ns | 2.2 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-VFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 2GBIT 667MHZ 96BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 667MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.283 V ~ 1.45 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: 96-TFBGA |
Stock2,832 |
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DRAM | SDRAM - DDR3L | 2Gb (128M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.283 V ~ 1.45 V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 2GBIT 800MHZ 96BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
|
Package: 96-TFBGA |
Stock6,240 |
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DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.425 V ~ 1.575 V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 200MHZ 66TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.5 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP II
|
Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock4,032 |
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DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 2GBIT 800MHZ 96BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.283 V ~ 1.45 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
|
Package: 96-TFBGA |
Stock4,176 |
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DRAM | SDRAM - DDR3L | 2Gb (128M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.283 V ~ 1.45 V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 400MHZ 84BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 84-TFBGA
- Supplier Device Package: 84-TWBGA (8x12.5)
|
Package: 84-TFBGA |
Stock6,992 |
|
DRAM | SDRAM - DDR2 | 512Mb (32M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7 V ~ 1.9 V | -40°C ~ 105°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 143MHZ 90BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (32M x 8)
- Memory Interface: Parallel
- Clock Frequency: 143MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
|
Package: 90-TFBGA |
Stock7,440 |
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DRAM | SDRAM | 256Mb (32M x 8) | Parallel | 143MHz | - | 5.4ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 1GBIT 800MHZ 96BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 1Gb (64M x 16)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
|
Package: 96-TFBGA |
Stock3,216 |
|
DRAM | SDRAM - DDR3 | 1Gb (64M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.425 V ~ 1.575 V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |