|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 60NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 30ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock7,632 |
|
DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 30ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 60NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 30ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock6,672 |
|
DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 30ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 44TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
|
Package: 44-TSOP (0.400", 10.16mm Width) |
Stock4,112 |
|
DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 44TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
|
Package: 44-TSOP (0.400", 10.16mm Width) |
Stock2,448 |
|
DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 44TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
|
Package: 44-TSOP (0.400", 10.16mm Width) |
Stock4,096 |
|
DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 44TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
|
Package: 44-TSOP (0.400", 10.16mm Width) |
Stock2,240 |
|
DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock7,504 |
|
DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock5,440 |
|
DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock3,664 |
|
DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - FP
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock5,328 |
|
DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 60NS 44TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 30ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
|
Package: 44-TSOP (0.400", 10.16mm Width) |
Stock3,168 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 30ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 60NS 44TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 30ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
|
Package: 44-TSOP (0.400", 10.16mm Width) |
Stock7,488 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 30ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 60NS 44TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 30ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
|
Package: 44-TSOP (0.400", 10.16mm Width) |
Stock2,224 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 30ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 60NS 44TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 30ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
|
Package: 44-TSOP (0.400", 10.16mm Width) |
Stock7,648 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 30ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 60NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 30ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock6,736 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 30ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 60NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 30ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock3,696 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 30ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 60NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 30ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock2,144 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 30ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 60NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 30ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock5,248 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 30ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 44TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
|
Package: 44-TSOP (0.400", 10.16mm Width) |
Stock7,904 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 44TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
|
Package: 44-TSOP (0.400", 10.16mm Width) |
Stock61,080 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 44TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
|
Package: 44-TSOP (0.400", 10.16mm Width) |
Stock3,056 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 44TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
|
Package: 44-TSOP (0.400", 10.16mm Width) |
Stock6,944 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock2,064 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock36,240 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock3,360 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm)
- Supplier Device Package: 42-SOJ
|
Package: 42-BSOJ (0.400", 10.16mm) |
Stock33,780 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm) | 42-SOJ |
|
|
ISSI, Integrated Silicon Solution Inc |
IC EEPROM 4KBIT 3MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (512 x 8, 256 x 16)
- Memory Interface: SPI
- Clock Frequency: 3MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,016 |
|
EEPROM | EEPROM | 4Kb (512 x 8, 256 x 16) | SPI | 3MHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 143MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (32M x 8)
- Memory Interface: Parallel
- Clock Frequency: 143MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
|
Package: 54-TSOP (0.400", 10.16mm Width) |
Stock3,408 |
|
DRAM | SDRAM | 256Mb (32M x 8) | Parallel | 143MHz | - | 5.4ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |