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ISSI, Integrated Silicon Solution Inc |
Automotive (Tc: -40 to +105C), 8
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 8Gbit
- Memory Interface: LVSTL
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-TFBGA
- Supplier Device Package: 200-TFBGA (10x14.5)
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DRAM | SDRAM - Mobile LPDDR4X | 8Gbit | LVSTL | 1.6 GHz | 18ns | 3.5 ns | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 105°C (TC) | Surface Mount | 200-TFBGA | 200-TFBGA (10x14.5) |
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ISSI, Integrated Silicon Solution Inc |
1G, 1.8V, Mobile DDR, 64Mx16, 20
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 1Gbit
- Memory Interface: Parallel
- Clock Frequency: 208 MHz
- Write Cycle Time - Word, Page: 14.4ns
- Access Time: 5 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (8x10)
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DRAM | SDRAM - Mobile LPDDR | 1Gbit | Parallel | 208 MHz | 14.4ns | 5 ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x10) |
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ISSI, Integrated Silicon Solution Inc |
8G, 1.5V, DDR3, 512Mx16, 1600MT/
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 8Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (10x14)
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DRAM | SDRAM - DDR3 | 8Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (10x14) |
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ISSI, Integrated Silicon Solution Inc |
2G, 1.5V, DDR3, 256Mx8, 1600MT/s
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 2Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (8x10.5)
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DRAM | SDRAM - DDR3 | 2Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
128Mb QPI/QSPI, 24-ball TFBGA 6x
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 128Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 40µs, 800µs
- Access Time: -
- Voltage - Supply: 2.3V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA (6x8)
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FLASH | FLASH - NOR (SLC) | 128Mbit | SPI - Quad I/O, QPI, DTR | 166 MHz | 40µs, 800µs | - | 2.3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
RLDRAM2 Memory, 288Mbit, x9, Sep
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: RLDRAM 2
- Memory Size: 288Mbit
- Memory Interface: HSTL
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 20 ns
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 144-TFBGA
- Supplier Device Package: 144-TWBGA (11x18.5)
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DRAM | RLDRAM 2 | 288Mbit | HSTL | 400 MHz | - | 20 ns | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 144-TFBGA | 144-TWBGA (11x18.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 8GBIT PARALLEL 96LWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 8Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-LFBGA
- Supplier Device Package: 96-LWBGA (9x13)
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DRAM | SDRAM - DDR3L | 8Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 96-LFBGA | 96-LWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
2Mb,High-Speed,Async with ECC,12
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 2Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10 ns
- Voltage - Supply: 2.4V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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SRAM | SRAM - Asynchronous | 2Mbit | Parallel | - | 10ns | 10 ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 16MBIT SPI/QUAD 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 16Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 800µs
- Access Time: -
- Voltage - Supply: 2.3V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (8x6)
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FLASH | FLASH - NOR | 16Mbit | SPI - Quad I/O, QPI, DTR | 133 MHz | 800µs | - | 2.3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (8x6) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 16MBIT SPI/QUAD 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 16Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 800µs
- Access Time: -
- Voltage - Supply: 2.3V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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FLASH | FLASH - NOR | 16Mbit | SPI - Quad I/O, QPI, DTR | 133 MHz | 800µs | - | 2.3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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ISSI, Integrated Silicon Solution Inc |
1Mb,High-Speed/Low Power,Async w
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10 ns
- Voltage - Supply: 2.4V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-TFBGA (6x8)
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SRAM | SRAM - Asynchronous | 1Mbit | Parallel | - | 10ns | 10 ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT HSUL 12 168VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 4Gbit
- Memory Interface: HSUL_12
- Clock Frequency: 533 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-VFBGA
- Supplier Device Package: 168-VFBGA (12x12)
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DRAM | SDRAM - Mobile LPDDR2-S4 | 4Gbit | HSUL_12 | 533 MHz | 15ns | 5.5 ns | 1.14V ~ 1.3V, 1.7V ~ 1.95V | -40°C ~ 105°C (TC) | Surface Mount | 168-VFBGA | 168-VFBGA (12x12) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT HSUL 12 168VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 4Gbit
- Memory Interface: HSUL_12
- Clock Frequency: 533 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-VFBGA
- Supplier Device Package: 168-VFBGA (12x12)
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DRAM | SDRAM - Mobile LPDDR2-S4 | 4Gbit | HSUL_12 | 533 MHz | 15ns | 5.5 ns | 1.14V ~ 1.3V, 1.7V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 168-VFBGA | 168-VFBGA (12x12) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1GBIT PAR 78TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 1Gbit
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (8x10.5)
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DRAM | SDRAM - DDR3L | 1Gbit | Parallel | 933 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128MBIT PAR 54TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mbit
- Memory Interface: LVTTL
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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DRAM | SDRAM | 128Mbit | LVTTL | 166 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
IC PSRAM 16MBIT SPI/QUAD 24TFBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 16Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 40ns
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA (6x8)
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Package: - |
Stock1,410 |
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PSRAM | PSRAM (Pseudo SRAM) | 16Mbit | SPI - Quad I/O | 200 MHz | 40ns | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 512GBIT EMMC 153VFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (MLC)
- Memory Size: 512Gbit
- Memory Interface: eMMC
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 153-VFBGA
- Supplier Device Package: 153-VFBGA (11.5x13)
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FLASH | FLASH - NAND (MLC) | 512Gbit | eMMC | 200 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 153-VFBGA | 153-VFBGA (11.5x13) |
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ISSI, Integrated Silicon Solution Inc |
2G, 0.57-0.65V/1.06-1.17/1.70-1.
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 2Gbit
- Memory Interface: LVSTL
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-VFBGA (10x14.5)
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DRAM | SDRAM - Mobile LPDDR4X | 2Gbit | LVSTL | 1.6 GHz | 18ns | 3.5 ns | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | 200-VFBGA (10x14.5) |
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ISSI, Integrated Silicon Solution Inc |
4Mb,High-Speed/Low Power,Async,2
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10 ns
- Voltage - Supply: 2.4V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-TFBGA (6x8)
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SRAM | SRAM - Asynchronous | 4Mbit | Parallel | - | 10ns | 10 ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2GBIT PAR 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 2Gbit
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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DRAM | SDRAM - DDR3L | 2Gbit | Parallel | 933 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 256MBIT SPI/QUAD 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 40µs, 800µs
- Access Time: -
- Voltage - Supply: 1.65V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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FLASH | FLASH - NOR | 256Mbit | SPI - Quad I/O, QPI, DTR | 133 MHz | 40µs, 800µs | - | 1.65V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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ISSI, Integrated Silicon Solution Inc |
Automotive (Tc: -40 to +95C), 4G
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 4Gbit
- Memory Interface: LVSTL
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-VFBGA
- Supplier Device Package: 200-VFBGA (10x14.5)
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DRAM | SDRAM - Mobile LPDDR4 | 4Gbit | LVSTL | 1.6 GHz | 18ns | 3.5 ns | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 95°C (TC) | Surface Mount | 200-VFBGA | 200-VFBGA (10x14.5) |
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ISSI, Integrated Silicon Solution Inc |
16G, 1.2V, DDR4, 2MX8, DUAL RANK
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 16Gbit
- Memory Interface: Parallel
- Clock Frequency: 1.2 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 18 ns
- Voltage - Supply: 1.14V ~ 1.26V
- Operating Temperature: 0°C ~ 90°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-LFBGA
- Supplier Device Package: 78-LWBGA (10x14)
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DRAM | SDRAM - DDR4 | 16Gbit | Parallel | 1.2 GHz | 15ns | 18 ns | 1.14V ~ 1.26V | 0°C ~ 90°C (TC) | Surface Mount | 78-LFBGA | 78-LWBGA (10x14) |
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ISSI, Integrated Silicon Solution Inc |
512M, 2.5V, DDR 32Mx16, 200MHz,
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mbit
- Memory Interface: SSTL_2
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700 ps
- Voltage - Supply: 2.3V ~ 2.7V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP II
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DRAM | SDRAM - DDR | 512Mbit | SSTL_2 | 200 MHz | 15ns | 700 ps | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
2 Gbit(x8, 1 bit ECC), TSOP-48,
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 2Gbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 20 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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FLASH | FLASH - NAND (SLC) | 2Gbit | Parallel | - | 25ns | 20 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 64MBIT PAR 54TSOP II
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mbit
- Memory Interface: LVTTL
- Clock Frequency: 143 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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DRAM | SDRAM | 64Mbit | LVTTL | 143 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
9Mb,Flowthrough,Sync,256K x 36,1
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Standard
- Memory Size: 9Mbit
- Memory Interface: Parallel
- Clock Frequency: 117 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5 ns
- Voltage - Supply: 3.135V ~ 3.465V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x20)
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SRAM | SRAM - Standard | 9Mbit | Parallel | 117 MHz | - | 7.5 ns | 3.135V ~ 3.465V | -40°C ~ 125°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
8Mb, Low Power/Power Saver,Async
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45 ns
- Voltage - Supply: 2.2V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-VFBGA
- Supplier Device Package: 48-VFBGA (6x8)
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SRAM | SRAM - Asynchronous | 8Mbit | Parallel | - | 45ns | 45 ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-VFBGA (6x8) |